@inproceedings{30564,
  author       = {{Keuck, Lukas and Fröhleke, N. and Böcker, Joachim}},
  booktitle    = {{Internationaler ETG Kongress, Berlin, Germany}},
  title        = {{{Formaler Regelungsentwurf für netzfreundliche PFC-Ladegleichrichter unter Anwendung eines Netzbeobachters}}},
  year         = {{2013}},
}

@inproceedings{30556,
  author       = {{Sharabash, H. and Krishna, D.V.M.M. and Fröhleke, N. and Böcker, Joachim}},
  booktitle    = {{PCIM Europe Conference, Nürnberg, Germany}},
  title        = {{{High efficiency photovoltaic power conditioning system}}},
  year         = {{2013}},
}

@inproceedings{30553,
  author       = {{Böcker, Joachim and Buchholz, O.}},
  booktitle    = {{2013 IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{Can oversampling improve the dynamics of PWM controls?}}},
  doi          = {{10.1109/icit.2013.6505952}},
  year         = {{2013}},
}

@inproceedings{30555,
  author       = {{Solanki, J. and Krishna, D.V.M.M. and Fröhleke, N. and Wallmeier, P.}},
  booktitle    = {{PCIM Europe Conference, Nürnberg, Germany}},
  title        = {{{Comparison of Thyristor-Rectifier with Hybrid Filter and Chopper-Rectifier for High-Power, High-Current Application}}},
  year         = {{2013}},
}

@inproceedings{30571,
  author       = {{Cao, Zhiyu and Tao, Junbing and Fröhleke, Norbert and Böcker, Joachim}},
  booktitle    = {{2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)}},
  publisher    = {{IEEE}},
  title        = {{{Dynamical modeling for series-parallel resonant converter under optimized modulation}}},
  doi          = {{10.1109/apec.2013.6520481}},
  year         = {{2013}},
}

@inproceedings{30551,
  author       = {{Krishna, D. V. M. M. and Fröhleke, N. and Böcker, Joachim and Preckwinkel, H.}},
  booktitle    = {{2013 IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{A simplified mathematical model for DC-balancing and capacitor ripple reduction in 3-level inverters}}},
  doi          = {{10.1109/icit.2013.6505715}},
  year         = {{2013}},
}

@inproceedings{30561,
  author       = {{Preckwinkel, Heiko and Bünte, Andreas and Böcker, Joachim and Fröhleke, Norbert and Dora, Krishna}},
  booktitle    = {{2013 15th European Conference on Power Electronics and Applications (EPE)}},
  publisher    = {{IEEE}},
  title        = {{{A novel low cost solar central inverters topology with 99.2% efficiency}}},
  doi          = {{10.1109/epe.2013.6631769}},
  year         = {{2013}},
}

@inproceedings{30552,
  author       = {{Solanki, J. and Fröhleke, N. and Böcker, Joachim and Wallmeier, P.}},
  booktitle    = {{2013 IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{A modular multilevel converter based high-power high-current power supply}}},
  doi          = {{10.1109/icit.2013.6505713}},
  year         = {{2013}},
}

@inproceedings{30560,
  author       = {{Lönneker, Michael and Böcker, Joachim}},
  booktitle    = {{2013 15th European Conference on Power Electronics and Applications (EPE)}},
  publisher    = {{IEEE}},
  title        = {{{A novel space vector modulation strategy for thyristor matrix converters}}},
  doi          = {{10.1109/epe.2013.6631954}},
  year         = {{2013}},
}

@phdthesis{30852,
  author       = {{Romaus, C.}},
  isbn         = {{978-3-8440-2065-6}},
  title        = {{{Selbstoptimierende Betriebsstrategien für ein hybrides Energiespeichersystem aus Batterien und Doppelschichtkondensatoren}}},
  year         = {{2013}},
}

@phdthesis{30559,
  author       = {{Henke, C.}},
  title        = {{{Betriebs- und Regelstrategien für den autonomen Fahrbetrieb von Schienenfahrzeugen mit Linearmotor}}},
  year         = {{2013}},
}

@inproceedings{6914,
  author       = {{Wendlandt, Stefan and Berthold, Roman and Hanusch, Matthias and Drobisch, Alexander and Berghold, Juliane and Schoppa, Michael and Krauter, Stefan and Grunow, Paul}},
  booktitle    = {{Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, Paris (Frankreich)}},
  title        = {{{About the hot spot stability of ages silicon crystalline PV modules and materials}}},
  year         = {{2013}},
}

@inproceedings{24339,
  author       = {{Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler, Wolfgang}},
  booktitle    = {{W 06 (EuMC & EuMIC)}},
  title        = {{{mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS}}},
  year         = {{2013}},
}

@article{24344,
  abstract     = {{In this paper, a novel 180°hybrid with different input frequencies is proposed to combine RF and local oscillator (LO) signals with different frequencies in a gate/base-pumped harmonic mixer. The detailed analysis and design procedures are presented in this paper. To further reduce the chip size, the multilayer metallization above the lossy silicon substrate is employed to implement the hybrid. A V-band down-converted 2× harmonic mixer in 90-nm CMOS process and a D-band down-converted 4× harmonic mixer in the 130-nm SiGe process are designed, fabricated, and measured to verify the concept. The 2× harmonic mixer possesses 0-dB conversion gain at 60 GHz with 0-dBm LO power with merely 2.4-mW dc power. The 4× harmonic mixer achieves 0.5-dB conversion gain at 120 GHz with 2-dBm LO power and 27.3-mW dc power. With the proposed reduced-size 180° hybrid, gate/base-pumped harmonic mixers are very attractive in transceivers demanding low LO frequency and power.}},
  author       = {{Kuo, Jhe-Jia and Lien, Chun-Hsien and Tsai, Zuo-Min and Lin, Kun-You and Schmalz, Klaus and Scheytt, Christoph and Wang, Huei}},
  journal      = {{Microwave Theory and Techniques, IEEE Transactions on}},
  number       = {{8}},
  pages        = {{2473--2485}},
  title        = {{{Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input Frequencies }}},
  doi          = {{10.1109/TMTT.2012.2202039}},
  volume       = {{60}},
  year         = {{2013}},
}

@inproceedings{24343,
  abstract     = {{50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor}},
  author       = {{Scheytt, Christoph}},
  booktitle    = {{HNI-Forum September }},
  title        = {{{Nano-/Mikroelektronik als Enabler für neue Ansätze}}},
  year         = {{2013}},
}

@inproceedings{24345,
  author       = {{Scheytt, Christoph}},
  booktitle    = {{RF-MST Cluster Workshop on MEMSWAVE 2013}},
  title        = {{{RF-MST Cluster Workshop on MEMSWAVE 2013}}},
  year         = {{2013}},
}

@inproceedings{24340,
  author       = {{Scheytt, Christoph and Kraemer, Rolf and Kallfass, Ingmar}},
  booktitle    = {{W 19 (EuMC \& EuMIC)}},
  title        = {{{Strategies for Energy-Efficient 100 Gb/s Baseband}}},
  year         = {{2013}},
}

@inproceedings{24341,
  abstract     = {{This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .}},
  author       = {{Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}},
  booktitle    = {{IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}},
  title        = {{{A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }}},
  doi          = {{10.1109/BCTM.2013.6798158}},
  year         = {{2013}},
}

@inproceedings{24342,
  abstract     = {{Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.}},
  author       = {{Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}},
  booktitle    = {{24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}},
  title        = {{{122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}}},
  doi          = {{10.1109/PIMRC.2013.6666358}},
  year         = {{2013}},
}

@article{24347,
  abstract     = {{In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125}},
  author       = {{Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}},
  journal      = {{Microwave Theory and Techniques, IEEE Transactions on}},
  number       = {{5}},
  pages        = {{2185--2194}},
  title        = {{{A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}}},
  doi          = {{10.1109/TMTT.2013.2253792}},
  volume       = {{61}},
  year         = {{2013}},
}