@inproceedings{3949, author = {{Lindner, Jörg}}, location = {{Universität Hannover}}, title = {{{Nanoscale materials and interface design by self-organization}}}, year = {{2018}}, } @inbook{3950, abstract = {{In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers}}, author = {{Riedl, Thomas and Lindner, Jörg}}, booktitle = {{Nanoscaled Films and Layers}}, editor = {{Nanai, L.}}, isbn = {{9789535131434}}, publisher = {{InTech}}, title = {{{Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}}}, doi = {{10.5772/67572}}, year = {{2017}}, } @inproceedings{3951, author = {{Brassat, Katharina and Lindner, Jörg}}, location = {{Barcelona (Spain)}}, title = {{{Joining self-assembly techniques: A route to hierarchical nanopores}}}, year = {{2017}}, } @inproceedings{3952, author = {{Brassat, Katharina and Kool, Daniel and Bürger, Julius and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{Micro- and nanopatterned surfaces with tailored chemical and topographical contrast by self-assembly techniques}}}, year = {{2017}}, } @inproceedings{3953, author = {{Brassat, Katharina and Keller, A. and Grundmeier, G. and Bremser, W. and Strube, O. and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Tailored antidot patterns created by nanosphere lithography for bioapplications}}}, year = {{2017}}, } @inproceedings{3954, author = {{Kismann, Michael and Riedl, Thomas and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching}}}, year = {{2017}}, } @inproceedings{3955, author = {{Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{InAs heteroepitaxy on GaAs patterned by nanosphere lithography}}}, year = {{2017}}, } @inproceedings{3987, author = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}}, location = {{Warsaq (Poland)}}, title = {{{Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}}}, year = {{2017}}, } @inproceedings{3988, author = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs}}}, year = {{2017}}, } @inproceedings{3989, author = {{Riedl, Thomas and Lindner, Jörg}}, location = {{Strasburg (France)}}, title = {{{Strain and strain energy in axial-heteroepitaxial GaAs/InAs nanopillars analyzed by atomistic and continuum elastic calculations}}}, year = {{2017}}, } @inproceedings{3990, author = {{Riedl, Thomas and Lindner, Jörg}}, location = {{Strasburg (France)}}, title = {{{The influence of the sphere material on the opening size distribution of nanosphere lithography masks}}}, year = {{2017}}, } @inproceedings{3991, author = {{Riedl, Thomas and Kunnathully, Vinay and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Evolution of the opening size of nanosphere lithography masks during thermal annealing}}}, year = {{2017}}, } @article{3992, author = {{Rieger, Torsten and Riedl, Thomas and Neumann, Elmar and Grützmacher, Detlev and Lindner, Jörg and Pawlis, Alexander}}, issn = {{1944-8244}}, journal = {{ACS Applied Materials & Interfaces}}, number = {{9}}, pages = {{8371--8377}}, publisher = {{American Chemical Society (ACS)}}, title = {{{Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence}}}, doi = {{10.1021/acsami.6b15824}}, volume = {{9}}, year = {{2017}}, } @inproceedings{3999, author = {{Lindner, Jörg and Riedl, Thomas}}, location = {{Warsaw ( Poland)}}, title = {{{Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces}}}, year = {{2017}}, } @inproceedings{4000, author = {{Lindner, Jörg}}, location = {{Dresden (Germany)}}, title = {{{Ion Beam Modification of Self-Organized Nanostructures}}}, year = {{2017}}, } @inproceedings{4001, author = {{Brassat, Katharina and Keller, A. and Grundmeier, G. and Bremser, W. and Strube, O. and Lindner, Jörg}}, location = {{Straßbourg (France)}}, title = {{{Bioinspired material design by hierarchical self-assembly on prepatterned surfaces }}}, year = {{2017}}, } @inproceedings{4003, author = {{Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}}, location = {{Brasov (Romania)}}, title = {{{Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both}}}, year = {{2017}}, } @article{3997, abstract = {{Switchable two dimensional liquid crystal diffraction gratings are promising can- didates in beam steering devices, multiplexers and holographic displays. For these areas of applications a high degree of integration in optical systems is much sought-after. In the context of diffraction gratings this means that the angle of diffraction should be rather high, which typically poses a problem as the fabrication of small grating periods is challenging. In this paper, we propose the use of nanosphere lithography (NSL) for the fabrication of two-dimensionally structured electrodes with a periodicity of a few micrometers. NSL is based on the self-assembly of micro- or nanometer sized spheres into monolayers. It allows for easy substrate structuring on wafer scale. The manufactured electrode is combined with a liquid crystalline polymer-stabilized blue phase, which facilitates sub-millisecond electrical switching of the diffraction efficiency at adiffractionangle of 21.4°.}}, author = {{Wahle, M. and Brassat, Katharina and Ebel, J. and Bürger, Julius and Lindner, Jörg and Kitzerow, Heinz-Siegfried}}, journal = {{Optics Express 25}}, number = {{19}}, pages = {{22608--22619}}, title = {{{Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography}}}, doi = {{10.1364/OE.25.022607}}, volume = {{25}}, year = {{2017}}, } @inproceedings{4002, author = {{Kitzerow, Heinz-Siegfried and Lindner, Jörg}}, location = {{Barcelona (Spain)}}, title = {{{Plasmonic nanostructures: spectroscopy and electron microscopy}}}, year = {{2017}}, } @article{3956, abstract = {{In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications. Therefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity of the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional photolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics. The impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during photolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized. Additionally, the implementation of this sacrificial layer can be used for future complementary circuit design.}}, author = {{Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, pages = {{35--39}}, publisher = {{Elsevier BV}}, title = {{{Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}}}, doi = {{10.1016/j.mee.2016.12.018}}, volume = {{174}}, year = {{2016}}, }