---
_id: '4146'
abstract:
- lang: eng
text: The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001)
substrates by plasma-assisted molecular beam epitaxy is reported. The influence
of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase
domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting
in equal plane orientation and the same anti-phase boundaries. The presence of
the APDs is independent of the GaN layer thickness. Atomic force microscopy surface
analysis indicates lateral growth anisotropy of GaN facets in dependence of the
APD orientation. This anisotropy can be linked to Ga and N face types of the {111}
planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to
3C-SiC, however, a difference in GaN phase composition for the two types of APDs
can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence
spectroscopy.
article_number: '123512'
article_type: original
author:
- first_name: Ricarda
full_name: Maria Kemper, Ricarda
last_name: Maria Kemper
- first_name: Thorsten
full_name: Schupp, Thorsten
last_name: Schupp
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Thomas
full_name: Niendorf, Thomas
last_name: Niendorf
- first_name: Hans-Jürgen
full_name: Maier, Hans-Jürgen
last_name: Maier
- first_name: Anja
full_name: Dempewolf, Anja
last_name: Dempewolf
- first_name: Frank
full_name: Bertram, Frank
last_name: Bertram
- first_name: Jürgen
full_name: Christen, Jürgen
last_name: Christen
- first_name: Ronny
full_name: Kirste, Ronny
last_name: Kirste
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat
full_name: As, Donat
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN.
Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050
apa: Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf,
A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & As,
D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics,
110(12), Article 123512. https://doi.org/10.1063/1.3666050
bibtex: '@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et
al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={10.1063/1.3666050},
number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf,
Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen,
Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }'
chicago: Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf,
Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in
Cubic GaN.” Journal of Applied Physics 110, no. 12 (2011). https://doi.org/10.1063/1.3666050.
ieee: 'R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal
of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.'
mla: Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” Journal
of Applied Physics, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:10.1063/1.3666050.
short: R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf,
F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of
Applied Physics 110 (2011).
date_created: 2018-08-27T12:40:30Z
date_updated: 2023-10-09T09:10:50Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3666050
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:42:38Z
date_updated: 2018-08-27T12:42:38Z
file_id: '4147'
file_name: Anti-phase domains in cubic GaN.pdf
file_size: 3305430
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:42:38Z
has_accepted_license: '1'
intvolume: ' 110'
issue: '12'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Anti-phase domains in cubic GaN
type: journal_article
user_id: '14931'
volume: 110
year: '2011'
...
---
_id: '4144'
abstract:
- lang: eng
text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on
nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content
and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001)
is achieved by self-ordered colloidal masks for the first time. The method presented
here offers the possibility to create nano-patterned cubic GaN without the need
for a GaN etching process andt hus isa potential alternative to the conventional
top–down fabrication techniques."
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: 'Donald '
full_name: 'As, Donald '
last_name: As
citation:
ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned
3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87.
doi:10.1016/j.jcrysgro.2010.12.042
apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,
… As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates.
Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010,
title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323},
DOI={10.1016/j.jcrysgro.2010.12.042},
number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak,
E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87}
}'
chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak,
Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned
3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010):
84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.'
ieee: R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si
(001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87,
2010.
mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001)
Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010,
pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.
Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
date_created: 2018-08-27T12:34:33Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jcrysgro.2010.12.042
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:35:32Z
date_updated: 2018-08-27T12:35:32Z
file_id: '4145'
file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
file_size: 665964
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:35:32Z
has_accepted_license: '1'
intvolume: ' 323'
issue: '1'
language:
- iso: eng
page: 84-87
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
type: journal_article
user_id: '55706'
volume: 323
year: '2010'
...
---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '4204'
abstract:
- lang: eng
text: "A comparative theoretical investigation of carbon interstitials in silicon
is presented. Calculations using\r\nclassical potentials are compared to first-principles
density-functional theory calculations of the geometries,\r\nformation, and activation
energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription
of this system. In contrast to previous studies, the present first-principles
calculations of\r\nthe interstitial carbon migration path yield an activation
energy that excellently matches the experiment. The\r\nbond-centered interstitial
configuration shows a net magnetization of two electrons, illustrating the need
for\r\nspin-polarized calculations."
article_number: '094110'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical
potentials and first-principles methods. Physical Review B, 82(9).
https://doi.org/10.1103/physrevb.82.094110
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods}, volume={82}, DOI={10.1103/physrevb.82.094110},
number={9094110}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials
and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Defects in carbon implanted silicon calculated by classical potentials
and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
mla: Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical
Potentials and First-Principles Methods.” Physical Review B, vol. 82, no.
9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 82 (2010).
date_created: 2018-08-28T12:30:15Z
date_updated: 2022-01-06T07:00:35Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.82.094110
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:31:01Z
date_updated: 2018-08-28T12:31:01Z
file_id: '4205'
file_name: Defects in Carbon implanted Silicon calculated by classical potentials
and first principles methods.pdf
file_size: 238023
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:31:01Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '9'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Defects in carbon implanted silicon calculated by classical potentials and
first-principles methods
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4206'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Advanced topics and applications of Transmission Electron Microscopy,
Part I-II. In: ; 2010.'
apa: Lindner, J. (2010). Advanced topics and applications of Transmission Electron
Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica
Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma
de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2010, title={Advanced topics and applications of
Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010}
}'
chicago: Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II,” 2010.
ieee: J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy,
Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada,
Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid
(Spain), 2010.
mla: Lindner, Jörg. Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II. 2010.
short: 'J. Lindner, in: 2010.'
conference:
end_date: 2010-04-16
location: Universidad Autónoma de Madrid (Spain)
name: 'Guest Lectures at Departamento de Fisica Applicada, Master de Materiales
Avanzados y Nanotecnologias '
start_date: 2010-04-14
date_created: 2018-08-28T12:34:11Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
status: public
title: Advanced topics and applications of Transmission Electron Microscopy, Part
I-II
type: conference_abstract
user_id: '55706'
year: '2010'
...
---
_id: '4207'
citation:
ama: Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering.
Vol 1181. MRS Symposium Proceedings ; 2010.
apa: 'Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion
Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting
2009, San Francisco (USA): MRS Symposium Proceedings .'
bibtex: '@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering},
volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }'
chicago: Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams
and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.
ieee: D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering,
vol. 1181. MRS Symposium Proceedings , 2010.
mla: Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181,
MRS Symposium Proceedings , 2010.
short: D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering,
MRS Symposium Proceedings , 2010.
conference:
location: San Francisco (USA)
name: MRS Spring Meeting 2009
date_created: 2018-08-28T12:38:16Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
editor:
- first_name: D.
full_name: Ila, D.
last_name: Ila
- first_name: 'N. '
full_name: 'Kishimoto, N. '
last_name: Kishimoto
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Baglin, J.
last_name: Baglin
intvolume: ' 1181'
language:
- iso: eng
publication_identifier:
isbn:
- 978-1-60511-154-4
publication_status: published
publisher: 'MRS Symposium Proceedings '
status: public
title: Ion Beams and Nano-Engineering
type: book_editor
user_id: '55706'
volume: 1181
year: '2010'
...
---
_id: '4152'
abstract:
- lang: eng
text: A novel technique to form periodically nanostructured Si surface morphologies
based on nanosphere lithography (NSL) and He ion implantation induced swelling
is studied in detail. It is shown that by implantation of keV He ions through
the nanometric openings of NSL masks regular arrays of hillocks and rings can
be created on silicon surfaces. The shape and size of these surface features can
be easily controlled by adjusting the ion dose and energy as well as the mask
size. Feature heights of more than 100 nm can be obtained, while feature distances
are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to
be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy
measurements of the surface morphology are supplemented by cross-sectional transmission
electron microscopy, revealing the inner structure of hillocks to consist of a
central cavity surrounded by a hierarchical arrangement of smaller voids. The
surface morphologies developed here have the potential to be useful for fixing
and separating nano-objects on a silicon surface.
article_number: 1181-DD10-02
article_type: original
author:
- first_name: Frederic J.C.
full_name: Fischer, Frederic J.C.
last_name: Fischer
- first_name: Michael
full_name: Weinl, Michael
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
citation:
ama: Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning
of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.
MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02
apa: Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale
Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02
bibtex: '@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02},
number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University
Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg
and Stritzker, Bernd}, year={2009} }'
chicago: Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker.
“Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.
ieee: F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks,” MRS Proceedings, vol. 1181, 2009.
mla: Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using
Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings,
vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.
short: F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181
(2009).
conference:
end_date: 2009-04-17
location: San Franicsco (USA)
name: MRS Spring Meeting 2009
start_date: 2009-04-13
date_created: 2018-08-27T13:21:44Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/proc-1181-dd10-02
intvolume: ' 1181'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He
Implantation through NSL-Masks
type: journal_article
user_id: '55706'
volume: 1181
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...