@inproceedings{38313,
  author       = {{Zhang, HB and Abas, AF and Hidayat, A and Sandel, D and Bhandare, S and Wust, F and Milivojevic, B and Noé, Reinhold and Lapointe, M and Painchaud, Y and Guy, M}},
  booktitle    = {{Optical Transmission, Switching, and Subsystems III, Pts 1 and 2}},
  editor       = {{Tucker, RS and Chiaroni, D and Gu, W and Kitayama, KI}},
  isbn         = {{0-8194-6052-4}},
  issn         = {{0277-786X}},
  number       = {{1&2}},
  pages        = {{L210}},
  title        = {{{Tunable dispersion compensation experiment in 5.94 Tb/s WDM transmission system - art. no. 60210L}}},
  doi          = {{10.1117/12.637191}},
  volume       = {{6021}},
  year         = {{2005}},
}

@article{38305,
  author       = {{Noé, Reinhold}},
  issn         = {{1041-1135}},
  journal      = {{IEEE PHOTONICS TECHNOLOGY LETTERS}},
  number       = {{4}},
  pages        = {{887--889}},
  title        = {{{PLL-free synchronous QPSK polarization multiplex/diversity receiver concept with digital I&Q baseband processing}}},
  doi          = {{10.1109/LPT.2004.842795}},
  volume       = {{17}},
  year         = {{2005}},
}

@article{38321,
  author       = {{Noé, Reinhold}},
  issn         = {{0733-8724}},
  journal      = {{JOURNAL OF LIGHTWAVE TECHNOLOGY}},
  number       = {{2}},
  pages        = {{802--808}},
  title        = {{{Phase noise-tolerant synchronous QPSK/BPSK baseband-type intradyne receiver concept with feedforward carrier recovery}}},
  doi          = {{10.1109/JLT.2004.838818}},
  volume       = {{23}},
  year         = {{2005}},
}

@article{38443,
  author       = {{Bhandare, S and Ibrahim, SK and Sandel, D and Zhang, HB and Wust, F and Noé, Reinhold}},
  issn         = {{1077-260X}},
  journal      = {{IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS}},
  number       = {{2}},
  pages        = {{417--421}},
  title        = {{{Novel nonmagnetic 30-dB traveling-wave single-sideband optical isolator integrated in III/V material}}},
  doi          = {{10.1109/JSTQE.2005.845620}},
  volume       = {{11}},
  year         = {{2005}},
}

@article{38371,
  author       = {{Noé, Reinhold}},
  issn         = {{0733-8724}},
  journal      = {{JOURNAL OF LIGHTWAVE TECHNOLOGY}},
  number       = {{2}},
  pages        = {{802--808}},
  title        = {{{Phase noise-tolerant synchronous QPSK/BPSK baseband-type intradyne receiver concept with feedforward carrier recovery}}},
  doi          = {{10.1109/JLT.2004.838818}},
  volume       = {{23}},
  year         = {{2005}},
}

@article{39951,
  author       = {{Rösler, Margit and Rauhut, Holger}},
  issn         = {{0176-4276}},
  journal      = {{Constructive Approximation}},
  keywords     = {{Computational Mathematics, General Mathematics, Analysis}},
  number       = {{2}},
  pages        = {{193--218}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Radial Multiresolution in Dimension Three}}},
  doi          = {{10.1007/s00365-004-0587-0}},
  volume       = {{22}},
  year         = {{2005}},
}

@inproceedings{39949,
  author       = {{Rösler, Margit and VOIT, MICHAEL}},
  booktitle    = {{Infinite Dimensional Harmonic Analysis III}},
  pages        = {{ 249–264}},
  publisher    = {{World Scientific Publ.}},
  title        = {{{Deformations of convolution semigroups on commutative hypergroups}}},
  doi          = {{10.1142/9789812701503_0016}},
  year         = {{2005}},
}

@article{40896,
  abstract     = {{Nonstationary complex random signals are in general improper (not circularly symmetric), which means that their complementary covariance is nonzero. Since the Karhunen-Loeve (K-L) expansion in its known form is only valid for proper processes, we derive the improper version of this expansion. It produces two sets of eigenvalues and improper observable coordinates. We then use the K-L expansion to solve the problems of detection and estimation of improper complex random signals in additive white Gaussian noise. We derive a general result comparing the performance of conventional processing, which ignores complementary covariances, with processing that takes these into account. In particular, for the detection and estimation problems considered, we find that the performance gain, as measured by deflection and mean-squared error (MSE), respectively, can be as large as a factor of 2. In a communications example, we show how this finding generalizes the result that coherent processing enjoys a 3-dB gain over noncoherent processing.}},
  author       = {{Schreier, Peter J. and Scharf, Louis L. and Mullis, Clifford T.}},
  journal      = {{IEEE Trans.\ Inform.\ Theory}},
  number       = {{1}},
  pages        = {{306–312}},
  title        = {{{Detection and estimation of improper complex random signals}}},
  doi          = {{10.1109/TIT.2004.839538}},
  volume       = {{51}},
  year         = {{2005}},
}

@article{40894,
  abstract     = {{The Rihaczek distribution for stochastic signals is a time- and frequency-shift covariant bilinear time-frequency distribution (TFD) based on the Crame acute;r-Loe grave;ve spectral representation for a harmonizable process. It is a complex Hilbert space inner product (or cross correlation) between the time series and its infinitesimal stochastic Fourier generator. To this inner product, we may attach an illuminating geometry, wherein the cosine squared of the angle between the time series and its infinitesimal stochastic Fourier generator is given by the Rihaczek distribution. The Rihaczek distribution also determines a time-varying Wiener filter for estimating a time series from its infinitesimal stochastic Fourier generator and measures the resulting error covariance. We propose a factored kernel to construct estimators of the Rihaczek distribution that are contained in Cohen’s class of bilinear TFDs.}},
  author       = {{Scharf, Louis L. and Schreier, Peter J. and Hanssen, Alfred}},
  journal      = {{IEEE Signal Process.\ Lett.}},
  number       = {{4}},
  pages        = {{297–300}},
  title        = {{{The Hilbert space geometry of the Rihaczek distribution for stochastic analytic signals}}},
  doi          = {{10.1109/LSP.2005.843772}},
  volume       = {{12}},
  year         = {{2005}},
}

@inproceedings{40893,
  abstract     = {{Based on the Cramer-Loeve spectral representation for a harmonizable random process, the Rihaczek distribution is a time- and frequency-shift covariant, bilinear time-frequency distribution. It can be expressed as a complex Hilbert space inner product between the time series and its infinitesimal stochastic Fourier generator. We show that we may attach an illuminating geometry to this inner product, wherein the cosine-squared of the angle between the time series and its infinitesimal stochastic Fourier generator is given by the Rihaczek distribution. We propose to construct estimators of the Rihaczek distribution using a factored kernel in Cohen’s class of bilinear time-frequency distributions}},
  author       = {{Schreier, Peter J. and Scharf, Louis L. and Hanssen, Alfred}},
  booktitle    = {{Proc.\ IEEE Int.\ Symp.\ Inform.\ Theory}},
  pages        = {{966–969}},
  title        = {{{A geometric interpretation of the Rihaczek time-frequency distribution for stochastic signals}}},
  doi          = {{10.1109/ISIT.2005.1523481}},
  year         = {{2005}},
}

@inproceedings{40895,
  abstract     = {{There are two types of aliasing in higher order spectra: “regular aliasing” due to sampling below the Nyquist frequency, and “higher order aliasing”. Spectra of discrete-time signals may suffer from higher-order aliasing if the signals are not sufficiently oversampled. By providing some insight into the cause of higher order aliasing, we show that higher order aliasing can just as well occur in second order spectra. More importantly, we demonstrate that spectra of stationary random signals defined as ensemble-averages and spectra of ergodic random signals defined as the Fourier transform of infinite time-averages never exhibit higher order aliasing}},
  author       = {{Schreier, Peter J.}},
  booktitle    = {{Proc. 6th\ Australian Comm.\ Theory Works.}},
  pages        = {{184–188}},
  title        = {{{A note on aliasing in higher order spectra}}},
  doi          = {{10.1109/AUSCTW.2005.1624249}},
  year         = {{2005}},
}

@article{34894,
  abstract     = {{In this Note we give a counter example to a conjecture of Malle which predicts the asymptotic behavior of the counting functions for field extensions with given Galois group and bounded discriminant. }},
  author       = {{Klüners, Jürgen}},
  issn         = {{1631-073X}},
  journal      = {{Comptes Rendus Mathematique}},
  keywords     = {{General Mathematics}},
  number       = {{6}},
  pages        = {{411--414}},
  publisher    = {{Elsevier BV}},
  title        = {{{A counter example to Malle's conjecture on the asymptotics of discriminants}}},
  doi          = {{10.1016/j.crma.2005.02.010}},
  volume       = {{340}},
  year         = {{2005}},
}

@article{34893,
  abstract     = {{Let K be a global field and O be an order of K. We develop algorithms for the computation of the unit group of residue class rings for ideals O in . As an application we show how to compute the unit group and the Picard group of O provided that we are able to compute the unit group and class group of the maximal order O of K.}},
  author       = {{Klüners, Jürgen and Pauli, Sebastian}},
  issn         = {{0021-8693}},
  journal      = {{Journal of Algebra}},
  keywords     = {{Algebra and Number Theory}},
  number       = {{1}},
  pages        = {{47--64}},
  publisher    = {{Elsevier BV}},
  title        = {{{Computing residue class rings and Picard groups of orders}}},
  doi          = {{10.1016/j.jalgebra.2005.04.013}},
  volume       = {{292}},
  year         = {{2005}},
}

@article{39846,
  abstract     = {{<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>}},
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0884-2914}},
  journal      = {{Journal of Materials Research}},
  keywords     = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
  number       = {{7}},
  pages        = {{1999--2002}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Degradation of organic field-effect transistors made of pentacene}}},
  doi          = {{10.1557/jmr.2004.0267}},
  volume       = {{19}},
  year         = {{2005}},
}

@inproceedings{39848,
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  booktitle    = {{Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.}},
  publisher    = {{IEEE}},
  title        = {{{On the degradation of organic field-effect transistors}}},
  doi          = {{10.1109/icm.2004.1434210}},
  year         = {{2005}},
}

@article{39349,
  abstract     = {{<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>}},
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0884-2914}},
  journal      = {{Journal of Materials Research}},
  keywords     = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
  number       = {{7}},
  pages        = {{1999--2002}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Degradation of organic field-effect transistors made of pentacene}}},
  doi          = {{10.1557/jmr.2004.0267}},
  volume       = {{19}},
  year         = {{2005}},
}

@article{39574,
  author       = {{Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  keywords     = {{Physics and Astronomy (miscellaneous)}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}}},
  doi          = {{10.1063/1.1849845}},
  volume       = {{86}},
  year         = {{2005}},
}

@inproceedings{39835,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@inproceedings{39834,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@misc{42807,
  author       = {{Klüners, Jürgen}},
  isbn         = {{978-3-8322-4003-5}},
  pages        = {{114}},
  publisher    = {{Shaker Verlag}},
  title        = {{{Über die Asymptotik von Zahlkörpern mit vorgegebener Galoisgruppe (Habilitation)}}},
  year         = {{2005}},
}