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In: ; 2018.","bibtex":"@inproceedings{Lindner_2018, title={Nanoscale materials and interface design by self-organization}, author={Lindner, Jörg}, year={2018} }","short":"J. Lindner, in: 2018.","mla":"Lindner, Jörg. <i>Nanoscale Materials and Interface Design by Self-Organization</i>. 2018.","apa":"Lindner, J. (2018). Nanoscale materials and interface design by self-organization. Presented at the Festkörpertag des Zentrums für Festkörperchemie und Neue Materialien, Universität Hannover."}},{"language":[{"iso":"eng"}],"_id":"3950","user_id":"55706","department":[{"_id":"286"},{"_id":"15"}],"editor":[{"full_name":"Nanai, L.","last_name":"Nanai","first_name":"L."}],"abstract":[{"lang":"eng","text":"In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic \r\ncircuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three \r\ndimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers"}],"status":"public","type":"book_chapter","publication":"Nanoscaled Films and Layers","title":"Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates","doi":"10.5772/67572","date_updated":"2022-01-06T06:59:59Z","publisher":"InTech","author":[{"last_name":"Riedl","full_name":"Riedl, Thomas","id":"36950","first_name":"Thomas"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}],"date_created":"2018-08-20T13:09:20Z","year":"2017","citation":{"apa":"Riedl, T., &#38; Lindner, J. (2017). Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates. In L. Nanai (Ed.), <i>Nanoscaled Films and Layers</i>. InTech. <a href=\"https://doi.org/10.5772/67572\">https://doi.org/10.5772/67572</a>","mla":"Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates.” <i>Nanoscaled Films and Layers</i>, edited by L. Nanai, InTech, 2017, doi:<a href=\"https://doi.org/10.5772/67572\">10.5772/67572</a>.","bibtex":"@inbook{Riedl_Lindner_2017, title={Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}, DOI={<a href=\"https://doi.org/10.5772/67572\">10.5772/67572</a>}, booktitle={Nanoscaled Films and Layers}, publisher={InTech}, author={Riedl, Thomas and Lindner, Jörg}, editor={Nanai, L.Editor}, year={2017} }","short":"T. Riedl, J. Lindner, in: L. Nanai (Ed.), Nanoscaled Films and Layers, InTech, 2017.","ieee":"T. Riedl and J. Lindner, “Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates,” in <i>Nanoscaled Films and Layers</i>, L. Nanai, Ed. 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Lindner, “Evolution of the opening size of nanosphere lithography masks during thermal annealing.” 2017.","ama":"Riedl T, Kunnathully V, Lindner J. Evolution of the opening size of nanosphere lithography masks during thermal annealing. 2017.","bibtex":"@article{Riedl_Kunnathully_Lindner_2017, series={poster V.14.72}, title={Evolution of the opening size of nanosphere lithography masks during thermal annealing}, author={Riedl, Thomas and Kunnathully, Vinay and Lindner, Jörg}, year={2017}, collection={poster V.14.72} }","mla":"Riedl, Thomas, et al. <i>Evolution of the Opening Size of Nanosphere Lithography Masks during Thermal Annealing</i>. 2017.","short":"T. Riedl, V. Kunnathully, J. Lindner, (2017).","apa":"Riedl, T., Kunnathully, V., &#38; Lindner, J. (2017). Evolution of the opening size of nanosphere lithography masks during thermal annealing. Presented at the E-MRS Spring Meeting 2017, Straßburg (France)."},"year":"2017","conference":{"end_date":"2017-05-26","location":"Straßburg (France)","name":"E-MRS Spring Meeting 2017","start_date":"2017-05-22"},"title":"Evolution of the opening size of nanosphere lithography masks during thermal annealing","author":[{"full_name":"Riedl, Thomas","id":"36950","last_name":"Riedl","first_name":"Thomas"},{"last_name":"Kunnathully","full_name":"Kunnathully, Vinay","first_name":"Vinay"},{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"}],"date_created":"2018-08-21T11:44:47Z","date_updated":"2022-01-06T07:00:05Z","status":"public","type":"conference","language":[{"iso":"eng"}],"user_id":"55706","series_title":"poster V.14.72","department":[{"_id":"286"},{"_id":"15"}],"_id":"3991"},{"_id":"3992","department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706","status":"public","publication":"ACS Applied Materials & Interfaces","type":"journal_article","title":"Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence","doi":"10.1021/acsami.6b15824","publisher":"American Chemical Society (ACS)","date_updated":"2022-01-06T07:00:05Z","volume":9,"date_created":"2018-08-21T11:45:23Z","author":[{"last_name":"Rieger","full_name":"Rieger, Torsten","first_name":"Torsten"},{"first_name":"Thomas","last_name":"Riedl","id":"36950","full_name":"Riedl, Thomas"},{"last_name":"Neumann","full_name":"Neumann, Elmar","first_name":"Elmar"},{"first_name":"Detlev","last_name":"Grützmacher","full_name":"Grützmacher, Detlev"},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"Alexander","full_name":"Pawlis, Alexander","last_name":"Pawlis"}],"year":"2017","page":"8371-8377","intvolume":"         9","citation":{"mla":"Rieger, Torsten, et al. “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.” <i>ACS Applied Materials &#38; Interfaces</i>, vol. 9, no. 9, American Chemical Society (ACS), 2017, pp. 8371–77, doi:<a href=\"https://doi.org/10.1021/acsami.6b15824\">10.1021/acsami.6b15824</a>.","bibtex":"@article{Rieger_Riedl_Neumann_Grützmacher_Lindner_Pawlis_2017, title={Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence}, volume={9}, DOI={<a href=\"https://doi.org/10.1021/acsami.6b15824\">10.1021/acsami.6b15824</a>}, number={9}, journal={ACS Applied Materials &#38; Interfaces}, publisher={American Chemical Society (ACS)}, author={Rieger, Torsten and Riedl, Thomas and Neumann, Elmar and Grützmacher, Detlev and Lindner, Jörg and Pawlis, Alexander}, year={2017}, pages={8371–8377} }","short":"T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, A. Pawlis, ACS Applied Materials &#38; Interfaces 9 (2017) 8371–8377.","apa":"Rieger, T., Riedl, T., Neumann, E., Grützmacher, D., Lindner, J., &#38; Pawlis, A. (2017). Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence. <i>ACS Applied Materials &#38; Interfaces</i>, <i>9</i>(9), 8371–8377. <a href=\"https://doi.org/10.1021/acsami.6b15824\">https://doi.org/10.1021/acsami.6b15824</a>","ama":"Rieger T, Riedl T, Neumann E, Grützmacher D, Lindner J, Pawlis A. Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence. <i>ACS Applied Materials &#38; Interfaces</i>. 2017;9(9):8371-8377. doi:<a href=\"https://doi.org/10.1021/acsami.6b15824\">10.1021/acsami.6b15824</a>","chicago":"Rieger, Torsten, Thomas Riedl, Elmar Neumann, Detlev Grützmacher, Jörg Lindner, and Alexander Pawlis. “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.” <i>ACS Applied Materials &#38; Interfaces</i> 9, no. 9 (2017): 8371–77. <a href=\"https://doi.org/10.1021/acsami.6b15824\">https://doi.org/10.1021/acsami.6b15824</a>.","ieee":"T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, and A. Pawlis, “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence,” <i>ACS Applied Materials &#38; Interfaces</i>, vol. 9, no. 9, pp. 8371–8377, 2017."},"publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","issue":"9"},{"year":"2017","citation":{"ama":"Lindner J, Riedl T. Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces. In: ; 2017.","chicago":"Lindner, Jörg, and Thomas Riedl. “Strain Effects on the Heteroepitaxy of III-V Compound Semiconductors on Nanopatterned Surfaces,” 2017.","ieee":"J. Lindner and T. Riedl, “Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces,” presented at the E-MRS Fall Meeting 2017, Warsaw ( Poland), 2017.","apa":"Lindner, J., &#38; Riedl, T. (2017). Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces. Presented at the E-MRS Fall Meeting 2017, Warsaw ( Poland).","mla":"Lindner, Jörg, and Thomas Riedl. <i>Strain Effects on the Heteroepitaxy of III-V Compound Semiconductors on Nanopatterned Surfaces</i>. 2017.","bibtex":"@inproceedings{Lindner_Riedl_2017, title={Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces}, author={Lindner, Jörg and Riedl, Thomas}, year={2017} }","short":"J. Lindner, T. Riedl, in: 2017."},"title":"Strain effects on the heteroepitaxy of III-V compound semiconductors on nanopatterned surfaces","conference":{"location":"Warsaw ( Poland)","end_date":"2017-09-21","start_date":"2017-09-18","name":"E-MRS Fall Meeting 2017"},"date_updated":"2022-01-06T07:00:06Z","author":[{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"},{"first_name":"Thomas","last_name":"Riedl","full_name":"Riedl, Thomas","id":"36950"}],"date_created":"2018-08-21T12:06:17Z","status":"public","type":"conference","language":[{"iso":"eng"}],"_id":"3999","department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706"},{"author":[{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"}],"date_created":"2018-08-21T12:07:53Z","date_updated":"2022-01-06T07:00:06Z","conference":{"end_date":"2017-09-22","location":"Dresden (Germany)","name":"International Workshop on Inelastic Ion-Surface Collisions","start_date":"2017-09-17"},"title":"Ion Beam Modification of Self-Organized Nanostructures","citation":{"mla":"Lindner, Jörg. <i>Ion Beam Modification of Self-Organized Nanostructures</i>. 2017.","short":"J. Lindner, in: 2017.","bibtex":"@inproceedings{Lindner_2017, title={Ion Beam Modification of Self-Organized Nanostructures}, author={Lindner, Jörg}, year={2017} }","apa":"Lindner, J. (2017). Ion Beam Modification of Self-Organized Nanostructures. Presented at the International Workshop on Inelastic Ion-Surface Collisions, Dresden (Germany).","chicago":"Lindner, Jörg. “Ion Beam Modification of Self-Organized Nanostructures,” 2017.","ieee":"J. Lindner, “Ion Beam Modification of Self-Organized Nanostructures,” presented at the International Workshop on Inelastic Ion-Surface Collisions, Dresden (Germany), 2017.","ama":"Lindner J. Ion Beam Modification of Self-Organized Nanostructures. In: ; 2017."},"year":"2017","department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706","_id":"4000","language":[{"iso":"eng"}],"type":"conference","status":"public"},{"status":"public","type":"conference","language":[{"iso":"eng"}],"_id":"4001","user_id":"55706","department":[{"_id":"286"},{"_id":"15"}],"year":"2017","citation":{"ieee":"K. Brassat, A. Keller, G. Grundmeier, W. Bremser, O. Strube, and J. Lindner, “Bioinspired material design by hierarchical self-assembly on prepatterned surfaces ,” presented at the E-MRS Spring Meeting 2017, Straßbourg (France), 2017.","chicago":"Brassat, Katharina, A. Keller, G.  Grundmeier, W. Bremser, O. Strube, and Jörg Lindner. “Bioinspired Material Design by Hierarchical Self-Assembly on Prepatterned Surfaces ,” 2017.","ama":"Brassat K, Keller A, Grundmeier G, Bremser W, Strube O, Lindner J. Bioinspired material design by hierarchical self-assembly on prepatterned surfaces . In: ; 2017.","apa":"Brassat, K., Keller, A., Grundmeier, G., Bremser, W., Strube, O., &#38; Lindner, J. (2017). Bioinspired material design by hierarchical self-assembly on prepatterned surfaces . Presented at the E-MRS Spring Meeting 2017, Straßbourg (France).","bibtex":"@inproceedings{Brassat_Keller_Grundmeier_Bremser_Strube_Lindner_2017, title={Bioinspired material design by hierarchical self-assembly on prepatterned surfaces }, author={Brassat, Katharina and Keller, A. and Grundmeier, G.  and Bremser, W. and Strube, O. and Lindner, Jörg}, year={2017} }","short":"K. Brassat, A. Keller, G. Grundmeier, W. Bremser, O. Strube, J. Lindner, in: 2017.","mla":"Brassat, Katharina, et al. <i>Bioinspired Material Design by Hierarchical Self-Assembly on Prepatterned Surfaces </i>. 2017."},"title":"Bioinspired material design by hierarchical self-assembly on prepatterned surfaces ","conference":{"end_date":"2017-05-26","location":"Straßbourg (France)","name":"E-MRS Spring Meeting 2017","start_date":"2017-05-22"},"date_updated":"2022-01-06T07:00:06Z","date_created":"2018-08-21T12:10:02Z","author":[{"id":"11305","full_name":"Brassat, Katharina","last_name":"Brassat","first_name":"Katharina"},{"first_name":"A.","full_name":"Keller, A.","last_name":"Keller"},{"first_name":"G. ","full_name":"Grundmeier, G. ","last_name":"Grundmeier"},{"first_name":"W.","full_name":"Bremser, W.","last_name":"Bremser"},{"first_name":"O.","full_name":"Strube, O.","last_name":"Strube"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}]},{"conference":{"start_date":"2017-03-09","name":"BraMat 2017","location":"Brasov (Romania)","end_date":"2017-03-11"},"title":"Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both","date_created":"2018-08-21T12:13:19Z","author":[{"first_name":"Katharina","full_name":"Brassat, Katharina","id":"11305","last_name":"Brassat"},{"full_name":"Brodehl, Christoph","id":"30380","last_name":"Brodehl","first_name":"Christoph"},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"}],"date_updated":"2022-01-06T07:00:06Z","citation":{"ama":"Brassat K, Brodehl C, Lindner J. Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both. In: ; 2017.","chicago":"Brassat, Katharina, Christoph Brodehl, and Jörg Lindner. “Regular Surface Nanopatterning with Nanosphere Lithography, Block Copolymer Lithography and Cominations of Both,” 2017.","ieee":"K. Brassat, C. Brodehl, and J. Lindner, “Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both,” presented at the BraMat 2017, Brasov (Romania), 2017.","bibtex":"@inproceedings{Brassat_Brodehl_Lindner_2017, title={Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both}, author={Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}, year={2017} }","mla":"Brassat, Katharina, et al. <i>Regular Surface Nanopatterning with Nanosphere Lithography, Block Copolymer Lithography and Cominations of Both</i>. 2017.","short":"K. Brassat, C. Brodehl, J. Lindner, in: 2017.","apa":"Brassat, K., Brodehl, C., &#38; Lindner, J. (2017). Regular surface nanopatterning with nanosphere lithography, block copolymer lithography and cominations of both. Presented at the BraMat 2017, Brasov (Romania)."},"year":"2017","language":[{"iso":"eng"}],"department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706","_id":"4003","status":"public","type":"conference"},{"doi":"10.1364/OE.25.022607","volume":25,"author":[{"full_name":"Wahle, M.","last_name":"Wahle","first_name":"M."},{"id":"11305","full_name":"Brassat, Katharina","last_name":"Brassat","first_name":"Katharina"},{"last_name":"Ebel","full_name":"Ebel, J.","first_name":"J."},{"last_name":"Bürger","full_name":"Bürger, Julius","id":"46952","first_name":"Julius"},{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"},{"last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254","first_name":"Heinz-Siegfried"}],"date_updated":"2023-01-10T13:16:11Z","intvolume":"        25","page":"22608-22619","citation":{"mla":"Wahle, M., et al. “Two-Dimensional Switchable Blue Phase Gratings Manufactured by Nanosphere Lithography.” <i>Optics Express 25</i>, vol. 25, no. 19, 2017, pp. 22608–19, doi:<a href=\"https://doi.org/10.1364/OE.25.022607\">10.1364/OE.25.022607</a>.","short":"M. Wahle, K. Brassat, J. Ebel, J. Bürger, J. Lindner, H.-S. Kitzerow, Optics Express 25 25 (2017) 22608–22619.","bibtex":"@article{Wahle_Brassat_Ebel_Bürger_Lindner_Kitzerow_2017, title={Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography}, volume={25}, DOI={<a href=\"https://doi.org/10.1364/OE.25.022607\">10.1364/OE.25.022607</a>}, number={19}, journal={Optics Express 25}, author={Wahle, M. and Brassat, Katharina and Ebel, J. and Bürger, Julius and Lindner, Jörg and Kitzerow, Heinz-Siegfried}, year={2017}, pages={22608–22619} }","apa":"Wahle, M., Brassat, K., Ebel, J., Bürger, J., Lindner, J., &#38; Kitzerow, H.-S. (2017). Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography. <i>Optics Express 25</i>, <i>25</i>(19), 22608–22619. <a href=\"https://doi.org/10.1364/OE.25.022607\">https://doi.org/10.1364/OE.25.022607</a>","ieee":"M. Wahle, K. Brassat, J. Ebel, J. Bürger, J. Lindner, and H.-S. Kitzerow, “Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography,” <i>Optics Express 25</i>, vol. 25, no. 19, pp. 22608–22619, 2017, doi: <a href=\"https://doi.org/10.1364/OE.25.022607\">10.1364/OE.25.022607</a>.","chicago":"Wahle, M., Katharina Brassat, J. Ebel, Julius Bürger, Jörg Lindner, and Heinz-Siegfried Kitzerow. “Two-Dimensional Switchable Blue Phase Gratings Manufactured by Nanosphere Lithography.” <i>Optics Express 25</i> 25, no. 19 (2017): 22608–19. <a href=\"https://doi.org/10.1364/OE.25.022607\">https://doi.org/10.1364/OE.25.022607</a>.","ama":"Wahle M, Brassat K, Ebel J, Bürger J, Lindner J, Kitzerow H-S. Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography. <i>Optics Express 25</i>. 2017;25(19):22608-22619. doi:<a href=\"https://doi.org/10.1364/OE.25.022607\">10.1364/OE.25.022607</a>"},"has_accepted_license":"1","publication_status":"published","file_date_updated":"2018-08-21T12:02:06Z","article_type":"original","department":[{"_id":"2"},{"_id":"286"},{"_id":"230"},{"_id":"15"},{"_id":"313"}],"user_id":"14931","_id":"3997","status":"public","type":"journal_article","title":"Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography","date_created":"2018-08-21T12:04:28Z","year":"2017","issue":"19","language":[{"iso":"eng"}],"ddc":["530"],"file":[{"file_size":4327427,"file_id":"3998","file_name":"Two-dimensional switchable blue phase gratings manufactured by nanosphere lithography.pdf","access_level":"closed","date_updated":"2018-08-21T12:02:06Z","date_created":"2018-08-21T12:02:06Z","creator":"hclaudia","success":1,"relation":"main_file","content_type":"application/pdf"}],"abstract":[{"text":"Switchable two dimensional liquid crystal diffraction gratings are promising can-\r\ndidates in beam steering devices, multiplexers and holographic displays. For these areas of applications a high degree of integration in optical systems is much sought-after. In the context of diffraction gratings this means that the angle of diffraction should be rather high, which typically poses a problem as the fabrication of small grating periods is challenging. In this paper, we propose the use of nanosphere lithography (NSL) for the fabrication of two-dimensionally\r\nstructured electrodes with a periodicity of a few micrometers. NSL is based on the self-assembly of micro- or nanometer sized spheres into monolayers. It allows for easy substrate structuring on wafer scale. The manufactured electrode is combined with a liquid crystalline polymer-stabilized blue phase, which facilitates sub-millisecond electrical switching of the diffraction efficiency at adiffractionangle of 21.4°.","lang":"eng"}],"publication":"Optics Express 25"},{"_id":"4002","user_id":"254","department":[{"_id":"286"},{"_id":"15"},{"_id":"313"},{"_id":"230"}],"language":[{"iso":"eng"}],"type":"conference","status":"public","date_updated":"2023-01-24T17:21:44Z","date_created":"2018-08-21T12:11:46Z","author":[{"last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254","first_name":"Heinz-Siegfried"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}],"title":"Plasmonic nanostructures: spectroscopy and electron microscopy","conference":{"end_date":"2017-03-24","location":"Barcelona (Spain)","name":"Europhotonics Spring School 2017","start_date":"2017-03-21"},"year":"2017","citation":{"apa":"Kitzerow, H.-S., &#38; Lindner, J. (2017). <i>Plasmonic nanostructures: spectroscopy and electron microscopy</i>. Europhotonics Spring School 2017, Barcelona (Spain).","mla":"Kitzerow, Heinz-Siegfried, and Jörg Lindner. <i>Plasmonic Nanostructures: Spectroscopy and Electron Microscopy</i>. 2017.","bibtex":"@inproceedings{Kitzerow_Lindner_2017, title={Plasmonic nanostructures: spectroscopy and electron microscopy}, author={Kitzerow, Heinz-Siegfried and Lindner, Jörg}, year={2017} }","short":"H.-S. Kitzerow, J. Lindner, in: 2017.","ama":"Kitzerow H-S, Lindner J. Plasmonic nanostructures: spectroscopy and electron microscopy. In: ; 2017.","ieee":"H.-S. Kitzerow and J. Lindner, “Plasmonic nanostructures: spectroscopy and electron microscopy,” presented at the Europhotonics Spring School 2017, Barcelona (Spain), 2017.","chicago":"Kitzerow, Heinz-Siegfried, and Jörg Lindner. “Plasmonic Nanostructures: Spectroscopy and Electron Microscopy,” 2017."}},{"doi":"10.1016/j.mee.2016.12.018","date_updated":"2022-01-06T07:00:00Z","volume":174,"author":[{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"full_name":"Vidor, Fábio F.","last_name":"Vidor","first_name":"Fábio F."},{"first_name":"Katharina","full_name":"Brassat, Katharina","id":"11305","last_name":"Brassat"},{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"intvolume":"       174","page":"35-39","citation":{"bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","short":"T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>","ama":"Meyers T, Vidor FF, Brassat K, Lindner J, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>","ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016.","chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>."},"publication_identifier":{"issn":["0167-9317"]},"has_accepted_license":"1","publication_status":"published","article_type":"original","file_date_updated":"2018-08-20T13:35:02Z","_id":"3956","department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706","status":"public","type":"journal_article","title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","publisher":"Elsevier BV","date_created":"2018-08-20T13:33:05Z","year":"2016","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications.\r\nTherefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity\r\nof the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional\r\nphotolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics.\r\nThe impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during\r\nphotolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized.\r\nAdditionally, the implementation of this sacrificial layer can be used for future complementary circuit design."}],"file":[{"access_level":"closed","file_id":"3957","file_name":"Now-voltage DNTT-based thin-film transistors and inverters for flexible electronics.pdf","file_size":758984,"creator":"hclaudia","date_created":"2018-08-20T13:35:02Z","date_updated":"2018-08-20T13:35:02Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"publication":"Microelectronic Engineering"}]