@inbook{40309, author = {{Kitzerow, Heinz-Siegfried}}, booktitle = {{Liquid Crystals In Complex Geometries}}, editor = {{Crawford, G P and Zumer, S}}, isbn = {{9781482272796}}, pages = {{187--219}}, publisher = {{Taylor & Francis }}, title = {{{Polymer Dispersed and Polymer Stabilized Chiral Liquid Crystals}}}, doi = {{10.1201/9781482272796}}, year = {{1996}}, } @inproceedings{40307, author = {{Kitzerow, Heinz-Siegfried and Strauss, J. and Jain, Sukhmal C.}}, booktitle = {{SPIE Proceedings}}, editor = {{Shashidhar, Ranganathan}}, issn = {{0277-786X}}, publisher = {{SPIE}}, title = {{{Polymer-dispersed liquid crystals: holographic formation of switchable gratings}}}, doi = {{10.1117/12.235340}}, year = {{1996}}, } @inbook{42041, author = {{Huber, Klaus and Burchard, Walther}}, booktitle = {{Large Ring Molecules}}, editor = {{Semlyen, J. Anthony}}, isbn = {{0-471-96715-7}}, pages = {{627--684}}, publisher = {{John Wiley & Sons}}, title = {{{Theory of Macromolecular Rings}}}, year = {{1996}}, } @inbook{43407, author = {{Meier, Torsten and Koch, S.W. and Stroucken, T. and Knorr, A. and Hader, J. and Rossi, F. and Thomas, P.}}, booktitle = {{Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers}}, editor = {{Koch, S.W.}}, pages = {{81--130}}, publisher = {{World Scientific}}, title = {{{Coherent Dynamics of Semiconductor Heterostructures}}}, doi = {{10.1142/9789812830487_0003}}, year = {{1996}}, } @article{43413, abstract = {{We describe a novel three-pulse degenerate four-wave mixing configuration that permits the direct observation of the coherence between the σ+ and the σ− exciton states in a GaAs quantum well excited in a two-photon process. It is found that the phase coherence between the two single heavy-hole exciton states decays with a time constant that is considerably longer than the dephasing time of the coherence between these states and the ground state (interband coherence). All the experimental data are well described by numerical solutions of the optical Bloch equations for a phenomenological multilevel model.}}, author = {{Meier, Torsten and Bott, K. and Mayer, E.J. and Smith, G.O. and Heuckeroth, V. and Hübner, M. and Kuhl, J. and Schulze, A. and Lindberg, M. and Koch, S.W. and Thomas, P. and Hey, R. and Ploog, K.}}, journal = {{Journal of the Optical Society of America B}}, number = {{5}}, pages = {{1026--1030}}, publisher = {{Optica Publishing Group}}, title = {{{Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells}}}, doi = {{10.1364/JOSAB.13.001026}}, volume = {{13}}, year = {{1996}}, } @inbook{43553, abstract = {{During the last decade, a variety of field-induced coherent phenomena in semiconductor superlattices has received considerable attention both from a theoretical and from an experimental point of view. For the case of a static applied electric field, the existence of Bloch oscillations has been predicted theoretically and confirmed by means of different experimental techniques of nonlinear optical spectroscopy.}}, author = {{Meier, Torsten and Rossi, F. and Je, K.-C and Hader, J. and Thomas, P. and Koch, S.W.}}, booktitle = {{Hot Carriers in Semiconductors}}, editor = {{Hess, K.}}, isbn = {{978-1-4613-8035-1}}, location = {{Chicago}}, pages = {{195--197}}, publisher = {{New York}}, title = {{{On the Observability of dynamic localization in semiconductor superlattices using optical spectroscopy}}}, doi = {{10.1007/978-1-4613-0401-2_46}}, year = {{1996}}, } @inproceedings{43617, author = {{Meier, Torsten and Rossi, F. and Gulia, M. and Selbmann, P.E. and Molinari, E. and Thomas, P. and Thomas, P. and Koch, S.W.}}, booktitle = {{Proceedings of the 23rd ICPS}}, editor = {{Scheffler, M. and Zimmermann, R.}}, location = {{Berlin}}, pages = {{1775--1778}}, publisher = {{World Scientific}}, title = {{{Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing}}}, year = {{1996}}, } @article{43410, abstract = {{We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to decrease with increasing field, and lie in the picosecond and subpicosecond ranges for fields on the order of a few kV/cm. They are considerably longer than those calculated for a 1s exciton in bulk GaAs. We explain this difference as a result of the nonparabolicities in the superlattice miniband dispersion. In addition to studying the field-induced ionization of the 1s resonance, we also investigate the field dependence of excitonic wave packets composed of both bound and continuum states of the exciton. It is found that the continuum components of the wave packet are more sensitive to low electric fields than the 1s component. © 1996 The American Physical Society.}}, author = {{Meier, Torsten and von Plessen, G. and Koch, M. and Feldmann, J. and Thomas, P. and Koch, S.W. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}}, journal = {{Physical Review-Section B-Condensed Matter}}, number = {{20}}, pages = {{13688--13693}}, title = {{{Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice}}}, doi = {{10.1103/PhysRevB.53.13688}}, volume = {{53}}, year = {{1996}}, } @article{43416, abstract = {{Beats in the transient four-wave-mixing signal from strongly inhomogeneously broadened semiconductor quantum wells are observed. Based on their phase and polarization properties, the beats are assigned to biexcitons in the mesoscopically disordered material. With increasing excitation intensity a halving of the beat period is observed and is accurately reproduced by calculations including fifth-order contributions.}}, author = {{Meier, Torsten and Albrecht, T.F. and Bott, K. and Schulze, A. and Koch, M. and Cundiff, S.T. and Feldmann, J. and Stolz, W. and Thomas, P. and Koch, S.W. and Göbel, E.O.}}, journal = {{Physical Review B}}, number = {{7}}, pages = {{4436--4439}}, publisher = {{American Physical Society}}, title = {{{Disorder mediated biexcitonic beats in semiconductor quantum wells}}}, doi = {{10.1103/PhysRevB.54.4436}}, volume = {{54}}, year = {{1996}}, } @article{43419, abstract = {{Electronic correlation effects which can be directly probed by ultrafast four-wave mixing are predicted using the electronic-oscillator representation of conjugated polyenes. Comparison with inorganic semiconductors is made possible since the semiconductor Bloch equations projected onto the lowest exciton are obtained as a limiting case. A sign difference in a nonlinear scattering potential clearly shows up in the Wigner spectrogram representing the time and frequency resolved signal.}}, author = {{Meier, Torsten and Mukamel, S.}}, journal = {{Physical review letters}}, number = {{16}}, pages = {{3471--3474}}, publisher = {{American Physical Society}}, title = {{{Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures}}}, doi = {{10.1103/PhysRevLett.77.3471}}, volume = {{77}}, year = {{1996}}, } @inbook{43565, abstract = {{The dynamics of carriers induced by electric fields in semiconductor superlattices has received much interest in recent years. Phenomena like Bloch oscillations and negative differential velocity in these structures have been studied using a variety of experimental techniques [1–5]. One particular point of interest has been the transition of the miniband regime to the Bloch oscillation regime with increasing electric field [6,7]. Cw spectra of strongly-coupled superlattices have evidenced that this transition is concomitant with a rapid field-induced ionization of the zero-field miniband exciton [5,8]. While it has been pointed out from the theoretical side that the field-induced ionization process strongly influences the coherent dynamics in the transition region [9], no systematic experimental investigation of the ionization process has been carried out so far. One interesting question that such an investigation could help to answer is to what extent this ionization process differs from the well-documented case of field-induced exciton ionization in bulk semiconductors.}}, author = {{Meier, Torsten and Koch, M. and von Plessen, G. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}}, booktitle = {{Hot Carriers in Semiconductors}}, editor = {{Hess, K.}}, isbn = {{10.1007/978-1-4613-0401-2_1}}, location = {{Chicago}}, pages = {{3--6}}, publisher = {{Plenum Press}}, title = {{{Field-induced exciton ionization studied by four-wave mixing}}}, doi = {{10.1007/978-1-4613-0401-2_1}}, year = {{1996}}, } @inbook{43615, author = {{Meier, Torsten and Koch, S.W. and Hader, J. and Je, K.-C and Rossi, F. and Thomas, P.}}, booktitle = {{Frontiers in Nanoscale Science of Micro/Submicro Devices}}, editor = {{Jauho, A.-P. and Buzeaneva, E.V.}}, isbn = {{9780792343011}}, location = {{Kiev}}, pages = {{459--478}}, publisher = {{Kluver Publ.}}, title = {{{Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures}}}, volume = {{328}}, year = {{1996}}, } @inbook{43559, abstract = {{The progress in the generation of ultrashort laser pulses, together with the development of spectroscopies on this time-scale, has led to a series of experiments which give new insight into the microscopic carrier dynamics in semiconductors. In particular, the energy relaxation of photoexcited carriers has been widely investigated. At the same time, recent progress in the fabrication and characterization of semiconductor heterostructures and superlattices allows a detailed study of a new class of phenomena induced by an applied electric field, such as Bloch oscillations1,2. Both classes of phenomena typically occur on a pico- or femtosecond time-scale, where the coupling between coherent and incoherent phenomena is known to play a dominant role3. Therefore, an adequate theoretical model of the ultrafast dynamics on this time-scale must account for both coherent and incoherent effects on the same kinetic level.}}, author = {{Meier, Torsten and Rossi, F. and Thomas, P. and Koch, S.W. and Selbmann , P.E. and Molinari, E.}}, booktitle = {{Hot Carriers in Semiconductors}}, editor = {{Hess, K.}}, isbn = {{978-1-4613-8035-1}}, location = {{Chicago}}, pages = {{157--160}}, publisher = {{Plenum Press}}, title = {{{Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation}}}, doi = {{10.1007/978-1-4613-0401-2_37}}, year = {{1996}}, } @article{13795, author = {{Scholze, A. and Schmidt, Wolf Gero and Käckell, P. and Bechstedt, F.}}, issn = {{0921-5107}}, journal = {{Materials Science and Engineering: B}}, number = {{1-3}}, pages = {{158--161}}, title = {{{Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure}}}, doi = {{10.1016/0921-5107(95)01477-2}}, volume = {{37}}, year = {{1996}}, } @article{13789, author = {{Scholze, A. and Schmidt, Wolf Gero and Bechstedt, F.}}, issn = {{0163-1829}}, journal = {{Physical Review B}}, number = {{20}}, pages = {{13725--13733}}, title = {{{Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face}}}, doi = {{10.1103/physrevb.53.13725}}, volume = {{53}}, year = {{1996}}, } @article{13793, author = {{Schmidt, Wolf Gero and Scholze, A. and Bechstedt, F.}}, issn = {{0039-6028}}, journal = {{Surface Science}}, pages = {{183--188}}, title = {{{Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?}}}, doi = {{10.1016/0039-6028(95)01270-2}}, volume = {{351}}, year = {{1996}}, } @article{13788, author = {{Schmidt, Wolf Gero and Verwoerd, W.S}}, issn = {{0375-9601}}, journal = {{Physics Letters A}}, number = {{4}}, pages = {{275--280}}, title = {{{Annihilation of delocalized positrons: a comparison of diamond and silicon}}}, doi = {{10.1016/0375-9601(96)00653-6}}, volume = {{222}}, year = {{1996}}, } @article{13794, author = {{Käckell, Peter and Schmidt, Wolf Gero and Bechstedt, Friedhelm}}, issn = {{0169-4332}}, journal = {{Applied Surface Science}}, pages = {{141--146}}, title = {{{Se-induced 3d core-level shifts of GaAs(110)}}}, doi = {{10.1016/s0169-4332(96)00135-3}}, volume = {{104-105}}, year = {{1996}}, } @article{13787, author = {{Schmidt, Wolf Gero}}, issn = {{0167-5729}}, journal = {{Surface Science Reports}}, pages = {{141--223}}, title = {{{Adsorption of group-V elements on III–V (1 1 0) surfaces}}}, doi = {{10.1016/s0167-5729(96)00006-4}}, volume = {{25}}, year = {{1996}}, } @article{13791, author = {{Scholze, A. and Schmidt, Wolf Gero and Bechstedt, F.}}, issn = {{0040-6090}}, journal = {{Thin Solid Films}}, pages = {{256--259}}, title = {{{Diamond (111) and (100) surface reconstructions}}}, doi = {{10.1016/0040-6090(96)08646-4}}, volume = {{281-282}}, year = {{1996}}, }