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Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","short":"R. Otterbach, U. 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Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen."}],"status":"public","type":"book_chapter","publication":"Silizium-Halbleitertechnologie","language":[{"iso":"eng"}],"_id":"39875","user_id":"20179","department":[{"_id":"59"}],"year":"2002","place":"Wiesbaden","citation":{"mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>.","bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","short":"U. 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