@inproceedings{4020,
  author       = {{Brodehl, Christoph and Riedl, Thomas and Greulich-Weber, Siegmund and Lindner, Jörg}},
  location     = {{Lille (France)}},
  title        = {{{Three-dimensional analysis of mask-clogging effects on the morphology of nanoparticles fabricated by nanosphere lithography}}},
  year         = {{2015}},
}

@inproceedings{4021,
  author       = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}},
  location     = {{Paderborn}},
  title        = {{{How to create billions of tailored plasmonic nanoparticles in half an hour}}},
  year         = {{2015}},
}

@inproceedings{4022,
  author       = {{Drude, Dennis and Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Correlation between defect densities in colloidal nanosphere masks and experimental parameters}}},
  year         = {{2015}},
}

@article{4023,
  author       = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}},
  issn         = {{1946-4274}},
  journal      = {{MRS Proceedings}},
  publisher    = {{Cambridge University Press (CUP)}},
  title        = {{{An Algorithm for Tailoring of Nanoparticles by Double Angle Resolved Nanosphere Lithography}}},
  doi          = {{10.1557/opl.2015.77}},
  volume       = {{1748}},
  year         = {{2015}},
}

@article{4024,
  abstract     = {{We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on 
3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes 
and densities were obtained from uncapped samples by atomic force microscopy. These results were correlated 
with similar but capped samples by photoluminescence experiments. The QD density varies by one order of 
magnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer 
thickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison 
between the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov 
growth mode as the main formation process of the cubic GaN QDs.  }},
  author       = {{Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{4-5}},
  pages        = {{452--455}},
  publisher    = {{Wiley}},
  title        = {{{Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}}},
  doi          = {{10.1002/pssc.201400132}},
  volume       = {{12}},
  year         = {{2015}},
}

@inproceedings{4026,
  author       = {{Garozzo, C. and Brassat, Katharina and La Magna, A.  and Puglisi, R.A.  and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Self-Arrangement of Colloidal Au Nanoparticles in SiO2-Nanopores fabricated by Block-Copolymer Lithography}}},
  year         = {{2015}},
}

@article{4027,
  abstract     = {{We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of
cubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy
(TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic
defects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular
beam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup
integrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL
signals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL
emission intensity is shown to increase with increasing film thickness and decreasing SF density. This
correlation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking
curves with increasing film thickness of c-GaN films.}},
  author       = {{Kemper, R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram, F. and Christen, J. and Lindner, Jörg and As, D. J.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{4-5}},
  pages        = {{469--472}},
  publisher    = {{Wiley}},
  title        = {{{STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}}},
  doi          = {{10.1002/pssc.201400154}},
  volume       = {{12}},
  year         = {{2015}},
}

@inproceedings{4029,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  location     = {{Berlin (Germany)}},
  title        = {{{Stability of heteroepitaxial coherent growth modes on nanowire radial surfaces}}},
  year         = {{2015}},
}

@inproceedings{4030,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  location     = {{Berlin (Germany)}},
  title        = {{{A molecular statics study of strain fields and defect stability in axial-heteroepitaxial nanopillars}}},
  year         = {{2015}},
}

@inproceedings{4031,
  author       = {{Lindner, Jörg}},
  location     = {{Catania (Italy)}},
  title        = {{{Making things small – for fun and for serious applications}}},
  year         = {{2015}},
}

@inproceedings{4032,
  author       = {{Lindner, Jörg}},
  location     = {{Bukarest (Romania)}},
  title        = {{{Bundling of light to very small spaces with plasmons}}},
  year         = {{2015}},
}

@article{4276,
  abstract     = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a
buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}},
  author       = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}},
  number       = {{3}},
  pages        = {{437--441}},
  publisher    = {{Wiley}},
  title        = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
  doi          = {{10.1002/pssb.201552591}},
  volume       = {{253}},
  year         = {{2015}},
}

@article{4331,
  abstract     = {{We report about the fabrication and analysis of high Q photonic crystal cavities with metallic
Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well
in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent
readout within the cavity and fast electric manipulations. The cavity structures are characterized by
photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity
resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent
photocurrent measurements in the region between 4.5K and 310K show an exponential
enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.}},
  author       = {{Quiring, W. and Al-Hmoud, M. and Rai, A. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{4}},
  publisher    = {{AIP Publishing}},
  title        = {{{Photonic crystal cavities with metallic Schottky contacts}}},
  doi          = {{10.1063/1.4928038}},
  volume       = {{107}},
  year         = {{2015}},
}

@article{1696,
  author       = {{Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{21}},
  publisher    = {{AIP Publishing}},
  title        = {{{Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}}},
  doi          = {{10.1063/1.4936768}},
  volume       = {{118}},
  year         = {{2015}},
}

@article{1698,
  author       = {{Huang, Lingling and Mühlenbernd, Holger and Li, Xiaowei and Song, Xu and Bai, Benfeng and Wang, Yongtian and Zentgraf, Thomas}},
  issn         = {{0935-9648}},
  journal      = {{Advanced Materials}},
  number       = {{41}},
  pages        = {{6444--6449}},
  publisher    = {{Wiley-Blackwell}},
  title        = {{{Broadband Hybrid Holographic Multiplexing with Geometric Metasurfaces}}},
  doi          = {{10.1002/adma.201502541}},
  volume       = {{27}},
  year         = {{2015}},
}

@article{1700,
  author       = {{Zheng, Guoxing and Mühlenbernd, Holger and Kenney, Mitchell and Li, Guixin and Zentgraf, Thomas and Zhang, Shuang}},
  issn         = {{1748-3387}},
  journal      = {{Nature Nanotechnology}},
  number       = {{4}},
  pages        = {{308--312}},
  publisher    = {{Springer Nature}},
  title        = {{{Metasurface holograms reaching 80% efficiency}}},
  doi          = {{10.1038/nnano.2015.2}},
  volume       = {{10}},
  year         = {{2015}},
}

@article{1461,
  author       = {{Mühlenbernd, Holger and Georgi, Philip and Pholchai, Nitipat and Huang, Lingling and Li, Guixin and Zhang, Shuang and Zentgraf, Thomas}},
  issn         = {{2330-4022}},
  journal      = {{ACS Photonics}},
  number       = {{1}},
  pages        = {{124--129}},
  publisher    = {{American Chemical Society (ACS)}},
  title        = {{{Amplitude- and Phase-Controlled Surface Plasmon Polariton Excitation with Metasurfaces}}},
  doi          = {{10.1021/acsphotonics.5b00536}},
  volume       = {{3}},
  year         = {{2015}},
}

@article{16104,
  author       = {{Bartley, Tim and Walmsley, Ian A}},
  issn         = {{1367-2630}},
  journal      = {{New Journal of Physics}},
  title        = {{{Directly comparing entanglement-enhancing non-Gaussian operations}}},
  doi          = {{10.1088/1367-2630/17/2/023038}},
  year         = {{2015}},
}

@article{16331,
  author       = {{Wilfer, Claudia and Liebhäuser, Patricia and Hoffmann, Alexander and Erdmann, Hannes and Grossmann, Oleg and Runtsch, Leander and Paffenholz, Eva and Schepper, Rahel and Dick, Regina and Bauer, Matthias and Dürr, Maximilian and Ivanović-Burmazović, Ivana and Herres-Pawlis, Sonja}},
  issn         = {{0947-6539}},
  journal      = {{Chemistry - A European Journal}},
  pages        = {{17639--17649}},
  title        = {{{Efficient Biomimetic Hydroxylation Catalysis with a Bis(pyrazolyl)imidazolylmethane Copper Peroxide Complex}}},
  doi          = {{10.1002/chem.201501685}},
  year         = {{2015}},
}

@article{10027,
  author       = {{Landmann, M. and Rauls, E. and Schmidt, Wolf Gero and Neumann, M. D. and Speiser, E. and Esser, N.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{GaNm-plane: Atomic structure, surface bands, and optical response}}},
  doi          = {{10.1103/physrevb.91.035302}},
  year         = {{2015}},
}