[{"user_id":"55706","language":[{"iso":"eng"}],"_id":"4069","date_updated":"2022-01-06T07:00:12Z","title":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells","status":"public","year":"2014","author":[{"full_name":"Kemper, R.M.","first_name":"R.M.","last_name":"Kemper"},{"full_name":"Veit, P.","last_name":"Veit","first_name":"P."},{"full_name":"Mietze, C. ","last_name":"Mietze","first_name":"C. "},{"full_name":"Dempewolf, A.","first_name":"A.","last_name":"Dempewolf"},{"full_name":"Wecker, T. ","last_name":"Wecker","first_name":"T. "},{"first_name":"J.","last_name":"Christen","full_name":"Christen, J."},{"full_name":"As, D.","last_name":"As","first_name":"D."},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"start_date":"2014-05-26","name":"European Materials Research Society Spring Meeting 2014","location":"Lille (France)","end_date":"2014-05-30"},"type":"conference","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-22T12:26:49Z","citation":{"chicago":"Kemper, R.M., P. Veit, C.  Mietze, A. Dempewolf, T.  Wecker, J. Christen, D. As, and Jörg Lindner. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells,” 2014.","short":"R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, J. Christen, D. As, J. Lindner, in: 2014.","ieee":"R. M. Kemper <i>et al.</i>, “STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells,” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.","apa":"Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Christen, J., … Lindner, J. (2014). STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. Presented at the European Materials Research Society Spring Meeting 2014, Lille (France).","bibtex":"@inproceedings{Kemper_Veit_Mietze_Dempewolf_Wecker_Christen_As_Lindner_2014, title={STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}, author={Kemper, R.M. and Veit, P. and Mietze, C.  and Dempewolf, A. and Wecker, T.  and Christen, J. and As, D. and Lindner, Jörg}, year={2014} }","ama":"Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. In: ; 2014.","mla":"Kemper, R. M., et al. <i>STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells</i>. 2014."}},{"abstract":[{"lang":"eng","text":"We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. "}],"publication":"physica status solidi (c)","issue":"2","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"relation":"main_file","date_updated":"2018-08-22T12:30:12Z","file_name":"Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf","access_level":"closed","file_size":3777577,"file_id":"4071","content_type":"application/pdf","success":1,"creator":"hclaudia","date_created":"2018-08-22T12:30:12Z"}],"date_created":"2018-08-22T12:28:15Z","date_updated":"2022-01-06T07:00:13Z","publication_status":"published","intvolume":"        11","article_type":"original","title":"Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)","year":"2014","publication_identifier":{"issn":["1862-6351"]},"author":[{"full_name":"Kemper, R. M.","last_name":"Kemper","first_name":"R. M."},{"full_name":"Mietze, C.","last_name":"Mietze","first_name":"C."},{"first_name":"L.","last_name":"Hiller","full_name":"Hiller, L."},{"first_name":"T.","last_name":"Stauden","full_name":"Stauden, T."},{"full_name":"Pezoldt, J.","last_name":"Pezoldt","first_name":"J."},{"last_name":"Meertens","first_name":"D.","full_name":"Meertens, D."},{"last_name":"Luysberg","first_name":"M.","full_name":"Luysberg, M."},{"last_name":"As","first_name":"D. J.","full_name":"As, D. J."},{"full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner","id":"20797"}],"doi":"10.1002/pssc.201300292","language":[{"iso":"eng"}],"file_date_updated":"2018-08-22T12:30:12Z","citation":{"short":"R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.","chicago":"Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i> 11, no. 2 (2014): 265–68. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>.","ieee":"R. M. Kemper <i>et al.</i>, “Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001),” <i>physica status solidi (c)</i>, vol. 11, no. 2, pp. 265–268, 2014.","apa":"Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>Physica Status Solidi (C)</i>, <i>11</i>(2), 265–268. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>","bibtex":"@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014, title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}, volume={11}, DOI={<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268} }","ama":"Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268. doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>","mla":"Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i>, vol. 11, no. 2, Wiley, 2014, pp. 265–68, doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>."},"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"55706","volume":11,"page":"265-268","publisher":"Wiley","_id":"4070"},{"citation":{"bibtex":"@article{Riedl_Lindner_2014, title={Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces}, volume={211}, DOI={<a href=\"https://doi.org/10.1002/pssa.201431474\">10.1002/pssa.201431474</a>}, number={12}, journal={physica status solidi (a)}, publisher={Wiley}, author={Riedl, Thomas and Lindner, Jörg}, year={2014}, pages={2871–2877} }","ama":"Riedl T, Lindner J. Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces. <i>physica status solidi (a)</i>. 2014;211(12):2871-2877. doi:<a href=\"https://doi.org/10.1002/pssa.201431474\">10.1002/pssa.201431474</a>","mla":"Riedl, Thomas, and Jörg Lindner. “Self-Organized Fabrication of Periodic Arrays of Vertical, Ultra-Thin Nanopillars on GaAs Surfaces.” <i>Physica Status Solidi (A)</i>, vol. 211, no. 12, Wiley, 2014, pp. 2871–77, doi:<a href=\"https://doi.org/10.1002/pssa.201431474\">10.1002/pssa.201431474</a>.","chicago":"Riedl, Thomas, and Jörg Lindner. “Self-Organized Fabrication of Periodic Arrays of Vertical, Ultra-Thin Nanopillars on GaAs Surfaces.” <i>Physica Status Solidi (A)</i> 211, no. 12 (2014): 2871–77. <a href=\"https://doi.org/10.1002/pssa.201431474\">https://doi.org/10.1002/pssa.201431474</a>.","short":"T. Riedl, J. Lindner, Physica Status Solidi (A) 211 (2014) 2871–2877.","ieee":"T. Riedl and J. Lindner, “Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces,” <i>physica status solidi (a)</i>, vol. 211, no. 12, pp. 2871–2877, 2014.","apa":"Riedl, T., &#38; Lindner, J. (2014). Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces. <i>Physica Status Solidi (A)</i>, <i>211</i>(12), 2871–2877. <a href=\"https://doi.org/10.1002/pssa.201431474\">https://doi.org/10.1002/pssa.201431474</a>"},"file_date_updated":"2018-08-22T12:32:42Z","volume":211,"user_id":"55706","ddc":["530"],"_id":"4072","publisher":"Wiley","page":"2871-2877","has_accepted_license":"1","status":"public","department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","date_created":"2018-08-22T12:31:17Z","file":[{"creator":"hclaudia","date_created":"2018-08-22T12:32:42Z","file_name":"Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces.pdf","file_size":989885,"access_level":"closed","relation":"main_file","date_updated":"2018-08-22T12:32:42Z","file_id":"4073","success":1,"content_type":"application/pdf"}],"abstract":[{"text":"This paper presents a low‐cost procedure that allows for self‐organized fabrication of periodically arranged, sub‐50 nm diameter, vertical‐sidewall GaAs nanopillars on GaAs surfaces based on nanosphere lithography, and reactive ion etching (RIE). Monodispersed polystyrene (PS) sphere double layers are deposited from a colloidal suspension on pre‐treated, hydrophilized GaAs substrates. Ni is thermally evaporated to act as a hard mask for subsequent RIE. Scanning electron microscopy reveals that the Ni nanoparticles left on the substrate after PS sphere removal have polygon‐shaped in‐plane cross‐sections corresponding to the shape of the double layer mask openings. RIE using SiCl4 at low pressure and high power density leads to the formation of vertical nanopillars with circular to oval cross‐sections, whose diameters are reduced by ∼1/3 compared to those of the Ni nanoparticles. These findings can be explained by plasma‐enhanced surface diffusion and sputtering processes during RIE. The obtained GaAs nanopillars have an average diameter of only ∼23 nm, exhibit an excellent verticality with a sidewall angle of 88.9 ± 0.4° and planar top faces, as visible in transmission electron microscopy images. ","lang":"eng"}],"issue":"12","publication":"physica status solidi (a)","doi":"10.1002/pssa.201431474","language":[{"iso":"eng"}],"article_type":"original","intvolume":"       211","publication_status":"published","date_updated":"2022-01-06T07:00:13Z","publication_identifier":{"issn":["1862-6300"]},"author":[{"first_name":"Thomas","last_name":"Riedl","full_name":"Riedl, Thomas","id":"36950"},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"}],"title":"Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces","year":"2014"},{"publisher":"Cambridge University Press (CUP)","_id":"4074","user_id":"55706","volume":1663,"status":"public","conference":{"start_date":"2013-12-01","name":"MRS Fall Meeting ","location":"Boston (USA)","end_date":"2013-12-06"},"citation":{"apa":"Riedl, T., Strake, M., Sievers, W., &#38; Lindner, J. (2014). Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers. <i>MRS Proceedings</i>, <i>1663</i>. <a href=\"https://doi.org/10.1557/opl.2014.312\">https://doi.org/10.1557/opl.2014.312</a>","mla":"Riedl, Thomas, et al. “Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers.” <i>MRS Proceedings</i>, vol. 1663, mrsf13-1663-ww03-75, Cambridge University Press (CUP), 2014, doi:<a href=\"https://doi.org/10.1557/opl.2014.312\">10.1557/opl.2014.312</a>.","ieee":"T. Riedl, M. Strake, W. Sievers, and J. Lindner, “Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers,” <i>MRS Proceedings</i>, vol. 1663, 2014.","chicago":"Riedl, Thomas, Matthias Strake, Werner Sievers, and Jörg Lindner. “Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers.” <i>MRS Proceedings</i> 1663 (2014). <a href=\"https://doi.org/10.1557/opl.2014.312\">https://doi.org/10.1557/opl.2014.312</a>.","short":"T. Riedl, M. Strake, W. Sievers, J. Lindner, MRS Proceedings 1663 (2014).","ama":"Riedl T, Strake M, Sievers W, Lindner J. Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers. <i>MRS Proceedings</i>. 2014;1663. doi:<a href=\"https://doi.org/10.1557/opl.2014.312\">10.1557/opl.2014.312</a>","bibtex":"@article{Riedl_Strake_Sievers_Lindner_2014, title={Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers}, volume={1663}, DOI={<a href=\"https://doi.org/10.1557/opl.2014.312\">10.1557/opl.2014.312</a>}, number={mrsf13-1663-ww03-75}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Riedl, Thomas and Strake, Matthias and Sievers, Werner and Lindner, Jörg}, year={2014} }"},"article_number":"mrsf13-1663-ww03-75","language":[{"iso":"eng"}],"doi":"10.1557/opl.2014.312","title":"Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers","year":"2014","publication_identifier":{"issn":["1946-4274"]},"author":[{"last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas","id":"36950"},{"first_name":"Matthias","last_name":"Strake","full_name":"Strake, Matthias"},{"last_name":"Sievers","first_name":"Werner","full_name":"Sievers, Werner"},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"date_updated":"2022-01-06T07:00:13Z","publication_status":"published","intvolume":"      1663","article_type":"original","date_created":"2018-08-22T12:34:02Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"publication":"MRS Proceedings","abstract":[{"text":"An experimental analysis of the morphology changes of hexagonally close packed polystyrene sphere monolayers induced by annealing in air is presented. The triangular interstices between each triple of spheres, which are frequently used as nanoscale mask openings in colloidal lithography, are observed to gradually shrink in size and change in shape upon annealing. Top view scanning electron microscopy images reveal that different stages are involved in the closure of monolayer interstices at annealing temperatures in the range between 110°C and 120°C. In the early stages shrinkage of the triangular interstices is dominated by material transport to and thus shortening of their corners, in the late stages interstice area reduction via displacement of the triangle edges becomes significant. At intermediate annealing times the rate of interstice area reduction displays a maximum before a stabilized state characterized by a rounded isosceles triangular shape forms.","lang":"eng"}]},{"date_created":"2018-08-22T12:43:39Z","type":"conference","department":[{"_id":"15"},{"_id":"286"}],"issue":"1664","publication":"Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties ","citation":{"ieee":"T. Riedl and J. Lindner, “Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures,” in <i>Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties </i>, Boston (USA), 2014, no. 1664.","apa":"Riedl, T., &#38; Lindner, J. (2014). Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures. In <i>Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties </i>. Boston (USA): MRS Online Proceedings. <a href=\"https://doi.org/10.1557/opl.2014.325 \">https://doi.org/10.1557/opl.2014.325 </a>","short":"T. Riedl, J. Lindner, in: Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties , MRS Online Proceedings, 2014.","chicago":"Riedl, Thomas, and Jörg Lindner. “Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures.” In <i>Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties </i>. MRS Online Proceedings, 2014. <a href=\"https://doi.org/10.1557/opl.2014.325 \">https://doi.org/10.1557/opl.2014.325 </a>.","mla":"Riedl, Thomas, and Jörg Lindner. “Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures.” <i>Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties </i>, no. 1664, MRS Online Proceedings, 2014, doi:<a href=\"https://doi.org/10.1557/opl.2014.325 \">10.1557/opl.2014.325 </a>.","bibtex":"@inproceedings{Riedl_Lindner_2014, title={Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures}, DOI={<a href=\"https://doi.org/10.1557/opl.2014.325 \">10.1557/opl.2014.325 </a>}, number={1664}, booktitle={Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties }, publisher={MRS Online Proceedings}, author={Riedl, Thomas and Lindner, Jörg}, year={2014} }","ama":"Riedl T, Lindner J. Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures. In: <i>Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties </i>. MRS Online Proceedings; 2014. doi:<a href=\"https://doi.org/10.1557/opl.2014.325 \">10.1557/opl.2014.325 </a>"},"abstract":[{"text":"The formation of misfit dislocations is an important issue for the performance of heteroepitaxial micro- and optoelectronic devices. We analyze three approaches that quantify the stability of misfit dislocations in axial-heteroepitaxial nanowires with respect to applicability and predictions of critical nanowire dimensions. The “nanoheteroepitaxy” approach of Zubia and Hersee proves suitable for determination of strain partitioning in the presence of an elastic mismatch. Concerning the critical thickness and diameter however the descriptions of Ertekin et al. and Glas respectively yield more reliable results, owing to the consideration of the total coherent and dislocation related energies plus the residual strain energy. In contrast to the model of Ertekin et al., which refers to infinitely long nanowires, the other two mentioned approaches allow predictions of the critical thickness of mismatched deposits on the nanowire axial face.","lang":"eng"}],"_id":"4075","language":[{"iso":"eng"}],"publisher":"MRS Online Proceedings","user_id":"55706","doi":"10.1557/opl.2014.325 ","year":"2014","status":"public","title":"Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures","author":[{"id":"36950","last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas"},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"}],"conference":{"location":"Boston (USA)","name":"MRS Materials Research Society Fall Meeting 2014","start_date":"2013-12-01","end_date":"2013-12-06"},"publication_status":"published","date_updated":"2022-01-06T07:00:13Z"},{"file":[{"success":1,"content_type":"application/pdf","file_id":"4077","file_size":1377255,"access_level":"closed","file_name":"Reliability of high-resolution electron backscatter diffraction determination of strain an totation variations using phase-only and cross correlation.pdf","date_updated":"2018-08-22T12:45:58Z","relation":"main_file","date_created":"2018-08-22T12:45:58Z","creator":"hclaudia"}],"date_created":"2018-08-22T12:45:23Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"publication":"Crystal Research and Technology","issue":"4","abstract":[{"text":"This contribution analyzes the reliability of strain and rotation variation determination using cross‐ as well as phase‐only correlation of experimental wide‐angle electron backscatter diffraction (EBSD) patterns. For both rotation and three‐point bending the resulting displacement gradient tensor components are examined in terms of magnitude and statistical scatter as a function of various correlation procedure parameters and signal‐to‐noise ratio. It is shown that on the one hand the Fourier filter width has a major impact on the strain results. At higher noise level a smaller filter width has to be applied for obtaining maximum precision. On the other hand, the influence of the degree of overlap of the regions of interest positioned in the patterns is less important. For both rotation and bending experiments the cross‐correlation variant yields a smaller standard deviation with respect to phase‐only correlation, in particular for elevated noise level. The difference is attributed to the stronger propagation of noise effects in the course of phase‐only correlation function calculation and fitting. In the rotation experiment a standard deviation of ∼1.0 × 10^−4, averaged over the displacement gradient tensor components, and a rotational precision of ∼1.5 × 10^−4 rad have been achieved by using optimized evaluation settings. ","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1002/crat.201300217","title":"Reliability of high-resolution electron backscatter diffraction determination of strain and rotation variations using phase-only and cross correlation","year":"2014","publication_identifier":{"issn":["0232-1300"]},"author":[{"id":"36950","full_name":"Riedl, Thomas","last_name":"Riedl","first_name":"Thomas"},{"full_name":"Wendrock, H.","first_name":"H.","last_name":"Wendrock"}],"date_updated":"2022-01-06T07:00:13Z","publication_status":"published","intvolume":"        49","article_type":"original","file_date_updated":"2018-08-22T12:45:58Z","citation":{"bibtex":"@article{Riedl_Wendrock_2014, title={Reliability of high-resolution electron backscatter diffraction determination of strain and rotation variations using phase-only and cross correlation}, volume={49}, DOI={<a href=\"https://doi.org/10.1002/crat.201300217\">10.1002/crat.201300217</a>}, number={4}, journal={Crystal Research and Technology}, publisher={Wiley}, author={Riedl, Thomas and Wendrock, H.}, year={2014}, pages={195–203} }","ama":"Riedl T, Wendrock H. Reliability of high-resolution electron backscatter diffraction determination of strain and rotation variations using phase-only and cross correlation. <i>Crystal Research and Technology</i>. 2014;49(4):195-203. doi:<a href=\"https://doi.org/10.1002/crat.201300217\">10.1002/crat.201300217</a>","mla":"Riedl, Thomas, and H. Wendrock. “Reliability of High-Resolution Electron Backscatter Diffraction Determination of Strain and Rotation Variations Using Phase-Only and Cross Correlation.” <i>Crystal Research and Technology</i>, vol. 49, no. 4, Wiley, 2014, pp. 195–203, doi:<a href=\"https://doi.org/10.1002/crat.201300217\">10.1002/crat.201300217</a>.","short":"T. Riedl, H. Wendrock, Crystal Research and Technology 49 (2014) 195–203.","chicago":"Riedl, Thomas, and H. Wendrock. “Reliability of High-Resolution Electron Backscatter Diffraction Determination of Strain and Rotation Variations Using Phase-Only and Cross Correlation.” <i>Crystal Research and Technology</i> 49, no. 4 (2014): 195–203. <a href=\"https://doi.org/10.1002/crat.201300217\">https://doi.org/10.1002/crat.201300217</a>.","ieee":"T. Riedl and H. Wendrock, “Reliability of high-resolution electron backscatter diffraction determination of strain and rotation variations using phase-only and cross correlation,” <i>Crystal Research and Technology</i>, vol. 49, no. 4, pp. 195–203, 2014.","apa":"Riedl, T., &#38; Wendrock, H. (2014). Reliability of high-resolution electron backscatter diffraction determination of strain and rotation variations using phase-only and cross correlation. <i>Crystal Research and Technology</i>, <i>49</i>(4), 195–203. <a href=\"https://doi.org/10.1002/crat.201300217\">https://doi.org/10.1002/crat.201300217</a>"},"page":"195-203","publisher":"Wiley","_id":"4076","ddc":["530"],"user_id":"55706","volume":49,"status":"public","has_accepted_license":"1"},{"_id":"4078","language":[{"iso":"eng"}],"user_id":"55706","author":[{"first_name":"Thomas","last_name":"Riedl","full_name":"Riedl, Thomas","id":"36950"},{"full_name":"Kovács, A.","first_name":"A.","last_name":"Kovács"},{"first_name":"D.","last_name":"Meertens","full_name":"Meertens, D."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}],"conference":{"name":"European Materials Research Society Fall Meeting 2014","start_date":"2014-09-15","location":"Warsaw (Poland)","end_date":"2014-09-19"},"status":"public","year":"2014","title":"Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars","date_updated":"2022-01-06T07:00:13Z","date_created":"2018-08-22T12:48:37Z","department":[{"_id":"286"}],"type":"conference","citation":{"bibtex":"@inproceedings{Riedl_Kovács_Meertens_Lindner_2014, title={Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars}, author={Riedl, Thomas and Kovács, A. and Meertens, D. and Lindner, Jörg}, year={2014} }","chicago":"Riedl, Thomas, A. Kovács, D. Meertens, and Jörg Lindner. “Structure and Surface Chemistry Analysis of Ultra-Thin Reactive Ion Etched GaAs (111) Nanopillars,” 2014.","ama":"Riedl T, Kovács A, Meertens D, Lindner J. Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars. In: ; 2014.","short":"T. Riedl, A. Kovács, D. Meertens, J. Lindner, in: 2014.","ieee":"T. Riedl, A. Kovács, D. Meertens, and J. Lindner, “Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars,” presented at the European Materials Research Society Fall Meeting 2014, Warsaw (Poland), 2014.","apa":"Riedl, T., Kovács, A., Meertens, D., &#38; Lindner, J. (2014). Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars. Presented at the European Materials Research Society Fall Meeting 2014, Warsaw (Poland).","mla":"Riedl, Thomas, et al. <i>Structure and Surface Chemistry Analysis of Ultra-Thin Reactive Ion Etched GaAs (111) Nanopillars</i>. 2014."}},{"author":[{"full_name":"Rüsing, M.","last_name":"Rüsing","first_name":"M."},{"full_name":"Merten, L.","first_name":"L.","last_name":"Merten"},{"first_name":"P.","last_name":"Reinert","full_name":"Reinert, P."},{"first_name":"D.","last_name":"Rogalla","full_name":"Rogalla, D."},{"full_name":"Becker, H.-W.","first_name":"H.-W.","last_name":"Becker"},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"}],"conference":{"end_date":"2014-07-22","name":"Workshop Ionenstrahlen und Nanostrukturen","start_date":"2014-07-20","location":"Paderborn"},"year":"2014","title":"RBS of gold-coated polystyrene nanospheres","status":"public","date_updated":"2022-01-06T07:00:13Z","language":[{"iso":"eng"}],"_id":"4079","user_id":"55706","citation":{"ieee":"M. Rüsing, L. Merten, P. Reinert, D. Rogalla, H.-W. Becker, and J. Lindner, “RBS of gold-coated polystyrene nanospheres,” presented at the Workshop Ionenstrahlen und Nanostrukturen, Paderborn, 2014.","apa":"Rüsing, M., Merten, L., Reinert, P., Rogalla, D., Becker, H.-W., &#38; Lindner, J. (2014). RBS of gold-coated polystyrene nanospheres. Presented at the Workshop Ionenstrahlen und Nanostrukturen, Paderborn.","short":"M. Rüsing, L. Merten, P. Reinert, D. Rogalla, H.-W. Becker, J. Lindner, in: 2014.","chicago":"Rüsing, M., L. Merten, P. Reinert, D. Rogalla, H.-W. Becker, and Jörg Lindner. “RBS of Gold-Coated Polystyrene Nanospheres,” 2014.","mla":"Rüsing, M., et al. <i>RBS of Gold-Coated Polystyrene Nanospheres</i>. 2014.","bibtex":"@inproceedings{Rüsing_Merten_Reinert_Rogalla_Becker_Lindner_2014, title={RBS of gold-coated polystyrene nanospheres}, author={Rüsing, M. and Merten, L. and Reinert, P. and Rogalla, D. and Becker, H.-W. and Lindner, Jörg}, year={2014} }","ama":"Rüsing M, Merten L, Reinert P, Rogalla D, Becker H-W, Lindner J. RBS of gold-coated polystyrene nanospheres. In: ; 2014."},"date_created":"2018-08-22T12:50:31Z","department":[{"_id":"15"},{"_id":"286"}],"type":"conference"},{"citation":{"short":"J. Lindner, in: 2014.","ama":"Lindner J. TEM investigations on the nanoheteroepitaxy of semiconductors . In: ; 2014.","chicago":"Lindner, Jörg. “TEM Investigations on the Nanoheteroepitaxy of Semiconductors ,” 2014.","bibtex":"@inproceedings{Lindner_2014, title={TEM investigations on the nanoheteroepitaxy of semiconductors }, author={Lindner, Jörg}, year={2014} }","mla":"Lindner, Jörg. <i>TEM Investigations on the Nanoheteroepitaxy of Semiconductors </i>. 2014.","apa":"Lindner, J. (2014). TEM investigations on the nanoheteroepitaxy of semiconductors . Presented at the 16th Scientific Seminar of the Dresden Fraunhofer Cluster Nanoanalysis in collaboration with the Dresden Center for Nanoanalysis, Dresden (Germany).","ieee":"J. Lindner, “TEM investigations on the nanoheteroepitaxy of semiconductors ,” presented at the 16th Scientific Seminar of the Dresden Fraunhofer Cluster Nanoanalysis in collaboration with the Dresden Center for Nanoanalysis, Dresden (Germany), 2014."},"department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-22T12:51:57Z","date_updated":"2022-01-06T07:00:14Z","conference":{"start_date":"2014-12-04","name":"16th Scientific Seminar of the Dresden Fraunhofer Cluster Nanoanalysis in collaboration with the Dresden Center for Nanoanalysis","location":"Dresden (Germany)","end_date":"2014-12-04"},"author":[{"full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"year":"2014","title":"TEM investigations on the nanoheteroepitaxy of semiconductors ","status":"public","user_id":"55706","_id":"4080","language":[{"iso":"eng"}]},{"citation":{"mla":"Lindner, Jörg. <i>Microscopic Studies of Plasmonic Nanostructures II</i>. 2014.","ama":"Lindner J. Microscopic studies of plasmonic nanostructures II. In: ; 2014.","bibtex":"@inproceedings{Lindner_2014, title={Microscopic studies of plasmonic nanostructures II}, author={Lindner, Jörg}, year={2014} }","apa":"Lindner, J. (2014). Microscopic studies of plasmonic nanostructures II. Presented at the Europhotonics Spring School 2014, Porquerolles (France).","ieee":"J. Lindner, “Microscopic studies of plasmonic nanostructures II,” presented at the Europhotonics Spring School 2014, Porquerolles (France), 2014.","short":"J. Lindner, in: 2014.","chicago":"Lindner, Jörg. “Microscopic Studies of Plasmonic Nanostructures II,” 2014."},"date_created":"2018-08-22T12:53:13Z","type":"conference","department":[{"_id":"15"},{"_id":"286"}],"year":"2014","status":"public","title":"Microscopic studies of plasmonic nanostructures II","author":[{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"}],"conference":{"end_date":"2014-04-03","location":"Porquerolles (France)","start_date":"2014-03-31","name":"Europhotonics Spring School 2014"},"date_updated":"2022-01-06T07:00:14Z","language":[{"iso":"eng"}],"_id":"4082","user_id":"55706"},{"user_id":"55706","language":[{"iso":"eng"}],"_id":"4083","date_updated":"2022-01-06T07:00:14Z","author":[{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"conference":{"location":"Jena (Germany)","start_date":"2014-04-25","name":"Kolloquium der Friedrich-Schiller-Universität","end_date":"2014-04-25"},"year":"2014","title":"Nanostrukturierte Oberflächen, nicht nur zum Spass","status":"public","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-22T12:54:24Z","citation":{"short":"J. Lindner, in: 2014.","chicago":"Lindner, Jörg. “Nanostrukturierte Oberflächen, Nicht Nur Zum Spass,” 2014.","apa":"Lindner, J. (2014). Nanostrukturierte Oberflächen, nicht nur zum Spass. Presented at the Kolloquium der Friedrich-Schiller-Universität, Jena (Germany).","ieee":"J. Lindner, “Nanostrukturierte Oberflächen, nicht nur zum Spass,” presented at the Kolloquium der Friedrich-Schiller-Universität, Jena (Germany), 2014.","ama":"Lindner J. Nanostrukturierte Oberflächen, nicht nur zum Spass. In: ; 2014.","bibtex":"@inproceedings{Lindner_2014, title={Nanostrukturierte Oberflächen, nicht nur zum Spass}, author={Lindner, Jörg}, year={2014} }","mla":"Lindner, Jörg. <i>Nanostrukturierte Oberflächen, Nicht Nur Zum Spass</i>. 2014."}},{"page":"730-733","publisher":"Trans Tech Publications","_id":"4064","ddc":["530"],"user_id":"14931","volume":"778-780","status":"public","has_accepted_license":"1","file_date_updated":"2018-08-22T12:20:24Z","citation":{"apa":"Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &#38; Pezoldt, J. (2014). Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>, <i>778–780</i>, 730–733. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>","mla":"Hiller, Lars, et al. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i>, vol. 778–780, Trans Tech Publications, 2014, pp. 730–33, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","ieee":"L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” <i>Materials Science Forum</i>, vol. 778–780, pp. 730–733, 2014, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","chicago":"Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i> 778–780 (2014): 730–33. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>.","short":"L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 778–780 (2014) 730–733.","ama":"Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>. 2014;778-780:730-733. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>","bibtex":"@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2014, title={Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}, volume={778–780}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2014}, pages={730–733} }"},"language":[{"iso":"eng"}],"doi":"10.4028/www.scientific.net/msf.778-780.730","title":"Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures","year":"2014","publication_identifier":{"issn":["1662-9752"]},"author":[{"full_name":"Hiller, Lars","last_name":"Hiller","first_name":"Lars"},{"full_name":"Stauden, Thomas","first_name":"Thomas","last_name":"Stauden"},{"full_name":"Kemper, Ricarda M.","last_name":"Kemper","first_name":"Ricarda M."},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"As","first_name":"Donat J.","orcid":"0000-0003-1121-3565","full_name":"As, Donat J.","id":"14"},{"full_name":"Pezoldt, Jörg","first_name":"Jörg","last_name":"Pezoldt"}],"date_updated":"2023-10-09T09:08:12Z","publication_status":"published","article_type":"original","file":[{"date_created":"2018-08-22T12:20:24Z","creator":"hclaudia","file_id":"4065","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-22T12:20:24Z","file_name":"2014_Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.pdf","access_level":"closed","file_size":882721}],"date_created":"2018-08-22T12:17:30Z","type":"journal_article","department":[{"_id":"286"}],"publication":"Materials Science Forum","abstract":[{"text":"An anisotropic etching process for mesa structures using fluorinated plasma with\r\nhydrogen addition was developed in an electron cyclotron resonance setup. The evolution of the\r\nmesa morphology was studied in dependence on the gas composition, the applied bias and the\r\npressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios\r\nof the fabricated structure in the developed residue free ECR plasma etching process were between\r\n5 and 20.","lang":"eng"}]},{"type":"book_chapter","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-23T12:34:23Z","publication":"Silicon-based Nanomaterials","citation":{"chicago":"Kemper, R.M., Donald As, and Jörg Lindner. “Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” In <i>Silicon-Based Nanomaterials</i>, edited by H. Li, J. Wu, and Z.M. Wang, 187:381–405. Springer Series in Materials Science, 2013.","short":"R.M. Kemper, D. As, J. Lindner, in: H. Li, J. Wu, Z.M. Wang (Eds.), Silicon-Based Nanomaterials, Springer Series in Materials Science, 2013, pp. 381–405.","apa":"Kemper, R. M., As, D., &#38; Lindner, J. (2013). Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. In H. Li, J. Wu, &#38; Z. M. Wang (Eds.), <i>Silicon-based Nanomaterials</i> (Vol. 187, pp. 381–405). Springer Series in Materials Science.","ieee":"R. M. Kemper, D. As, and J. Lindner, “Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” in <i>Silicon-based Nanomaterials</i>, vol. 187, H. Li, J. Wu, and Z. M. Wang, Eds. Springer Series in Materials Science, 2013, pp. 381–405.","ama":"Kemper RM, As D, Lindner J. Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. In: Li H, Wu J, Wang ZM, eds. <i>Silicon-Based Nanomaterials</i>. Vol 187. Springer Series in Materials Science; 2013:381-405.","bibtex":"@inbook{Kemper_As_Lindner_2013, title={Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={187}, booktitle={Silicon-based Nanomaterials}, publisher={Springer Series in Materials Science}, author={Kemper, R.M. and As, Donald and Lindner, Jörg}, editor={Li, H. and Wu, J. and Wang, Z.M.Editors}, year={2013}, pages={381–405} }","mla":"Kemper, R. M., et al. “Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Silicon-Based Nanomaterials</i>, edited by H. Li et al., vol. 187, Springer Series in Materials Science, 2013, pp. 381–405."},"user_id":"55706","volume":187,"editor":[{"last_name":"Li","first_name":"H.","full_name":"Li, H."},{"full_name":"Wu, J.","first_name":"J.","last_name":"Wu"},{"last_name":"Wang","first_name":"Z.M.","full_name":"Wang, Z.M."}],"page":"381-405","_id":"4094","publisher":"Springer Series in Materials Science","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:00:15Z","intvolume":"       187","year":"2013","title":"Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates","status":"public","author":[{"full_name":"Kemper, R.M.","first_name":"R.M.","last_name":"Kemper"},{"full_name":"As, Donald","first_name":"Donald","last_name":"As"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"publication_identifier":{"isbn":["978-1-4614-8168-3"],"eisbn":["978-1-4614-8169-0 "]}},{"language":[{"iso":"eng"}],"_id":"4097","user_id":"55706","author":[{"id":"11305","first_name":"Katharina","last_name":"Brassat","full_name":"Brassat, Katharina"},{"first_name":"Johannes","last_name":"Pauly","full_name":"Pauly, Johannes"},{"last_name":"Kemper","first_name":"R.","full_name":"Kemper, R."},{"full_name":"Strake, M.","first_name":"M.","last_name":"Strake"},{"id":"30380","full_name":"Brodehl, Christoph","last_name":"Brodehl","first_name":"Christoph"},{"full_name":"Sievers, Werner","first_name":"Werner","last_name":"Sievers"},{"first_name":"Thomas","last_name":"Riedl","full_name":"Riedl, Thomas","id":"36950"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"name":"46th Biennial Meeting of the German Colloid Society \"Morphological Transformations and Responses in Colloidal Systems\"","start_date":"2013-09-23","location":"Paderborn","end_date":"2013-09-25"},"status":"public","title":"Colloidal nano-lithography: state-of-the-art","year":"2013","date_updated":"2022-01-06T07:00:16Z","date_created":"2018-08-23T12:43:31Z","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","citation":{"mla":"Brassat, Katharina, et al. <i>Colloidal Nano-Lithography: State-of-the-Art</i>. 2013.","apa":"Brassat, K., Pauly, J., Kemper, R., Strake, M., Brodehl, C., Sievers, W., … Lindner, J. (2013). Colloidal nano-lithography: state-of-the-art. Presented at the 46th Biennial Meeting of the German Colloid Society “Morphological Transformations and Responses in Colloidal Systems,” Paderborn.","ieee":"K. Brassat <i>et al.</i>, “Colloidal nano-lithography: state-of-the-art,” presented at the 46th Biennial Meeting of the German Colloid Society “Morphological Transformations and Responses in Colloidal Systems,” Paderborn, 2013.","chicago":"Brassat, Katharina, Johannes Pauly, R. Kemper, M. Strake, Christoph Brodehl, Werner Sievers, Thomas Riedl, and Jörg Lindner. “Colloidal Nano-Lithography: State-of-the-Art,” 2013.","ama":"Brassat K, Pauly J, Kemper R, et al. Colloidal nano-lithography: state-of-the-art. In: ; 2013.","short":"K. Brassat, J. Pauly, R. Kemper, M. Strake, C. Brodehl, W. Sievers, T. Riedl, J. Lindner, in: 2013.","bibtex":"@inproceedings{Brassat_Pauly_Kemper_Strake_Brodehl_Sievers_Riedl_Lindner_2013, title={Colloidal nano-lithography: state-of-the-art}, author={Brassat, Katharina and Pauly, Johannes and Kemper, R. and Strake, M. and Brodehl, Christoph and Sievers, Werner and Riedl, Thomas and Lindner, Jörg}, year={2013} }"}},{"conference":{"end_date":"2012-09-21","location":"Warsaw (Poland)","name":"European Materials Research Society Fall Meeting 2012","start_date":"2012-09-17"},"status":"public","has_accepted_license":"1","publisher":"Wiley","_id":"4098","page":"1485-1489","volume":210,"ddc":["530"],"user_id":"55706","citation":{"ieee":"K. Brassat, F. Assion, U. Hilleringmann, and J. Lindner, “Self-organization of nanospheres in trenches on silicon surfaces,” <i>physica status solidi (a)</i>, vol. 210, no. 8, pp. 1485–1489, 2013.","apa":"Brassat, K., Assion, F., Hilleringmann, U., &#38; Lindner, J. (2013). Self-organization of nanospheres in trenches on silicon surfaces. <i>Physica Status Solidi (A)</i>, <i>210</i>(8), 1485–1489. <a href=\"https://doi.org/10.1002/pssa.201200899\">https://doi.org/10.1002/pssa.201200899</a>","short":"K. Brassat, F. Assion, U. Hilleringmann, J. Lindner, Physica Status Solidi (A) 210 (2013) 1485–1489.","chicago":"Brassat, Katharina, Fabian Assion, Ulrich Hilleringmann, and Jörg Lindner. “Self-Organization of Nanospheres in Trenches on Silicon Surfaces.” <i>Physica Status Solidi (A)</i> 210, no. 8 (2013): 1485–89. <a href=\"https://doi.org/10.1002/pssa.201200899\">https://doi.org/10.1002/pssa.201200899</a>.","mla":"Brassat, Katharina, et al. “Self-Organization of Nanospheres in Trenches on Silicon Surfaces.” <i>Physica Status Solidi (A)</i>, vol. 210, no. 8, Wiley, 2013, pp. 1485–89, doi:<a href=\"https://doi.org/10.1002/pssa.201200899\">10.1002/pssa.201200899</a>.","bibtex":"@article{Brassat_Assion_Hilleringmann_Lindner_2013, title={Self-organization of nanospheres in trenches on silicon surfaces}, volume={210}, DOI={<a href=\"https://doi.org/10.1002/pssa.201200899\">10.1002/pssa.201200899</a>}, number={8}, journal={physica status solidi (a)}, publisher={Wiley}, author={Brassat, Katharina and Assion, Fabian and Hilleringmann, Ulrich and Lindner, Jörg}, year={2013}, pages={1485–1489} }","ama":"Brassat K, Assion F, Hilleringmann U, Lindner J. Self-organization of nanospheres in trenches on silicon surfaces. <i>physica status solidi (a)</i>. 2013;210(8):1485-1489. doi:<a href=\"https://doi.org/10.1002/pssa.201200899\">10.1002/pssa.201200899</a>"},"file_date_updated":"2018-08-23T12:47:33Z","publication_identifier":{"issn":["1862-6300"]},"author":[{"id":"11305","first_name":"Katharina","last_name":"Brassat","full_name":"Brassat, Katharina"},{"first_name":"Fabian","last_name":"Assion","full_name":"Assion, Fabian"},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"title":"Self-organization of nanospheres in trenches on silicon surfaces","year":"2013","intvolume":"       210","article_type":"original","date_updated":"2022-01-06T07:00:16Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1002/pssa.201200899","issue":"8","publication":"physica status solidi (a)","abstract":[{"text":"The selective deposition and self-assembly of nanospheres from a colloidal suspension in trenches on silicon surfaces is investigated using conventional light, confocal laser scanning and scanning electron microscopy. Trenches with widths of one to several nanosphere diameters are formed on silicon surfaces by photolithography and reactive ion etching. The spreading knife convective self-assembly technique is employed to distribute the nanosphere suspension on the pre-patterned surface. It is shown that this technique is particularly useful in combination with a functionalized surface where a selfassembled molecular monolayer changes the contact angle such that sphere deposition takes place almost exclusively in the trenches. By this, lines selectively filled with a chain of beads with a length of 0.5 mm have been achieved.","lang":"eng"}],"date_created":"2018-08-23T12:45:01Z","file":[{"success":1,"content_type":"application/pdf","file_id":"4099","access_level":"closed","file_size":705809,"file_name":"Self-organization of nanospheres in trenches on silicon surfaces.pdf","date_updated":"2018-08-23T12:47:33Z","relation":"main_file","date_created":"2018-08-23T12:47:33Z","creator":"hclaudia"}],"department":[{"_id":"15"},{"_id":"286"},{"_id":"230"},{"_id":"59"}],"type":"journal_article"},{"user_id":"55706","language":[{"iso":"eng"}],"_id":"4100","date_updated":"2022-01-06T07:00:17Z","status":"public","title":"Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation","year":"2013","author":[{"id":"11305","last_name":"Brassat","first_name":"Katharina","full_name":"Brassat, Katharina"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"conference":{"end_date":"2013-03-15","location":"Regensburg","start_date":"2013-03-10","name":"Frühjahrstagung der Deutschen Physikalischen Gesellschaft"},"type":"conference","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-23T12:50:03Z","citation":{"apa":"Brassat, K., &#38; Lindner, J. (2013). Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation. Presented at the Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg.","mla":"Brassat, Katharina, and Jörg Lindner. <i>Selective Deposition of Nanospheres in Trenches on Silicon Surfaces by Self-Organisation</i>. 2013.","ieee":"K. Brassat and J. Lindner, “Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation,” presented at the Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg, 2013.","ama":"Brassat K, Lindner J. Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation. In: ; 2013.","short":"K. Brassat, J. Lindner, in: 2013.","chicago":"Brassat, Katharina, and Jörg Lindner. “Selective Deposition of Nanospheres in Trenches on Silicon Surfaces by Self-Organisation,” 2013.","bibtex":"@inproceedings{Brassat_Lindner_2013, title={Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation}, author={Brassat, Katharina and Lindner, Jörg}, year={2013} }"}},{"citation":{"short":"C. Brodehl, S. Greulich-Weber, J. Lindner, in: 2013.","chicago":"Brodehl, Christoph, Siegmund Greulich-Weber, and Jörg Lindner. “Tailored Structures Produced via Nanosphere Lithography,” 2013.","apa":"Brodehl, C., Greulich-Weber, S., &#38; Lindner, J. (2013). Tailored structures produced via nanosphere lithography. Presented at the Graduate School 1464 on Micro- and Nanostructures in Optoelectronics and Photonics, Paderborn.","ieee":"C. Brodehl, S. Greulich-Weber, and J. Lindner, “Tailored structures produced via nanosphere lithography,” presented at the Graduate School 1464 on Micro- and Nanostructures in Optoelectronics and Photonics, Paderborn, 2013.","ama":"Brodehl C, Greulich-Weber S, Lindner J. Tailored structures produced via nanosphere lithography. In: ; 2013.","bibtex":"@inproceedings{Brodehl_Greulich-Weber_Lindner_2013, title={Tailored structures produced via nanosphere lithography}, author={Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}, year={2013} }","mla":"Brodehl, Christoph, et al. <i>Tailored Structures Produced via Nanosphere Lithography</i>. 2013."},"date_created":"2018-08-23T12:52:05Z","type":"conference","department":[{"_id":"15"},{"_id":"286"}],"status":"public","year":"2013","title":"Tailored structures produced via nanosphere lithography","author":[{"first_name":"Christoph","last_name":"Brodehl","full_name":"Brodehl, Christoph","id":"30380"},{"first_name":"Siegmund","last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund"},{"full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner","id":"20797"}],"conference":{"end_date":"2013-11-26","name":"Graduate School 1464 on Micro- and Nanostructures in Optoelectronics and Photonics","start_date":"2013-11-25","location":"Paderborn"},"date_updated":"2022-01-06T07:00:17Z","_id":"4101","language":[{"iso":"eng"}],"user_id":"55706"},{"user_id":"55706","language":[{"iso":"eng"}],"_id":"4103","date_updated":"2022-01-06T07:00:17Z","author":[{"last_name":"Dogan","first_name":"M.","full_name":"Dogan, M."},{"full_name":"Kemper, R.M.","first_name":"R.M.","last_name":"Kemper"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"end_date":"2013-12-06","location":"Boston","start_date":"2013-12-01","name":"MRS Fall Meeting 2013"},"title":"Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces","status":"public","year":"2013","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-23T12:57:43Z","citation":{"bibtex":"@inproceedings{Dogan_Kemper_Lindner_2013, title={Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces}, author={Dogan, M. and Kemper, R.M. and Lindner, Jörg}, year={2013} }","ama":"Dogan M, Kemper RM, Lindner J. Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces. In: ; 2013.","mla":"Dogan, M., et al. <i>Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces</i>. 2013.","chicago":"Dogan, M., R.M. Kemper, and Jörg Lindner. “Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces,” 2013.","short":"M. Dogan, R.M. Kemper, J. Lindner, in: 2013.","ieee":"M. Dogan, R. M. Kemper, and J. Lindner, “Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces,” presented at the MRS Fall Meeting 2013, Boston, 2013.","apa":"Dogan, M., Kemper, R. M., &#38; Lindner, J. (2013). Dewetting and Redistribution of an Au Catalyst on Nanopatterned 3C-SiC/Si (001) Surfaces. Presented at the MRS Fall Meeting 2013, Boston."}},{"_id":"4106","page":"188-189","user_id":"55706","author":[{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"full_name":"Kemper, R.M.","last_name":"Kemper","first_name":"R.M."},{"full_name":"As, Donald","first_name":"Donald","last_name":"As"},{"first_name":"D.","last_name":"Meeertens","full_name":"Meeertens, D."},{"last_name":"Kovács","first_name":"A.","full_name":"Kovács, A."},{"last_name":"Luysberg","first_name":"M.","full_name":"Luysberg, M."},{"last_name":"Tillmann","first_name":"K.","full_name":"Tillmann, K."}],"conference":{"end_date":"2013-08-30","location":"Regensburg","start_date":"2013-08-25","name":"Proceedings of the Microscopy Conference MC2013"},"title":"Characterization of cubic GaN/AlN multi-quantum wells using state-of-the-art analytical STEM","year":"2013","status":"public","date_updated":"2022-01-06T07:00:18Z","date_created":"2018-08-23T13:06:02Z","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","citation":{"ieee":"J. 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In: ; 2013:188-189."}},{"file_date_updated":"2018-08-23T13:09:31Z","citation":{"bibtex":"@article{Lindner_2013, title={Nanosphere lithography for device fabrication}, DOI={<a href=\"https://doi.org/10.1117/2.1201310.005154\">10.1117/2.1201310.005154</a>}, journal={SPIE Newsroom}, publisher={SPIE-Intl Soc Optical Eng}, author={Lindner, Jörg}, year={2013} }","ama":"Lindner J. Nanosphere lithography for device fabrication. <i>SPIE Newsroom</i>. 2013. doi:<a href=\"https://doi.org/10.1117/2.1201310.005154\">10.1117/2.1201310.005154</a>","mla":"Lindner, Jörg. “Nanosphere Lithography for Device Fabrication.” <i>SPIE Newsroom</i>, SPIE-Intl Soc Optical Eng, 2013, doi:<a href=\"https://doi.org/10.1117/2.1201310.005154\">10.1117/2.1201310.005154</a>.","short":"J. Lindner, SPIE Newsroom (2013).","chicago":"Lindner, Jörg. “Nanosphere Lithography for Device Fabrication.” <i>SPIE Newsroom</i>, 2013. <a href=\"https://doi.org/10.1117/2.1201310.005154\">https://doi.org/10.1117/2.1201310.005154</a>.","ieee":"J. Lindner, “Nanosphere lithography for device fabrication,” <i>SPIE Newsroom</i>, 2013.","apa":"Lindner, J. (2013). 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