---
_id: '4109'
author:
- first_name: Johannes
full_name: Pauly, Johannes
last_name: Pauly
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Pauly J, Lindner J. Nickel Nanodot Arrays on Silicon formed by Nanosphere
Lithography: A TEM Study. In: ; 2013.'
apa: 'Pauly, J., & Lindner, J. (2013). Nickel Nanodot Arrays on Silicon formed
by Nanosphere Lithography: A TEM Study. Presented at the Frühjahrstagung der Deutschen
Physikalischen Gesellschaft, Regensburg (Germany).'
bibtex: '@inproceedings{Pauly_Lindner_2013, title={Nickel Nanodot Arrays on Silicon
formed by Nanosphere Lithography: A TEM Study}, author={Pauly, Johannes and Lindner,
Jörg}, year={2013} }'
chicago: 'Pauly, Johannes, and Jörg Lindner. “Nickel Nanodot Arrays on Silicon Formed
by Nanosphere Lithography: A TEM Study,” 2013.'
ieee: 'J. Pauly and J. Lindner, “Nickel Nanodot Arrays on Silicon formed by Nanosphere
Lithography: A TEM Study,” presented at the Frühjahrstagung der Deutschen Physikalischen
Gesellschaft, Regensburg (Germany), 2013.'
mla: 'Pauly, Johannes, and Jörg Lindner. Nickel Nanodot Arrays on Silicon Formed
by Nanosphere Lithography: A TEM Study. 2013.'
short: 'J. Pauly, J. Lindner, in: 2013.'
conference:
end_date: 2013-03-15
location: Regensburg (Germany)
name: Frühjahrstagung der Deutschen Physikalischen Gesellschaft
start_date: 2013-03-10
date_created: 2018-08-23T13:11:21Z
date_updated: 2022-01-06T07:00:18Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: 'Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study'
type: conference
user_id: '55706'
year: '2013'
...
---
_id: '4110'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Lindner J. Self-organized Fabrication of Periodic Nanocolumn Arrays
on GaAs Surfaces. In: ; 2013.'
apa: Riedl, T., & Lindner, J. (2013). Self-organized Fabrication of Periodic
Nanocolumn Arrays on GaAs Surfaces. Presented at the MRS Fall Meeting 2013, Boston
(USA).
bibtex: '@inproceedings{Riedl_Lindner_2013, title={Self-organized Fabrication of
Periodic Nanocolumn Arrays on GaAs Surfaces}, author={Riedl, Thomas and Lindner,
Jörg}, year={2013} }'
chicago: Riedl, Thomas, and Jörg Lindner. “Self-Organized Fabrication of Periodic
Nanocolumn Arrays on GaAs Surfaces,” 2013.
ieee: T. Riedl and J. Lindner, “Self-organized Fabrication of Periodic Nanocolumn
Arrays on GaAs Surfaces,” presented at the MRS Fall Meeting 2013, Boston (USA),
2013.
mla: Riedl, Thomas, and Jörg Lindner. Self-Organized Fabrication of Periodic
Nanocolumn Arrays on GaAs Surfaces. 2013.
short: 'T. Riedl, J. Lindner, in: 2013.'
conference:
end_date: 2013-12-06
location: Boston (USA)
name: MRS Fall Meeting 2013
start_date: 2013-12-01
date_created: 2018-08-23T13:12:46Z
date_updated: 2022-01-06T07:00:18Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces
type: conference
user_id: '55706'
year: '2013'
...
---
_id: '4111'
abstract:
- lang: eng
text: "In this article we study the elemental distribution and solute solubility
in nanocrystalline alloys of immiscible components near restricted equilibrium
for the case of the binary Cu–Ag system. As predicted from thermodynamic considerations,
a grain boundary segregated monophase alloy is observed in the annealed mechanically
alloyed state for low Ag content by using atom probe tomography. From the detected
Ag solute grain boundary enrichment the\r\nsegregation free enthalpy is estimated
to range between -25 and -49 kJ mol^-1 following the McLean equation, in agreement
with values reported for coarse-grained Cu–Ag. The extension of the alloying range
is described by a two-domain thermodynamic model that considers the excess free
volume in the grain boundaries and the strain in the strain interior on the basis
of the universal equation of state at negative pressure. To access the grain boundary
volumetric strain experimentally, a method based on a combination of density measurements
and microscopical quantification of closed pore areas is presented. Moreover,
we apply x-ray diffraction line broadening analysis to determine the local strain
amplitude, which yields a root-mean-square microstrain of \x180.3% for a grain
size of \x1830 nm. It is shown that the grain boundary free volume represents
the major origin for the global solubility enhancement in\r\nnanocrystalline Cu–Ag
at 503 K."
article_number: 115401 (9 pp.)
article_type: original
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: A
full_name: Kirchner, A
last_name: Kirchner
- first_name: K
full_name: Eymann, K
last_name: Eymann
- first_name: A
full_name: Shariq, A
last_name: Shariq
- first_name: R
full_name: Schlesiger, R
last_name: Schlesiger
- first_name: G
full_name: Schmitz, G
last_name: Schmitz
- first_name: M
full_name: Ruhnow, M
last_name: Ruhnow
- first_name: B
full_name: Kieback, B
last_name: Kieback
citation:
ama: 'Riedl T, Kirchner A, Eymann K, et al. Elemental distribution, solute solubility
and defect free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys.
Journal of Physics: Condensed Matter. 2013;25(11). doi:10.1088/0953-8984/25/11/115401'
apa: 'Riedl, T., Kirchner, A., Eymann, K., Shariq, A., Schlesiger, R., Schmitz,
G., … Kieback, B. (2013). Elemental distribution, solute solubility and defect
free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys. Journal
of Physics: Condensed Matter, 25(11). https://doi.org/10.1088/0953-8984/25/11/115401'
bibtex: '@article{Riedl_Kirchner_Eymann_Shariq_Schlesiger_Schmitz_Ruhnow_Kieback_2013,
title={Elemental distribution, solute solubility and defect free volume in nanocrystalline
restricted-equilibrium Cu–Ag alloys}, volume={25}, DOI={10.1088/0953-8984/25/11/115401},
number={11115401 (9 pp.)}, journal={Journal of Physics: Condensed Matter}, publisher={IOP
Publishing}, author={Riedl, Thomas and Kirchner, A and Eymann, K and Shariq, A
and Schlesiger, R and Schmitz, G and Ruhnow, M and Kieback, B}, year={2013} }'
chicago: 'Riedl, Thomas, A Kirchner, K Eymann, A Shariq, R Schlesiger, G Schmitz,
M Ruhnow, and B Kieback. “Elemental Distribution, Solute Solubility and Defect
Free Volume in Nanocrystalline Restricted-Equilibrium Cu–Ag Alloys.” Journal
of Physics: Condensed Matter 25, no. 11 (2013). https://doi.org/10.1088/0953-8984/25/11/115401.'
ieee: 'T. Riedl et al., “Elemental distribution, solute solubility and defect
free volume in nanocrystalline restricted-equilibrium Cu–Ag alloys,” Journal
of Physics: Condensed Matter, vol. 25, no. 11, 2013.'
mla: 'Riedl, Thomas, et al. “Elemental Distribution, Solute Solubility and Defect
Free Volume in Nanocrystalline Restricted-Equilibrium Cu–Ag Alloys.” Journal
of Physics: Condensed Matter, vol. 25, no. 11, 115401 (9 pp.), IOP Publishing,
2013, doi:10.1088/0953-8984/25/11/115401.'
short: 'T. Riedl, A. Kirchner, K. Eymann, A. Shariq, R. Schlesiger, G. Schmitz,
M. Ruhnow, B. Kieback, Journal of Physics: Condensed Matter 25 (2013).'
date_created: 2018-08-23T13:18:34Z
date_updated: 2022-01-06T07:00:18Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1088/0953-8984/25/11/115401
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T13:21:21Z
date_updated: 2018-08-23T13:21:21Z
file_id: '4112'
file_name: Elemental distribution, solute solubility and defect free volume in nanocrystalline
restricted-equilibrium Cu-Ag alloys.pdf
file_size: 1116530
relation: main_file
success: 1
file_date_updated: 2018-08-23T13:21:21Z
has_accepted_license: '1'
intvolume: ' 25'
issue: '11'
language:
- iso: eng
publication: 'Journal of Physics: Condensed Matter'
publication_identifier:
issn:
- 0953-8984
- 1361-648X
publication_status: published
publisher: IOP Publishing
status: public
title: Elemental distribution, solute solubility and defect free volume in nanocrystalline
restricted-equilibrium Cu–Ag alloys
type: journal_article
user_id: '55706'
volume: 25
year: '2013'
...
---
_id: '4113'
author:
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: 'Lindner J. Ion Interactions with Nanopatterned Surfaces. In: ; 2013.'
apa: Lindner, J. (2013). Ion Interactions with Nanopatterned Surfaces. Presented
at the 18th International Conference on Surface Modification of Materials by Ion
Beams, Kusadasi (Turkey).
bibtex: '@inproceedings{Lindner_2013, title={Ion Interactions with Nanopatterned
Surfaces}, author={Lindner, Jörg}, year={2013} }'
chicago: Lindner, Jörg. “Ion Interactions with Nanopatterned Surfaces,” 2013.
ieee: J. Lindner, “Ion Interactions with Nanopatterned Surfaces,” presented at the
18th International Conference on Surface Modification of Materials by Ion Beams,
Kusadasi (Turkey), 2013.
mla: Lindner, Jörg. Ion Interactions with Nanopatterned Surfaces. 2013.
short: 'J. Lindner, in: 2013.'
conference:
end_date: 2013-09-20
location: Kusadasi (Turkey)
name: 18th International Conference on Surface Modification of Materials by Ion
Beams
start_date: 2013-09-15
date_created: 2018-08-23T13:25:02Z
date_updated: 2022-01-06T07:00:18Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: Ion Interactions with Nanopatterned Surfaces
type: conference
user_id: '55706'
year: '2013'
...
---
_id: '4095'
abstract:
- lang: eng
text: "Aiming to diminish the reflection losses of glass covered light harvesting
devices, the optical reflectivity\r\nof nanostructured glass surfaces is studied
theoretically and experimentally. The work is inspired by\r\nthe nanoscale roughness
of insect eyes, which is tried to be replicated on a technical glass surface.
To\r\nthis end, the reflectivity of glass surfaces with topographies represented
by linear, parabolic and Fermishaped\r\nglass/air fill factor profiles is calculated
for normal incidence. It is shown that using the latter ones,\r\nan almost complete
suppression of reflections can be achieved. A simple, self-organization technique
to\r\ncreate such Fermi-shaped filling factor profiles in glass experimentally
is also presented."
article_type: original
author:
- first_name: J.
full_name: Achtelik, J.
last_name: Achtelik
- first_name: W.
full_name: Sievers, W.
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Achtelik J, Sievers W, Lindner J. Biomimetic approaches to create anti-reflection
glass surfaces for solar cells using self-organizing techniques. Materials
Science and Engineering: B. 2012;178(9):635-638. doi:10.1016/j.mseb.2012.10.014'
apa: 'Achtelik, J., Sievers, W., & Lindner, J. (2012). Biomimetic approaches
to create anti-reflection glass surfaces for solar cells using self-organizing
techniques. Materials Science and Engineering: B, 178(9), 635–638.
https://doi.org/10.1016/j.mseb.2012.10.014'
bibtex: '@article{Achtelik_Sievers_Lindner_2012, title={Biomimetic approaches to
create anti-reflection glass surfaces for solar cells using self-organizing techniques},
volume={178}, DOI={10.1016/j.mseb.2012.10.014},
number={9}, journal={Materials Science and Engineering: B}, publisher={Elsevier
BV}, author={Achtelik, J. and Sievers, W. and Lindner, Jörg}, year={2012}, pages={635–638}
}'
chicago: 'Achtelik, J., W. Sievers, and Jörg Lindner. “Biomimetic Approaches to
Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.”
Materials Science and Engineering: B 178, no. 9 (2012): 635–38. https://doi.org/10.1016/j.mseb.2012.10.014.'
ieee: 'J. Achtelik, W. Sievers, and J. Lindner, “Biomimetic approaches to create
anti-reflection glass surfaces for solar cells using self-organizing techniques,”
Materials Science and Engineering: B, vol. 178, no. 9, pp. 635–638, 2012.'
mla: 'Achtelik, J., et al. “Biomimetic Approaches to Create Anti-Reflection Glass
Surfaces for Solar Cells Using Self-Organizing Techniques.” Materials Science
and Engineering: B, vol. 178, no. 9, Elsevier BV, 2012, pp. 635–38, doi:10.1016/j.mseb.2012.10.014.'
short: 'J. Achtelik, W. Sievers, J. Lindner, Materials Science and Engineering:
B 178 (2012) 635–638.'
conference:
end_date: 2012-05-18
location: Straßburg (France)
name: European Materials Research Society Spring Meeting 2012
start_date: 2012-05-14
date_created: 2018-08-23T12:37:40Z
date_updated: 2022-01-06T07:00:16Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '230'
doi: 10.1016/j.mseb.2012.10.014
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T12:39:27Z
date_updated: 2018-08-23T12:39:27Z
file_id: '4096'
file_name: Biomimetic approaches to create anti-reflection glass surfaces for solar
cells using self-organizing techniques.pdf
file_size: 729276
relation: main_file
success: 1
file_date_updated: 2018-08-23T12:39:27Z
has_accepted_license: '1'
intvolume: ' 178'
issue: '9'
language:
- iso: eng
page: 635-638
publication: 'Materials Science and Engineering: B'
publication_identifier:
issn:
- 0921-5107
publication_status: published
publisher: Elsevier BV
status: public
title: Biomimetic approaches to create anti-reflection glass surfaces for solar cells
using self-organizing techniques
type: journal_article
user_id: '55706'
volume: 178
year: '2012'
...
---
_id: '4114'
abstract:
- lang: eng
text: Two methods to create biomimetic anti-reflection nanostructures in ordinary
glass microscope object slides are presented. One technique is based on a nanosphere
lithography process combined with physical vapour deposition of nickel and reactive
ion etching (RIE). The other uses plasma induced dewetting of a smooth nickel
surface. The amount of reflected light was measured and a method to simulate the
reflectivity from an atomic force microscopy (AFM) topography scan of the glass
surface is presented. The reflectivity for visible light at normal incidence was
reduced to 20-50 % of the original value with both methods and the simulation
gives results in good agreement to the measurement.
article_type: original
author:
- first_name: Jörn
full_name: Achtelik, Jörn
last_name: Achtelik
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Werner
full_name: Sievers, Werner
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: Achtelik J, Kemper RM, Sievers W, Lindner J. Self-Organized Nanostructure Formation
for Anti-Reflection Glass Surfaces. MRS Proceedings. 2012;1389. doi:10.1557/opl.2012.491
apa: Achtelik, J., Kemper, R. M., Sievers, W., & Lindner, J. (2012). Self-Organized
Nanostructure Formation for Anti-Reflection Glass Surfaces. MRS Proceedings,
1389. https://doi.org/10.1557/opl.2012.491
bibtex: '@article{Achtelik_Kemper_Sievers_Lindner_2012, title={Self-Organized Nanostructure
Formation for Anti-Reflection Glass Surfaces}, volume={1389}, DOI={10.1557/opl.2012.491},
journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Achtelik,
Jörn and Kemper, Ricarda M. and Sievers, Werner and Lindner, Jörg}, year={2012}
}'
chicago: Achtelik, Jörn, Ricarda M. Kemper, Werner Sievers, and Jörg Lindner. “Self-Organized
Nanostructure Formation for Anti-Reflection Glass Surfaces.” MRS Proceedings
1389 (2012). https://doi.org/10.1557/opl.2012.491.
ieee: J. Achtelik, R. M. Kemper, W. Sievers, and J. Lindner, “Self-Organized Nanostructure
Formation for Anti-Reflection Glass Surfaces,” MRS Proceedings, vol. 1389,
2012.
mla: Achtelik, Jörn, et al. “Self-Organized Nanostructure Formation for Anti-Reflection
Glass Surfaces.” MRS Proceedings, vol. 1389, Cambridge University Press
(CUP), 2012, doi:10.1557/opl.2012.491.
short: J. Achtelik, R.M. Kemper, W. Sievers, J. Lindner, MRS Proceedings 1389 (2012).
conference:
end_date: 2011-12-02
location: Boston (USA)
name: MRS Fall Meeting 2011
start_date: 2011-11-28
date_created: 2018-08-23T13:29:50Z
date_updated: 2022-01-06T07:00:18Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/opl.2012.491
intvolume: ' 1389'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces
type: journal_article
user_id: '55706'
volume: 1389
year: '2012'
...
---
_id: '4115'
author:
- first_name: Christoph
full_name: Brodehl, Christoph
id: '30380'
last_name: Brodehl
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Brodehl C, Greulich-Weber S, Lindner J. Gyrotropic Metamaterials. In: ; 2012.'
apa: Brodehl, C., Greulich-Weber, S., & Lindner, J. (2012). Gyrotropic Metamaterials.
Presented at the GRK1464 Convention on Micro- and Nanostructures in Optoelectronics
and Photonics, Paderborn.
bibtex: '@inproceedings{Brodehl_Greulich-Weber_Lindner_2012, title={Gyrotropic Metamaterials},
author={Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}, year={2012}
}'
chicago: Brodehl, Christoph, Siegmund Greulich-Weber, and Jörg Lindner. “Gyrotropic
Metamaterials,” 2012.
ieee: C. Brodehl, S. Greulich-Weber, and J. Lindner, “Gyrotropic Metamaterials,”
presented at the GRK1464 Convention on Micro- and Nanostructures in Optoelectronics
and Photonics, Paderborn, 2012.
mla: Brodehl, Christoph, et al. Gyrotropic Metamaterials. 2012.
short: 'C. Brodehl, S. Greulich-Weber, J. Lindner, in: 2012.'
conference:
end_date: 2012-12-04
location: Paderborn
name: GRK1464 Convention on Micro- and Nanostructures in Optoelectronics and Photonics
start_date: 2012-12-04
date_created: 2018-08-23T13:34:01Z
date_updated: 2022-01-06T07:00:18Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: Gyrotropic Metamaterials
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4131'
abstract:
- lang: eng
text: "We report an anisotropic formation of defects in cubic GaN grown on nano-patterned
3C-SiC/Si (001) by molecular\r\nbeam epitaxy. Nano-patterning of 3C-SiC/Si (001)
is achieved by nanosphere lithography and a reactive\r\nion etching process. Atomic
force microscopy and scanning electron microscopy show that the selectivearea-\r\ngrown
cubic GaN nucleates in two structurally different domains, which most probably
originate from the\r\nsubstrate. In adjacent domains the formation of defects,
especially hexagonal inclusions, is different and leads to\r\ntwo different surface
morphologies. The dominant phase within these domains was measured by electron
backscatter\r\ndiffraction. Optical properties were investigated by micro-photoluminescence
and cathodoluminescence spectroscopy."
article_type: original
author:
- first_name: R. M.
full_name: Kemper, R. M.
last_name: Kemper
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: T.
full_name: Niendorf, T.
last_name: Niendorf
- first_name: H. J.
full_name: Maier, H. J.
last_name: Maier
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown
on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031.
doi:10.1002/pssc.201100174
apa: Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., …
Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001). Physica Status Solidi (C), 9(3–4), 1028–1031. https://doi.org/10.1002/pssc.201100174
bibtex: '@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et
al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC
(001)}, volume={9}, DOI={10.1002/pssc.201100174},
number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M.
and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.},
year={2012}, pages={1028–1031} }'
chicago: 'Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik
Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC
(001).” Physica Status Solidi (C) 9, no. 3–4 (2012): 1028–31. https://doi.org/10.1002/pssc.201100174.'
ieee: R. M. Kemper et al., “Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001),” physica status solidi (c), vol. 9, no. 3–4, pp. 1028–1031,
2012.
mla: Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned
3C-SiC (001).” Physica Status Solidi (C), vol. 9, no. 3–4, Wiley, 2012,
pp. 1028–31, doi:10.1002/pssc.201100174.
short: R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier,
T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi
(C) 9 (2012) 1028–1031.
date_created: 2018-08-27T11:31:07Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '286'
- _id: '287'
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssc.201100174
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T11:35:10Z
date_updated: 2018-08-27T11:35:10Z
file_id: '4132'
file_name: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC 001.pdf
file_size: 848414
relation: main_file
success: 1
file_date_updated: 2018-08-27T11:35:10Z
has_accepted_license: '1'
intvolume: ' 9'
issue: 3-4
language:
- iso: eng
page: 1028-1031
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
type: journal_article
user_id: '20798'
volume: 9
year: '2012'
...
---
_id: '4133'
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: L.
full_name: Hiller, L.
last_name: Hiller
- first_name: T.
full_name: Stauden, T.
last_name: Stauden
- first_name: 'J. '
full_name: 'Pezoldt, J. '
last_name: Pezoldt
- first_name: D.
full_name: Meertens, D.
last_name: Meertens
- first_name: 'M. '
full_name: 'Luysberg, M. '
last_name: Luysberg
- first_name: K.
full_name: Tillmann, K.
last_name: Tillmann
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Donald
full_name: As, Donald
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Kemper RM, Hiller L, Stauden T, et al. TEM investigation of GaN thin films
grown on nanostructured 3C-SiC/Si(001) substrates. In: ; 2012.'
apa: Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., Luysberg,
M., … Lindner, J. (2012). TEM investigation of GaN thin films grown on nanostructured
3C-SiC/Si(001) substrates. Presented at the European Microscopy Congress (EMC)
2012, Manchester (UK).
bibtex: '@inproceedings{Kemper_Hiller_Stauden_Pezoldt_Meertens_Luysberg_Tillmann_Riedl_As_Lindner_2012,
title={TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001)
substrates}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt,
J. and Meertens, D. and Luysberg, M. and Tillmann, K. and Riedl, Thomas and
As, Donald and Lindner, Jörg}, year={2012} }'
chicago: Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg,
K. Tillmann, Thomas Riedl, Donald As, and Jörg Lindner. “TEM Investigation of
GaN Thin Films Grown on Nanostructured 3C-SiC/Si(001) Substrates,” 2012.
ieee: R. M. Kemper et al., “TEM investigation of GaN thin films grown on
nanostructured 3C-SiC/Si(001) substrates,” presented at the European Microscopy
Congress (EMC) 2012, Manchester (UK), 2012.
mla: Kemper, R. M., et al. TEM Investigation of GaN Thin Films Grown on Nanostructured
3C-SiC/Si(001) Substrates. 2012.
short: 'R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg,
K. Tillmann, T. Riedl, D. As, J. Lindner, in: 2012.'
conference:
end_date: 2012-09-21
location: Manchester (UK)
name: European Microscopy Congress (EMC) 2012
start_date: 2012-09-16
date_created: 2018-08-27T12:14:30Z
date_updated: 2022-01-06T07:00:23Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001)
substrates
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4134'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Nanosphere Lithography: State-of-the-art and Future Directions.
In: ; 2012.'
apa: 'Lindner, J. (2012). Nanosphere Lithography: State-of-the-art and Future Directions.
Presented at the E-MRS Fall Meeting 2012, Warsaw (Poland).'
bibtex: '@inproceedings{Lindner_2012, title={Nanosphere Lithography: State-of-the-art
and Future Directions}, author={Lindner, Jörg}, year={2012} }'
chicago: 'Lindner, Jörg. “Nanosphere Lithography: State-of-the-Art and Future Directions,”
2012.'
ieee: 'J. Lindner, “Nanosphere Lithography: State-of-the-art and Future Directions,”
presented at the E-MRS Fall Meeting 2012, Warsaw (Poland), 2012.'
mla: 'Lindner, Jörg. Nanosphere Lithography: State-of-the-Art and Future Directions.
2012.'
short: 'J. Lindner, in: 2012.'
conference:
end_date: 2012-09-21
location: Warsaw (Poland)
name: E-MRS Fall Meeting 2012
start_date: 2012-09-17
date_created: 2018-08-27T12:16:17Z
date_updated: 2022-01-06T07:00:23Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: 'Nanosphere Lithography: State-of-the-art and Future Directions'
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4135'
author:
- first_name: Johannes
full_name: Pauly, Johannes
last_name: Pauly
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Pauly J, Lindner J. TEM Characterization of Nickel Nanodot Arrays on Silicon
formed by Nanosphere Lithography. In: ; 2012.'
apa: Pauly, J., & Lindner, J. (2012). TEM Characterization of Nickel Nanodot
Arrays on Silicon formed by Nanosphere Lithography. Presented at the E-MRS Fall
Meeting 2012, Warsaw (Poland).
bibtex: '@inproceedings{Pauly_Lindner_2012, title={TEM Characterization of Nickel
Nanodot Arrays on Silicon formed by Nanosphere Lithography}, author={Pauly, Johannes
and Lindner, Jörg}, year={2012} }'
chicago: Pauly, Johannes, and Jörg Lindner. “TEM Characterization of Nickel Nanodot
Arrays on Silicon Formed by Nanosphere Lithography,” 2012.
ieee: J. Pauly and J. Lindner, “TEM Characterization of Nickel Nanodot Arrays on
Silicon formed by Nanosphere Lithography,” presented at the E-MRS Fall Meeting
2012, Warsaw (Poland), 2012.
mla: Pauly, Johannes, and Jörg Lindner. TEM Characterization of Nickel Nanodot
Arrays on Silicon Formed by Nanosphere Lithography. 2012.
short: 'J. Pauly, J. Lindner, in: 2012.'
conference:
end_date: 2012-09-21
location: Warsaw (Poland)
name: E-MRS Fall Meeting 2012
start_date: 2012-09-17
date_created: 2018-08-27T12:17:43Z
date_updated: 2022-01-06T07:00:23Z
department:
- _id: '286'
language:
- iso: eng
status: public
title: TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere
Lithography
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4138'
author:
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: 'Lindner J. Nanokugellithographie: Grundlagen und Anwendungen. In: ; 2012.'
apa: 'Lindner, J. (2012). Nanokugellithographie: Grundlagen und Anwendungen. Presented
at the Firmenseminar der Carl Zeiss AG, Oberkochen und Jena (online).'
bibtex: '@inproceedings{Lindner_2012, title={Nanokugellithographie: Grundlagen und
Anwendungen}, author={Lindner, Jörg}, year={2012} }'
chicago: 'Lindner, Jörg. “Nanokugellithographie: Grundlagen Und Anwendungen,” 2012.'
ieee: 'J. Lindner, “Nanokugellithographie: Grundlagen und Anwendungen,” presented
at the Firmenseminar der Carl Zeiss AG, Oberkochen und Jena (online), 2012.'
mla: 'Lindner, Jörg. Nanokugellithographie: Grundlagen Und Anwendungen. 2012.'
short: 'J. Lindner, in: 2012.'
conference:
end_date: 2012-03-26
location: Oberkochen und Jena (online)
name: Firmenseminar der Carl Zeiss AG
start_date: 2012-03-26
date_created: 2018-08-27T12:23:09Z
date_updated: 2022-01-06T07:00:23Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: 'Nanokugellithographie: Grundlagen und Anwendungen'
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4139'
author:
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: 'Lindner J. Nanolithographie von Oberflächen für das Wachstum optoelektronischer
Strukturen. In: ; 2012.'
apa: Lindner, J. (2012). Nanolithographie von Oberflächen für das Wachstum optoelektronischer
Strukturen. Presented at the Kolloquium des Leibniz Instituts für Oberflächenmodifizierung
IOM, Leipzig (Germany).
bibtex: '@inproceedings{Lindner_2012, title={Nanolithographie von Oberflächen für
das Wachstum optoelektronischer Strukturen}, author={Lindner, Jörg}, year={2012}
}'
chicago: Lindner, Jörg. “Nanolithographie von Oberflächen Für Das Wachstum Optoelektronischer
Strukturen,” 2012.
ieee: J. Lindner, “Nanolithographie von Oberflächen für das Wachstum optoelektronischer
Strukturen,” presented at the Kolloquium des Leibniz Instituts für Oberflächenmodifizierung
IOM, Leipzig (Germany), 2012.
mla: Lindner, Jörg. Nanolithographie von Oberflächen Für Das Wachstum Optoelektronischer
Strukturen. 2012.
short: 'J. Lindner, in: 2012.'
conference:
end_date: 2012-07-26
location: Leipzig (Germany)
name: Kolloquium des Leibniz Instituts für Oberflächenmodifizierung IOM
start_date: 2012-07-26
date_created: 2018-08-27T12:24:36Z
date_updated: 2022-01-06T07:00:23Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen
type: conference
user_id: '55706'
year: '2012'
...
---
_id: '4116'
abstract:
- lang: eng
text: "Anisotropic etching processes for mesa structure formation using fluorinated
plasma\r\natmospheres in an electron cyclotron resonance (ECR) plasma etcher were
studied on Novasic\r\nsubstrates with 10 μm thick 3C-SiC(100) grown on Si(100).
To achieve reasonable etching rates, a\r\nspecial gas inlet system suitable for
injecting SF6 into the high density downstream Ar ECR plasma\r\nwas designed.
The influence of the etching mask material on the sidewall morphology was\r\ninvestigated.
Masking materials with small grain sizes are preferable to achieve a desired shape.\r\nThe
evolution of the mesa form was investigated in dependence on the gas composition,
the applied\r\nbias, the pressure and the composition of the gas atmosphere. The
achieved sidewall slope was 84.5\r\ndeg. The aspect ratios of the fabricated structures
in the developed residue free ECR plasma etching\r\nprocess were between 5 and
10. Mesa structures aligned to [100] and [110] directions were\r\nfabricated."
article_type: original
author:
- first_name: Lars
full_name: Hiller, Lars
last_name: Hiller
- first_name: Thomas
full_name: Stauden, Thomas
last_name: Stauden
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Jörg
full_name: Pezoldt, Jörg
last_name: Pezoldt
citation:
ama: Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of
Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science
Forum. 2012;717-720:901-904. doi:10.4028/www.scientific.net/msf.717-720.901
apa: Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., & Pezoldt,
J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.
Materials Science Forum, 717–720, 901–904. https://doi.org/10.4028/www.scientific.net/msf.717-720.901
bibtex: '@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2012, title={ECR-Ectching
of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}, volume={717–720},
DOI={10.4028/www.scientific.net/msf.717-720.901},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller,
Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat
J. and Pezoldt, Jörg}, year={2012}, pages={901–904} }'
chicago: 'Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J.
As, and Jörg Pezoldt. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100)
Mesa Structures.” Materials Science Forum 717–720 (2012): 901–4. https://doi.org/10.4028/www.scientific.net/msf.717-720.901.'
ieee: 'L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt,
“ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” Materials
Science Forum, vol. 717–720, pp. 901–904, 2012, doi: 10.4028/www.scientific.net/msf.717-720.901.'
mla: Hiller, Lars, et al. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100)
Mesa Structures.” Materials Science Forum, vol. 717–720, Trans Tech Publications,
2012, pp. 901–04, doi:10.4028/www.scientific.net/msf.717-720.901.
short: L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials
Science Forum 717–720 (2012) 901–904.
conference:
location: Cleveland (USA)
name: International Conference on Silicon Carbide and Related Materials (ICSCRM)
2011
date_created: 2018-08-23T13:35:20Z
date_updated: 2023-10-09T09:09:13Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.4028/www.scientific.net/msf.717-720.901
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T13:37:42Z
date_updated: 2018-08-23T13:37:42Z
file_id: '4117'
file_name: ECR-etching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.pdf
file_size: 1309453
relation: main_file
success: 1
file_date_updated: 2018-08-23T13:37:42Z
has_accepted_license: '1'
language:
- iso: eng
page: 901-904
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
type: journal_article
user_id: '14931'
volume: 717-720
year: '2012'
...
---
_id: '4104'
abstract:
- lang: eng
text: We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001)
nanostructures. Transmission electron microscopy (TEM) studies show phase-pure
cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC
nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar
defects. The nanostructures, aligned parallel and perpendicular to the [110] directions
of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate.
These anti-phase domains strongly influence the optimum growth of GaN layers in
these regions. TEM measurements demonstrate a different stacking fault density
in the cubic GaN epilayer in these areas.
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: L.
full_name: Hiller, L.
last_name: Hiller
- first_name: T.
full_name: Stauden, T.
last_name: Stauden
- first_name: J.
full_name: Pezoldt, J.
last_name: Pezoldt
- first_name: K.
full_name: Duschik, K.
last_name: Duschik
- first_name: T.
full_name: Niendorf, T.
last_name: Niendorf
- first_name: H.J.
full_name: Maier, H.J.
last_name: Maier
- first_name: D.
full_name: Meertens, D.
last_name: Meertens
- first_name: K.
full_name: Tillmann, K.
last_name: Tillmann
- first_name: D.J.
full_name: As, D.J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001)
nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
apa: Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf,
T., Maier, H. J., Meertens, D., Tillmann, K., As, D. J., & Lindner, J. (2012).
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth,
378, 291–294. https://doi.org/10.1016/j.jcrysgro.2012.10.011
bibtex: '@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et
al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378},
DOI={10.1016/j.jcrysgro.2012.10.011},
journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf,
T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.},
year={2012}, pages={291–294} }'
chicago: 'Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal
of Crystal Growth 378 (2012): 291–94. https://doi.org/10.1016/j.jcrysgro.2012.10.011.'
ieee: 'R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,”
Journal of Crystal Growth, vol. 378, pp. 291–294, 2012, doi: 10.1016/j.jcrysgro.2012.10.011.'
mla: Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”
Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.
short: R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal
Growth 378 (2012) 291–294.
conference:
location: Nara (Japan)
name: 17th Int. Conference on MBE 2012
date_created: 2018-08-23T12:59:44Z
date_updated: 2025-12-16T08:12:58Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '35'
- _id: '230'
doi: 10.1016/j.jcrysgro.2012.10.011
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T13:01:13Z
date_updated: 2018-08-23T13:01:13Z
file_id: '4105'
file_name: Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf
file_size: 3716730
relation: main_file
success: 1
file_date_updated: 2018-08-23T13:01:13Z
has_accepted_license: '1'
intvolume: ' 378'
language:
- iso: eng
page: 291-294
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
type: journal_article
user_id: '16199'
volume: 378
year: '2012'
...
---
_id: '4136'
abstract:
- lang: eng
text: "Results of atomistic simulations aimed at understanding precipitation of
the highly attractive wide band gap\r\nsemiconductor material silicon carbide
in silicon are presented. The study involves a systematic investigation of\r\nintrinsic
and carbon-related defects as well as defect combinations and defect migration
by both, quantummechanical\r\nfirst-principles as well as empirical potential
methods. Comparing formation and activation energies,\r\nground-state structures
of defects and defect combinations as well as energetically favorable agglomeration
of\r\ndefects are predicted. Moreover, accurate ab initio calculations unveil
limitations of the analytical method based\r\non a Tersoff-like bond order potential.
A work-around is proposed in order to subsequently apply the highly efficient
technique on large structures not accessible by first-principles methods. The
outcome of both types of simulation provides a basic microscopic understanding
of defect formation and structural evolution particularly at non-equilibrium conditions
strongly deviated from the ground state as commonly found in SiC growth processes.
A possible precipitation mechanism, which conforms well to experimental findings
and clarifies contradictory views present in the literature is outlined."
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Jörg K. N.
full_name: Lindner, Jörg K. N.
id: '20797'
last_name: Lindner
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles
and empirical potential simulation study of intrinsic and carbon-related defects
in silicon. physica status solidi (c). 2012;9(10-11):1968-1973. doi:10.1002/pssc.201200198
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., &
Lindner, J. K. N. (2012). First-principles and empirical potential simulation
study of intrinsic and carbon-related defects in silicon. Physica Status Solidi
(c), 9(10–11), 1968–1973. https://doi.org/10.1002/pssc.201200198
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Schmidt_Rauls_Lindner_2012, title={First-principles
and empirical potential simulation study of intrinsic and carbon-related defects
in silicon}, volume={9}, DOI={10.1002/pssc.201200198},
number={10–11}, journal={physica status solidi (c)}, publisher={Wiley}, author={Zirkelbach,
F. and Stritzker, B. and Nordlund, K. and Schmidt, Wolf Gero and Rauls, E. and
Lindner, Jörg K. N.}, year={2012}, pages={1968–1973} }'
chicago: 'Zirkelbach, F., B. Stritzker, K. Nordlund, Wolf Gero Schmidt, E. Rauls,
and Jörg K. N. Lindner. “First-Principles and Empirical Potential Simulation Study
of Intrinsic and Carbon-Related Defects in Silicon.” Physica Status Solidi
(c) 9, no. 10–11 (2012): 1968–73. https://doi.org/10.1002/pssc.201200198.'
ieee: 'F. Zirkelbach, B. Stritzker, K. Nordlund, W. G. Schmidt, E. Rauls, and J.
K. N. Lindner, “First-principles and empirical potential simulation study of intrinsic
and carbon-related defects in silicon,” physica status solidi (c), vol.
9, no. 10–11, pp. 1968–1973, 2012, doi: 10.1002/pssc.201200198.'
mla: Zirkelbach, F., et al. “First-Principles and Empirical Potential Simulation
Study of Intrinsic and Carbon-Related Defects in Silicon.” Physica Status Solidi
(c), vol. 9, no. 10–11, Wiley, 2012, pp. 1968–73, doi:10.1002/pssc.201200198.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N.
Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.
date_created: 2018-08-27T12:19:26Z
date_updated: 2025-12-16T11:28:58Z
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- _id: '295'
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doi: 10.1002/pssc.201200198
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date_created: 2018-08-27T12:19:56Z
date_updated: 2018-08-27T12:19:56Z
file_id: '4137'
file_name: First-principles and empirical potential simulation study of intrinsic
and carbon-related defects in silicon.pdf
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intvolume: ' 9'
issue: 10-11
language:
- iso: eng
page: 1968-1973
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: First-principles and empirical potential simulation study of intrinsic and
carbon-related defects in silicon
type: journal_article
user_id: '16199'
volume: 9
year: '2012'
...
---
_id: '4140'
abstract:
- lang: eng
text: "In this paper we report on the successful reduction of tensile strain in
a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation
of a near-interface defect structure consisting\r\nof nanometric voids and stacking
fault type defects by He ion implantation and subsequent annealing\r\nyields significant
relaxation in the top SiC film. The microstructure of the defect layer is studied
by transmission electron microscopy, and the strain state of the 3C-SiC layer
was studied by high-resolution X-ray diffraction in a parallel beam configuration.
Typical process conditions for the growth of GaN films on the SiC layer were emulated
by high temperature treatments in a rapid thermal annealer or a quartz tube furnace.
It is found that prolonged annealing at high temperatures leads to ripening of
the voids and to a weaker reduction of the tensile strain. It is shown that this
problem can be overcome by the co-implantation of oxygen ions to form highly thermally
stable void/extended defect structures."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms. 2011;272:322-325. doi:10.1016/j.nimb.2011.01.092'
apa: 'Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Relaxation
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, 272, 322–325. https://doi.org/10.1016/j.nimb.2011.01.092'
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering},
volume={272}, DOI={10.1016/j.nimb.2011.01.092},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy,
B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }'
chicago: 'Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of
a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms 272 (2011): 322–25. https://doi.org/10.1016/j.nimb.2011.01.092.'
ieee: 'M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 272, pp. 322–325, 2011.'
mla: 'Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Beam Defect Engineering.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 272, Elsevier BV, 2011, pp. 322–25, doi:10.1016/j.nimb.2011.01.092.'
short: 'M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and
Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
272 (2011) 322–325.'
date_created: 2018-08-27T12:27:23Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.nimb.2011.01.092
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:29:34Z
date_updated: 2018-08-27T12:29:34Z
file_id: '4141'
file_name: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion beam defect engineering.pdf
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relation: main_file
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file_date_updated: 2018-08-27T12:29:34Z
has_accepted_license: '1'
intvolume: ' 272'
language:
- iso: eng
page: 322-325
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
beam defect engineering
type: journal_article
user_id: '55706'
volume: 272
year: '2011'
...
---
_id: '4142'
abstract:
- lang: eng
text: This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
near-interface defect structure containing nanometric voids and dislocation loops
by the implantation of He ions and subsequent thermal annealing. The structural
features of this defect microstructure are investigated by transmission electron
microscopy. High-resolution X-ray diffraction in a parallel beam configuration
is used to quantify the strain state of the top SiC layer. Further annealing experiments
were carried out in order to emulate typical process conditions for the growth
of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
annealing at elevated temperatures leads to coarsening of the voids and to a much
less efficient strain reduction. We show that this issue can be resolved by the
co-implantation of oxygen to form highly thermally stable cavity/extended defect
structures. The technique presented here may be useful for a variety of other
thermally mismatched bulk/thin film couples as well.
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Brian
full_name: Murphy, Brian
last_name: Murphy
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion implantation. physica status solidi
(c). 2011;8(3):944-947. doi:10.1002/pssc.201000342
apa: Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.
Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8},
DOI={10.1002/pssc.201000342},
number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen,
Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947}
}'
chicago: 'Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling
of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.”
Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.'
ieee: M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status
solidi (c), vol. 8, no. 3, pp. 944–947, 2011.
mla: Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no.
3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.
short: M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C)
8 (2011) 944–947.
date_created: 2018-08-27T12:31:20Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.1002/pssc.201000342
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:32:07Z
date_updated: 2018-08-27T12:32:07Z
file_id: '4143'
file_name: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion implantation.pdf
file_size: 152623
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:32:07Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '3'
language:
- iso: eng
page: 944-947
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
implantation
type: journal_article
user_id: '55706'
volume: 8
year: '2011'
...
---
_id: '4148'
abstract:
- lang: eng
text: Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under
hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range
a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From
5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure
monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping.
Above 8 GPa the crystalis completely transformed to its high-pressure phase where
two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected.
It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the
(_^5)D_0→(_^7)F_J (J=0,1,2) transitions are investigated. Linear shifts of
-19cm^(-1)/GPa for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure
range from 0 to 5 GPa.
article_type: original
author:
- first_name: Marie Christin
full_name: Wiegand, Marie Christin
last_name: Wiegand
- first_name: Werner
full_name: Sievers, Werner
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Th.
full_name: Tröster, Th.
last_name: Tröster
- first_name: S.
full_name: Schweizer, S.
last_name: Schweizer
citation:
ama: Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence.
2011;131(11):2400-2403. doi:10.1016/j.jlumin.2011.05.035
apa: Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., & Schweizer, S.
(2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure.
Journal of Luminescence, 131(11), 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035
bibtex: '@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={10.1016/j.jlumin.2011.05.035},
number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand,
Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer,
S.}, year={2011}, pages={2400–2403} }'
chicago: 'Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and
S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic
Pressure.” Journal of Luminescence 131, no. 11 (2011): 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035.'
ieee: M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure,” Journal of Luminescence,
vol. 131, no. 11, pp. 2400–2403, 2011.
mla: Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped
BaBr2 under Hydrostatic Pressure.” Journal of Luminescence, vol. 131, no.
11, Elsevier BV, 2011, pp. 2400–03, doi:10.1016/j.jlumin.2011.05.035.
short: M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of
Luminescence 131 (2011) 2400–2403.
date_created: 2018-08-27T12:44:42Z
date_updated: 2022-01-06T07:00:25Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jlumin.2011.05.035
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:45:30Z
date_updated: 2018-08-27T12:45:30Z
file_id: '4149'
file_name: Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic
pressure.pdf
file_size: 279989
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:45:30Z
has_accepted_license: '1'
intvolume: ' 131'
issue: '11'
language:
- iso: eng
page: 2400-2403
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure
type: journal_article
user_id: '55706'
volume: 131
year: '2011'
...
---
_id: '4150'
abstract:
- lang: eng
text: "Atomistic simulations on the silicon carbide precipitation in bulk silicon
employing both, classical potential and\r\nfirst-principlesmethods are presented.
The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation
mechanism in the context of controversial discussions in the literature. For the
quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation
process are calculated in feasible systems of small\r\nsize. The migration mechanism
of a carbon \x02100\x03 interstitial and silicon \x0211 0\x03 self-interstitial
in otherwise\r\ndefect-free silicon are investigated using density functional
theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial
and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated
systematically. Interactions of various combinations of defects have been characterized
including a\r\ncouple of selected migration pathways within these configurations.
Most of the investigated pairs of defects tend\r\nto agglomerate allowing for
a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds
turns out to be very unlikely. In contrast, substitutional carbon occurs in all
probability. A long range\r\ncapture radius has been observed for pairs of interstitial
carbon as well as interstitial carbon and vacancies. A\r\nrather small capture
radius is predicted for substitutional carbon and silicon self-interstitials.
Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide
in bulk silicon are established and conformability to\r\nexperimental findings
is discussed. Furthermore, results of the accurate first-principles calculations
on defects\r\nand carbon diffusion in silicon are compared to results of classical
potential simulations revealing significant\r\nlimitations of the latter method.
An approach to work around this problem is proposed. Finally, results of the\r\nclassical
potential molecular dynamics simulations of large systems are examined, which
reinforce previous\r\nassumptions and give further insight into basic processes
involved in the silicon carbide transition."
article_number: '064126'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2011). Combinedab initioand classical potential simulation study on
silicon carbide precipitation in silicon. Physical Review B, 84(6).
https://doi.org/10.1103/physrevb.84.064126
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon}, volume={84}, DOI={10.1103/physrevb.84.064126},
number={6064126}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon
Carbide Precipitation in Silicon.” Physical Review B 84, no. 6 (2011).
https://doi.org/10.1103/physrevb.84.064126.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon,” Physical Review B, vol. 84, no. 6, 2011.
mla: Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation
Study on Silicon Carbide Precipitation in Silicon.” Physical Review B,
vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:10.1103/physrevb.84.064126.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 84 (2011).
date_created: 2018-08-27T13:17:45Z
date_updated: 2022-01-06T07:00:26Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.84.064126
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T13:18:53Z
date_updated: 2018-08-27T13:18:53Z
file_id: '4151'
file_name: Combined ab initio and classical potential simulation study on silicon
carbide precipitation in silicon.pdf
file_size: 1541698
relation: main_file
success: 1
file_date_updated: 2018-08-27T13:18:53Z
has_accepted_license: '1'
intvolume: ' 84'
issue: '6'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon
type: journal_article
user_id: '55706'
volume: 84
year: '2011'
...