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Henksmeier <i>et al.</i>, “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art. no. 126756, 2022, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","chicago":"Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i> 593 (2022). <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.","short":"T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).","ama":"Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>. 2022;593. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>","bibtex":"@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates}, volume={593}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>}, number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier, Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido and Reuter, Dirk}, year={2022} }"},"publication":"Journal of Crystal Growth","volume":593,"user_id":"42539","doi":"10.1016/j.jcrysgro.2022.126756","publisher":"Elsevier","_id":"36804","language":[{"iso":"eng"}],"article_number":"126756","intvolume":"       593","publication_status":"published","date_updated":"2023-01-13T16:02:06Z","author":[{"id":"42539","full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier"},{"full_name":"Schulz, Johann Friedemann","last_name":"Schulz","first_name":"Johann Friedemann"},{"first_name":"Elias","last_name":"Kluth","full_name":"Kluth, Elias"},{"full_name":"Feneberg, Martin","first_name":"Martin","last_name":"Feneberg"},{"full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger","last_name":"Goldhahn"},{"full_name":"Sanchez, Ana M.","first_name":"Ana M.","last_name":"Sanchez"},{"first_name":"Markus","last_name":"Voigt","full_name":"Voigt, Markus","id":"15182"},{"id":"194","full_name":"Grundmeier, Guido","first_name":"Guido","last_name":"Grundmeier"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"}],"title":"Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates","status":"public","year":"2022"},{"project":[{"name":"TRR 142: TRR 142","_id":"53"},{"_id":"54","name":"TRR 142 - A: TRR 142 - Project Area A"},{"_id":"60","name":"TRR 142 - A3: TRR 142 - Subproject A3"},{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"citation":{"chicago":"Jonas, Björn, Dirk Florian Heinze, Eva Schöll, Patricia Kallert, Timo Langer, Sebastian Krehs, Alex Widhalm, Klaus Jöns, Dirk Reuter, and Artur Zrenner. <i>Nonlinear Down-Conversion in a Single Quantum Dot</i>. 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In: ; 2018.","bibtex":"@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A }, author={Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}, year={2018} }"},"date_created":"2018-09-17T13:20:48Z","type":"conference","department":[{"_id":"286"},{"_id":"292"}]},{"date_updated":"2022-01-06T06:59:59Z","conference":{"name":"E-MRS Fall Meeting 2017","start_date":"2017-09-18","location":"Warsaw (Poland)","end_date":"2017-09-21"},"author":[{"full_name":"Kunnathully, Vinay","first_name":"Vinay","last_name":"Kunnathully"},{"full_name":"Riedl, Thomas","last_name":"Riedl","first_name":"Thomas","id":"36950"},{"full_name":"Karlisch, A.","last_name":"Karlisch","first_name":"A."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"status":"public","title":"InAs heteroepitaxy on GaAs patterned by nanosphere lithography","year":"2017","user_id":"55706","_id":"3955","citation":{"chicago":"Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017.","short":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.","ieee":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.","apa":"Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., &#38; Lindner, J. (2017). InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaw (Poland).","bibtex":"@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }","ama":"Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. 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(2017). Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaq (Poland).","ieee":"T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.","ama":"Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. In: ; 2017.","short":"T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017.","chicago":"Riedl, Thomas, Vinay  Kunnathully, A. Karlisch, Dirk Reuter, and Jörg Lindner. “Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography,” 2017.","bibtex":"@inproceedings{Riedl_Kunnathully_Karlisch_Reuter_Lindner_2017, title={Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}, author={Riedl, Thomas and Kunnathully, Vinay  and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }"}},{"user_id":"20798","_id":"3988","language":[{"iso":"eng"}],"series_title":"contributed talk N.16.1","date_updated":"2022-01-06T07:00:04Z","title":"Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs","status":"public","year":"2017","author":[{"id":"36950","last_name":"Riedl","first_name":"Thomas","full_name":"Riedl, Thomas"},{"full_name":"Kunnathully, Vinay","first_name":"Vinay","last_name":"Kunnathully"},{"last_name":"Karlisch","first_name":"A.","full_name":"Karlisch, A."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Weber, N.","first_name":"N.","last_name":"Weber"},{"full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798"},{"full_name":"Schierholz, R.","first_name":"R.","last_name":"Schierholz"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"conference":{"location":"Straßburg (France)","start_date":"2017-05-22","name":"E-MRS Spring Meeting 2017","end_date":"2017-05-26"},"type":"conference","department":[{"_id":"286"},{"_id":"292"},{"_id":"287"},{"_id":"15"},{"_id":"35"},{"_id":"230"}],"date_created":"2018-08-21T11:39:30Z","citation":{"ama":"Riedl T, Kunnathully V, Karlisch A, et al. Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. 2017.","bibtex":"@article{Riedl_Kunnathully_Karlisch_Reuter_Weber_Meier_Schierholz_Lindner_2017, series={contributed talk N.16.1}, title={Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs}, author={Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}, year={2017}, collection={contributed talk N.16.1} }","mla":"Riedl, Thomas, et al. <i>Morphology, Structure and Enhanced PL of Molecular Beam Epitaxial In0.2Ga0.8As Layers on Nanopillar Patterned GaAs</i>. 2017.","chicago":"Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, N. Weber, Cedrik Meier, R. Schierholz, and Jörg Lindner. “Morphology, Structure and Enhanced PL of Molecular Beam Epitaxial In0.2Ga0.8As Layers on Nanopillar Patterned GaAs.” Contributed Talk N.16.1, 2017.","short":"T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, (2017).","apa":"Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., Weber, N., Meier, C., … Lindner, J. (2017). Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. Presented at the E-MRS Spring Meeting 2017, Straßburg (France).","ieee":"T. Riedl <i>et al.</i>, “Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs.” 2017."}},{"year":"2016","title":"Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots","author":[{"last_name":"Blumenthal","first_name":"Sarah","full_name":"Blumenthal, Sarah"},{"first_name":"Matthias","last_name":"Bürger","full_name":"Bürger, Matthias"},{"last_name":"Hildebrandt","first_name":"Andre","full_name":"Hildebrandt, Andre"},{"full_name":"Förstner, Jens","last_name":"Förstner","first_name":"Jens","orcid":"0000-0001-7059-9862","id":"158"},{"first_name":"Nils","last_name":"Weber","full_name":"Weber, Nils"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","id":"20798"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"id":"14","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat J.","full_name":"As, Donat J."}],"publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","date_updated":"2023-10-09T09:06:08Z","article_type":"original","intvolume":"        13","language":[{"iso":"eng"}],"doi":"10.1002/pssc.201600010","publication":"physica status solidi (c)","issue":"5-6","abstract":[{"text":"We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. ","lang":"eng"}],"file":[{"creator":"hclaudia","date_created":"2018-08-13T09:20:05Z","date_updated":"2018-08-13T09:20:05Z","relation":"main_file","file_size":1119165,"access_level":"closed","file_name":"2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf","success":1,"content_type":"application/pdf","file_id":"3889"}],"date_created":"2018-08-13T09:14:58Z","keyword":["tet_topic_phc","tet_topic_qd"],"type":"journal_article","department":[{"_id":"61"},{"_id":"284"},{"_id":"290"},{"_id":"292"},{"_id":"287"},{"_id":"35"},{"_id":"230"}],"status":"public","has_accepted_license":"1","page":"292-296","publisher":"Wiley","_id":"3888","user_id":"14931","ddc":["530"],"volume":13,"file_date_updated":"2018-08-13T09:20:05Z","citation":{"chicago":"Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner, Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i> 13, no. 5–6 (2016): 292–96. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>.","short":"S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.","ama":"Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>physica status solidi (c)</i>. 2016;13(5-6):292-296. doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>","bibtex":"@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016, title={Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>}, number={5–6}, journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296} }","mla":"Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i>, vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","apa":"Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier, C., Reuter, D., &#38; As, D. J. (2016). Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>Physica Status Solidi (c)</i>, <i>13</i>(5–6), 292–296. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>","ieee":"S. Blumenthal <i>et al.</i>, “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” <i>physica status solidi (c)</i>, vol. 13, no. 5–6, pp. 292–296, 2016, doi: <a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>."}},{"abstract":[{"text":"Spins in semiconductor quantum dots have been considered as prospective quantum bit excitations. Their coupling to the crystal environment manifests itself in a limitation of the spin coherence times to the microsecond range, both for electron and hole spins. This rather short-lived coherence compared to atomic states asks for manipulations on timescales as short as possible. Due to the huge dipole moment for transitions between the valence and conduction band, pulsed laser systems offer the possibility to perform manipulations within picoseconds or even faster. Here, we report on results that show the potential of optical spin manipulations with currently available pulsed laser systems. Using picosecond laser pulses, we demonstrate optically induced spin rotations of electron and hole spins. We further realize the optical decoupling of the hole spins from the nuclear surrounding at the nanosecond timescales and demonstrate an all-optical spin tomography for interacting electron spin sub-ensembles.","lang":"eng"}],"issue":"1","publication":"Applied Physics B","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"170"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"290"}],"type":"journal_article","keyword":["Spin Polarization","Pump Pulse","Trion","Spin Component","Coherence Time"],"date_created":"2018-08-29T08:35:10Z","article_type":"original","intvolume":"       122","publication_status":"published","date_updated":"2025-12-16T16:44:01Z","publication_identifier":{"issn":["0946-2171","1432-0649"]},"author":[{"first_name":"S.","last_name":"Varwig","full_name":"Varwig, S."},{"last_name":"Evers","first_name":"E.","full_name":"Evers, E."},{"full_name":"Greilich, A.","first_name":"A.","last_name":"Greilich"},{"full_name":"Yakovlev, D. R.","first_name":"D. R.","last_name":"Yakovlev"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"id":"606","full_name":"Zrenner, Artur","last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944"},{"last_name":"Bayer","first_name":"M.","full_name":"Bayer, M."}],"title":"Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots","year":"2016","doi":"10.1007/s00340-015-6274-y","language":[{"iso":"eng"}],"article_number":"17","citation":{"chicago":"Varwig, S., E. Evers, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, Torsten Meier, Artur Zrenner, and M. Bayer. “Advanced Optical Manipulation of Carrier Spins in (In,Ga)As Quantum Dots.” <i>Applied Physics B</i> 122, no. 1 (2016). <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">https://doi.org/10.1007/s00340-015-6274-y</a>.","short":"S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T. Meier, A. Zrenner, M. Bayer, Applied Physics B 122 (2016).","apa":"Varwig, S., Evers, E., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A. D., Meier, T., Zrenner, A., &#38; Bayer, M. (2016). Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots. <i>Applied Physics B</i>, <i>122</i>(1), Article 17. <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">https://doi.org/10.1007/s00340-015-6274-y</a>","ieee":"S. Varwig <i>et al.</i>, “Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots,” <i>Applied Physics B</i>, vol. 122, no. 1, Art. no. 17, 2016, doi: <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>.","ama":"Varwig S, Evers E, Greilich A, et al. Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots. <i>Applied Physics B</i>. 2016;122(1). doi:<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>","bibtex":"@article{Varwig_Evers_Greilich_Yakovlev_Reuter_Wieck_Meier_Zrenner_Bayer_2016, title={Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots}, volume={122}, DOI={<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>}, number={117}, journal={Applied Physics B}, publisher={Springer Nature}, author={Varwig, S. and Evers, E. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Meier, Torsten and Zrenner, Artur and Bayer, M.}, year={2016} }","mla":"Varwig, S., et al. “Advanced Optical Manipulation of Carrier Spins in (In,Ga)As Quantum Dots.” <i>Applied Physics B</i>, vol. 122, no. 1, 17, Springer Nature, 2016, doi:<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>."},"status":"public","volume":122,"user_id":"16199","_id":"4246","publisher":"Springer Nature"},{"language":[{"iso":"eng"}],"doi":"10.1038/srep10313","publication_identifier":{"issn":["2045-2322"]},"author":[{"full_name":"Mantei, D.","last_name":"Mantei","first_name":"D."},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","full_name":"Förstner, Jens","id":"158"},{"full_name":"Gordon, S.","first_name":"S.","last_name":"Gordon"},{"full_name":"Leier, Y. A.","first_name":"Y. A.","last_name":"Leier"},{"first_name":"A. K.","last_name":"Rai","full_name":"Rai, A. K."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Zrenner, Artur","first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606"}],"year":"2015","title":"Robust Population Inversion by Polarization Selective Pulsed Excitation","article_type":"original","intvolume":"         5","publication_status":"published","date_updated":"2022-01-06T06:59:53Z","date_created":"2018-08-13T10:34:17Z","file":[{"file_name":"2015-05 Mantei,Förstner,Gordon,Leier,Rai,Reuter,Wieck,Zrenner_Robust Population Inversion by Polarization Selective Pulsed Excitation.pdf","access_level":"open_access","file_size":1089911,"relation":"main_file","date_updated":"2018-08-21T11:37:12Z","file_id":"3901","content_type":"application/pdf","creator":"hclaudia","date_created":"2018-08-13T10:39:14Z"}],"department":[{"_id":"61"},{"_id":"15"},{"_id":"292"},{"_id":"290"}],"keyword":["tet_topic_qd"],"type":"journal_article","issue":"1","publication":"Scientific Reports","abstract":[{"text":"The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.","lang":"eng"}],"_id":"3900","publisher":"Springer Nature","urn":"39004","page":"10313","volume":5,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1","oa":"1","citation":{"apa":"Mantei, D., Förstner, J., Gordon, S., Leier, Y. A., Rai, A. K., Reuter, D., … Zrenner, A. (2015). Robust Population Inversion by Polarization Selective Pulsed Excitation. <i>Scientific Reports</i>, <i>5</i>(1), 10313. <a href=\"https://doi.org/10.1038/srep10313\">https://doi.org/10.1038/srep10313</a>","ieee":"D. Mantei <i>et al.</i>, “Robust Population Inversion by Polarization Selective Pulsed Excitation,” <i>Scientific Reports</i>, vol. 5, no. 1, p. 10313, 2015.","short":"D. Mantei, J. Förstner, S. Gordon, Y.A. Leier, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Scientific Reports 5 (2015) 10313.","chicago":"Mantei, D., Jens Förstner, S. Gordon, Y. A. Leier, A. K. Rai, Dirk Reuter, A. D. Wieck, and Artur Zrenner. “Robust Population Inversion by Polarization Selective Pulsed Excitation.” <i>Scientific Reports</i> 5, no. 1 (2015): 10313. <a href=\"https://doi.org/10.1038/srep10313\">https://doi.org/10.1038/srep10313</a>.","mla":"Mantei, D., et al. “Robust Population Inversion by Polarization Selective Pulsed Excitation.” <i>Scientific Reports</i>, vol. 5, no. 1, Springer Nature, 2015, p. 10313, doi:<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>.","ama":"Mantei D, Förstner J, Gordon S, et al. Robust Population Inversion by Polarization Selective Pulsed Excitation. <i>Scientific Reports</i>. 2015;5(1):10313. doi:<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>","bibtex":"@article{Mantei_Förstner_Gordon_Leier_Rai_Reuter_Wieck_Zrenner_2015, title={Robust Population Inversion by Polarization Selective Pulsed Excitation}, volume={5}, DOI={<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>}, number={1}, journal={Scientific Reports}, publisher={Springer Nature}, author={Mantei, D. and Förstner, Jens and Gordon, S. and Leier, Y. A. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}, year={2015}, pages={10313} }"},"file_date_updated":"2018-08-21T11:37:12Z"},{"file_date_updated":"2018-08-21T13:10:09Z","citation":{"mla":"Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 452–55, doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>.","apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2015). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 452–455. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 452–455, 2015.","chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 452–55. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>.","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015) 452–455.","ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>physica status solidi (c)</i>. 2015;12(4-5):452-455. doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>","bibtex":"@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455} }"},"has_accepted_license":"1","status":"public","user_id":"42514","ddc":["530"],"volume":12,"page":"452-455","_id":"4024","publisher":"Wiley","abstract":[{"lang":"eng","text":"We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were obtained from uncapped samples by atomic force microscopy. These results were correlated \r\nwith similar but capped samples by photoluminescence experiments. The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison \r\nbetween the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the main formation process of the cubic GaN QDs.  "}],"publication":"physica status solidi (c)","issue":"4-5","type":"journal_article","department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"file":[{"creator":"hclaudia","date_created":"2018-08-21T13:10:09Z","file_name":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process.pdf","file_size":650052,"access_level":"closed","relation":"main_file","date_updated":"2018-08-21T13:10:09Z","file_id":"4025","success":1,"content_type":"application/pdf"}],"date_created":"2018-08-21T13:07:35Z","publication_status":"published","date_updated":"2022-01-06T07:00:08Z","article_type":"original","intvolume":"        12","year":"2015","title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","publication_identifier":{"issn":["1862-6351"]},"author":[{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"As, D. J.","last_name":"As","first_name":"D. J."}],"doi":"10.1002/pssc.201400132","language":[{"iso":"eng"}]},{"citation":{"bibtex":"@inproceedings{Bürger_Lindner_Reuter_As_2014, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D.J.}, year={2014} }","ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. In: ; 2014.","mla":"Bürger, M., et al. <i>Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process</i>. 2014.","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, in: 2014.","chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D.J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process,” 2014.","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.","apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2014). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. Presented at the European Materials Research Society Spring Meeting 2014, Lille (France)."},"date_created":"2018-08-22T12:11:40Z","type":"conference","department":[{"_id":"15"},{"_id":"286"},{"_id":"292"}],"year":"2014","title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","status":"public","conference":{"location":"Lille (France)","name":"European Materials Research Society Spring Meeting 2014","start_date":"2014-05-26","end_date":"2014-05-30"},"author":[{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"As","first_name":"D.J.","full_name":"As, D.J."}],"date_updated":"2022-01-06T07:00:11Z","language":[{"iso":"eng"}],"_id":"4061","user_id":"55706"},{"type":"journal_article","keyword":["tet_topic_qd","tet_topic_microdisk"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"2"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"287"},{"_id":"313"},{"_id":"170"}],"file":[{"creator":"hclaudia","date_created":"2018-08-27T10:06:57Z","file_size":403248,"access_level":"closed","file_name":"2010 Piegdon,Offer,Lork,Urbanski,Hoischen,Kitzerwo, Declair,Förstner_Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator.pdf","date_updated":"2018-08-27T10:06:57Z","relation":"main_file","content_type":"application/pdf","success":1,"file_id":"4124"}],"date_created":"2018-08-27T10:03:35Z","abstract":[{"lang":"eng","text":"GaAs-based semiconductor microdisks with high quality whispering gallery modes (Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs) served as a light source to feed the optical modes at room temperature. In order to achieve frequency tuning of the optical modes, the microdisk devices have been immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic phase below the clearing temperature of  TC≈34°C .We have studied the device performance in the temperature rangeof T=20-50°C, in order to investigate the influence of the nematic–isotropic phase transition on the optical modes. Moreover,we havea pplied an AC electric field to the device,which leads in the nematic phase to a reorientation of the anisotropic dielectric tensor of the liquid crystal.This electrical anisotropy can be used to achieve electrical tunability of the optical modes.Using the finite-difference time domain (FDTD) technique with an anisotropic material model, we are able to describe the influence of the liquid crystal qualitatively."}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","doi":"10.1016/j.physe.2009.12.051","language":[{"iso":"eng"}],"date_updated":"2025-12-16T11:32:03Z","publication_status":"published","intvolume":"        42","article_type":"original","year":"2010","title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","author":[{"full_name":"Piegdon, Karoline A.","last_name":"Piegdon","first_name":"Karoline A."},{"full_name":"Offer, Matthias","first_name":"Matthias","last_name":"Offer"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"full_name":"Urbanski, Martin","first_name":"Martin","last_name":"Urbanski"},{"full_name":"Hoischen, Andreas","first_name":"Andreas","last_name":"Hoischen"},{"id":"254","first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried"},{"full_name":"Declair, Stefan","last_name":"Declair","first_name":"Stefan"},{"id":"158","full_name":"Förstner, Jens","first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner"},{"id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"id":"20798","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"}],"publication_identifier":{"issn":["1386-9477"]},"file_date_updated":"2018-08-27T10:06:57Z","citation":{"mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }","apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>.","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555."},"ddc":["530"],"user_id":"16199","volume":42,"page":"2552-2555","publisher":"Elsevier BV","_id":"4123","has_accepted_license":"1","status":"public"},{"oa":"1","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"citation":{"chicago":"Piegdon, Karoline A., Stefan Declair, Jens Förstner, Torsten Meier, Heiner Matthias, Martin Urbanski, Heinz-Siegfried Kitzerow, et al. “Tuning Quantum-Dot Based Photonic Devices with Liquid Crystals.” <i>Optics Express</i> 18, no. 8 (2010). <a href=\"https://doi.org/10.1364/oe.18.007946\">https://doi.org/10.1364/oe.18.007946</a>.","short":"K.A. Piegdon, S. Declair, J. Förstner, T. Meier, H. Matthias, M. Urbanski, H.-S. Kitzerow, D. Reuter, A.D. Wieck, A. Lorke, C. Meier, Optics Express 18 (2010).","apa":"Piegdon, K. A., Declair, S., Förstner, J., Meier, T., Matthias, H., Urbanski, M., Kitzerow, H.-S., Reuter, D., Wieck, A. D., Lorke, A., &#38; Meier, C. (2010). Tuning quantum-dot based photonic devices with liquid crystals. <i>Optics Express</i>, <i>18</i>(8), Article 7946. <a href=\"https://doi.org/10.1364/oe.18.007946\">https://doi.org/10.1364/oe.18.007946</a>","ieee":"K. A. Piegdon <i>et al.</i>, “Tuning quantum-dot based photonic devices with liquid crystals,” <i>Optics Express</i>, vol. 18, no. 8, Art. no. 7946, 2010, doi: <a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>.","ama":"Piegdon KA, Declair S, Förstner J, et al. Tuning quantum-dot based photonic devices with liquid crystals. <i>Optics Express</i>. 2010;18(8). doi:<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>","bibtex":"@article{Piegdon_Declair_Förstner_Meier_Matthias_Urbanski_Kitzerow_Reuter_Wieck_Lorke_et al._2010, title={Tuning quantum-dot based photonic devices with liquid crystals}, volume={18}, DOI={<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>}, number={87946}, journal={Optics Express}, publisher={The Optical Society}, author={Piegdon, Karoline A. and Declair, Stefan and Förstner, Jens and Meier, Torsten and Matthias, Heiner and Urbanski, Martin and Kitzerow, Heinz-Siegfried and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel and et al.}, year={2010} }","mla":"Piegdon, Karoline A., et al. “Tuning Quantum-Dot Based Photonic Devices with Liquid Crystals.” <i>Optics Express</i>, vol. 18, no. 8, 7946, The Optical Society, 2010, doi:<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>."},"file_date_updated":"2018-09-04T20:02:01Z","volume":18,"user_id":"16199","ddc":["530"],"urn":"41725","_id":"4172","publisher":"The Optical Society","has_accepted_license":"1","status":"public","department":[{"_id":"15"},{"_id":"287"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"230"},{"_id":"313"},{"_id":"170"},{"_id":"27"},{"_id":"34"},{"_id":"61"}],"keyword":["tet_topic_qd","tet_topic_microdisk"],"type":"journal_article","date_created":"2018-08-28T08:50:06Z","file":[{"date_updated":"2018-09-04T20:02:01Z","relation":"main_file","access_level":"open_access","file_size":627755,"file_name":"2010 Piegdon,Declair,Förstner,Meier T,Matthias,Urbanski,Kitzerow,Reuter,Wieck,Lorcke,Meier C_Tuning quantum-dot based photonic devices with liquid crystals.pdf","content_type":"application/pdf","file_id":"4173","creator":"hclaudia","date_created":"2018-08-28T08:52:50Z"}],"abstract":[{"lang":"eng","text":"Microdisks made from GaAs with embedded InAs quantum dots are immersed in the liquid crystal 4-cyano-4’-pentylbiphenyl (5CB). The quantum dots serve as emitters feeding the optical modes of the photonic cavity. By changing temperature, the liquid crystal undergoes a phase transition from the isotropic to the nematic state, which can be used\r\nas an effective tuning mechanism of the photonic modes of the cavity. In the nematic state, the uniaxial electrical anisotropy of the liquid crystal molecules can be exploited for orienting the material in an electric field,\r\nthus externally controlling the birefringence of the material. Using this effect, an electric field induced tuning of the modes is achieved. Numerical simulations using the finite-differences time-domain (FDTD) technique\r\nemploying an anisotropic dielectric medium allow to understand the alignment of the liquid crystal molecules on the surface of the microdisk resonator."}],"publication":"Optics Express","issue":"8","doi":"10.1364/oe.18.007946","language":[{"iso":"eng"}],"article_number":"7946","article_type":"original","intvolume":"        18","publication_status":"published","date_updated":"2025-12-16T16:44:44Z","author":[{"full_name":"Piegdon, Karoline A.","last_name":"Piegdon","first_name":"Karoline A."},{"last_name":"Declair","first_name":"Stefan","full_name":"Declair, Stefan"},{"full_name":"Förstner, Jens","last_name":"Förstner","first_name":"Jens","orcid":"0000-0001-7059-9862","id":"158"},{"full_name":"Meier, Torsten","first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344"},{"full_name":"Matthias, Heiner","last_name":"Matthias","first_name":"Heiner"},{"last_name":"Urbanski","first_name":"Martin","full_name":"Urbanski, Martin"},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"}],"publication_identifier":{"issn":["1094-4087"]},"year":"2010","title":"Tuning quantum-dot based photonic devices with liquid crystals"}]