@article{40512,
  author       = {{Hüsing, Sven and Weiser, Niklas and Biehler, Rolf}},
  journal      = {{mathematik lehren}},
  number       = {{228}},
  pages        = {{23–27}},
  publisher    = {{Friedrich Verlag}},
  title        = {{{Faszination 3D-Film: Entwicklung einer 3D-Konstruktion}}},
  volume       = {{2021}},
  year         = {{2021}},
}

@inproceedings{40541,
  author       = {{Itner, D. and Gravenkamp, H. and Dreiling, Dmitrij and Feldmann, Nadine and Henning, Bernd}},
  booktitle    = {{14th WCCM-ECCOMAS Congress}},
  publisher    = {{CIMNE}},
  title        = {{{Simulation of Guided Waves in Cylinders Subject to Arbitrary Boundary Conditions Using the Scaled Boundary Finite Element Method}}},
  doi          = {{10.23967/wccm-eccomas.2020.307}},
  volume       = {{700}},
  year         = {{2021}},
}

@article{40673,
  author       = {{Soleymani, Mohammad and Santamaria, Ignacio and Schreier, Peter J}},
  journal      = {{IEEE Access}},
  pages        = {{96948–96963}},
  publisher    = {{IEEE}},
  title        = {{{Distributed Algorithms for Spectral and Energy-Efficiency Maximization of $K$-User Interference Channels}}},
  volume       = {{9}},
  year         = {{2021}},
}

@inproceedings{40677,
  author       = {{Soleymani, Mohammad and Santamaria, Ignacio and Maham, Behrouz and Schreier, Peter J}},
  booktitle    = {{Proc. 28th European Signal Processing Conference (EUSIPCO)}},
  pages        = {{1638–1642}},
  title        = {{{Rate Region of the $K$-user MIMO Interference Channel with Imperfect Transmitters}}},
  year         = {{2021}},
}

@inproceedings{23992,
  author       = {{Adelt, Peer and Koppelmann, Bastian and Müller, Wolfgang and Scheytt, Christoph}},
  booktitle    = {{Workshop Methoden und Beschreibungssprachen zur Modellierung und Verifikation von Schaltungen und Systemen (MBMV 2021)}},
  title        = {{{Register and Instruction Coverage Analysis for Different RISC-V ISA Modules}}},
  year         = {{2021}},
}

@article{31702,
  author       = {{Vieluf, S and Hasija, Tanuj and Schreier, PJ and El Atrache, R and Hammond, S and Mohammadpour Touserkani, F and Sarkis, RA and Loddenkemper, T and Reinsberger, Claus}},
  issn         = {{1525-5050}},
  journal      = {{Epilepsy Behav}},
  pages        = {{108321}},
  title        = {{{Generalized tonic-clonic seizures are accompanied by changes of interrelations within the autonomic nervous system.}}},
  volume       = {{124}},
  year         = {{2021}},
}

@inproceedings{29899,
  abstract     = {{LLC resonant converters are typically unsuitable to be applied for wide voltage-transfer ratio applications. With a full-bridge inverter, however, they can be operated in a variety of different modulations. Most notably, by permanently turning on one MOSFET and turning off the other MOSFET of the same bridge leg, the LLC can be operated in half-bridge configuration reducing the gain by a factor of two. The resonant capacitor is hereby charged to an average voltage of half the input voltage. In this modulation, however, the switch that is permanently turned on is stressed by the complete resonant current while exhibiting no switching losses. This paper proves that the frequency-doubler modulation can better balance the losses among all MOSFETs and should be the preferred mode of operation favored over the conventional half-bridge modulation. This paper analyzes the beneficial loss distribution, proposes an on-the-fly morphing modulation and discusses potential operating strategies to further reduce the junction temperature. Furthermore, it is shown that this modulation can also be altered to achieve the asymmetrical LLC operation. Experimental measurement results show that the modulation results in a substantial decrease of the maximum MOSFET temperature and shows that the converter can be smoothly transitioned during operation from full-bridge modulation to the frequency-doubler half-bridge operation and back.}},
  author       = {{Rehlaender, Philipp and Unruh, Roland and Hankeln, Lars and Schafmeister, Frank and Böcker, Joachim}},
  booktitle    = {{23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)}},
  isbn         = {{978-9-0758-1537-5}},
  keywords     = {{Resonant converter, High frequency power converter, Switched-mode power supply, Converter control, Control methods for electrical systems}},
  location     = {{Ghent, Belgium}},
  publisher    = {{IEEE}},
  title        = {{{Frequency-Doubler Modulation for Reduced Junction Temperatures for LLC Resonant Converters Operated in Half-Bridge Configuration}}},
  doi          = {{10.23919/EPE21ECCEEurope50061.2021.9570674}},
  year         = {{2021}},
}

@article{29780,
  abstract     = {{<jats:p>A central tenet of theoretical cryptography is the study of the minimal assumptions required to implement a given cryptographic primitive. One such primitive is the one-time memory (OTM), introduced by Goldwasser, Kalai, and Rothblum [CRYPTO 2008], which is a classical functionality modeled after a non-interactive 1-out-of-2 oblivious transfer, and which is complete for one-time classical and quantum programs. It is known that secure OTMs do not exist in the standard model in both the classical and quantum settings. Here, we propose a scheme for using quantum information, together with the assumption of stateless (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>i</mml:mi><mml:mo>.</mml:mo><mml:mi>e</mml:mi><mml:mo>.</mml:mo></mml:math>, reusable) hardware tokens, to build statistically secure OTMs. Via the semidefinite programming-based quantum games framework of Gutoski and Watrous [STOC 2007], we prove security for a malicious receiver making at most 0.114<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math> adaptive queries to the token (for <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math> the key size), in the quantum universal composability framework, but leave open the question of security against a polynomial amount of queries. Compared to alternative schemes derived from the literature on quantum money, our scheme is technologically simple since it is of the "prepare-and-measure" type. We also give two impossibility results showing certain assumptions in our scheme cannot be relaxed.</jats:p>}},
  author       = {{Broadbent, Anne and Gharibian, Sevag and Zhou, Hong-Sheng}},
  issn         = {{2521-327X}},
  journal      = {{Quantum}},
  keywords     = {{Physics and Astronomy (miscellaneous), Atomic and Molecular Physics, and Optics}},
  publisher    = {{Verein zur Forderung des Open Access Publizierens in den Quantenwissenschaften}},
  title        = {{{Towards Quantum One-Time Memories from Stateless Hardware}}},
  doi          = {{10.22331/q-2021-04-08-429}},
  volume       = {{5}},
  year         = {{2021}},
}

@article{34840,
  abstract     = {{In this paper we obtain a complete list of imaginary n-quadratic fields with class groups of exponent 3 and 5 under ERH for every positive integer n where an n-quadratic field is a number field of degree 2ⁿ represented as the composite of n quadratic fields. }},
  author       = {{Klüners, Jürgen and Komatsu, Toru}},
  issn         = {{0025-5718}},
  journal      = {{Mathematics of Computation}},
  keywords     = {{Applied Mathematics, Computational Mathematics, Algebra and Number Theory}},
  number       = {{329}},
  pages        = {{1483--1497}},
  publisher    = {{American Mathematical Society (AMS)}},
  title        = {{{Imaginary multiquadratic number fields with class group of exponent $3$ and $5$}}},
  doi          = {{10.1090/mcom/3609}},
  volume       = {{90}},
  year         = {{2021}},
}

@unpublished{29655,
  author       = {{Kirchgässner, Wilhelm and Wallscheid, Oliver and Böcker, Joachim}},
  booktitle    = {{arXiv preprint arXiv:2103.16323}},
  title        = {{{Thermal Neural Networks: Lumped-Parameter Thermal Modeling With State-Space Machine Learning}}},
  year         = {{2021}},
}

@inproceedings{39401,
  author       = {{Lange, Sven and Hedayat, Christian and Kuhn, Harald and Hilleringmann, Ulrich}},
  booktitle    = {{2021 Smart Systems Integration (SSI)}},
  publisher    = {{IEEE}},
  title        = {{{Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field}}},
  doi          = {{10.1109/ssi52265.2021.9466958}},
  year         = {{2021}},
}

@inproceedings{39384,
  author       = {{Reker, Julia and Meyers, Thorsten and Vidor, Fabio F. and Joubert, Trudi-Heleen and Hilleringmann, Ulrich}},
  booktitle    = {{2021 IEEE AFRICON}},
  publisher    = {{IEEE}},
  title        = {{{Influence of electrode metallization on thin-film transistor performance}}},
  doi          = {{10.1109/africon51333.2021.9570953}},
  year         = {{2021}},
}

@inproceedings{39392,
  author       = {{Sander, Tom and Lange, Sven and Hilleringmann, Ulrich and Geneis, Volker and Hedayat, Christian and Kuhn, Harald and Gockel, Franz-Barthold}},
  booktitle    = {{2021 22nd IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction}}},
  doi          = {{10.1109/icit46573.2021.9453646}},
  year         = {{2021}},
}

@inproceedings{39390,
  author       = {{Lange, Sven and Schroder, Dominik and Hedayat, Christian and Kuhn, Harald and Hilleringmann, Ulrich}},
  booktitle    = {{2021 22nd IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses}}},
  doi          = {{10.1109/icit46573.2021.9453609}},
  year         = {{2021}},
}

@inbook{39394,
  author       = {{Hilleringmann, Ulrich}},
  booktitle    = {{Nanostructured Zinc Oxide}},
  isbn         = {{9780128189009}},
  publisher    = {{Elsevier}},
  title        = {{{ZnO nanoparticle films as active layer for thin film transistors}}},
  doi          = {{10.1016/b978-0-12-818900-9.00013-9}},
  year         = {{2021}},
}

@inproceedings{39396,
  author       = {{Reker, Julia and Meyers, Thorsten and Vidor, Fabio F. and Joubert, Trudi-Heleen and Hilleringmann, Ulrich}},
  booktitle    = {{2021 Smart Systems Integration (SSI)}},
  publisher    = {{IEEE}},
  title        = {{{Complementary Inverter Circuits on Flexible Substrates}}},
  doi          = {{10.1109/ssi52265.2021.9466966}},
  year         = {{2021}},
}

@inproceedings{39388,
  author       = {{Reker, Julia and Meyers, Thorsten and Vidor, Fabio F. and Joubert, Trudi-Heleen and Hilleringmann, Ulrich}},
  booktitle    = {{2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}},
  publisher    = {{IEEE}},
  title        = {{{Integration Process for Self-aligned Sub-µm Thin-Film Transistors for Flexible Electronics}}},
  doi          = {{10.1109/fleps51544.2021.9469764}},
  year         = {{2021}},
}

@inproceedings{29138,
  author       = {{Ahmed, Qazi Arbab}},
  booktitle    = {{2021 IFIP/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC)}},
  title        = {{{Hardware Trojans in Reconfigurable Computing}}},
  doi          = {{10.1109/vlsi-soc53125.2021.9606974}},
  year         = {{2021}},
}

@article{39383,
  abstract     = {{<jats:p>Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.</jats:p>}},
  author       = {{Kaufmann, Ivan Rodrigo and Zerey, Onur and Meyers, Thorsten and Reker, Julia and Vidor, Fábio and Hilleringmann, Ulrich}},
  issn         = {{2079-4991}},
  journal      = {{Nanomaterials}},
  keywords     = {{General Materials Science, General Chemical Engineering}},
  number       = {{5}},
  publisher    = {{MDPI AG}},
  title        = {{{A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application}}},
  doi          = {{10.3390/nano11051188}},
  volume       = {{11}},
  year         = {{2021}},
}

@inproceedings{39395,
  author       = {{Reker, Julia and Meyers, Thorsten and Vidor, Fabio F. and Joubert, Trudi-Heleen and Hilleringmann, Ulrich}},
  booktitle    = {{2021 Smart Systems Integration (SSI)}},
  publisher    = {{IEEE}},
  title        = {{{Complementary Inverter Circuits on Flexible Substrates}}},
  doi          = {{10.1109/ssi52265.2021.9466966}},
  year         = {{2021}},
}