[{"type":"journal_article","publication":"ELECTRONICS LETTERS","status":"public","user_id":"14931","department":[{"_id":"56"}],"_id":"38290","language":[{"iso":"eng"}],"issue":"17","publication_identifier":{"issn":["0013-5194"]},"citation":{"apa":"Sandel, D., Mirvoda, V., Wust, F., Noé, R., &#38; Weiske, C. (2002). Signed online chromatic dispersion detection at 40 Gbit/s based on arrival time detection with 60 attosecond dynamic accuracy. <i>ELECTRONICS LETTERS</i>, <i>38</i>(17), 984–986. <a href=\"https://doi.org/10.1049/el:20020677\">https://doi.org/10.1049/el:20020677</a>","mla":"Sandel, D., et al. “Signed Online Chromatic Dispersion Detection at 40 Gbit/s Based on Arrival Time Detection with 60 Attosecond Dynamic Accuracy.” <i>ELECTRONICS LETTERS</i>, vol. 38, no. 17, 2002, pp. 984–86, doi:<a href=\"https://doi.org/10.1049/el:20020677\">10.1049/el:20020677</a>.","bibtex":"@article{Sandel_Mirvoda_Wust_Noé_Weiske_2002, title={Signed online chromatic dispersion detection at 40 Gbit/s based on arrival time detection with 60 attosecond dynamic accuracy}, volume={38}, DOI={<a href=\"https://doi.org/10.1049/el:20020677\">10.1049/el:20020677</a>}, number={17}, journal={ELECTRONICS LETTERS}, author={Sandel, D and Mirvoda, V and Wust, F and Noé, Reinhold and Weiske, CJ}, year={2002}, pages={984–986} }","short":"D. Sandel, V. Mirvoda, F. Wust, R. Noé, C. Weiske, ELECTRONICS LETTERS 38 (2002) 984–986.","ama":"Sandel D, Mirvoda V, Wust F, Noé R, Weiske C. Signed online chromatic dispersion detection at 40 Gbit/s based on arrival time detection with 60 attosecond dynamic accuracy. <i>ELECTRONICS LETTERS</i>. 2002;38(17):984-986. doi:<a href=\"https://doi.org/10.1049/el:20020677\">10.1049/el:20020677</a>","chicago":"Sandel, D, V Mirvoda, F Wust, Reinhold Noé, and CJ Weiske. “Signed Online Chromatic Dispersion Detection at 40 Gbit/s Based on Arrival Time Detection with 60 Attosecond Dynamic Accuracy.” <i>ELECTRONICS LETTERS</i> 38, no. 17 (2002): 984–86. <a href=\"https://doi.org/10.1049/el:20020677\">https://doi.org/10.1049/el:20020677</a>.","ieee":"D. Sandel, V. Mirvoda, F. Wust, R. Noé, and C. Weiske, “Signed online chromatic dispersion detection at 40 Gbit/s based on arrival time detection with 60 attosecond dynamic accuracy,” <i>ELECTRONICS LETTERS</i>, vol. 38, no. 17, pp. 984–986, 2002, doi: <a href=\"https://doi.org/10.1049/el:20020677\">10.1049/el:20020677</a>."},"page":"984-986","intvolume":"        38","year":"2002","author":[{"last_name":"Sandel","full_name":"Sandel, D","first_name":"D"},{"full_name":"Mirvoda, V","last_name":"Mirvoda","first_name":"V"},{"first_name":"F","last_name":"Wust","full_name":"Wust, F"},{"full_name":"Noé, Reinhold","id":"381","last_name":"Noé","orcid":"https://orcid.org/0000-0002-5839-7616","first_name":"Reinhold"},{"last_name":"Weiske","full_name":"Weiske, CJ","first_name":"CJ"}],"date_created":"2023-01-23T18:11:11Z","volume":38,"date_updated":"2023-01-25T22:57:19Z","doi":"10.1049/el:20020677","title":"Signed online chromatic dispersion detection at 40 Gbit/s based on arrival time detection with 60 attosecond dynamic accuracy"},{"date_created":"2023-01-24T10:10:24Z","author":[{"id":"16243","full_name":"Müller, Wolfgang","last_name":"Müller","first_name":"Wolfgang"},{"full_name":"Dömer, Rainer","last_name":"Dömer","first_name":"Rainer"},{"first_name":"Andreas","full_name":"Gerstlauer, Andreas","last_name":"Gerstlauer"}],"date_updated":"2023-01-24T10:10:28Z","doi":"10.1145/581199.581234 ","title":"The Formal Execution Semantics of SpecC","publication_identifier":{"isbn":["1-58113-576-9"]},"citation":{"bibtex":"@inproceedings{Müller_Dömer_Gerstlauer_2002, place={Nagoya, Japan}, title={The Formal Execution Semantics of SpecC}, DOI={<a href=\"https://doi.org/10.1145/581199.581234 \">10.1145/581199.581234 </a>}, booktitle={Proceedings of the ISSS02}, author={Müller, Wolfgang and Dömer, Rainer and Gerstlauer, Andreas}, year={2002} }","mla":"Müller, Wolfgang, et al. “The Formal Execution Semantics of SpecC.” <i>Proceedings of the ISSS02</i>, 2002, doi:<a href=\"https://doi.org/10.1145/581199.581234 \">10.1145/581199.581234 </a>.","short":"W. Müller, R. Dömer, A. Gerstlauer, in: Proceedings of the ISSS02, Nagoya, Japan, 2002.","apa":"Müller, W., Dömer, R., &#38; Gerstlauer, A. (2002). The Formal Execution Semantics of SpecC. <i>Proceedings of the ISSS02</i>. <a href=\"https://doi.org/10.1145/581199.581234 \">https://doi.org/10.1145/581199.581234 </a>","ama":"Müller W, Dömer R, Gerstlauer A. The Formal Execution Semantics of SpecC. In: <i>Proceedings of the ISSS02</i>. ; 2002. doi:<a href=\"https://doi.org/10.1145/581199.581234 \">10.1145/581199.581234 </a>","ieee":"W. Müller, R. Dömer, and A. Gerstlauer, “The Formal Execution Semantics of SpecC,” 2002, doi: <a href=\"https://doi.org/10.1145/581199.581234 \">10.1145/581199.581234 </a>.","chicago":"Müller, Wolfgang, Rainer Dömer, and Andreas Gerstlauer. “The Formal Execution Semantics of SpecC.” In <i>Proceedings of the ISSS02</i>. Nagoya, Japan, 2002. <a href=\"https://doi.org/10.1145/581199.581234 \">https://doi.org/10.1145/581199.581234 </a>."},"place":"Nagoya, Japan","year":"2002","user_id":"5786","department":[{"_id":"672"}],"_id":"39382","language":[{"iso":"eng"}],"keyword":["Standardization","Kernel","Permission","Formal verification","Logic functions","Documentation","Reasoning about programs","Specification languages","Formal specifications","Software systems"],"type":"conference","publication":"Proceedings of the ISSS02","status":"public","abstract":[{"lang":"eng","text":"We present a rigorous but transparent semantics definition of the SpecC language that covers the execution of SpecC behaviors and their interaction with the kernel process. The semantics include wait, wait for, par, and try statements as they are introduced in SpecC. We present our definition in form of distributed abstract state machine (ASM) rules strictly following the lines of the SpecC Language Reference Manual. We mainly see our formal semantics in three application areas. First, it is a concise, unambiguous description for documentation and standardization. Second, it applies as a high-level, pseudo code-oriented specification for the implementation of a SpecC simulator. Finally, it is a first step for SpecC synthesis in order to identify similar concepts with other languages like VHDL and SystemC for the definition of common patterns and language subsets."}]},{"title":"Comparing Transcoding Tools for Use with a Generic User Interface Format","date_updated":"2023-01-24T10:12:45Z","date_created":"2023-01-24T10:12:41Z","author":[{"first_name":"Johan","last_name":"Plomp","full_name":"Plomp, Johan"},{"first_name":"Robbie","full_name":"Schäfer, Robbie","last_name":"Schäfer"},{"first_name":"Wolfgang","last_name":"Müller","id":"16243","full_name":"Müller, Wolfgang"}],"place":"Montreal, Canada","year":"2002","citation":{"bibtex":"@inproceedings{Plomp_Schäfer_Müller_2002, place={Montreal, Canada}, title={Comparing Transcoding Tools for Use with a Generic User Interface Format}, booktitle={Proceedings of the Extreme Markup Languages 2002}, author={Plomp, Johan and Schäfer, Robbie and Müller, Wolfgang}, year={2002} }","short":"J. Plomp, R. Schäfer, W. Müller, in: Proceedings of the Extreme Markup Languages 2002, Montreal, Canada, 2002.","mla":"Plomp, Johan, et al. “Comparing Transcoding Tools for Use with a Generic User Interface Format.” <i>Proceedings of the Extreme Markup Languages 2002</i>, 2002.","apa":"Plomp, J., Schäfer, R., &#38; Müller, W. (2002). Comparing Transcoding Tools for Use with a Generic User Interface Format. <i>Proceedings of the Extreme Markup Languages 2002</i>.","chicago":"Plomp, Johan, Robbie Schäfer, and Wolfgang Müller. “Comparing Transcoding Tools for Use with a Generic User Interface Format.” In <i>Proceedings of the Extreme Markup Languages 2002</i>. Montreal, Canada, 2002.","ieee":"J. Plomp, R. Schäfer, and W. Müller, “Comparing Transcoding Tools for Use with a Generic User Interface Format,” 2002.","ama":"Plomp J, Schäfer R, Müller W. Comparing Transcoding Tools for Use with a Generic User Interface Format. In: <i>Proceedings of the Extreme Markup Languages 2002</i>. ; 2002."},"language":[{"iso":"eng"}],"_id":"39387","user_id":"5786","department":[{"_id":"672"}],"abstract":[{"lang":"eng","text":"This paper compares the use of three different approaches to transcoding of XML [Extensible Markup Language]-based user interface descriptions to other target formats. The source is the interface section of the XML-based markup language for user interfaces, UIML [User Interface Markup Language], which has been extended with a vocabulary for the description of generic user interfaces. Target formats used as examples for the comparison are HTML [Hypertext Markup Language], and VoiceXML. The compared means for transcoding are XSLT [Extensible Stylesheet Language Transformation], the UIML peers section with enhancements for transcoding, and RDL/TT [Rule Description Language for Tree Transformation], a Java-like transcoding language. Rendered by www.RenderX.com Comparing Transcoding Tools for Use with a Generic User Interface Format."}],"status":"public","type":"conference","publication":"Proceedings of the Extreme Markup Languages 2002"},{"citation":{"ama":"Flake S, Müller W. Specification of Real-Time Properties for UML Models. In: <i>Proceedings of HICSS-35</i>. ; 2002. doi:<a href=\"https://doi.org/10.1109/HICSS.2002.994469\">10.1109/HICSS.2002.994469</a>","chicago":"Flake, Stephan, and Wolfgang Müller. “Specification of Real-Time Properties for UML Models.” In <i>Proceedings of HICSS-35</i>. Big Island, HI, USA , 2002. <a href=\"https://doi.org/10.1109/HICSS.2002.994469\">https://doi.org/10.1109/HICSS.2002.994469</a>.","ieee":"S. Flake and W. Müller, “Specification of Real-Time Properties for UML Models,” presented at the Proceedings of the 35th Annual Hawaii International Conference on System Sciences, Big Island, HI, USA , 2002, doi: <a href=\"https://doi.org/10.1109/HICSS.2002.994469\">10.1109/HICSS.2002.994469</a>.","apa":"Flake, S., &#38; Müller, W. (2002). Specification of Real-Time Properties for UML Models. <i>Proceedings of HICSS-35</i>. Proceedings of the 35th Annual Hawaii International Conference on System Sciences, Big Island, HI, USA . <a href=\"https://doi.org/10.1109/HICSS.2002.994469\">https://doi.org/10.1109/HICSS.2002.994469</a>","bibtex":"@inproceedings{Flake_Müller_2002, place={Big Island, HI, USA }, title={Specification of Real-Time Properties for UML Models}, DOI={<a href=\"https://doi.org/10.1109/HICSS.2002.994469\">10.1109/HICSS.2002.994469</a>}, booktitle={Proceedings of HICSS-35}, author={Flake, Stephan and Müller, Wolfgang}, year={2002} }","mla":"Flake, Stephan, and Wolfgang Müller. “Specification of Real-Time Properties for UML Models.” <i>Proceedings of HICSS-35</i>, 2002, doi:<a href=\"https://doi.org/10.1109/HICSS.2002.994469\">10.1109/HICSS.2002.994469</a>.","short":"S. Flake, W. Müller, in: Proceedings of HICSS-35, Big Island, HI, USA , 2002."},"place":"Big Island, HI, USA ","year":"2002","publication_identifier":{"isbn":["0-7695-1435-9"]},"conference":{"name":"Proceedings of the 35th Annual Hawaii International Conference on System Sciences","location":"Big Island, HI, USA "},"doi":"10.1109/HICSS.2002.994469","title":"Specification of Real-Time Properties for UML Models","date_created":"2023-01-24T10:22:12Z","author":[{"full_name":"Flake, Stephan","last_name":"Flake","first_name":"Stephan"},{"last_name":"Müller","id":"16243","full_name":"Müller, Wolfgang","first_name":"Wolfgang"}],"date_updated":"2023-01-24T10:22:16Z","status":"public","abstract":[{"text":"The Unified Modeling Language (UML) has received wide acceptance as a standard language in the field of software specification by means of different diagram types. In a recent version of UML, the textual Object Constraint Language (OCL) was introduced to support specification of constraints for UML models. But OCL currently does not provide sufficient means to specify constraints over the dynamic behavior of a model. This article presents an OCL extension that is consistent with current OCL and enables modelers to specify state-related time-bounded constraints. We consider the case study of a flexible manufacturing system and identify typical real-time constraints. The constraints are presented in our temporal OCL extension as well as in temporal logic formulae. For general application, we define a semantics of our OCL extension by means of a time-bounded temporal logic based on Computational Tree Logic (CTL).","lang":"eng"}],"type":"conference","publication":"Proceedings of HICSS-35","language":[{"iso":"eng"}],"keyword":["Unified modeling language","Logic","Formal verification","Real time systems","Programming profession","Vehicle dynamics","Software standards","Flexible manufacturing systems","Electronics industry","Protocols"],"user_id":"5786","department":[{"_id":"672"}],"_id":"39403"},{"title":"Temporale Erweiterungen der OCL - Überblick und Aussichten","date_updated":"2023-01-24T10:20:03Z","date_created":"2023-01-24T10:19:57Z","author":[{"first_name":"Stephan","full_name":"Flake, Stephan","last_name":"Flake"},{"last_name":"Müller","id":"16243","full_name":"Müller, Wolfgang","first_name":"Wolfgang"}],"place":"Halle(Saale), Germany","year":"2002","citation":{"ieee":"S. Flake and W. Müller, “Temporale Erweiterungen der OCL - Überblick und Aussichten.” Halle(Saale), Germany, 2002.","chicago":"Flake, Stephan, and Wolfgang Müller. “Temporale Erweiterungen Der OCL - Überblick Und Aussichten.” Tagungsband: 2. Workshop “Ablaufmodellierung in Ingenieurwissenschaftlichen Anwendungen.” Halle(Saale), Germany, 2002.","ama":"Flake S, Müller W. Temporale Erweiterungen der OCL - Überblick und Aussichten. Published online 2002.","apa":"Flake, S., &#38; Müller, W. (2002). <i>Temporale Erweiterungen der OCL - Überblick und Aussichten</i>.","short":"S. Flake, W. Müller, (2002).","mla":"Flake, Stephan, and Wolfgang Müller. <i>Temporale Erweiterungen Der OCL - Überblick Und Aussichten</i>. 2002.","bibtex":"@article{Flake_Müller_2002, place={Halle(Saale), Germany}, series={Tagungsband: 2. Workshop “Ablaufmodellierung in ingenieurwissenschaftlichen Anwendungen”}, title={Temporale Erweiterungen der OCL - Überblick und Aussichten}, author={Flake, Stephan and Müller, Wolfgang}, year={2002}, collection={Tagungsband: 2. Workshop “Ablaufmodellierung in ingenieurwissenschaftlichen Anwendungen”} }"},"language":[{"iso":"eng"}],"_id":"39402","user_id":"5786","series_title":"Tagungsband: 2. Workshop \"Ablaufmodellierung in ingenieurwissenschaftlichen Anwendungen\"","department":[{"_id":"672"}],"abstract":[{"text":"Die Object Constraint Language (OCL) wurde entwickelt, um Modelleinschränkungen beim objektorientierten Softwareentwurf mit der UML [14] ausdrücken zu können. Sie wird hauptsächlich benutzt, um Invarianten für Objekte sowie Vor-und Nachbedingungen von Operationen zu spezifizieren. Zurzeit bieten OCL und Echtzeiterweiterungen der UML nur bedingt geeignete Mittel, um temporale zeitbehaftete Modelleigenschaften zu beschreiben. Insbesondere kann man mit OCL keine Einschränkunge uber das dynamische Verhalten eines UML-Modells formulieren, die die Reihenfolge von Objektzuständen und Zustandsübergängen betreffen. Um ein korrektes Systemverhalten zu garantieren, ist es jedoch insbesondere bei zeitkritischen Anwendungen notwendig, solche zustandsbasierten zeitbehafteten Einschränkungen in einer formalen Art und Weise ausdrücken zu können. Es sind daher verschiedene Vorschläge veröffentlicht worden, in denen die OCL erweitert worden ist, um Modellierern die Möglichkeit zu geben, temporale Einschränkungen zu formulieren. Dieser Artikel gibt eine Überblick über die zurzeit bekannten Vorschläge und zeigt Ansätze für weitere Entwicklungen in diesem Bereich auf.","lang":"eng"}],"status":"public","type":"conference"},{"language":[{"iso":"eng"}],"department":[{"_id":"56"}],"user_id":"14931","_id":"38367","status":"public","publication":"ELECTRICAL ENGINEERING","type":"journal_article","doi":"10.1007/S00202-001-0112-4","title":"Linear detection of optical polarization mode dispersion by arrival time modulation","volume":84,"date_created":"2023-01-23T18:17:15Z","author":[{"first_name":"V","last_name":"Mirvoda","full_name":"Mirvoda, V"},{"first_name":"D","last_name":"Sandel","full_name":"Sandel, D"},{"last_name":"Wust","full_name":"Wust, F","first_name":"F"},{"first_name":"S","full_name":"Hinz, S","last_name":"Hinz"},{"first_name":"Reinhold","id":"381","full_name":"Noé, Reinhold","last_name":"Noé","orcid":"https://orcid.org/0000-0002-5839-7616"}],"date_updated":"2023-01-25T16:23:05Z","intvolume":"        84","page":"71-73","citation":{"chicago":"Mirvoda, V, D Sandel, F Wust, S Hinz, and Reinhold Noé. “Linear Detection of Optical Polarization Mode Dispersion by Arrival Time Modulation.” <i>ELECTRICAL ENGINEERING</i> 84, no. 2 (2002): 71–73. <a href=\"https://doi.org/10.1007/S00202-001-0112-4\">https://doi.org/10.1007/S00202-001-0112-4</a>.","ieee":"V. Mirvoda, D. Sandel, F. Wust, S. Hinz, and R. Noé, “Linear detection of optical polarization mode dispersion by arrival time modulation,” <i>ELECTRICAL ENGINEERING</i>, vol. 84, no. 2, pp. 71–73, 2002, doi: <a href=\"https://doi.org/10.1007/S00202-001-0112-4\">10.1007/S00202-001-0112-4</a>.","ama":"Mirvoda V, Sandel D, Wust F, Hinz S, Noé R. Linear detection of optical polarization mode dispersion by arrival time modulation. <i>ELECTRICAL ENGINEERING</i>. 2002;84(2):71-73. doi:<a href=\"https://doi.org/10.1007/S00202-001-0112-4\">10.1007/S00202-001-0112-4</a>","apa":"Mirvoda, V., Sandel, D., Wust, F., Hinz, S., &#38; Noé, R. (2002). Linear detection of optical polarization mode dispersion by arrival time modulation. <i>ELECTRICAL ENGINEERING</i>, <i>84</i>(2), 71–73. <a href=\"https://doi.org/10.1007/S00202-001-0112-4\">https://doi.org/10.1007/S00202-001-0112-4</a>","mla":"Mirvoda, V., et al. “Linear Detection of Optical Polarization Mode Dispersion by Arrival Time Modulation.” <i>ELECTRICAL ENGINEERING</i>, vol. 84, no. 2, 2002, pp. 71–73, doi:<a href=\"https://doi.org/10.1007/S00202-001-0112-4\">10.1007/S00202-001-0112-4</a>.","short":"V. Mirvoda, D. Sandel, F. Wust, S. Hinz, R. Noé, ELECTRICAL ENGINEERING 84 (2002) 71–73.","bibtex":"@article{Mirvoda_Sandel_Wust_Hinz_Noé_2002, title={Linear detection of optical polarization mode dispersion by arrival time modulation}, volume={84}, DOI={<a href=\"https://doi.org/10.1007/S00202-001-0112-4\">10.1007/S00202-001-0112-4</a>}, number={2}, journal={ELECTRICAL ENGINEERING}, author={Mirvoda, V and Sandel, D and Wust, F and Hinz, S and Noé, Reinhold}, year={2002}, pages={71–73} }"},"year":"2002","issue":"2","publication_identifier":{"issn":["0948-7921"]}},{"status":"public","type":"journal_article","publication":"Journal of Approximation Theory","keyword":["Applied Mathematics","General Mathematics","Numerical Analysis","Analysis"],"language":[{"iso":"eng"}],"extern":"1","_id":"39959","user_id":"93826","department":[{"_id":"555"}],"year":"2002","citation":{"ama":"Rösler M, de Jeu M. Asymptotic Analysis for the Dunkl Kernel. <i>Journal of Approximation Theory</i>. 2002;119(1):110-126. doi:<a href=\"https://doi.org/10.1006/jath.2002.3722\">10.1006/jath.2002.3722</a>","chicago":"Rösler, Margit, and Marcel de Jeu. “Asymptotic Analysis for the Dunkl Kernel.” <i>Journal of Approximation Theory</i> 119, no. 1 (2002): 110–26. <a href=\"https://doi.org/10.1006/jath.2002.3722\">https://doi.org/10.1006/jath.2002.3722</a>.","ieee":"M. Rösler and M. de Jeu, “Asymptotic Analysis for the Dunkl Kernel,” <i>Journal of Approximation Theory</i>, vol. 119, no. 1, pp. 110–126, 2002, doi: <a href=\"https://doi.org/10.1006/jath.2002.3722\">10.1006/jath.2002.3722</a>.","mla":"Rösler, Margit, and Marcel de Jeu. “Asymptotic Analysis for the Dunkl Kernel.” <i>Journal of Approximation Theory</i>, vol. 119, no. 1, Elsevier BV, 2002, pp. 110–26, doi:<a href=\"https://doi.org/10.1006/jath.2002.3722\">10.1006/jath.2002.3722</a>.","bibtex":"@article{Rösler_de Jeu_2002, title={Asymptotic Analysis for the Dunkl Kernel}, volume={119}, DOI={<a href=\"https://doi.org/10.1006/jath.2002.3722\">10.1006/jath.2002.3722</a>}, number={1}, journal={Journal of Approximation Theory}, publisher={Elsevier BV}, author={Rösler, Margit and de Jeu, Marcel}, year={2002}, pages={110–126} }","short":"M. Rösler, M. de Jeu, Journal of Approximation Theory 119 (2002) 110–126.","apa":"Rösler, M., &#38; de Jeu, M. (2002). Asymptotic Analysis for the Dunkl Kernel. <i>Journal of Approximation Theory</i>, <i>119</i>(1), 110–126. <a href=\"https://doi.org/10.1006/jath.2002.3722\">https://doi.org/10.1006/jath.2002.3722</a>"},"intvolume":"       119","page":"110-126","publication_status":"published","publication_identifier":{"issn":["0021-9045"]},"issue":"1","title":"Asymptotic Analysis for the Dunkl Kernel","doi":"10.1006/jath.2002.3722","date_updated":"2023-01-26T17:44:02Z","publisher":"Elsevier BV","author":[{"first_name":"Margit","last_name":"Rösler","full_name":"Rösler, Margit","id":"37390"},{"first_name":"Marcel","full_name":"de Jeu, Marcel","last_name":"de Jeu"}],"date_created":"2023-01-25T10:20:13Z","volume":119},{"publication":"Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers","type":"conference","abstract":[{"lang":"eng","text":"The analytic signal is commonly used in stochastic time-frequency analysis in Cohen’s class to reduce interference terms. However, we show that the usual time-frequency representation (TFR) based on the analytic signal gives only an incomplete signal description. This is because the analytic signal constructed from a non-stationary real signal is in general improper, which means that it has non-zero complementary correlation. We show how to augment the standard TFR by a complementary TFR to obtain a complete second-order characterization of the signal while still reducing interference terms compared to the TFR of the real signal."}],"status":"public","_id":"40905","department":[{"_id":"263"}],"user_id":"43497","year":"2002","intvolume":"         2","page":"1565–1570","citation":{"apa":"Schreier, P. J., &#38; Scharf, L. L. (2002). Reducing interference in stochastic time-frequency analysis without losing information. <i>Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers</i>, <i>2</i>, 1565–1570. <a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">https://doi.org/10.1109/ACSSC.2002.1197041</a>","mla":"Schreier, Peter J., and Louis L. Scharf. “Reducing Interference in Stochastic Time-Frequency Analysis without Losing Information.” <i>Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers</i>, vol. 2, 2002, pp. 1565–1570, doi:<a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">10.1109/ACSSC.2002.1197041</a>.","short":"P.J. Schreier, L.L. Scharf, in: Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers, 2002, pp. 1565–1570.","bibtex":"@inproceedings{Schreier_Scharf_2002, title={Reducing interference in stochastic time-frequency analysis without losing information}, volume={2}, DOI={<a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">10.1109/ACSSC.2002.1197041</a>}, booktitle={Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers}, author={Schreier, Peter J. and Scharf, Louis L.}, year={2002}, pages={1565–1570} }","ama":"Schreier PJ, Scharf LL. Reducing interference in stochastic time-frequency analysis without losing information. In: <i>Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers</i>. Vol 2. ; 2002:1565–1570. doi:<a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">10.1109/ACSSC.2002.1197041</a>","ieee":"P. J. Schreier and L. L. Scharf, “Reducing interference in stochastic time-frequency analysis without losing information,” in <i>Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers</i>, 2002, vol. 2, pp. 1565–1570, doi: <a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">10.1109/ACSSC.2002.1197041</a>.","chicago":"Schreier, Peter J., and Louis L. Scharf. “Reducing Interference in Stochastic Time-Frequency Analysis without Losing Information.” In <i>Proc. 36th\\ Asilomar Conf.\\ Signals Syst.\\ Computers</i>, 2:1565–1570, 2002. <a href=\"https://doi.org/10.1109/ACSSC.2002.1197041\">https://doi.org/10.1109/ACSSC.2002.1197041</a>."},"date_updated":"2023-01-30T11:52:58Z","volume":2,"author":[{"first_name":"Peter J.","full_name":"Schreier, Peter J.","last_name":"Schreier"},{"first_name":"Louis L.","last_name":"Scharf","full_name":"Scharf, Louis L."}],"date_created":"2023-01-30T11:52:09Z","title":"Reducing interference in stochastic time-frequency analysis without losing information","doi":"10.1109/ACSSC.2002.1197041"},{"year":"2002","intvolume":"         2","page":"1153–1156","citation":{"mla":"Schreier, Peter J., and Louis L. Scharf. “Canonical Coordinates for Reduced-Rank Estimation of Improper Complex Random Vectors.” <i>Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.</i>, vol. 2, 2002, pp. 1153–1156, doi:<a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">10.1109/ICASSP.2002.5744004</a>.","short":"P.J. Schreier, L.L. Scharf, in: Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process., 2002, pp. 1153–1156.","bibtex":"@inproceedings{Schreier_Scharf_2002, title={Canonical coordinates for reduced-rank estimation of improper complex random vectors}, volume={2}, DOI={<a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">10.1109/ICASSP.2002.5744004</a>}, booktitle={Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.}, author={Schreier, Peter J. and Scharf, Louis L.}, year={2002}, pages={1153–1156} }","apa":"Schreier, P. J., &#38; Scharf, L. L. (2002). Canonical coordinates for reduced-rank estimation of improper complex random vectors. <i>Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.</i>, <i>2</i>, 1153–1156. <a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">https://doi.org/10.1109/ICASSP.2002.5744004</a>","ama":"Schreier PJ, Scharf LL. Canonical coordinates for reduced-rank estimation of improper complex random vectors. In: <i>Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.</i> Vol 2. ; 2002:1153–1156. doi:<a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">10.1109/ICASSP.2002.5744004</a>","ieee":"P. J. Schreier and L. L. Scharf, “Canonical coordinates for reduced-rank estimation of improper complex random vectors,” in <i>Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.</i>, 2002, vol. 2, pp. 1153–1156, doi: <a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">10.1109/ICASSP.2002.5744004</a>.","chicago":"Schreier, Peter J., and Louis L. Scharf. “Canonical Coordinates for Reduced-Rank Estimation of Improper Complex Random Vectors.” In <i>Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.</i>, 2:1153–1156, 2002. <a href=\"https://doi.org/10.1109/ICASSP.2002.5744004\">https://doi.org/10.1109/ICASSP.2002.5744004</a>."},"title":"Canonical coordinates for reduced-rank estimation of improper complex random vectors","doi":"10.1109/ICASSP.2002.5744004","date_updated":"2023-01-30T11:53:01Z","volume":2,"author":[{"last_name":"Schreier","full_name":"Schreier, Peter J.","first_name":"Peter J."},{"full_name":"Scharf, Louis L.","last_name":"Scharf","first_name":"Louis L."}],"date_created":"2023-01-30T11:52:09Z","abstract":[{"lang":"eng","text":"We consider the problem of minimum mean squared error (MMSE) estimation of complex random vectors in the improper case. Accounting for the information present in the complementary covariance requires the use of widely linear transformations. Based on these, we present the eigenanalysis of improper complex random vectors. This paves the way for a study of two different rank-reduced implementations of the complex Wiener Filter that make use of canonical coordinates: one that is optimum with respect to maximizing mutual information and one that minimizes mean squared error."}],"status":"public","publication":"Proc.\\ IEEE Int.\\ Conf.\\ Acoustics, Speech and Signal Process.","type":"conference","_id":"40906","department":[{"_id":"263"}],"user_id":"43497"},{"date_updated":"2023-03-06T10:26:58Z","author":[{"id":"21202","full_name":"Klüners, Jürgen","last_name":"Klüners","first_name":"Jürgen"}],"volume":11,"publication_status":"published","related_material":{"link":[{"relation":"confirmation","url":"https://projecteuclid.org/journals/experimental-mathematics/volume-11/issue-2/Algorithms-for-function-fields/em/1062621213.full"}]},"citation":{"ieee":"J. Klüners, “Algorithms for function fields,” <i>Experiment. Math. </i>, vol. 11, no. 2, pp. 171–181, 2002.","chicago":"Klüners, Jürgen. “Algorithms for Function Fields.” <i>Experiment. Math. </i> 11, no. 2 (2002): 171–81.","ama":"Klüners J. Algorithms for function fields. <i>Experiment Math </i>. 2002;11(2):171-181.","apa":"Klüners, J. (2002). Algorithms for function fields. <i>Experiment. Math. </i>, <i>11</i>(2), 171–181.","short":"J. Klüners, Experiment. Math.  11 (2002) 171–181.","bibtex":"@article{Klüners_2002, title={Algorithms for function fields}, volume={11}, number={2}, journal={Experiment. Math. }, publisher={Elsevier BV}, author={Klüners, Jürgen}, year={2002}, pages={171–181} }","mla":"Klüners, Jürgen. “Algorithms for Function Fields.” <i>Experiment. Math. </i>, vol. 11, no. 2, Elsevier BV, 2002, pp. 171–81."},"intvolume":"        11","page":"171-181","_id":"35954","user_id":"93826","department":[{"_id":"102"}],"type":"journal_article","status":"public","publisher":"Elsevier BV","date_created":"2023-01-11T09:45:40Z","title":"Algorithms for function fields","issue":"2","year":"2002","keyword":["algorithms","decompositions","Galois groups","subfields"],"language":[{"iso":"eng"}],"publication":"Experiment. Math. ","abstract":[{"text":"Let {\\ASIE K}\\,/{\\small \\ℚ}({\\ASIE t \\!}) be a finite extension. We describe algorithms for computing subfields and automorphisms of {\\ASIE K}\\,/{\\small \\ℚ}({\\ASIE t }\\!). As an application we give an algorithm for finding decompositions of rational functions in {\\small \\ℚ(α)}. We also present an algorithm which decides if an extension {\\ASIE L}\\,/{\\small \\ℚ}({\\ASIE t \\!}) is a subfield of {\\ASIE K}. In case [{\\ASIE K : \\;}{\\small\\ℚ}({\\ASIE t \\!})] = [{\\ASIE L : \\;}{\\small \\ℚ}({\\ASIE t \\!})] we obtain a {\\small \\ℚ}({\\ASIE t \\!})-isomorphism test. Furthermore, we describe an algorithm which computes subfields of the normal closure of {\\ASIE K}\\,/{\\small \\ℚ}({\\ASIE t \\!}).","lang":"eng"}]},{"date_updated":"2023-03-21T09:51:52Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","volume":42,"date_created":"2023-01-25T09:22:34Z","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"title":"Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip","doi":"10.1109/16.381978","publication_identifier":{"issn":["0018-9383"]},"publication_status":"published","issue":"5","year":"2002","intvolume":"        42","page":"841-846","citation":{"apa":"Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42}, DOI={<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={841–846} }","mla":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>.","short":"U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846.","ieee":"U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>.","ama":"Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>. 2002;42(5):841-846. doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>"},"_id":"39904","department":[{"_id":"59"}],"user_id":"20179","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"IEEE Transactions on Electron Devices","type":"journal_article","status":"public"},{"type":"journal_article","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39912","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366."},"intvolume":"        21","page":"363-366","author":[{"last_name":"Schönstein","full_name":"Schönstein, I.","first_name":"I."},{"full_name":"Müller, J.","last_name":"Müller","first_name":"J."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":21,"date_updated":"2023-03-21T09:50:03Z","doi":"10.1016/0167-9317(93)90092-j","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"issue":"1-4","year":"2002","date_created":"2023-01-25T09:26:21Z","publisher":"Elsevier BV","title":"Characterization of submicron NMOS devices due to visible light emission"},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","date_created":"2023-01-25T09:27:23Z","publisher":"Elsevier BV","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","issue":"1-4","year":"2002","department":[{"_id":"59"}],"user_id":"20179","_id":"39914","type":"journal_article","status":"public","volume":19,"author":[{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_updated":"2023-03-21T09:49:25Z","doi":"10.1016/0167-9317(92)90425-q","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","page":"211-214","intvolume":"        19","citation":{"ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>"}},{"issue":"8","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"citation":{"short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>."},"intvolume":"        29","page":"1006-1010","year":"2002","date_created":"2023-01-25T09:23:36Z","author":[{"first_name":"E.","last_name":"Brass","full_name":"Brass, E."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"volume":29,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:51:19Z","doi":"10.1109/4.297714","title":"System integration of optical devices and analog CMOS amplifiers","type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39906","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering"]},{"issue":"8","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"citation":{"ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>"},"page":"1006-1010","intvolume":"        29","year":"2002","date_created":"2023-01-25T09:24:15Z","author":[{"last_name":"Brass","full_name":"Brass, E.","first_name":"E."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"volume":29,"date_updated":"2023-03-21T09:51:33Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","doi":"10.1109/4.297714","title":"System integration of optical devices and analog CMOS amplifiers","type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39907","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering"]},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39899","status":"public","type":"journal_article","publication":"Microelectronic Engineering","doi":"10.1016/0167-9317(95)00280-4","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","date_created":"2023-01-25T09:20:20Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":30,"publisher":"Elsevier BV","date_updated":"2023-03-21T09:53:55Z","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>."},"page":"431-434","intvolume":"        30","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]}},{"doi":"10.1109/40.42985","author":[{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Rueckert, U.","last_name":"Rueckert","first_name":"U."},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"volume":9,"date_updated":"2023-03-21T09:57:17Z","citation":{"ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>.","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }"},"intvolume":"         9","page":"28-44","publication_status":"published","publication_identifier":{"issn":["0272-1732"]},"user_id":"20179","department":[{"_id":"59"}],"_id":"39925","status":"public","type":"journal_article","title":"VLSI technologies for artificial neural networks","date_created":"2023-01-25T09:33:18Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","year":"2002","issue":"6","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"publication":"IEEE Micro"},{"issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>"},"page":"525-528","intvolume":"        53","year":"2002","author":[{"first_name":"V.","last_name":"Mankowski","full_name":"Mankowski, V."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Schumacher","full_name":"Schumacher, K.","first_name":"K."}],"date_created":"2023-01-25T09:10:13Z","volume":53,"date_updated":"2023-03-21T10:00:06Z","publisher":"Elsevier BV","doi":"10.1016/s0167-9317(00)00370-1","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","type":"journal_article","publication":"Microelectronic Engineering","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39882","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"]},{"status":"public","publication":"Microelectronic Engineering","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39879","intvolume":"        53","page":"213-216","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>"},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/s0167-9317(00)00299-9","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","volume":53,"author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_created":"2023-01-25T09:08:36Z","date_updated":"2023-03-21T10:02:46Z","publisher":"Elsevier BV"},{"doi":"10.1109/iecon.2000.972560","title":"Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_created":"2023-01-25T09:09:18Z","publisher":"IEEE","date_updated":"2023-03-21T10:02:30Z","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }","mla":"Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>"},"year":"2002","publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"59"}],"user_id":"20179","_id":"39880","status":"public","publication":"2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)","type":"conference"}]
