@article{9514,
  author       = {{Huang, Lingling and Song, Xu and Reineke, Bernhard and Li, Tianyou and Li, Xiaowei and Liu, Juan and Zhang, Shuang and Wang, Yongtian and Zentgraf, Thomas}},
  issn         = {{2330-4022}},
  journal      = {{ACS Photonics}},
  pages        = {{338--346}},
  title        = {{{Volumetric Generation of Optical Vortices with Metasurfaces}}},
  doi          = {{10.1021/acsphotonics.6b00808}},
  year         = {{2017}},
}

@article{7020,
  author       = {{Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  pages        = {{7--10}},
  publisher    = {{Elsevier BV}},
  title        = {{{Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy}}},
  doi          = {{10.1016/j.jcrysgro.2017.10.029}},
  volume       = {{481}},
  year         = {{2017}},
}

@article{7026,
  author       = {{Zolatanosha, Viktoryia and Reuter, Dirk}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  pages        = {{35--39}},
  publisher    = {{Elsevier BV}},
  title        = {{{Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}}},
  doi          = {{10.1016/j.mee.2017.05.053}},
  volume       = {{180}},
  year         = {{2017}},
}

@article{7027,
  author       = {{Scholz, Sven and Schott, Rüdiger and Labud, Patrick A. and Somsen, Christoph and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  pages        = {{46--50}},
  publisher    = {{Elsevier BV}},
  title        = {{{Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy}}},
  doi          = {{10.1016/j.jcrysgro.2017.04.013}},
  volume       = {{470}},
  year         = {{2017}},
}

@article{7028,
  author       = {{Kuznetsova, M. S. and Cherbunin, R. V. and Gerlovin, I. Ya. and Ignatiev, I. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{2469-9950}},
  journal      = {{Physical Review B}},
  number       = {{15}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Spin dynamics of quadrupole nuclei in InGaAs quantum dots}}},
  doi          = {{10.1103/physrevb.95.155312}},
  volume       = {{95}},
  year         = {{2017}},
}

@article{7029,
  author       = {{Srinivasan, A. and Miserev, D. S. and Hudson, K. L. and Klochan, O. and Muraki, K. and Hirayama, Y. and Reuter, Dirk and Wieck, A. D. and Sushkov, O. P. and Hamilton, A. R.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  number       = {{14}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact}}},
  doi          = {{10.1103/physrevlett.118.146801}},
  volume       = {{118}},
  year         = {{2017}},
}

@article{9681,
  author       = {{Volk, Martin F. and Rüter, Christian E. and Santandrea, Matteo and Eigner, Christof and Padberg, Laura and Herrmann, Harald and Silberhorn, Christine and Kip, Detlef}},
  issn         = {{2159-3930}},
  journal      = {{Optical Materials Express}},
  title        = {{{Fabrication of low-loss Rb-exchanged ridge waveguides in z-cut KTiOPO_4}}},
  doi          = {{10.1364/ome.8.000082}},
  year         = {{2017}},
}

@inproceedings{9682,
  author       = {{Brecht, Benjamin and Lazo-Arjona, O. and Kaczmarek, K. T. and Parker, T. and Ricken, R. and Quiring, V. and Eigner, Christof and Luo, K. H. and Herrmann, Harald and Silberhorn, Christine and Walmsley, I. A.}},
  booktitle    = {{Frontiers in Optics 2017}},
  isbn         = {{9781943580330}},
  title        = {{{A monolithic, doubly-resonant parametric down-conversion source for Caesium Raman memories}}},
  doi          = {{10.1364/fio.2017.jw4a.3}},
  year         = {{2017}},
}

@article{9684,
  author       = {{Stefszky, M. and Ricken, R. and Eigner, Christof and Quiring, V. and Herrmann, Harald and Silberhorn, Christine}},
  issn         = {{2331-7019}},
  journal      = {{Physical Review Applied}},
  title        = {{{Waveguide Cavity Resonator as a Source of Optical Squeezing}}},
  doi          = {{10.1103/physrevapplied.7.044026}},
  year         = {{2017}},
}

@article{9685,
  author       = {{Sansoni, Linda and Luo, Kai Hong and Eigner, Christof and Ricken, Raimund and Quiring, Viktor and Herrmann, Harald and Silberhorn, Christine}},
  issn         = {{2056-6387}},
  journal      = {{npj Quantum Information}},
  title        = {{{A two-channel, spectrally degenerate polarization entangled source on chip}}},
  doi          = {{10.1038/s41534-016-0005-z}},
  year         = {{2017}},
}

@article{9831,
  author       = {{Burenkov, I. A. and Sharma, A. K. and Gerrits, T. and Harder, G. and Bartley, Tim and Silberhorn, Christine and Goldschmidt, E. A. and Polyakov, S. V.}},
  issn         = {{2469-9926}},
  journal      = {{Physical Review A}},
  title        = {{{Full statistical mode reconstruction of a light field via a photon-number-resolved measurement}}},
  doi          = {{10.1103/physreva.95.053806}},
  year         = {{2017}},
}

@article{9834,
  author       = {{Meyer-Scott, Evan and Montaut, Nicola and Tiedau, Johannes and Sansoni, Linda and Herrmann, Harald and Bartley, Tim and Silberhorn, Christine}},
  issn         = {{2469-9926}},
  journal      = {{Physical Review A}},
  title        = {{{Limits on the heralding efficiencies and spectral purities of spectrally filtered single photons from photon-pair sources}}},
  doi          = {{10.1103/physreva.95.061803}},
  year         = {{2017}},
}

@inbook{3950,
  abstract     = {{In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic 
circuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three 
dimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers}},
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  booktitle    = {{Nanoscaled Films and Layers}},
  editor       = {{Nanai, L.}},
  isbn         = {{9789535131434}},
  publisher    = {{InTech}},
  title        = {{{Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}}},
  doi          = {{10.5772/67572}},
  year         = {{2017}},
}

@inproceedings{3951,
  author       = {{Brassat, Katharina and Lindner, Jörg}},
  location     = {{Barcelona (Spain)}},
  title        = {{{Joining self-assembly techniques: A route to hierarchical nanopores}}},
  year         = {{2017}},
}

@inproceedings{3952,
  author       = {{Brassat, Katharina and Kool, Daniel and Bürger, Julius and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Micro- and nanopatterned surfaces with tailored chemical and topographical contrast by self-assembly techniques}}},
  year         = {{2017}},
}

@inproceedings{3953,
  author       = {{Brassat, Katharina and Keller, A. and Grundmeier, G. and Bremser, W. and Strube, O. and Lindner, Jörg}},
  location     = {{Straßburg (France)}},
  title        = {{{Tailored antidot patterns created by nanosphere lithography for bioapplications}}},
  year         = {{2017}},
}

@inproceedings{3954,
  author       = {{Kismann, Michael and Riedl, Thomas and Lindner, Jörg}},
  location     = {{Straßburg (France)}},
  title        = {{{Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching}}},
  year         = {{2017}},
}

@inproceedings{3955,
  author       = {{Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{InAs heteroepitaxy on GaAs patterned by nanosphere lithography}}},
  year         = {{2017}},
}

@inproceedings{3987,
  author       = {{Riedl, Thomas and Kunnathully, Vinay  and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}},
  location     = {{Warsaq (Poland)}},
  title        = {{{Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}}},
  year         = {{2017}},
}

@inproceedings{3988,
  author       = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}},
  location     = {{Straßburg (France)}},
  title        = {{{Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs}}},
  year         = {{2017}},
}