[{"conference":{"end_date":"2013-03-15","name":"Frühjahrstagung der Deutschen Physikalischen Gesellschaft","start_date":"2013-03-10","location":"Regensburg (Germany)"},"author":[{"full_name":"Pauly, Johannes","first_name":"Johannes","last_name":"Pauly"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"title":"Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study","status":"public","year":"2013","date_updated":"2022-01-06T07:00:18Z","language":[{"iso":"eng"}],"_id":"4109","user_id":"55706","citation":{"chicago":"Pauly, Johannes, and Jörg Lindner. “Nickel Nanodot Arrays on Silicon Formed by Nanosphere Lithography: A TEM Study,” 2013.","short":"J. Pauly, J. Lindner, in: 2013.","apa":"Pauly, J., &#38; Lindner, J. (2013). Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study. Presented at the Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg (Germany).","ieee":"J. Pauly and J. Lindner, “Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study,” presented at the Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg (Germany), 2013.","ama":"Pauly J, Lindner J. Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study. In: ; 2013.","bibtex":"@inproceedings{Pauly_Lindner_2013, title={Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study}, author={Pauly, Johannes and Lindner, Jörg}, year={2013} }","mla":"Pauly, Johannes, and Jörg Lindner. <i>Nickel Nanodot Arrays on Silicon Formed by Nanosphere Lithography: A TEM Study</i>. 2013."},"date_created":"2018-08-23T13:11:21Z","department":[{"_id":"15"},{"_id":"286"}],"type":"conference"},{"date_updated":"2022-01-06T07:00:18Z","author":[{"last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas","id":"36950"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"conference":{"location":"Boston (USA)","name":"MRS Fall Meeting 2013","start_date":"2013-12-01","end_date":"2013-12-06"},"title":"Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces","status":"public","year":"2013","user_id":"55706","_id":"4110","language":[{"iso":"eng"}],"citation":{"bibtex":"@inproceedings{Riedl_Lindner_2013, title={Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces}, author={Riedl, Thomas and Lindner, Jörg}, year={2013} }","ama":"Riedl T, Lindner J. Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces. In: ; 2013.","mla":"Riedl, Thomas, and Jörg Lindner. <i>Self-Organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces</i>. 2013.","chicago":"Riedl, Thomas, and Jörg Lindner. “Self-Organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces,” 2013.","short":"T. Riedl, J. Lindner, in: 2013.","ieee":"T. Riedl and J. Lindner, “Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces,” presented at the MRS Fall Meeting 2013, Boston (USA), 2013.","apa":"Riedl, T., &#38; Lindner, J. (2013). Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces. Presented at the MRS Fall Meeting 2013, Boston (USA)."},"department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-23T13:12:46Z"},{"author":[{"full_name":"Riedl, Thomas","last_name":"Riedl","first_name":"Thomas","id":"36950"},{"first_name":"A","last_name":"Kirchner","full_name":"Kirchner, A"},{"full_name":"Eymann, K","first_name":"K","last_name":"Eymann"},{"full_name":"Shariq, A","first_name":"A","last_name":"Shariq"},{"full_name":"Schlesiger, R","last_name":"Schlesiger","first_name":"R"},{"last_name":"Schmitz","first_name":"G","full_name":"Schmitz, G"},{"full_name":"Ruhnow, M","last_name":"Ruhnow","first_name":"M"},{"full_name":"Kieback, B","last_name":"Kieback","first_name":"B"}],"publication_identifier":{"issn":["0953-8984","1361-648X"]},"title":"Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys","year":"2013","article_type":"original","intvolume":"        25","publication_status":"published","date_updated":"2022-01-06T07:00:18Z","language":[{"iso":"eng"}],"article_number":"115401 (9 pp.)","doi":"10.1088/0953-8984/25/11/115401","issue":"11","publication":"Journal of Physics: Condensed Matter","abstract":[{"text":"In this article we study the elemental distribution and solute solubility in nanocrystalline alloys of immiscible components near restricted equilibrium for the case of the binary Cu–Ag system. As predicted from thermodynamic considerations, a grain boundary segregated monophase alloy is observed in the annealed mechanically alloyed state for low Ag content by using atom probe tomography. From the detected Ag solute grain boundary enrichment the\r\nsegregation free enthalpy is estimated to range between -25 and -49 kJ mol^-1 following the McLean equation, in agreement with values reported for coarse-grained Cu–Ag. The extension of the alloying range is described by a two-domain thermodynamic model that considers the excess free volume in the grain boundaries and the strain in the strain interior on the basis of the universal equation of state at negative pressure. To access the grain boundary volumetric strain experimentally, a method based on a combination of density measurements and microscopical quantification of closed pore areas is presented. Moreover, we apply x-ray diffraction line broadening analysis to determine the local strain amplitude, which yields a root-mean-square microstrain of \u00180.3% for a grain size of \u001830 nm. It is shown that the grain boundary free volume represents the major origin for the global solubility enhancement in\r\nnanocrystalline Cu–Ag at 503 K.","lang":"eng"}],"date_created":"2018-08-23T13:18:34Z","file":[{"creator":"hclaudia","date_created":"2018-08-23T13:21:21Z","relation":"main_file","date_updated":"2018-08-23T13:21:21Z","file_name":"Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu-Ag alloys.pdf","file_size":1116530,"access_level":"closed","file_id":"4112","success":1,"content_type":"application/pdf"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","status":"public","has_accepted_license":"1","_id":"4111","publisher":"IOP Publishing","volume":25,"user_id":"55706","ddc":["530"],"citation":{"mla":"Riedl, Thomas, et al. “Elemental Distribution, Solute Solubility and Defect Free Volume in Nanocrystalline Restricted-Equilibrium Cu–Ag Alloys.” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 11, 115401 (9 pp.), IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0953-8984/25/11/115401\">10.1088/0953-8984/25/11/115401</a>.","bibtex":"@article{Riedl_Kirchner_Eymann_Shariq_Schlesiger_Schmitz_Ruhnow_Kieback_2013, title={Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/25/11/115401\">10.1088/0953-8984/25/11/115401</a>}, number={11115401 (9 pp.)}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Riedl, Thomas and Kirchner, A and Eymann, K and Shariq, A and Schlesiger, R and Schmitz, G and Ruhnow, M and Kieback, B}, year={2013} }","ama":"Riedl T, Kirchner A, Eymann K, et al. Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys. <i>Journal of Physics: Condensed Matter</i>. 2013;25(11). doi:<a href=\"https://doi.org/10.1088/0953-8984/25/11/115401\">10.1088/0953-8984/25/11/115401</a>","ieee":"T. Riedl <i>et al.</i>, “Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys,” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 11, 2013.","apa":"Riedl, T., Kirchner, A., Eymann, K., Shariq, A., Schlesiger, R., Schmitz, G., … Kieback, B. (2013). Elemental distribution, solute solubility and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys. <i>Journal of Physics: Condensed Matter</i>, <i>25</i>(11). <a href=\"https://doi.org/10.1088/0953-8984/25/11/115401\">https://doi.org/10.1088/0953-8984/25/11/115401</a>","short":"T. Riedl, A. Kirchner, K. Eymann, A. Shariq, R. Schlesiger, G. Schmitz, M. Ruhnow, B. Kieback, Journal of Physics: Condensed Matter 25 (2013).","chicago":"Riedl, Thomas, A Kirchner, K Eymann, A Shariq, R Schlesiger, G Schmitz, M Ruhnow, and B Kieback. “Elemental Distribution, Solute Solubility and Defect Free Volume in Nanocrystalline Restricted-Equilibrium Cu–Ag Alloys.” <i>Journal of Physics: Condensed Matter</i> 25, no. 11 (2013). <a href=\"https://doi.org/10.1088/0953-8984/25/11/115401\">https://doi.org/10.1088/0953-8984/25/11/115401</a>."},"file_date_updated":"2018-08-23T13:21:21Z"},{"type":"conference","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-23T13:25:02Z","citation":{"apa":"Lindner, J. (2013). Ion Interactions with Nanopatterned Surfaces. Presented at the 18th International Conference on Surface Modification of Materials by Ion Beams, Kusadasi (Turkey).","ieee":"J. Lindner, “Ion Interactions with Nanopatterned Surfaces,” presented at the 18th International Conference on Surface Modification of Materials by Ion Beams, Kusadasi (Turkey), 2013.","short":"J. Lindner, in: 2013.","chicago":"Lindner, Jörg. “Ion Interactions with Nanopatterned Surfaces,” 2013.","mla":"Lindner, Jörg. <i>Ion Interactions with Nanopatterned Surfaces</i>. 2013.","ama":"Lindner J. Ion Interactions with Nanopatterned Surfaces. In: ; 2013.","bibtex":"@inproceedings{Lindner_2013, title={Ion Interactions with Nanopatterned Surfaces}, author={Lindner, Jörg}, year={2013} }"},"user_id":"55706","language":[{"iso":"eng"}],"_id":"4113","date_updated":"2022-01-06T07:00:18Z","title":"Ion Interactions with Nanopatterned Surfaces","status":"public","year":"2013","conference":{"location":"Kusadasi (Turkey)","name":"18th International Conference on Surface Modification of Materials by Ion Beams","start_date":"2013-09-15","end_date":"2013-09-20"},"author":[{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}]},{"volume":178,"user_id":"55706","ddc":["530"],"publisher":"Elsevier BV","_id":"4095","page":"635-638","has_accepted_license":"1","conference":{"end_date":"2012-05-18","location":"Straßburg (France)","start_date":"2012-05-14","name":"European Materials Research Society Spring Meeting 2012"},"status":"public","citation":{"mla":"Achtelik, J., et al. “Biomimetic Approaches to Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.” <i>Materials Science and Engineering: B</i>, vol. 178, no. 9, Elsevier BV, 2012, pp. 635–38, doi:<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>.","bibtex":"@article{Achtelik_Sievers_Lindner_2012, title={Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques}, volume={178}, DOI={<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>}, number={9}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Achtelik, J. and Sievers, W. and Lindner, Jörg}, year={2012}, pages={635–638} }","ama":"Achtelik J, Sievers W, Lindner J. Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques. <i>Materials Science and Engineering: B</i>. 2012;178(9):635-638. doi:<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>","ieee":"J. Achtelik, W. Sievers, and J. Lindner, “Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques,” <i>Materials Science and Engineering: B</i>, vol. 178, no. 9, pp. 635–638, 2012.","apa":"Achtelik, J., Sievers, W., &#38; Lindner, J. (2012). Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques. <i>Materials Science and Engineering: B</i>, <i>178</i>(9), 635–638. <a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">https://doi.org/10.1016/j.mseb.2012.10.014</a>","short":"J. Achtelik, W. Sievers, J. Lindner, Materials Science and Engineering: B 178 (2012) 635–638.","chicago":"Achtelik, J., W. Sievers, and Jörg Lindner. “Biomimetic Approaches to Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.” <i>Materials Science and Engineering: B</i> 178, no. 9 (2012): 635–38. <a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">https://doi.org/10.1016/j.mseb.2012.10.014</a>."},"file_date_updated":"2018-08-23T12:39:27Z","doi":"10.1016/j.mseb.2012.10.014","language":[{"iso":"eng"}],"article_type":"original","intvolume":"       178","publication_status":"published","date_updated":"2022-01-06T07:00:16Z","author":[{"last_name":"Achtelik","first_name":"J.","full_name":"Achtelik, J."},{"last_name":"Sievers","first_name":"W.","full_name":"Sievers, W."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}],"publication_identifier":{"issn":["0921-5107"]},"year":"2012","title":"Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques","department":[{"_id":"15"},{"_id":"286"},{"_id":"230"}],"type":"journal_article","date_created":"2018-08-23T12:37:40Z","file":[{"access_level":"closed","file_size":729276,"file_name":"Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques.pdf","date_updated":"2018-08-23T12:39:27Z","relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4096","creator":"hclaudia","date_created":"2018-08-23T12:39:27Z"}],"abstract":[{"lang":"eng","text":"Aiming to diminish the reflection losses of glass covered light harvesting devices, the optical reflectivity\r\nof nanostructured glass surfaces is studied theoretically and experimentally. The work is inspired by\r\nthe nanoscale roughness of insect eyes, which is tried to be replicated on a technical glass surface. To\r\nthis end, the reflectivity of glass surfaces with topographies represented by linear, parabolic and Fermishaped\r\nglass/air fill factor profiles is calculated for normal incidence. It is shown that using the latter ones,\r\nan almost complete suppression of reflections can be achieved. A simple, self-organization technique to\r\ncreate such Fermi-shaped filling factor profiles in glass experimentally is also presented."}],"publication":"Materials Science and Engineering: B","issue":"9"},{"publication":"MRS Proceedings","abstract":[{"lang":"eng","text":"Two methods to create biomimetic anti-reflection nanostructures in ordinary glass microscope object slides are presented. One technique is based on a nanosphere lithography process combined with physical vapour deposition of nickel and reactive ion etching (RIE). The other uses plasma induced dewetting of a smooth nickel surface. The amount of reflected light was measured and a method to simulate the reflectivity from an atomic force microscopy (AFM) topography scan of the glass surface is presented. The reflectivity for visible light at normal incidence was reduced to 20-50 % of the original value with both methods and the simulation gives results in good agreement to the measurement."}],"date_created":"2018-08-23T13:29:50Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"year":"2012","title":"Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces","publication_identifier":{"issn":["1946-4274"]},"author":[{"last_name":"Achtelik","first_name":"Jörn","full_name":"Achtelik, Jörn"},{"full_name":"Kemper, Ricarda M.","last_name":"Kemper","first_name":"Ricarda M."},{"full_name":"Sievers, Werner","last_name":"Sievers","first_name":"Werner"},{"full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"publication_status":"published","date_updated":"2022-01-06T07:00:18Z","article_type":"original","intvolume":"      1389","language":[{"iso":"eng"}],"doi":"10.1557/opl.2012.491","citation":{"bibtex":"@article{Achtelik_Kemper_Sievers_Lindner_2012, title={Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces}, volume={1389}, DOI={<a href=\"https://doi.org/10.1557/opl.2012.491\">10.1557/opl.2012.491</a>}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Achtelik, Jörn and Kemper, Ricarda M. and Sievers, Werner and Lindner, Jörg}, year={2012} }","ama":"Achtelik J, Kemper RM, Sievers W, Lindner J. Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces. <i>MRS Proceedings</i>. 2012;1389. doi:<a href=\"https://doi.org/10.1557/opl.2012.491\">10.1557/opl.2012.491</a>","mla":"Achtelik, Jörn, et al. “Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces.” <i>MRS Proceedings</i>, vol. 1389, Cambridge University Press (CUP), 2012, doi:<a href=\"https://doi.org/10.1557/opl.2012.491\">10.1557/opl.2012.491</a>.","short":"J. Achtelik, R.M. Kemper, W. Sievers, J. Lindner, MRS Proceedings 1389 (2012).","chicago":"Achtelik, Jörn, Ricarda M. Kemper, Werner Sievers, and Jörg Lindner. “Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces.” <i>MRS Proceedings</i> 1389 (2012). <a href=\"https://doi.org/10.1557/opl.2012.491\">https://doi.org/10.1557/opl.2012.491</a>.","ieee":"J. Achtelik, R. M. Kemper, W. Sievers, and J. Lindner, “Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces,” <i>MRS Proceedings</i>, vol. 1389, 2012.","apa":"Achtelik, J., Kemper, R. M., Sievers, W., &#38; Lindner, J. (2012). Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces. <i>MRS Proceedings</i>, <i>1389</i>. <a href=\"https://doi.org/10.1557/opl.2012.491\">https://doi.org/10.1557/opl.2012.491</a>"},"status":"public","conference":{"end_date":"2011-12-02","location":"Boston (USA)","name":"MRS Fall Meeting 2011","start_date":"2011-11-28"},"publisher":"Cambridge University Press (CUP)","_id":"4114","user_id":"55706","volume":1389},{"date_updated":"2022-01-06T07:00:18Z","conference":{"location":"Paderborn","start_date":"2012-12-04","name":"GRK1464 Convention on Micro- and Nanostructures in Optoelectronics and Photonics","end_date":"2012-12-04"},"author":[{"full_name":"Brodehl, Christoph","last_name":"Brodehl","first_name":"Christoph","id":"30380"},{"full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber","first_name":"Siegmund"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"title":"Gyrotropic Metamaterials","year":"2012","status":"public","user_id":"55706","language":[{"iso":"eng"}],"_id":"4115","citation":{"ieee":"C. Brodehl, S. Greulich-Weber, and J. Lindner, “Gyrotropic Metamaterials,” presented at the GRK1464 Convention on Micro- and Nanostructures in Optoelectronics and Photonics, Paderborn, 2012.","apa":"Brodehl, C., Greulich-Weber, S., &#38; Lindner, J. (2012). Gyrotropic Metamaterials. Presented at the GRK1464 Convention on Micro- and Nanostructures in Optoelectronics and Photonics, Paderborn.","short":"C. Brodehl, S. Greulich-Weber, J. Lindner, in: 2012.","chicago":"Brodehl, Christoph, Siegmund Greulich-Weber, and Jörg Lindner. “Gyrotropic Metamaterials,” 2012.","mla":"Brodehl, Christoph, et al. <i>Gyrotropic Metamaterials</i>. 2012.","bibtex":"@inproceedings{Brodehl_Greulich-Weber_Lindner_2012, title={Gyrotropic Metamaterials}, author={Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}, year={2012} }","ama":"Brodehl C, Greulich-Weber S, Lindner J. Gyrotropic Metamaterials. In: ; 2012."},"department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-23T13:34:01Z"},{"file_date_updated":"2018-08-27T11:35:10Z","citation":{"mla":"Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 9, no. 3–4, Wiley, 2012, pp. 1028–31, doi:<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>.","ama":"Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). <i>physica status solidi (c)</i>. 2012;9(3-4):1028-1031. doi:<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>","bibtex":"@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>}, number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M. and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.}, year={2012}, pages={1028–1031} }","apa":"Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., … Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>9</i>(3–4), 1028–1031. <a href=\"https://doi.org/10.1002/pssc.201100174\">https://doi.org/10.1002/pssc.201100174</a>","ieee":"R. M. Kemper <i>et al.</i>, “Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 9, no. 3–4, pp. 1028–1031, 2012.","chicago":"Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 9, no. 3–4 (2012): 1028–31. <a href=\"https://doi.org/10.1002/pssc.201100174\">https://doi.org/10.1002/pssc.201100174</a>.","short":"R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi (C) 9 (2012) 1028–1031."},"user_id":"20798","ddc":["530"],"volume":9,"page":"1028-1031","_id":"4131","publisher":"Wiley","has_accepted_license":"1","status":"public","type":"journal_article","department":[{"_id":"286"},{"_id":"287"},{"_id":"15"},{"_id":"230"},{"_id":"35"}],"file":[{"date_created":"2018-08-27T11:35:10Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4132","date_updated":"2018-08-27T11:35:10Z","relation":"main_file","file_size":848414,"access_level":"closed","file_name":"Formation of defects in cubic GaN grown on nano-patterned 3C-SiC 001.pdf"}],"date_created":"2018-08-27T11:31:07Z","abstract":[{"lang":"eng","text":"We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular\r\nbeam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive\r\nion etching process. Atomic force microscopy and scanning electron microscopy show that the selectivearea-\r\ngrown cubic GaN nucleates in two structurally different domains, which most probably originate from the\r\nsubstrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to\r\ntwo different surface morphologies. The dominant phase within these domains was measured by electron backscatter\r\ndiffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy."}],"issue":"3-4","publication":"physica status solidi (c)","doi":"10.1002/pssc.201100174","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:00:23Z","article_type":"original","intvolume":"         9","title":"Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)","year":"2012","author":[{"last_name":"Kemper","first_name":"R. M.","full_name":"Kemper, R. M."},{"last_name":"Häberlen","first_name":"M.","full_name":"Häberlen, M."},{"full_name":"Schupp, T.","first_name":"T.","last_name":"Schupp"},{"full_name":"Weinl, M.","last_name":"Weinl","first_name":"M."},{"last_name":"Bürger","first_name":"M.","full_name":"Bürger, M."},{"full_name":"Ruth, M.","last_name":"Ruth","first_name":"M."},{"full_name":"Meier, Cedrik","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798"},{"last_name":"Niendorf","first_name":"T.","full_name":"Niendorf, T."},{"last_name":"Maier","first_name":"H. J.","full_name":"Maier, H. J."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"full_name":"As, D. J.","last_name":"As","first_name":"D. J."},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"}],"publication_identifier":{"issn":["1862-6351"]}},{"user_id":"55706","_id":"4133","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:23Z","conference":{"end_date":"2012-09-21","start_date":"2012-09-16","name":"European Microscopy Congress (EMC) 2012","location":"Manchester (UK)"},"author":[{"full_name":"Kemper, R.M.","last_name":"Kemper","first_name":"R.M."},{"full_name":"Hiller, L.","first_name":"L.","last_name":"Hiller"},{"first_name":"T.","last_name":"Stauden","full_name":"Stauden, T."},{"full_name":"Pezoldt, J. ","first_name":"J. ","last_name":"Pezoldt"},{"last_name":"Meertens","first_name":"D.","full_name":"Meertens, D."},{"first_name":"M. ","last_name":"Luysberg","full_name":"Luysberg, M. "},{"full_name":"Tillmann, K.","last_name":"Tillmann","first_name":"K."},{"last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas","id":"36950"},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"year":"2012","status":"public","title":"TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","date_created":"2018-08-27T12:14:30Z","citation":{"mla":"Kemper, R. M., et al. <i>TEM Investigation of GaN Thin Films Grown on Nanostructured 3C-SiC/Si(001) Substrates</i>. 2012.","bibtex":"@inproceedings{Kemper_Hiller_Stauden_Pezoldt_Meertens_Luysberg_Tillmann_Riedl_As_Lindner_2012, title={TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J.  and Meertens, D. and Luysberg, M.  and Tillmann, K. and Riedl, Thomas and As, Donald and Lindner, Jörg}, year={2012} }","ama":"Kemper RM, Hiller L, Stauden T, et al. TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates. In: ; 2012.","ieee":"R. M. Kemper <i>et al.</i>, “TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates,” presented at the European Microscopy Congress (EMC) 2012, Manchester (UK), 2012.","apa":"Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., Luysberg, M., … Lindner, J. (2012). TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates. Presented at the European Microscopy Congress (EMC) 2012, Manchester (UK).","short":"R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, K. Tillmann, T. Riedl, D. As, J. Lindner, in: 2012.","chicago":"Kemper, R.M., L. Hiller, T. Stauden, J.  Pezoldt, D. Meertens, M.  Luysberg, K. Tillmann, Thomas Riedl, Donald As, and Jörg Lindner. “TEM Investigation of GaN Thin Films Grown on Nanostructured 3C-SiC/Si(001) Substrates,” 2012."}},{"_id":"4134","language":[{"iso":"eng"}],"user_id":"55706","author":[{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"conference":{"name":"E-MRS Fall Meeting 2012","start_date":"2012-09-17","location":"Warsaw (Poland)","end_date":"2012-09-21"},"title":"Nanosphere Lithography: State-of-the-art and Future Directions","status":"public","year":"2012","date_updated":"2022-01-06T07:00:23Z","date_created":"2018-08-27T12:16:17Z","department":[{"_id":"15"},{"_id":"286"}],"type":"conference","citation":{"short":"J. Lindner, in: 2012.","ama":"Lindner J. Nanosphere Lithography: State-of-the-art and Future Directions. In: ; 2012.","chicago":"Lindner, Jörg. “Nanosphere Lithography: State-of-the-Art and Future Directions,” 2012.","bibtex":"@inproceedings{Lindner_2012, title={Nanosphere Lithography: State-of-the-art and Future Directions}, author={Lindner, Jörg}, year={2012} }","mla":"Lindner, Jörg. <i>Nanosphere Lithography: State-of-the-Art and Future Directions</i>. 2012.","apa":"Lindner, J. (2012). Nanosphere Lithography: State-of-the-art and Future Directions. Presented at the E-MRS Fall Meeting 2012, Warsaw (Poland).","ieee":"J. Lindner, “Nanosphere Lithography: State-of-the-art and Future Directions,” presented at the E-MRS Fall Meeting 2012, Warsaw (Poland), 2012."}},{"language":[{"iso":"eng"}],"_id":"4135","user_id":"55706","conference":{"name":"E-MRS Fall Meeting 2012","start_date":"2012-09-17","location":"Warsaw (Poland)","end_date":"2012-09-21"},"author":[{"full_name":"Pauly, Johannes","first_name":"Johannes","last_name":"Pauly"},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"}],"status":"public","title":"TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography","year":"2012","date_updated":"2022-01-06T07:00:23Z","date_created":"2018-08-27T12:17:43Z","department":[{"_id":"286"}],"type":"conference","citation":{"apa":"Pauly, J., &#38; Lindner, J. (2012). TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography. Presented at the E-MRS Fall Meeting 2012, Warsaw (Poland).","ieee":"J. Pauly and J. Lindner, “TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography,” presented at the E-MRS Fall Meeting 2012, Warsaw (Poland), 2012.","short":"J. Pauly, J. Lindner, in: 2012.","chicago":"Pauly, Johannes, and Jörg Lindner. “TEM Characterization of Nickel Nanodot Arrays on Silicon Formed by Nanosphere Lithography,” 2012.","mla":"Pauly, Johannes, and Jörg Lindner. <i>TEM Characterization of Nickel Nanodot Arrays on Silicon Formed by Nanosphere Lithography</i>. 2012.","ama":"Pauly J, Lindner J. TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography. In: ; 2012.","bibtex":"@inproceedings{Pauly_Lindner_2012, title={TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography}, author={Pauly, Johannes and Lindner, Jörg}, year={2012} }"}},{"date_created":"2018-08-27T12:23:09Z","type":"conference","department":[{"_id":"15"},{"_id":"286"}],"citation":{"apa":"Lindner, J. (2012). Nanokugellithographie: Grundlagen und Anwendungen. Presented at the Firmenseminar der Carl Zeiss AG, Oberkochen und Jena (online).","ieee":"J. Lindner, “Nanokugellithographie: Grundlagen und Anwendungen,” presented at the Firmenseminar der Carl Zeiss AG, Oberkochen und Jena (online), 2012.","short":"J. Lindner, in: 2012.","chicago":"Lindner, Jörg. “Nanokugellithographie: Grundlagen Und Anwendungen,” 2012.","mla":"Lindner, Jörg. <i>Nanokugellithographie: Grundlagen Und Anwendungen</i>. 2012.","ama":"Lindner J. Nanokugellithographie: Grundlagen und Anwendungen. In: ; 2012.","bibtex":"@inproceedings{Lindner_2012, title={Nanokugellithographie: Grundlagen und Anwendungen}, author={Lindner, Jörg}, year={2012} }"},"language":[{"iso":"eng"}],"_id":"4138","user_id":"55706","status":"public","year":"2012","title":"Nanokugellithographie: Grundlagen und Anwendungen","author":[{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"end_date":"2012-03-26","location":"Oberkochen und Jena (online)","name":"Firmenseminar der Carl Zeiss AG","start_date":"2012-03-26"},"date_updated":"2022-01-06T07:00:23Z"},{"citation":{"apa":"Lindner, J. (2012). Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen. Presented at the Kolloquium des Leibniz Instituts für Oberflächenmodifizierung IOM, Leipzig (Germany).","ieee":"J. Lindner, “Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen,” presented at the Kolloquium des Leibniz Instituts für Oberflächenmodifizierung IOM, Leipzig (Germany), 2012.","chicago":"Lindner, Jörg. “Nanolithographie von Oberflächen Für Das Wachstum Optoelektronischer Strukturen,” 2012.","short":"J. Lindner, in: 2012.","mla":"Lindner, Jörg. <i>Nanolithographie von Oberflächen Für Das Wachstum Optoelektronischer Strukturen</i>. 2012.","ama":"Lindner J. Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen. In: ; 2012.","bibtex":"@inproceedings{Lindner_2012, title={Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen}, author={Lindner, Jörg}, year={2012} }"},"type":"conference","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-27T12:24:36Z","date_updated":"2022-01-06T07:00:23Z","status":"public","year":"2012","title":"Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen","author":[{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"end_date":"2012-07-26","name":"Kolloquium des Leibniz Instituts für Oberflächenmodifizierung IOM","start_date":"2012-07-26","location":"Leipzig (Germany)"},"user_id":"55706","_id":"4139","language":[{"iso":"eng"}]},{"author":[{"first_name":"Lars","last_name":"Hiller","full_name":"Hiller, Lars"},{"last_name":"Stauden","first_name":"Thomas","full_name":"Stauden, Thomas"},{"first_name":"Ricarda M.","last_name":"Kemper","full_name":"Kemper, Ricarda M."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"full_name":"As, Donat J.","last_name":"As","first_name":"Donat J.","orcid":"0000-0003-1121-3565","id":"14"},{"first_name":"Jörg","last_name":"Pezoldt","full_name":"Pezoldt, Jörg"}],"publication_identifier":{"issn":["1662-9752"]},"year":"2012","title":"ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures","article_type":"original","date_updated":"2023-10-09T09:09:13Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.4028/www.scientific.net/msf.717-720.901","publication":"Materials Science Forum","abstract":[{"text":"Anisotropic etching processes for mesa structure formation using fluorinated plasma\r\natmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic\r\nsubstrates with 10 μm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a\r\nspecial gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma\r\nwas designed. The influence of the etching mask material on the sidewall morphology was\r\ninvestigated. Masking materials with small grain sizes are preferable to achieve a desired shape.\r\nThe evolution of the mesa form was investigated in dependence on the gas composition, the applied\r\nbias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5\r\ndeg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching\r\nprocess were between 5 and 10. Mesa structures aligned to [100] and [110] directions were\r\nfabricated.","lang":"eng"}],"date_created":"2018-08-23T13:35:20Z","file":[{"date_created":"2018-08-23T13:37:42Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4117","access_level":"closed","file_size":1309453,"file_name":"ECR-etching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.pdf","date_updated":"2018-08-23T13:37:42Z","relation":"main_file"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","conference":{"location":"Cleveland (USA)","name":"International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011"},"status":"public","has_accepted_license":"1","publisher":"Trans Tech Publications","_id":"4116","page":"901-904","volume":"717-720","ddc":["530"],"user_id":"14931","citation":{"mla":"Hiller, Lars, et al. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i>, vol. 717–720, Trans Tech Publications, 2012, pp. 901–04, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>.","apa":"Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &#38; Pezoldt, J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>, <i>717–720</i>, 901–904. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">https://doi.org/10.4028/www.scientific.net/msf.717-720.901</a>","ieee":"L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” <i>Materials Science Forum</i>, vol. 717–720, pp. 901–904, 2012, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>.","short":"L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.","ama":"Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>. 2012;717-720:901-904. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>","chicago":"Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i> 717–720 (2012): 901–4. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">https://doi.org/10.4028/www.scientific.net/msf.717-720.901</a>.","bibtex":"@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2012, title={ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}, volume={717–720}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2012}, pages={901–904} }"},"file_date_updated":"2018-08-23T13:37:42Z"},{"doi":"10.1016/j.jcrysgro.2012.10.011","language":[{"iso":"eng"}],"article_type":"original","intvolume":"       378","publication_status":"published","date_updated":"2025-12-16T08:12:58Z","publication_identifier":{"issn":["0022-0248"]},"author":[{"full_name":"Kemper, R.M.","first_name":"R.M.","last_name":"Kemper"},{"first_name":"L.","last_name":"Hiller","full_name":"Hiller, L."},{"first_name":"T.","last_name":"Stauden","full_name":"Stauden, T."},{"full_name":"Pezoldt, J.","last_name":"Pezoldt","first_name":"J."},{"full_name":"Duschik, K.","last_name":"Duschik","first_name":"K."},{"full_name":"Niendorf, T.","last_name":"Niendorf","first_name":"T."},{"full_name":"Maier, H.J.","first_name":"H.J.","last_name":"Maier"},{"full_name":"Meertens, D.","last_name":"Meertens","first_name":"D."},{"last_name":"Tillmann","first_name":"K.","full_name":"Tillmann, K."},{"full_name":"As, D.J.","last_name":"As","first_name":"D.J."},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"}],"year":"2012","title":"Growth of cubic GaN on 3C–SiC/Si (001) nanostructures","department":[{"_id":"15"},{"_id":"286"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2018-08-23T12:59:44Z","file":[{"date_created":"2018-08-23T13:01:13Z","creator":"hclaudia","file_id":"4105","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-23T13:01:13Z","file_name":"Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf","access_level":"closed","file_size":3716730}],"abstract":[{"lang":"eng","text":"We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas."}],"publication":"Journal of Crystal Growth","volume":378,"user_id":"16199","ddc":["530"],"publisher":"Elsevier BV","_id":"4104","page":"291-294","has_accepted_license":"1","conference":{"name":"17th Int. Conference on MBE 2012","location":"Nara (Japan)"},"status":"public","citation":{"chicago":"Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” <i>Journal of Crystal Growth</i> 378 (2012): 291–94. <a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>.","ama":"Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. <i>Journal of Crystal Growth</i>. 2012;378:291-294. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>","short":"R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.","bibtex":"@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.}, year={2012}, pages={291–294} }","apa":"Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H. J., Meertens, D., Tillmann, K., As, D. J., &#38; Lindner, J. (2012). Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. <i>Journal of Crystal Growth</i>, <i>378</i>, 291–294. <a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” <i>Journal of Crystal Growth</i>, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>.","ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” <i>Journal of Crystal Growth</i>, vol. 378, pp. 291–294, 2012, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>."},"file_date_updated":"2018-08-23T13:01:13Z"},{"abstract":[{"text":"Results of atomistic simulations aimed at understanding precipitation of the highly attractive wide band gap\r\nsemiconductor material silicon carbide in silicon are presented. The study involves a systematic investigation of\r\nintrinsic and carbon-related defects as well as defect combinations and defect migration by both, quantummechanical\r\nfirst-principles as well as empirical potential methods. Comparing formation and activation energies,\r\nground-state structures of defects and defect combinations as well as energetically favorable agglomeration of\r\ndefects are predicted. Moreover, accurate ab initio calculations unveil limitations of the analytical method based\r\non a Tersoff-like bond order potential. A work-around is proposed in order to subsequently apply the highly efficient technique on large structures not accessible by first-principles methods. The outcome of both types of simulation provides a basic microscopic understanding of defect formation and structural evolution particularly at non-equilibrium conditions strongly deviated from the ground state as commonly found in SiC growth processes. A possible precipitation mechanism, which conforms well to experimental findings and clarifies contradictory views present in the literature is outlined.","lang":"eng"}],"issue":"10-11","publication":"physica status solidi (c)","type":"journal_article","department":[{"_id":"15"},{"_id":"286"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"file":[{"date_created":"2018-08-27T12:19:56Z","creator":"hclaudia","file_id":"4137","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-27T12:19:56Z","file_name":"First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon.pdf","file_size":283206,"access_level":"closed"}],"date_created":"2018-08-27T12:19:26Z","date_updated":"2025-12-16T11:28:58Z","publication_status":"published","intvolume":"         9","article_type":"original","title":"First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon","year":"2012","author":[{"last_name":"Zirkelbach","first_name":"F.","full_name":"Zirkelbach, F."},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."},{"full_name":"Nordlund, K.","first_name":"K.","last_name":"Nordlund"},{"full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","id":"468"},{"last_name":"Rauls","first_name":"E.","full_name":"Rauls, E."},{"first_name":"Jörg K. N.","last_name":"Lindner","full_name":"Lindner, Jörg K. N.","id":"20797"}],"publication_identifier":{"issn":["1862-6351"]},"doi":"10.1002/pssc.201200198","language":[{"iso":"eng"}],"file_date_updated":"2018-08-27T12:19:56Z","citation":{"short":"F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N. Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Wolf Gero Schmidt, E. Rauls, and Jörg K. N. Lindner. “First-Principles and Empirical Potential Simulation Study of Intrinsic and Carbon-Related Defects in Silicon.” <i>Physica Status Solidi (c)</i> 9, no. 10–11 (2012): 1968–73. <a href=\"https://doi.org/10.1002/pssc.201200198\">https://doi.org/10.1002/pssc.201200198</a>.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., &#38; Lindner, J. K. N. (2012). First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. <i>Physica Status Solidi (c)</i>, <i>9</i>(10–11), 1968–1973. <a href=\"https://doi.org/10.1002/pssc.201200198\">https://doi.org/10.1002/pssc.201200198</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, W. G. Schmidt, E. Rauls, and J. K. N. Lindner, “First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon,” <i>physica status solidi (c)</i>, vol. 9, no. 10–11, pp. 1968–1973, 2012, doi: <a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. <i>physica status solidi (c)</i>. 2012;9(10-11):1968-1973. doi:<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Schmidt_Rauls_Lindner_2012, title={First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>}, number={10–11}, journal={physica status solidi (c)}, publisher={Wiley}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Schmidt, Wolf Gero and Rauls, E. and Lindner, Jörg K. N.}, year={2012}, pages={1968–1973} }","mla":"Zirkelbach, F., et al. “First-Principles and Empirical Potential Simulation Study of Intrinsic and Carbon-Related Defects in Silicon.” <i>Physica Status Solidi (c)</i>, vol. 9, no. 10–11, Wiley, 2012, pp. 1968–73, doi:<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>."},"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"16199","volume":9,"page":"1968-1973","publisher":"Wiley","_id":"4136"},{"language":[{"iso":"eng"}],"doi":"10.1016/j.nimb.2011.01.092","publication_identifier":{"issn":["0168-583X"]},"author":[{"full_name":"Häberlen, M.","last_name":"Häberlen","first_name":"M."},{"full_name":"Murphy, B.","last_name":"Murphy","first_name":"B."},{"full_name":"Stritzker, B.","first_name":"B.","last_name":"Stritzker"},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"}],"year":"2011","title":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering","article_type":"original","intvolume":"       272","publication_status":"published","date_updated":"2022-01-06T07:00:23Z","date_created":"2018-08-27T12:27:23Z","file":[{"success":1,"content_type":"application/pdf","file_id":"4141","file_size":772335,"access_level":"closed","file_name":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.pdf","date_updated":"2018-08-27T12:29:34Z","relation":"main_file","date_created":"2018-08-27T12:29:34Z","creator":"hclaudia"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","abstract":[{"lang":"eng","text":"In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting\r\nof nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing\r\nyields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures."}],"_id":"4140","publisher":"Elsevier BV","page":"322-325","volume":272,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1","citation":{"mla":"Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, Elsevier BV, 2011, pp. 322–25, doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>.","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering}, volume={272}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy, B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2011;272:322-325. doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, pp. 322–325, 2011.","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>272</i>, 322–325. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.","chicago":"Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 272 (2011): 322–25. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>."},"file_date_updated":"2018-08-27T12:29:34Z"},{"date_updated":"2022-01-06T07:00:24Z","publication_status":"published","intvolume":"         8","article_type":"original","title":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation","year":"2011","publication_identifier":{"issn":["1862-6351"]},"author":[{"last_name":"Häberlen","first_name":"Maik","full_name":"Häberlen, Maik"},{"full_name":"Murphy, Brian","last_name":"Murphy","first_name":"Brian"},{"full_name":"Stritzker, Bernd","first_name":"Bernd","last_name":"Stritzker"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"doi":"10.1002/pssc.201000342","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized 3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a near-interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High-resolution X-ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide-bandgap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co-implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well."}],"publication":"physica status solidi (c)","issue":"3","type":"journal_article","department":[{"_id":"286"}],"file":[{"creator":"hclaudia","date_created":"2018-08-27T12:32:07Z","file_size":152623,"access_level":"closed","file_name":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.pdf","date_updated":"2018-08-27T12:32:07Z","relation":"main_file","content_type":"application/pdf","success":1,"file_id":"4143"}],"date_created":"2018-08-27T12:31:20Z","has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"55706","volume":8,"page":"944-947","publisher":"Wiley","_id":"4142","file_date_updated":"2018-08-27T12:32:07Z","citation":{"mla":"Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 3, Wiley, 2011, pp. 944–47, doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>.","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>physica status solidi (c)</i>. 2011;8(3):944-947. doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>}, number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen, Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947} }","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>Physica Status Solidi (C)</i>, <i>8</i>(3), 944–947. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” <i>physica status solidi (c)</i>, vol. 8, no. 3, pp. 944–947, 2011.","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.","chicago":"Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i> 8, no. 3 (2011): 944–47. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>."}},{"status":"public","has_accepted_license":"1","publisher":"Elsevier BV","_id":"4148","page":"2400-2403","volume":131,"user_id":"55706","ddc":["530"],"citation":{"bibtex":"@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>}, number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand, Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer, S.}, year={2011}, pages={2400–2403} }","short":"M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.","ama":"Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. <i>Journal of Luminescence</i>. 2011;131(11):2400-2403. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>","chicago":"Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” <i>Journal of Luminescence</i> 131, no. 11 (2011): 2400–2403. <a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">https://doi.org/10.1016/j.jlumin.2011.05.035</a>.","ieee":"M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure,” <i>Journal of Luminescence</i>, vol. 131, no. 11, pp. 2400–2403, 2011.","apa":"Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., &#38; Schweizer, S. (2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. <i>Journal of Luminescence</i>, <i>131</i>(11), 2400–2403. <a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">https://doi.org/10.1016/j.jlumin.2011.05.035</a>","mla":"Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” <i>Journal of Luminescence</i>, vol. 131, no. 11, Elsevier BV, 2011, pp. 2400–03, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2011.05.035\">10.1016/j.jlumin.2011.05.035</a>."},"file_date_updated":"2018-08-27T12:45:30Z","publication_identifier":{"issn":["0022-2313"]},"author":[{"full_name":"Wiegand, Marie Christin","last_name":"Wiegand","first_name":"Marie Christin"},{"full_name":"Sievers, Werner","first_name":"Werner","last_name":"Sievers"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"full_name":"Tröster, Th.","first_name":"Th.","last_name":"Tröster"},{"full_name":"Schweizer, S.","last_name":"Schweizer","first_name":"S."}],"title":"Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure","year":"2011","article_type":"original","intvolume":"       131","publication_status":"published","date_updated":"2022-01-06T07:00:25Z","language":[{"iso":"eng"}],"doi":"10.1016/j.jlumin.2011.05.035","publication":"Journal of Luminescence","issue":"11","abstract":[{"lang":"eng","text":"Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From 5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping. Above 8 GPa the crystalis completely transformed to its high-pressure phase where two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected. It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the (_^5)D_0→(_^7)F_J  (J=0,1,2)   transitions are investigated. Linear shifts of -19cm^(-1)/GPa  for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure range from 0 to 5 GPa."}],"date_created":"2018-08-27T12:44:42Z","file":[{"file_id":"4149","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-27T12:45:30Z","file_name":"Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic pressure.pdf","access_level":"closed","file_size":279989,"date_created":"2018-08-27T12:45:30Z","creator":"hclaudia"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"creator":"hclaudia","date_created":"2018-08-27T13:18:53Z","relation":"main_file","date_updated":"2018-08-27T13:18:53Z","file_name":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon.pdf","file_size":1541698,"access_level":"closed","file_id":"4151","success":1,"content_type":"application/pdf"}],"date_created":"2018-08-27T13:17:45Z","abstract":[{"text":"Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and\r\nfirst-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation process are calculated in feasible systems of small\r\nsize. The migration mechanism of a carbon \u0002100\u0003 interstitial and silicon \u000211 0\u0003 self-interstitial in otherwise\r\ndefect-free silicon are investigated using density functional theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated systematically. Interactions of various combinations of defects have been characterized including a\r\ncouple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend\r\nto agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range\r\ncapture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A\r\nrather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to\r\nexperimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects\r\nand carbon diffusion in silicon are compared to results of classical potential simulations revealing significant\r\nlimitations of the latter method. An approach to work around this problem is proposed. Finally, results of the\r\nclassical potential molecular dynamics simulations of large systems are examined, which reinforce previous\r\nassumptions and give further insight into basic processes involved in the silicon carbide transition.","lang":"eng"}],"publication":"Physical Review B","issue":"6","doi":"10.1103/physrevb.84.064126","article_number":"064126","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:26Z","publication_status":"published","intvolume":"        84","article_type":"original","title":"Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon","year":"2011","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."},{"last_name":"Nordlund","first_name":"K.","full_name":"Nordlund, K."},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"full_name":"Schmidt, W. G.","first_name":"W. G.","last_name":"Schmidt"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."}],"file_date_updated":"2018-08-27T13:18:53Z","citation":{"ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6064126}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }","mla":"Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>.","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011."},"ddc":["530"],"user_id":"55706","volume":84,"publisher":"American Physical Society (APS)","_id":"4150","has_accepted_license":"1","status":"public"}]