---
_id: '39881'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual
    Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002.
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique}, DOI={<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>},
    booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich
    and Goser, K.}, year={2002} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of
    Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>.
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.'
  mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002,
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.'
date_created: 2023-01-25T09:09:53Z
date_updated: 2023-03-21T10:02:17Z
department:
- _id: '59'
doi: 10.1109/iecon.2000.972560
language:
- iso: eng
publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society.
  IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
  and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
  No.00CH37141)
publication_status: published
publisher: IEEE
status: public
title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39926'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:50Z
date_updated: 2023-03-22T10:36:45Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39892'
author:
- first_name: F.
  full_name: Blum, F.
  last_name: Blum
- first_name: A.
  full_name: Denisenko, A.
  last_name: Denisenko
- first_name: R.
  full_name: Job, R.
  last_name: Job
- first_name: D.
  full_name: Borchert, D.
  last_name: Borchert
- first_name: W.
  full_name: Weber, W.
  last_name: Weber
- first_name: J.V.
  full_name: Borany, J.V.
  last_name: Borany
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: W.R.
  full_name: Fahrner, W.R.
  last_name: Fahrner
citation:
  ama: 'Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various
    type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of
    the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a
    href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>'
  apa: Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann,
    U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds.
    <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)</i>. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>
  bibtex: '@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002,
    title={Nuclear radiation detectors on various type diamonds}, DOI={<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>},
    booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and
    Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and
    Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }'
  chicago: Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich
    Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type
    Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>.
  ieee: 'F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.'
  mla: Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON
    ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics
    Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.
  short: 'F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann,
    W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the
    IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.'
date_created: 2023-01-25T09:15:11Z
date_updated: 2023-03-22T10:38:37Z
department:
- _id: '59'
doi: 10.1109/iecon.1998.724097
language:
- iso: eng
publication: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial
  Electronics Society (Cat. No.98CH36200)
publication_status: published
publisher: IEEE
status: public
title: Nuclear radiation detectors on various type diamonds
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39923'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
citation:
  ama: 'Goser K, Hilleringmann U, Rueckert U. Applications and implementations of
    neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press; 2002. doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>'
  apa: Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations
    of neural networks in microelectronics-overview and status. <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>
  bibtex: '@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and
    implementations of neural networks in microelectronics-overview and status}, DOI={<a
    href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>},
    booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and
    Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }'
  chicago: Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations
    of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press, 2002. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>.
  ieee: 'K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations
    of neural networks in microelectronics-overview and status,” 2002, doi: <a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.'
  mla: Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview
    and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.
  short: 'K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced
    Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press,
    2002.'
date_created: 2023-01-25T09:31:42Z
date_updated: 2023-03-21T09:46:40Z
department:
- _id: '59'
doi: 10.1109/cmpeur.1991.257442
language:
- iso: eng
publication: '[1991] Proceedings, Advanced Computer Technology, Reliable Systems and
  Applications'
publication_status: published
publisher: IEEE Comput. Soc. Press
status: public
title: Applications and implementations of neural networks in microelectronics-overview
  and status
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '39875'
abstract:
- lang: eng
  text: Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten
    der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten
    eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen
    zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als
    Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen
    von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben
    dienen.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>.
    Vieweg+Teubner Verlag; 2002:131–151. doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>'
  apa: Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 131–151). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>
  bibtex: '@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und
    Kontakte}, DOI={<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }'
  chicago: 'Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>,
    131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>.'
  ieee: 'U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.'
  mla: Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2002, pp. 131–151.'
date_created: 2023-01-25T09:06:58Z
date_updated: 2023-03-21T10:03:35Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94119-0_8
language:
- iso: eng
page: 131–151
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94119-0
publisher: Vieweg+Teubner Verlag
status: public
title: Metallisierung und Kontakte
type: book_chapter
user_id: '20179'
year: '2002'
...
---
_id: '44535'
author:
- first_name: Igor
  full_name: Burban, Igor
  id: '72064'
  last_name: Burban
- first_name: Yu.
  full_name: Drozd, Yu.
  last_name: Drozd
citation:
  ama: 'Burban I, Drozd Yu. Derived categories and matrix problems. In: <i> Ukrainian
    Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings
    of the Third International Algebraic Conference Held in Framework of the Ukrainian
    Mathematical Congress</i>. Instytut Matematyky NAN Ukrainy; 2002:201-211.'
  apa: Burban, I., &#38; Drozd, Yu. (2002). Derived categories and matrix problems.
    <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, 201–211.
  bibtex: '@inproceedings{Burban_Drozd_2002, place={Kyiv}, title={Derived categories
    and matrix problems}, booktitle={ Ukrainian mathematical congress 2001. Algebraic
    structures and their applications. Proceedings of the third international algebraic
    conference held in framework of the Ukrainian mathematical congress}, publisher={Instytut
    Matematyky NAN Ukrainy}, author={Burban, Igor and Drozd, Yu.}, year={2002}, pages={201–211}
    }'
  chicago: 'Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.”
    In <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, 201–11. Kyiv: Instytut Matematyky
    NAN Ukrainy, 2002.'
  ieee: I. Burban and Yu. Drozd, “Derived categories and matrix problems,” in <i>
    Ukrainian mathematical congress 2001. Algebraic structures and their applications.
    Proceedings of the third international algebraic conference held in framework
    of the Ukrainian mathematical congress</i>, Kiev, Ukraine, 2002, pp. 201–211.
  mla: Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.” <i>
    Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, Instytut Matematyky NAN Ukrainy, 2002,
    pp. 201–11.
  short: 'I. Burban, Yu. Drozd, in:  Ukrainian Mathematical Congress 2001. Algebraic
    Structures and Their Applications. Proceedings of the Third International Algebraic
    Conference Held in Framework of the Ukrainian Mathematical Congress, Instytut
    Matematyky NAN Ukrainy, Kyiv, 2002, pp. 201–211.'
conference:
  end_date: 2001-07-28
  location: Kiev, Ukraine
  name: Proceedings of the third international algebraic conference held in framework
    of the Ukrainian mathematical congress
  start_date: 2001-07-28
date_created: 2023-05-07T00:46:02Z
date_updated: 2023-05-07T01:37:56Z
department:
- _id: '602'
extern: '1'
language:
- iso: eng
page: 201-211
place: Kyiv
publication: ' Ukrainian mathematical congress 2001. Algebraic structures and their
  applications. Proceedings of the third international algebraic conference held in
  framework of the Ukrainian mathematical congress'
publication_status: published
publisher: Instytut Matematyky NAN Ukrainy
status: public
title: Derived categories and matrix problems
type: conference
user_id: '49063'
year: '2002'
...
---
_id: '44358'
author:
- first_name: Igor
  full_name: Burban, Igor
  id: '72064'
  last_name: Burban
- first_name: H. -G.
  full_name: Freiermuth, H. -G.
  last_name: Freiermuth
citation:
  ama: Burban I, Freiermuth H-G. Geometrical properties of sections of Buchsbaum-
    Rim sheaves. <i>Le Matematiche</i>. 2002;LVII:265–283.
  apa: Burban, I., &#38; Freiermuth, H.-G. (2002). Geometrical properties of sections
    of Buchsbaum- Rim sheaves. <i>Le Matematiche</i>, <i>LVII</i>, 265–283.
  bibtex: '@article{Burban_Freiermuth_2002, title={Geometrical properties of sections
    of Buchsbaum- Rim sheaves}, volume={LVII}, journal={Le Matematiche}, author={Burban,
    Igor and Freiermuth, H. -G.}, year={2002}, pages={265–283} }'
  chicago: 'Burban, Igor, and H. -G. Freiermuth. “Geometrical Properties of Sections
    of Buchsbaum- Rim Sheaves.” <i>Le Matematiche</i> LVII (2002): 265–283.'
  ieee: I. Burban and H.-G. Freiermuth, “Geometrical properties of sections of Buchsbaum-
    Rim sheaves,” <i>Le Matematiche</i>, vol. LVII, pp. 265–283, 2002.
  mla: Burban, Igor, and H. G. Freiermuth. “Geometrical Properties of Sections of
    Buchsbaum- Rim Sheaves.” <i>Le Matematiche</i>, vol. LVII, 2002, pp. 265–283.
  short: I. Burban, H.-G. Freiermuth, Le Matematiche LVII (2002) 265–283.
date_created: 2023-05-03T00:51:10Z
date_updated: 2023-05-07T01:39:06Z
department:
- _id: '602'
extern: '1'
language:
- iso: eng
page: 265–283
publication: Le Matematiche
publication_status: published
status: public
title: Geometrical properties of sections of Buchsbaum- Rim sheaves
type: journal_article
user_id: '49063'
volume: LVII
year: '2002'
...
---
_id: '56907'
author:
- first_name: Rolf
  full_name: Biehler, Rolf
  id: '16274'
  last_name: Biehler
citation:
  ama: 'Biehler R. Alternativen zu CAS und EXCEL - Interaktiv dynamisches Mathematiklernen
    mit innovativer Werk-zeugsoftware. In: Peschek W, ed. <i>Beiträge zum Mathematikunterricht
    2002</i>. Franzbecker; 2002:115-118.'
  apa: Biehler, R. (2002). Alternativen zu CAS und EXCEL - Interaktiv dynamisches
    Mathematiklernen mit innovativer Werk-zeugsoftware. In W. Peschek (Ed.), <i>Beiträge
    zum Mathematikunterricht 2002</i> (pp. 115–118). Franzbecker.
  bibtex: '@inbook{Biehler_2002, place={Hildesheim}, title={Alternativen zu CAS und
    EXCEL - Interaktiv dynamisches Mathematiklernen mit innovativer Werk-zeugsoftware},
    booktitle={Beiträge zum Mathematikunterricht 2002}, publisher={Franzbecker}, author={Biehler,
    Rolf}, editor={Peschek, W.}, year={2002}, pages={115–118} }'
  chicago: 'Biehler, Rolf. “Alternativen zu CAS und EXCEL - Interaktiv dynamisches
    Mathematiklernen mit innovativer Werk-zeugsoftware.” In <i>Beiträge zum Mathematikunterricht
    2002</i>, edited by W. Peschek, 115–18. Hildesheim: Franzbecker, 2002.'
  ieee: 'R. Biehler, “Alternativen zu CAS und EXCEL - Interaktiv dynamisches Mathematiklernen
    mit innovativer Werk-zeugsoftware,” in <i>Beiträge zum Mathematikunterricht 2002</i>,
    W. Peschek, Ed. Hildesheim: Franzbecker, 2002, pp. 115–118.'
  mla: Biehler, Rolf. “Alternativen zu CAS und EXCEL - Interaktiv dynamisches Mathematiklernen
    mit innovativer Werk-zeugsoftware.” <i>Beiträge zum Mathematikunterricht 2002</i>,
    edited by W. Peschek, Franzbecker, 2002, pp. 115–18.
  short: 'R. Biehler, in: W. Peschek (Ed.), Beiträge zum Mathematikunterricht 2002,
    Franzbecker, Hildesheim, 2002, pp. 115–118.'
date_created: 2024-11-06T10:01:34Z
date_updated: 2024-11-06T10:01:38Z
department:
- _id: '363'
editor:
- first_name: W.
  full_name: Peschek, W.
  last_name: Peschek
extern: '1'
language:
- iso: ger
page: 115-118
place: Hildesheim
publication: Beiträge zum Mathematikunterricht 2002
publisher: Franzbecker
status: public
title: Alternativen zu CAS und EXCEL - Interaktiv dynamisches Mathematiklernen mit
  innovativer Werk-zeugsoftware
type: book_chapter
user_id: '37888'
year: '2002'
...
---
_id: '64541'
author:
- first_name: Martin
  full_name: Hofmann, Martin
  last_name: Hofmann
- first_name: Nils Christopher
  full_name: Gerhardt, Nils Christopher
  id: '115298'
  last_name: Gerhardt
  orcid: 0009-0002-5538-231X
- first_name: Anke
  full_name: Wagner, Anke
  last_name: Wagner
- first_name: Christoph
  full_name: Ellmers, Christoph
  last_name: Ellmers
- first_name: Falko
  full_name: Höhnsdorf, Falko
  last_name: Höhnsdorf
- first_name: Jörg
  full_name: Koch, Jörg
  last_name: Koch
- first_name: Wolfgang
  full_name: Stolz, Wolfgang
  last_name: Stolz
- first_name: Stephan W.
  full_name: Koch, Stephan W.
  last_name: Koch
- first_name: Wolfgang W.
  full_name: Rühle, Wolfgang W.
  last_name: Rühle
- first_name: Jörg
  full_name: Hader, Jörg
  last_name: Hader
- first_name: Jerome V.
  full_name: Moloney, Jerome V.
  last_name: Moloney
- first_name: E. P.
  full_name: O‘Reilly, E. P.
  last_name: O‘Reilly
- first_name: Bernd
  full_name: Borchert, Bernd
  last_name: Borchert
- first_name: A. Yu
  full_name: Egorov, A. Yu
  last_name: Egorov
- first_name: Henning
  full_name: Riechert, Henning
  last_name: Riechert
- first_name: Hans Christian
  full_name: Schneider, Hans Christian
  last_name: Schneider
- first_name: Weng W.
  full_name: Chow, Weng W.
  last_name: Chow
citation:
  ama: Hofmann M, Gerhardt NC, Wagner A, et al. Emission dynamics and optical gain
    of 1.3 \mum (GaIn)(NAs)/GaAs Lasers. <i>IEEE journal of quantum electronics /
    Institute of Electrical and Electronics Engineers</i>. 2002;38(2):213-221. doi:<a
    href="https://doi.org/10.1109/3.980275">10.1109/3.980275</a>
  apa: Hofmann, M., Gerhardt, N. C., Wagner, A., Ellmers, C., Höhnsdorf, F., Koch,
    J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O‘Reilly,
    E. P., Borchert, B., Egorov, A. Y., Riechert, H., Schneider, H. C., &#38; Chow,
    W. W. (2002). Emission dynamics and optical gain of 1.3 \mum (GaIn)(NAs)/GaAs
    Lasers. <i>IEEE Journal of Quantum Electronics / Institute of Electrical and Electronics
    Engineers</i>, <i>38</i>(2), 213–221. <a href="https://doi.org/10.1109/3.980275">https://doi.org/10.1109/3.980275</a>
  bibtex: '@article{Hofmann_Gerhardt_Wagner_Ellmers_Höhnsdorf_Koch_Stolz_Koch_Rühle_Hader_et
    al._2002, title={Emission dynamics and optical gain of 1.3 \mum (GaIn)(NAs)/GaAs
    Lasers}, volume={38}, DOI={<a href="https://doi.org/10.1109/3.980275">10.1109/3.980275</a>},
    number={2}, journal={IEEE journal of quantum electronics / Institute of Electrical
    and Electronics Engineers}, author={Hofmann, Martin and Gerhardt, Nils Christopher
    and Wagner, Anke and Ellmers, Christoph and Höhnsdorf, Falko and Koch, Jörg and
    Stolz, Wolfgang and Koch, Stephan W. and Rühle, Wolfgang W. and Hader, Jörg and
    et al.}, year={2002}, pages={213–221} }'
  chicago: 'Hofmann, Martin, Nils Christopher Gerhardt, Anke Wagner, Christoph Ellmers,
    Falko Höhnsdorf, Jörg Koch, Wolfgang Stolz, et al. “Emission Dynamics and Optical
    Gain of 1.3 \mum (GaIn)(NAs)/GaAs Lasers.” <i>IEEE Journal of Quantum Electronics
    / Institute of Electrical and Electronics Engineers</i> 38, no. 2 (2002): 213–21.
    <a href="https://doi.org/10.1109/3.980275">https://doi.org/10.1109/3.980275</a>.'
  ieee: 'M. Hofmann <i>et al.</i>, “Emission dynamics and optical gain of 1.3 \mum
    (GaIn)(NAs)/GaAs Lasers,” <i>IEEE journal of quantum electronics / Institute of
    Electrical and Electronics Engineers</i>, vol. 38, no. 2, pp. 213–221, 2002, doi:
    <a href="https://doi.org/10.1109/3.980275">10.1109/3.980275</a>.'
  mla: Hofmann, Martin, et al. “Emission Dynamics and Optical Gain of 1.3 \mum (GaIn)(NAs)/GaAs
    Lasers.” <i>IEEE Journal of Quantum Electronics / Institute of Electrical and
    Electronics Engineers</i>, vol. 38, no. 2, 2002, pp. 213–21, doi:<a href="https://doi.org/10.1109/3.980275">10.1109/3.980275</a>.
  short: M. Hofmann, N.C. Gerhardt, A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch,
    W. Stolz, S.W. Koch, W.W. Rühle, J. Hader, J.V. Moloney, E.P. O‘Reilly, B. Borchert,
    A.Y. Egorov, H. Riechert, H.C. Schneider, W.W. Chow, IEEE Journal of Quantum Electronics
    / Institute of Electrical and Electronics Engineers 38 (2002) 213–221.
date_created: 2026-02-20T10:04:33Z
date_updated: 2026-02-20T10:31:38Z
department:
- _id: '977'
doi: 10.1109/3.980275
intvolume: '        38'
issue: '2'
language:
- iso: eng
page: 213 - 221
publication: IEEE journal of quantum electronics / Institute of Electrical and Electronics
  Engineers
status: public
title: Emission dynamics and optical gain of 1.3 \mum (GaIn)(NAs)/GaAs Lasers
type: journal_article
user_id: '15911'
volume: 38
year: '2002'
...