@article{42074,
  author       = {{Ding, K. and Ren, X. and Quevedo, D. E. and Dey, S. and Shi, L.}},
  journal      = {{Automatica}},
  title        = {{{Defensive deception against reactive jamming attacks in remote state estimation}}},
  volume       = {{113}},
  year         = {{2020}},
}

@inproceedings{39404,
  author       = {{Lange, Sven and Schroder, Dominik and Hedayat, Christian and Hangmann, Christian and Otto, Thomas and Hilleringmann, Ulrich}},
  booktitle    = {{2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE}},
  publisher    = {{IEEE}},
  title        = {{{Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000}}},
  doi          = {{10.1109/emceurope48519.2020.9245697}},
  year         = {{2020}},
}

@inproceedings{39897,
  author       = {{Hilleringmann, Ulrich}},
  isbn         = {{2863322214}},
  publisher    = {{IEEE}},
  title        = {{{27th European Solid-State Device Research Conference}}},
  doi          = {{10.1109/essderc.1997}},
  year         = {{2020}},
}

@inproceedings{39413,
  author       = {{Hangmann, Christian and Hedayat, Christian and Hilleringmann, Ulrich}},
  booktitle    = {{2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)}},
  publisher    = {{IEEE}},
  title        = {{{Designing Mixed-Signal PLLs regarding Multiple Requirements taking Non-Ideal Effects into Account}}},
  doi          = {{10.1109/newcas44328.2019.8961261}},
  year         = {{2020}},
}

@inproceedings{39410,
  author       = {{Lange, Sven and Schroder, Dominik and Hedayat, Christian and Otto, Thomas and Hilleringmann, Ulrich}},
  booktitle    = {{2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)}},
  publisher    = {{IEEE}},
  title        = {{{Inductive Locating Method to Locate Miniaturized Wireless Sensors within Inhomogeneous Dielectrics}}},
  doi          = {{10.1109/newcas44328.2019.8961227}},
  year         = {{2020}},
}

@inproceedings{19502,
  author       = {{Hetkämper, Tim and Krumme, Matthias and Dreiling, Dmitrij and Claes, Leander}},
  booktitle    = {{SEFI 48th Annual Conference Proceedings - Engaging Engineering Education}},
  location     = {{Enschede}},
  pages        = {{1309--1313}},
  publisher    = {{SEFI}},
  title        = {{{A modular, scalable open-hardware platform for project-based laboratory courses in electrical engineering studies}}},
  year         = {{2020}},
}

@misc{15489,
  author       = {{Claes, Leander and Steidl, Carolin and Hetkämper, Tim and Henning, Bernd}},
  publisher    = {{Cornell University}},
  title        = {{{Estimation of acoustic wave non-linearity in ultrasonic measurement systems}}},
  doi          = {{10.48550/arXiv.2001.05708}},
  year         = {{2020}},
}

@article{59686,
  abstract     = {{The monolithic growth of III–V materials directly on Si substrates provides a promising integration approach for passive and active silicon photonic integrated circuits but still faces great challenges in crystal quality due to misfit defect formation. Nano-ridge engineering is a new approach that enables the integration of III–V based devices on trench-patterned Si substrates with very high crystal quality. Using selective area growth, the III–V material is deposited into narrow trenches to reduce the dislocation defect density by aspect ratio trapping. The growth is continued out of the trench pattern and a box-shaped III–V nano-ridge is engineered by adjusting the growth parameters. A flat (001) GaAs nano-ridge surface enables the epitaxial integration of a common InGaAs/GaAs multi-quantum-well (MQW) structure as an optical gain medium to build a laser diode. In this study, a clear correlation is found between the photoluminescence (PL) lifetime, extracted from time-resolved photoluminescence (TRPL) measurements, with the InGaAs/GaAs nano-ridge size and defect density, which are both predefined by the nano-ridge related pattern trench width. Through the addition of an InGaP passivation layer, a MQW PL lifetime of up to 800 ps and 1000 ps is measured when pumped at 900 nm (only QWs were excited) and 800 nm (QWs + barrier excited), respectively. The addition of a bottom carrier blocking layer further increases this lifetime to ∼2.5ns (pumped at 800 nm), which clearly demonstrates the high crystal quality of the nano-ridge material. These TRPL measurements not only deliver quick and valuable feedback about the III–V material quality but also provide an important understanding for the heterostructure design and carrier confinement of the nano-ridge laser diode.}},
  author       = {{Shi, Yuting and Kreuzer, Lisa C. and Gerhardt, Nils Christopher and Pantouvaki, Marianna and Van Campenhout, Joris and Baryshnikova, Marina and Langer, Robert and Van Thourhout, Dries and Kunert, Bernardette}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{10}},
  publisher    = {{AIP Publishing}},
  title        = {{{Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates}}},
  doi          = {{10.1063/1.5139636}},
  volume       = {{127}},
  year         = {{2020}},
}

@article{59685,
  abstract     = {{Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.}},
  author       = {{Žutić, Igor and Xu, Gaofeng and Lindemann, Markus and Faria Junior, Paulo E. and Lee, Jeongsu and Labinac, Velimir and Stojšić, Kristian and Sipahi, Guilherme M. and Hofmann, Martin R. and Gerhardt, Nils Christopher}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  publisher    = {{Elsevier BV}},
  title        = {{{Spin-lasers: spintronics beyond magnetoresistance}}},
  doi          = {{10.1016/j.ssc.2020.113949}},
  volume       = {{316-317}},
  year         = {{2020}},
}

@article{59684,
  abstract     = {{<jats:p>In this paper, we present a confocal laser scanning holographic microscope for the investigation of buried structures. The multimodal system combines high diffraction limited resolution and high signal-to-noise-ratio with the ability of phase acquisition. The amplitude and phase imaging capabilities of the system are shown on a test target. For the investigation of buried integrated semiconductor structures, we expand our system with an optical beam induced current modality that provides additional structure-sensitive contrast. We demonstrate the performance of the multimodal system by imaging the buried structures of a microcontroller through the silicon backside of its housing in reflection geometry.</jats:p>}},
  author       = {{Schnitzler, Lena and Neutsch, Krisztian and Schellenberg, Falk and Hofmann, Martin R. and Gerhardt, Nils Christopher}},
  issn         = {{1559-128X}},
  journal      = {{Applied Optics}},
  number       = {{4}},
  publisher    = {{Optica Publishing Group}},
  title        = {{{Confocal laser scanning holographic microscopy of buried structures}}},
  doi          = {{10.1364/ao.403687}},
  volume       = {{60}},
  year         = {{2020}},
}

@inproceedings{39405,
  author       = {{Petrov, Dmitry and Hilleringmann, Ulrich}},
  booktitle    = {{2020 IEEE SENSORS}},
  publisher    = {{IEEE}},
  title        = {{{Water-based primary cell for powering of wireless sensors}}},
  doi          = {{10.1109/sensors47125.2020.9278891}},
  year         = {{2020}},
}

@inproceedings{51848,
  author       = {{Poeplau, M. and Ester, S. and Henning, B. and Wagner, T.}},
  booktitle    = {{Tagungsband}},
  publisher    = {{AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf}},
  title        = {{{5.2.3 Zinkoxid als photostabiler Luminophor zur optischen Sauerstoffdetektion}}},
  doi          = {{10.5162/sensoren2019/5.2.3}},
  year         = {{2020}},
}

@inproceedings{20695,
  author       = {{Boeddeker, Christoph and Nakatani, Tomohiro and Kinoshita, Keisuke and Haeb-Umbach, Reinhold}},
  booktitle    = {{ICASSP 2020 - 2020 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP)}},
  isbn         = {{9781509066315}},
  title        = {{{Jointly Optimal Dereverberation and Beamforming}}},
  doi          = {{10.1109/icassp40776.2020.9054393}},
  year         = {{2020}},
}

@inproceedings{29880,
  abstract     = {{Although there are numerous design methodologies for the LLC resonant converter, they often do not consider the possibility of input voltage adjustment. In the proposed concept, a modular multi-level converter (MMC) is used to step-down the three-phase medium voltage of 10 kV, and provide up to 1 MW of pure DC power to the load consisting of electrolyzers for hydrogen generation. Therefore, each module is extended by an LLC resonant converter to adapt to the specific electrolyzers DC voltage range of 142...220 V and to provide galvanic isolation. In order to achieve a high efficiency for a wide range of load conditions, the input voltage of the LLC converter is adjusted between 600 V and 770 V while operating at resonance or close to resonance. The parameters of the 11kW LLC resonant converter with an integrated leakage inductance are systematically optimized to maximize the efficiency for all loads while achieving zero-voltage switching. For a fast estimation of eddy current losses, a new method is proposed, which uses a single FEM simulation to fit newly developed loss equations. The calculated average efficiency is 97.8%. The prototype of the LLC converter reaches a peak efficiency of over 98% at resonance at half load which is similar to the precalculated value.}},
  author       = {{Unruh, Roland and Schafmeister, Frank and Böcker, Joachim}},
  booktitle    = {{2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)}},
  keywords     = {{Full-bridge, High voltage power converters, LLC resonant converter, Multilevel converters, ZVS Converters}},
  publisher    = {{IEEE}},
  title        = {{{11kW, 70kHz LLC Converter Design with Adaptive Input Voltage for 98% Efficiency in an MMC}}},
  doi          = {{10.1109/compel49091.2020.9265771}},
  year         = {{2020}},
}

@inproceedings{39966,
  author       = {{Förstner, Jens and Widhalm, A. and Mukherjee, A. and Krehs, S. and Jonas, B. and Spychala, K. and Förstner, Jens and Thiede, Andreas and Reuter, Dirk and Zrenner, Artur}},
  booktitle    = {{11th International Conference on Quantum Dots}},
  title        = {{{Ultrafast electric control of a single QD exciton}}},
  year         = {{2020}},
}

@inproceedings{24021,
  abstract     = {{This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits both large- and small-signal bandwidth exeeding 60 GHz. It achieves an effective number of bits (ENOB) of 7 bit at 34 GHz input frequency and an ENOB of >5 bit over the whole input frequency bandwidth at sampling rate of 10 GS/s. Much higher sampling rates are possible but lead to somewhat worse performance. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 78 mA from a -4.8 V supply voltage, dissipating 375 mW.}},
  author       = {{Wu, Liang and Weizel, Maxim and Scheytt, Christoph}},
  booktitle    = {{2020 IEEE International Symposium on Circuits and Systems (ISCAS)}},
  isbn         = {{978-1-7281-3320-1}},
  issn         = {{2158-1525 }},
  publisher    = {{IEEE}},
  title        = {{{Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology}}},
  doi          = {{10.1109/ISCAS45731.2020.9180947}},
  year         = {{2020}},
}

@article{24029,
  abstract     = {{In this paper we present the system and circuit level analysis and feasibility study of applying microwave Radio Frequency Identification (RFID) systems with multipleinput multiple-output (MIMO) reader technology for tracking machining tools in multipath fading conditions of production environments. In the proposed system the MIMO reader interrogates single-antenna tags, and a high RFID frequency of 5.8 GHz is chosen to reduce the size of the reader's antenna array. According to the requirements dictated by the performed system analysis at 5.8 GHz, a low power fully integrated analog frontend (AFE) is designed and fabricated in a standard 65-nm CMOS technology for low power passive transponders. Performance of the Differential Drive Rectifier (DDR) topology as the core of the energy harvesting unit is investigated in detail. A multi-stage DDR power scavenging unit is dimensioned to provide a 1.2 V rectified voltage for 20-30 kQ load range, with a high power conversion efficiency (PCE) for high frequency and low input power level signals. The rectified voltage is then converted to a 1 V regulated voltage for the AFE and the baseband processor with 30 to 50 μW of estimated power consumption. Transistors with standard threshold voltage (VT) have been used for implementation. Measurements of the fabricated multi-stage configuration of the circuit show a maximum PCE of 68.8% at -12.46 dBm, and an input quality factor (Q-factor) of approximately 10. Amplitude-shift keying (ASK) demodulator and backscattering modulator with 80% modulation index, operating according to EPC-C1G2 protocol are applied for data transfer. The AFE consumes less than 1 μW in the reading mode. The AFE tag chip is 0.55 × 0.58 mm 2 .}},
  author       = {{Haddadian, Sanaz and Scheytt, Christoph}},
  journal      = {{IEEE Journal of Radio Frequency Identification}},
  pages        = {{1--1}},
  title        = {{{Analysis, Design and Implementation of a Fully Integrated Analog Front-End for Microwave RFIDs at 5.8 GHz to be Used with Compact MIMO Readers}}},
  doi          = {{10.1109/JRFID.2020.3009741}},
  year         = {{2020}},
}

@inproceedings{24026,
  abstract     = {{In this paper we present a new system concept for an optoelectronic wireless phased array system. Like in a conventional phased array system with optical carrier distribution, optical fibers are used to distribute the carrier from the basestation to the wireless frontends. However in contrast to prior concepts, we propose to use an optical IQ return path from the wireless frontends back to the basestation. Furthermore, we reuse the optical carrier signal for the IQ return path which allows to avoid local oscillator lasers in the wireless frontends and reduces the hardware effort significantly. The system concept allows to integrate all components of an optoelectronic wireless frontend in a single chip using silicon photonics technology.}},
  author       = {{Kruse, Stephan and Kress, Christian and Scheytt, Christoph and Kurz, Heiko G. and Schneider, Thomas}},
  booktitle    = {{GeMiC 2020 - German Microwave Conference}},
  title        = {{{Analysis and Simulation of a Wireless Phased Array System with Optical Carrier Distribution and an Optical IQ Return Path}}},
  year         = {{2020}},
}

@inproceedings{23479,
  author       = {{Weizel, Maxim and Kaertner, Franz X. and Witzens, Jeremy and Scheytt, J. Christoph}},
  booktitle    = {{Photonic Networks; 21th ITG-Symposium}},
  location     = {{Online}},
  pages        = {{1--6}},
  publisher    = {{VDE}},
  title        = {{{Photonic Analog-to-Digital-Converters – Comparison of a MZM-Sampler with an Optoelectronic Switched-Emitter-Follower Sampler}}},
  year         = {{2020}},
}

@article{23747,
  author       = {{Witte, Thomas and Hanemann, Stefan and Sommerfeld, Herbert and Temmen, Katrin and Fechner, Sabine}},
  issn         = {{0944-5846}},
  journal      = {{CHEMKON}},
  keywords     = {{digital, technology, teacher education}},
  number       = {{4}},
  pages        = {{193--198}},
  title        = {{{Selbstbau eines digitalen Low-Cost-Fotometers für den Chemieunterricht}}},
  doi          = {{10.1002/ckon.201900026}},
  volume       = {{27}},
  year         = {{2020}},
}