[{"ddc":["530"],"user_id":"158","volume":81,"publisher":"American Physical Society (APS)","_id":"4174","urn":"41740","has_accepted_license":"1","status":"public","oa":"1","file_date_updated":"2018-09-04T19:58:41Z","citation":{"chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i> 81, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>.","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).","ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” <i>Physical Review B</i>, vol. 81, no. 11, 2010.","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>, <i>81</i>(11). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>. 2010;81(11). doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>","mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>."},"doi":"10.1103/physrevb.81.115305","article_number":"115305","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:29Z","publication_status":"published","intvolume":"        81","article_type":"original","year":"2010","title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"last_name":"Grodecka-Grad","first_name":"A.","full_name":"Grodecka-Grad, A."},{"id":"158","orcid":"0000-0001-7059-9862","first_name":"Jens","last_name":"Förstner","full_name":"Förstner, Jens"}],"type":"journal_article","keyword":["tet_topic_qd"],"department":[{"_id":"15"}],"file":[{"content_type":"application/pdf","file_id":"4175","file_size":680408,"access_level":"open_access","file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","date_updated":"2018-09-04T19:58:41Z","relation":"main_file","date_created":"2018-08-28T08:58:21Z","creator":"hclaudia"}],"date_created":"2018-08-28T08:57:24Z","abstract":[{"lang":"eng","text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed."}],"publication":"Physical Review B","issue":"11"},{"language":[{"iso":"eng"}],"article_number":"253501","doi":"10.1063/1.3455066","author":[{"full_name":"Tschumak, E.","last_name":"Tschumak","first_name":"E."},{"last_name":"Granzner","first_name":"R.","full_name":"Granzner, R."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"first_name":"F.","last_name":"Schwierz","full_name":"Schwierz, F."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"first_name":"H.","last_name":"Nagasawa","full_name":"Nagasawa, H."},{"full_name":"Abe, M.","first_name":"M.","last_name":"Abe"},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","year":"2010","article_type":"original","intvolume":"        96","publication_status":"published","date_updated":"2022-01-06T07:00:33Z","date_created":"2018-08-28T11:56:08Z","file":[{"date_created":"2018-08-28T11:58:27Z","creator":"hclaudia","file_id":"4195","content_type":"application/pdf","success":1,"file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","access_level":"closed","file_size":277385,"relation":"main_file","date_updated":"2018-08-28T11:58:27Z"}],"department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","publication":"Applied Physics Letters","issue":"25","abstract":[{"lang":"eng","text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"_id":"4194","publisher":"AIP Publishing","volume":96,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1","citation":{"ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>"},"file_date_updated":"2018-08-28T11:58:27Z"},{"has_accepted_license":"1","status":"public","user_id":"55706","ddc":["530"],"volume":82,"_id":"4200","publisher":"American Physical Society (APS)","file_date_updated":"2018-08-28T12:23:29Z","citation":{"apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>.","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }"},"publication_status":"published","date_updated":"2022-01-06T07:00:34Z","article_type":"original","intvolume":"        82","year":"2010","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","author":[{"last_name":"Zdravkov","first_name":"V. I.","full_name":"Zdravkov, V. I."},{"first_name":"J.","last_name":"Kehrle","full_name":"Kehrle, J."},{"full_name":"Obermeier, G.","last_name":"Obermeier","first_name":"G."},{"full_name":"Gsell, S.","first_name":"S.","last_name":"Gsell"},{"full_name":"Schreck, M.","last_name":"Schreck","first_name":"M."},{"full_name":"Müller, C.","last_name":"Müller","first_name":"C."},{"first_name":"H.-A.","last_name":"Krug von Nidda","full_name":"Krug von Nidda, H.-A."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"last_name":"Moosburger-Will","first_name":"J.","full_name":"Moosburger-Will, J."},{"full_name":"Nold, E.","first_name":"E.","last_name":"Nold"},{"first_name":"R.","last_name":"Morari","full_name":"Morari, R."},{"full_name":"Ryazanov, V. V.","last_name":"Ryazanov","first_name":"V. V."},{"full_name":"Sidorenko, A. S.","last_name":"Sidorenko","first_name":"A. S."},{"first_name":"S.","last_name":"Horn","full_name":"Horn, S."},{"last_name":"Tidecks","first_name":"R.","full_name":"Tidecks, R."},{"full_name":"Tagirov, L. R.","first_name":"L. R.","last_name":"Tagirov"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"doi":"10.1103/physrevb.82.054517","article_number":"054517","language":[{"iso":"eng"}],"extern":"1","abstract":[{"lang":"eng","text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results."}],"publication":"Physical Review B","issue":"5","type":"journal_article","department":[{"_id":"15"}],"file":[{"date_created":"2018-08-28T12:23:29Z","creator":"hclaudia","file_id":"4201","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-28T12:23:29Z","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","access_level":"closed","file_size":723266}],"date_created":"2018-08-28T12:22:11Z"},{"abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"extern":"1","issue":"2","publication":"Journal of Applied Physics","type":"journal_article","department":[{"_id":"15"}],"file":[{"date_created":"2018-08-28T12:28:22Z","creator":"hclaudia","content_type":"application/pdf","success":1,"file_id":"4203","file_size":688753,"access_level":"closed","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","date_updated":"2018-08-28T12:28:22Z","relation":"main_file"}],"date_created":"2018-08-28T12:27:34Z","date_updated":"2022-01-06T07:00:34Z","publication_status":"published","intvolume":"       107","article_type":"original","year":"2010","title":"Characterization of unintentional doping in nonpolar GaN","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"first_name":"Tongtong","last_name":"Zhu","full_name":"Zhu, Tongtong"},{"full_name":"Johnston, Carol F.","first_name":"Carol F.","last_name":"Johnston"},{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"last_name":"Kappers","first_name":"Menno J.","full_name":"Kappers, Menno J."},{"first_name":"Rachel A.","last_name":"Oliver","full_name":"Oliver, Rachel A."}],"doi":"10.1063/1.3284944","article_number":"023503","language":[{"iso":"eng"}],"file_date_updated":"2018-08-28T12:28:22Z","citation":{"ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>"},"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"55706","volume":107,"publisher":"AIP Publishing","_id":"4202"},{"abstract":[{"lang":"eng","text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations."}],"issue":"9","publication":"Physical Review B","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"date_created":"2018-08-28T12:31:01Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4205","access_level":"closed","file_size":238023,"file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","date_updated":"2018-08-28T12:31:01Z","relation":"main_file"}],"date_created":"2018-08-28T12:30:15Z","date_updated":"2022-01-06T07:00:35Z","publication_status":"published","intvolume":"        82","article_type":"original","title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","year":"2010","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."},{"last_name":"Nordlund","first_name":"K.","full_name":"Nordlund, K."},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"},{"first_name":"W. G.","last_name":"Schmidt","full_name":"Schmidt, W. G."},{"full_name":"Rauls, E.","first_name":"E.","last_name":"Rauls"}],"doi":"10.1103/physrevb.82.094110","article_number":"094110","language":[{"iso":"eng"}],"file_date_updated":"2018-08-28T12:31:01Z","citation":{"short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>."},"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"55706","volume":82,"publisher":"American Physical Society (APS)","_id":"4204"},{"date_updated":"2022-01-06T07:00:35Z","status":"public","title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","year":"2010","conference":{"location":"Universidad Autónoma de Madrid (Spain)","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","start_date":"2010-04-14","end_date":"2010-04-16"},"author":[{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"user_id":"55706","_id":"4206","citation":{"mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","short":"J. Lindner, in: 2010.","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010."},"type":"conference_abstract","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-28T12:34:11Z"},{"date_updated":"2022-01-06T07:00:35Z","publication_status":"published","intvolume":"      1181","title":"Ion Beams and Nano-Engineering","status":"public","year":"2010","conference":{"name":"MRS Spring Meeting 2009","location":"San Francisco (USA)"},"publication_identifier":{"isbn":["978-1-60511-154-4"]},"user_id":"55706","editor":[{"full_name":"Ila, D.","first_name":"D.","last_name":"Ila"},{"last_name":"Kishimoto","first_name":"N. ","full_name":"Kishimoto, N. "},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"last_name":"Baglin","first_name":"J.","full_name":"Baglin, J."}],"volume":1181,"_id":"4207","publisher":"MRS Symposium Proceedings ","language":[{"iso":"eng"}],"citation":{"apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010.","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }"},"type":"book_editor","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-28T12:38:16Z"},{"citation":{"mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i>, vol. 209, 012017, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>.","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>. 2010;209. doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }","apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>, <i>209</i>. <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” <i>Journal of Physics: Conference Series</i>, vol. 209, 2010.","short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i> 209 (2010). <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>."},"file_date_updated":"2018-08-28T12:40:20Z","volume":209,"user_id":"55706","ddc":["530"],"publisher":"IOP Publishing","_id":"4208","has_accepted_license":"1","status":"public","department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:39:31Z","file":[{"file_id":"4209","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-28T12:40:20Z","file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","access_level":"closed","file_size":13011359,"date_created":"2018-08-28T12:40:20Z","creator":"hclaudia"}],"abstract":[{"text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface.","lang":"eng"}],"publication":"Journal of Physics: Conference Series","doi":"10.1088/1742-6596/209/1/012017","language":[{"iso":"eng"}],"article_number":"012017","article_type":"original","intvolume":"       209","publication_status":"published","date_updated":"2022-01-06T07:00:36Z","author":[{"first_name":"M","last_name":"Häberlen","full_name":"Häberlen, M"},{"first_name":"D","last_name":"Zhu","full_name":"Zhu, D"},{"full_name":"McAleese, C","last_name":"McAleese","first_name":"C"},{"full_name":"Kappers, M J","first_name":"M J","last_name":"Kappers"},{"last_name":"Humphreys","first_name":"C J","full_name":"Humphreys, C J"}],"publication_identifier":{"issn":["1742-6596"]},"year":"2010","title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers"},{"title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","year":"2010","author":[{"last_name":"Häberlen","first_name":"Maik","full_name":"Häberlen, Maik"},{"first_name":"Dandan","last_name":"Zhu","full_name":"Zhu, Dandan"},{"last_name":"McAleese","first_name":"Clifford","full_name":"McAleese, Clifford"},{"first_name":"Tongtong","last_name":"Zhu","full_name":"Zhu, Tongtong"},{"first_name":"Menno J.","last_name":"Kappers","full_name":"Kappers, Menno J."},{"full_name":"Humphreys, Colin J.","last_name":"Humphreys","first_name":"Colin J."}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","date_updated":"2022-01-06T07:00:36Z","article_type":"original","intvolume":"       247","language":[{"iso":"eng"}],"doi":"10.1002/pssb.200983537","issue":"7","publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties."}],"file":[{"creator":"hclaudia","date_created":"2018-08-28T12:43:31Z","file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","access_level":"closed","file_size":911931,"relation":"main_file","date_updated":"2018-08-28T12:43:31Z","file_id":"4211","content_type":"application/pdf","success":1}],"date_created":"2018-08-28T12:42:58Z","type":"journal_article","department":[{"_id":"15"}],"status":"public","has_accepted_license":"1","page":"1753-1756","_id":"4210","publisher":"Wiley","user_id":"55706","ddc":["530"],"volume":247,"file_date_updated":"2018-08-28T12:43:31Z","citation":{"chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>."}},{"date_created":"2018-08-28T12:46:49Z","file":[{"creator":"hclaudia","date_created":"2018-08-28T12:47:23Z","access_level":"closed","file_size":2391054,"file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","date_updated":"2018-08-28T12:47:23Z","relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4213"}],"department":[{"_id":"15"}],"type":"journal_article","issue":"3","publication":"Journal of Applied Physics","abstract":[{"text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions.","lang":"eng"}],"language":[{"iso":"eng"}],"article_number":"033523","doi":"10.1063/1.3460641","author":[{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"full_name":"Badcock, T. J.","last_name":"Badcock","first_name":"T. J."},{"full_name":"Moram, M. A.","first_name":"M. A.","last_name":"Moram"},{"full_name":"Hollander, J. L.","first_name":"J. L.","last_name":"Hollander"},{"full_name":"Kappers, M. J.","first_name":"M. J.","last_name":"Kappers"},{"first_name":"P.","last_name":"Dawson","full_name":"Dawson, P."},{"full_name":"Humphreys, C. J.","last_name":"Humphreys","first_name":"C. J."},{"first_name":"R. A.","last_name":"Oliver","full_name":"Oliver, R. A."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","year":"2010","article_type":"original","intvolume":"       108","publication_status":"published","date_updated":"2022-01-06T07:00:37Z","citation":{"bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i> 108, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>.","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>. 2010;108(3). doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>","short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","ieee":"M. Häberlen <i>et al.</i>, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 2010.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>, <i>108</i>(3). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>."},"file_date_updated":"2018-08-28T12:47:23Z","_id":"4212","publisher":"AIP Publishing","volume":108,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1"},{"publication_identifier":{"issn":["0022-0248"]},"author":[{"last_name":"Hao","first_name":"Rui","full_name":"Hao, Rui"},{"full_name":"Zhu, T.","last_name":"Zhu","first_name":"T."},{"full_name":"Häberlen, M.","last_name":"Häberlen","first_name":"M."},{"first_name":"T.Y.","last_name":"Chang","full_name":"Chang, T.Y."},{"full_name":"Kappers, M.J.","last_name":"Kappers","first_name":"M.J."},{"full_name":"Oliver, R.A.","last_name":"Oliver","first_name":"R.A."},{"first_name":"C.J.","last_name":"Humphreys","full_name":"Humphreys, C.J."},{"full_name":"Moram, M.A.","first_name":"M.A.","last_name":"Moram"}],"title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","year":"2010","intvolume":"       312","article_type":"original","date_updated":"2022-01-06T07:00:37Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/j.jcrysgro.2010.08.041","issue":"23","publication":"Journal of Crystal Growth","abstract":[{"lang":"eng","text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films."}],"date_created":"2018-08-28T12:49:39Z","file":[{"date_created":"2018-08-28T12:50:07Z","creator":"hclaudia","content_type":"application/pdf","success":1,"file_id":"4215","date_updated":"2018-08-28T12:50:07Z","relation":"main_file","access_level":"closed","file_size":1218752,"file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf"}],"department":[{"_id":"15"}],"type":"journal_article","status":"public","has_accepted_license":"1","_id":"4214","publisher":"Elsevier BV","page":"3536-3543","volume":312,"ddc":["530"],"user_id":"55706","citation":{"short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.","ieee":"R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543, 2010.","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>."},"file_date_updated":"2018-08-28T12:50:07Z"},{"publication_status":"published","date_updated":"2022-01-06T07:00:38Z","article_type":"original","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","year":"2010","author":[{"last_name":"Scholle","first_name":"Andreas","full_name":"Scholle, Andreas"},{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"},{"full_name":"Rauls, Eva","last_name":"Rauls","first_name":"Eva"},{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt"},{"full_name":"Gerstmann, Uwe","last_name":"Gerstmann","first_name":"Uwe"}],"publication_identifier":{"issn":["1662-9752"]},"doi":"10.4028/www.scientific.net/msf.645-648.403","language":[{"iso":"eng"}],"abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"publication":"Materials Science Forum","type":"journal_article","department":[{"_id":"15"}],"file":[{"access_level":"closed","file_size":583484,"file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf","date_updated":"2018-08-28T12:54:26Z","relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4217","creator":"hclaudia","date_created":"2018-08-28T12:54:26Z"}],"date_created":"2018-08-28T12:53:50Z","has_accepted_license":"1","status":"public","user_id":"55706","ddc":["530"],"volume":"645-648","page":"403-406","_id":"4216","publisher":"Trans Tech Publications","file_date_updated":"2018-08-28T12:54:26Z","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645</i>–<i>648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }"}},{"publisher":"Wiley","_id":"6619","page":"251-258","volume":82,"user_id":"49428","status":"public","citation":{"ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp. 251–258, 2010.","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3), 251–258. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>","short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010): 251–58. <a href=\"https://doi.org/10.1002/cite.200900169\">https://doi.org/10.1002/cite.200900169</a>.","mla":"Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>.","bibtex":"@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*}, volume={82}, DOI={<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>}, number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke, H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010}, pages={251–258} }","ama":"Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href=\"https://doi.org/10.1002/cite.200900169\">10.1002/cite.200900169</a>"},"language":[{"iso":"ger"}],"doi":"10.1002/cite.200900169","publication_identifier":{"issn":["0009-286X","1522-2640"]},"author":[{"first_name":"H.-J.","last_name":"Warnecke","full_name":"Warnecke, H.-J."},{"last_name":"Bothe","first_name":"D.","full_name":"Bothe, D."},{"id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"},{"last_name":"Berth","first_name":"Gerhard","full_name":"Berth, Gerhard","id":"53"},{"first_name":"K.-P.","last_name":"Hüsch","full_name":"Hüsch, K.-P."}],"year":"2010","title":"Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*","article_type":"original","intvolume":"        82","publication_status":"published","date_updated":"2022-01-06T07:03:13Z","date_created":"2019-01-10T10:13:09Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","issue":"3","publication":"Chemie Ingenieur Technik","abstract":[{"lang":"ger","text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe."}]},{"status":"public","publisher":"Elsevier BV","_id":"35345","page":"858-864","volume":84,"user_id":"466","citation":{"ieee":"J. Pérez Quiñones, R. Szopko, C. Schmidt, and C. Peniche Covas, “Novel drug delivery systems: Chitosan conjugates covalently attached to steroids with potential anticancer and agrochemical activity,” <i>Carbohydrate Polymers</i>, vol. 84, no. 3, pp. 858–864, 2010, doi: <a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">10.1016/j.carbpol.2010.12.007</a>.","apa":"Pérez Quiñones, J., Szopko, R., Schmidt, C., &#38; Peniche Covas, C. (2010). Novel drug delivery systems: Chitosan conjugates covalently attached to steroids with potential anticancer and agrochemical activity. <i>Carbohydrate Polymers</i>, <i>84</i>(3), 858–864. <a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">https://doi.org/10.1016/j.carbpol.2010.12.007</a>","chicago":"Pérez Quiñones, Javier, Richard Szopko, Claudia Schmidt, and Carlos Peniche Covas. “Novel Drug Delivery Systems: Chitosan Conjugates Covalently Attached to Steroids with Potential Anticancer and Agrochemical Activity.” <i>Carbohydrate Polymers</i> 84, no. 3 (2010): 858–64. <a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">https://doi.org/10.1016/j.carbpol.2010.12.007</a>.","short":"J. Pérez Quiñones, R. Szopko, C. Schmidt, C. Peniche Covas, Carbohydrate Polymers 84 (2010) 858–864.","mla":"Pérez Quiñones, Javier, et al. “Novel Drug Delivery Systems: Chitosan Conjugates Covalently Attached to Steroids with Potential Anticancer and Agrochemical Activity.” <i>Carbohydrate Polymers</i>, vol. 84, no. 3, Elsevier BV, 2010, pp. 858–64, doi:<a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">10.1016/j.carbpol.2010.12.007</a>.","bibtex":"@article{Pérez Quiñones_Szopko_Schmidt_Peniche Covas_2010, title={Novel drug delivery systems: Chitosan conjugates covalently attached to steroids with potential anticancer and agrochemical activity}, volume={84}, DOI={<a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">10.1016/j.carbpol.2010.12.007</a>}, number={3}, journal={Carbohydrate Polymers}, publisher={Elsevier BV}, author={Pérez Quiñones, Javier and Szopko, Richard and Schmidt, Claudia and Peniche Covas, Carlos}, year={2010}, pages={858–864} }","ama":"Pérez Quiñones J, Szopko R, Schmidt C, Peniche Covas C. Novel drug delivery systems: Chitosan conjugates covalently attached to steroids with potential anticancer and agrochemical activity. <i>Carbohydrate Polymers</i>. 2010;84(3):858-864. doi:<a href=\"https://doi.org/10.1016/j.carbpol.2010.12.007\">10.1016/j.carbpol.2010.12.007</a>"},"quality_controlled":"1","author":[{"full_name":"Pérez Quiñones, Javier","last_name":"Pérez Quiñones","first_name":"Javier"},{"first_name":"Richard","last_name":"Szopko","full_name":"Szopko, Richard"},{"id":"466","full_name":"Schmidt, Claudia","last_name":"Schmidt","orcid":"0000-0003-3179-9997","first_name":"Claudia"},{"last_name":"Peniche Covas","first_name":"Carlos","full_name":"Peniche Covas, Carlos"}],"publication_identifier":{"issn":["0144-8617"]},"year":"2010","title":"Novel drug delivery systems: Chitosan conjugates covalently attached to steroids with potential anticancer and agrochemical activity","intvolume":"        84","article_type":"original","date_updated":"2023-01-07T11:31:00Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/j.carbpol.2010.12.007","publication":"Carbohydrate Polymers","issue":"3","date_created":"2023-01-06T13:10:01Z","department":[{"_id":"2"},{"_id":"315"}],"type":"journal_article","keyword":["Materials Chemistry","Polymers and Plastics","Organic Chemistry"]},{"issue":"3","publication":"Langmuir","date_created":"2023-01-06T13:11:12Z","department":[{"_id":"2"},{"_id":"315"}],"type":"journal_article","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"author":[{"full_name":"Medronho, B.","first_name":"B.","last_name":"Medronho"},{"id":"466","full_name":"Schmidt, Claudia","orcid":"0000-0003-3179-9997","first_name":"Claudia","last_name":"Schmidt"},{"first_name":"U.","last_name":"Olsson","full_name":"Olsson, U."},{"last_name":"Miguel","first_name":"M. G.","full_name":"Miguel, M. G."}],"publication_identifier":{"issn":["0743-7463","1520-5827"]},"year":"2010","title":"Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy","intvolume":"        26","article_type":"original","date_updated":"2023-01-07T11:29:31Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1021/la903682p","citation":{"apa":"Medronho, B., Schmidt, C., Olsson, U., &#38; Miguel, M. G. (2010). Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy. <i>Langmuir</i>, <i>26</i>(3), 1477–1481. <a href=\"https://doi.org/10.1021/la903682p\">https://doi.org/10.1021/la903682p</a>","ieee":"B. Medronho, C. Schmidt, U. Olsson, and M. G. Miguel, “Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy,” <i>Langmuir</i>, vol. 26, no. 3, pp. 1477–1481, 2010, doi: <a href=\"https://doi.org/10.1021/la903682p\">10.1021/la903682p</a>.","chicago":"Medronho, B., Claudia Schmidt, U. Olsson, and M. G. Miguel. “Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy.” <i>Langmuir</i> 26, no. 3 (2010): 1477–81. <a href=\"https://doi.org/10.1021/la903682p\">https://doi.org/10.1021/la903682p</a>.","short":"B. Medronho, C. Schmidt, U. Olsson, M.G. Miguel, Langmuir 26 (2010) 1477–1481.","mla":"Medronho, B., et al. “Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy.” <i>Langmuir</i>, vol. 26, no. 3, American Chemical Society (ACS), 2010, pp. 1477–81, doi:<a href=\"https://doi.org/10.1021/la903682p\">10.1021/la903682p</a>.","ama":"Medronho B, Schmidt C, Olsson U, Miguel MG. Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy. <i>Langmuir</i>. 2010;26(3):1477-1481. doi:<a href=\"https://doi.org/10.1021/la903682p\">10.1021/la903682p</a>","bibtex":"@article{Medronho_Schmidt_Olsson_Miguel_2010, title={Size Determination of Shear-Induced Multilamellar Vesicles by Rheo-NMR Spectroscopy}, volume={26}, DOI={<a href=\"https://doi.org/10.1021/la903682p\">10.1021/la903682p</a>}, number={3}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Medronho, B. and Schmidt, Claudia and Olsson, U. and Miguel, M. G.}, year={2010}, pages={1477–1481} }"},"quality_controlled":"1","status":"public","publisher":"American Chemical Society (ACS)","_id":"35348","page":"1477-1481","volume":26,"user_id":"466"},{"quality_controlled":"1","citation":{"mla":"Medronho, B., et al. “Shear-Induced Defect Formation in a Nonionic Lamellar Phase.” <i>Langmuir</i>, vol. 26, no. 13, American Chemical Society (ACS), 2010, pp. 11304–13, doi:<a href=\"https://doi.org/10.1021/la100627z\">10.1021/la100627z</a>.","bibtex":"@article{Medronho_Rodrigues_Miguel_Olsson_Schmidt_2010, title={Shear-Induced Defect Formation in a Nonionic Lamellar Phase}, volume={26}, DOI={<a href=\"https://doi.org/10.1021/la100627z\">10.1021/la100627z</a>}, number={13}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Medronho, B. and Rodrigues, M. and Miguel, M. G. and Olsson, U. and Schmidt, Claudia}, year={2010}, pages={11304–11313} }","ama":"Medronho B, Rodrigues M, Miguel MG, Olsson U, Schmidt C. Shear-Induced Defect Formation in a Nonionic Lamellar Phase. <i>Langmuir</i>. 2010;26(13):11304-11313. doi:<a href=\"https://doi.org/10.1021/la100627z\">10.1021/la100627z</a>","ieee":"B. Medronho, M. Rodrigues, M. G. Miguel, U. Olsson, and C. Schmidt, “Shear-Induced Defect Formation in a Nonionic Lamellar Phase,” <i>Langmuir</i>, vol. 26, no. 13, pp. 11304–11313, 2010, doi: <a href=\"https://doi.org/10.1021/la100627z\">10.1021/la100627z</a>.","apa":"Medronho, B., Rodrigues, M., Miguel, M. G., Olsson, U., &#38; Schmidt, C. (2010). Shear-Induced Defect Formation in a Nonionic Lamellar Phase. <i>Langmuir</i>, <i>26</i>(13), 11304–11313. <a href=\"https://doi.org/10.1021/la100627z\">https://doi.org/10.1021/la100627z</a>","short":"B. Medronho, M. Rodrigues, M.G. Miguel, U. Olsson, C. Schmidt, Langmuir 26 (2010) 11304–11313.","chicago":"Medronho, B., M. Rodrigues, M. G. Miguel, U. Olsson, and Claudia Schmidt. “Shear-Induced Defect Formation in a Nonionic Lamellar Phase.” <i>Langmuir</i> 26, no. 13 (2010): 11304–13. <a href=\"https://doi.org/10.1021/la100627z\">https://doi.org/10.1021/la100627z</a>."},"status":"public","user_id":"466","volume":26,"page":"11304-11313","publisher":"American Chemical Society (ACS)","_id":"35347","publication":"Langmuir","issue":"13","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"type":"journal_article","department":[{"_id":"2"},{"_id":"315"}],"date_created":"2023-01-06T13:10:51Z","publication_status":"published","date_updated":"2023-01-07T11:28:41Z","article_type":"original","intvolume":"        26","year":"2010","title":"Shear-Induced Defect Formation in a Nonionic Lamellar Phase","author":[{"full_name":"Medronho, B.","first_name":"B.","last_name":"Medronho"},{"full_name":"Rodrigues, M.","last_name":"Rodrigues","first_name":"M."},{"first_name":"M. G.","last_name":"Miguel","full_name":"Miguel, M. G."},{"last_name":"Olsson","first_name":"U.","full_name":"Olsson, U."},{"id":"466","full_name":"Schmidt, Claudia","first_name":"Claudia","orcid":"0000-0003-3179-9997","last_name":"Schmidt"}],"publication_identifier":{"issn":["0743-7463","1520-5827"]},"doi":"10.1021/la100627z","language":[{"iso":"eng"}]},{"citation":{"bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }","ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>.","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>"},"status":"public","page":"2552-2555","publisher":"Elsevier BV","_id":"7993","user_id":"254","volume":42,"publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","date_created":"2019-02-21T14:43:30Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"313"}],"title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","year":"2010","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Piegdon, Karoline A.","last_name":"Piegdon","first_name":"Karoline A."},{"full_name":"Offer, Matthias","last_name":"Offer","first_name":"Matthias"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"last_name":"Urbanski","first_name":"Martin","full_name":"Urbanski, Martin"},{"full_name":"Hoischen, Andreas","first_name":"Andreas","last_name":"Hoischen"},{"first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254"},{"first_name":"Stefan","last_name":"Declair","full_name":"Declair, Stefan"},{"full_name":"Förstner, Jens","last_name":"Förstner","first_name":"Jens"},{"full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"first_name":"Cedrik","last_name":"Meier","full_name":"Meier, Cedrik"}],"date_updated":"2023-01-10T13:59:58Z","publication_status":"published","intvolume":"        42","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.051"},{"publication":"Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen","citation":{"mla":"Schlegel-Matthies, Kirsten. “Überschuldung - Bildungsbezogene Perspektive.” <i>Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen</i>, edited by Christine Müller et al., Lit-Verlag, 2010, pp. 247–50.","bibtex":"@inbook{Schlegel-Matthies_2010, place={Münster, Berlin}, title={Überschuldung - Bildungsbezogene Perspektive}, booktitle={Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen}, publisher={Lit-Verlag}, author={Schlegel-Matthies, Kirsten}, editor={Müller, Christine and Schulz, Franziska and Thien, Ulrich}, year={2010}, pages={247–250} }","ama":"Schlegel-Matthies K. Überschuldung - Bildungsbezogene Perspektive. In: Müller C, Schulz F, Thien U, eds. <i>Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen</i>. Lit-Verlag; 2010:247-250.","ieee":"K. Schlegel-Matthies, “Überschuldung - Bildungsbezogene Perspektive,” in <i>Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen</i>, C. Müller, F. Schulz, and U. Thien, Eds. Münster, Berlin: Lit-Verlag, 2010, pp. 247–250.","apa":"Schlegel-Matthies, K. (2010). Überschuldung - Bildungsbezogene Perspektive. In C. Müller, F. Schulz, &#38; U. Thien (Eds.), <i>Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen</i> (pp. 247–250). Lit-Verlag.","short":"K. Schlegel-Matthies, in: C. Müller, F. Schulz, U. Thien (Eds.), Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen, Lit-Verlag, Münster, Berlin, 2010, pp. 247–250.","chicago":"Schlegel-Matthies, Kirsten. “Überschuldung - Bildungsbezogene Perspektive.” In <i>Auf dem Weg zum Jugendintegrationskonzept. Grundlagen und Herausforderungen angesichts veränderter Lebenslagen junger Menschen</i>, edited by Christine Müller, Franziska Schulz, and Ulrich Thien, 247–50. Münster, Berlin: Lit-Verlag, 2010."},"date_created":"2023-01-11T11:13:01Z","place":"Münster, Berlin","type":"book_chapter","department":[{"_id":"35"},{"_id":"17"},{"_id":"22"},{"_id":"396"}],"title":"Überschuldung - Bildungsbezogene Perspektive","year":"2010","status":"public","publication_identifier":{"isbn":["9783643105103"]},"author":[{"id":"459","full_name":"Schlegel-Matthies, Kirsten","first_name":"Kirsten","last_name":"Schlegel-Matthies"}],"publication_status":"published","date_updated":"2023-01-11T11:25:57Z","page":"247 - 250","_id":"36036","publisher":"Lit-Verlag","language":[{"iso":"ger"}],"user_id":"459","editor":[{"first_name":"Christine","last_name":"Müller","full_name":"Müller, Christine"},{"full_name":"Schulz, Franziska","first_name":"Franziska","last_name":"Schulz"},{"full_name":"Thien, Ulrich","first_name":"Ulrich","last_name":"Thien"}]},{"publication":"Der Handballschiedsrichter","citation":{"apa":"Dux, C., Klassen, M., Kukuk, M., Liebert, U., &#38; Follmert, B. (2010). Fördern im vertrauten Umfeld. <i>Der Handballschiedsrichter</i>, <i>4</i>, 8–11.","ieee":"C. Dux, M. Klassen, M. Kukuk, U. Liebert, and B. Follmert, “Fördern im vertrauten Umfeld,” <i>Der Handballschiedsrichter</i>, vol. 4, pp. 8–11, 2010.","short":"C. Dux, M. Klassen, M. Kukuk, U. Liebert, B. Follmert, Der Handballschiedsrichter 4 (2010) 8–11.","chicago":"Dux, Christian, Marco Klassen, Marc Kukuk, Udo Liebert, and Bennett Follmert. “Fördern im vertrauten Umfeld.” <i>Der Handballschiedsrichter</i> 4 (2010): 8–11.","mla":"Dux, Christian, et al. “Fördern im vertrauten Umfeld.” <i>Der Handballschiedsrichter</i>, vol. 4, 2010, pp. 8–11.","ama":"Dux C, Klassen M, Kukuk M, Liebert U, Follmert B. Fördern im vertrauten Umfeld. <i>Der Handballschiedsrichter</i>. 2010;4:8-11.","bibtex":"@article{Dux_Klassen_Kukuk_Liebert_Follmert_2010, title={Fördern im vertrauten Umfeld}, volume={4}, journal={Der Handballschiedsrichter}, author={Dux, Christian and Klassen, Marco and Kukuk, Marc and Liebert, Udo and Follmert, Bennett}, year={2010}, pages={8–11} }"},"type":"journal_article","department":[{"_id":"175"}],"date_created":"2024-01-30T13:20:03Z","publication_status":"published","date_updated":"2024-02-27T11:07:10Z","intvolume":"         4","year":"2010","status":"public","title":"Fördern im vertrauten Umfeld","author":[{"full_name":"Dux, Christian","first_name":"Christian","last_name":"Dux"},{"full_name":"Klassen, Marco","last_name":"Klassen","first_name":"Marco"},{"id":"290","last_name":"Kukuk","first_name":"Marc","full_name":"Kukuk, Marc"},{"first_name":"Udo","last_name":"Liebert","full_name":"Liebert, Udo"},{"first_name":"Bennett","last_name":"Follmert","full_name":"Follmert, Bennett"}],"user_id":"290","volume":4,"page":"8-11","_id":"51034","language":[{"iso":"ger"}]},{"page":"145–158","_id":"54942","publisher":"S. Karger AG","language":[{"iso":"eng"}],"user_id":"49428","doi":"10.1159/000272059","volume":25,"title":"Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis","year":"2010","status":"public","author":[{"full_name":"Huber, Regina","last_name":"Huber","first_name":"Regina"},{"id":"49428","full_name":"Krueger, Bettina","first_name":"Bettina","last_name":"Krueger","orcid":"0000-0001-5351-1785"},{"last_name":"Diakov","first_name":"Alexei","full_name":"Diakov, Alexei"},{"first_name":"Judit","last_name":"Korbmacher","full_name":"Korbmacher, Judit"},{"last_name":"Haerteis","first_name":"Silke","full_name":"Haerteis, Silke"},{"full_name":"Einsiedel, Jürgen","first_name":"Jürgen","last_name":"Einsiedel"},{"full_name":"Gmeiner, Peter","last_name":"Gmeiner","first_name":"Peter"},{"full_name":"Azad, Abul","last_name":"Azad","first_name":"Abul"},{"full_name":"Cuppens, Harry","last_name":"Cuppens","first_name":"Harry"},{"full_name":"Cassiman, Jean-Jaques","last_name":"Cassiman","first_name":"Jean-Jaques"},{"full_name":"Korbmacher, Christoph","last_name":"Korbmacher","first_name":"Christoph"},{"full_name":"Rauh, Robert","first_name":"Robert","last_name":"Rauh"}],"date_updated":"2024-06-30T13:57:07Z","intvolume":"        25","date_created":"2024-06-30T13:56:57Z","type":"journal_article","department":[{"_id":"35"},{"_id":"22"}],"publication":"Cellular Physiology and Biochemistry","issue":"001","citation":{"bibtex":"@article{Huber_Krueger_Diakov_Korbmacher_Haerteis_Einsiedel_Gmeiner_Azad_Cuppens_Cassiman_et al._2010, title={Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis}, volume={25}, DOI={<a href=\"https://doi.org/10.1159/000272059\">10.1159/000272059</a>}, number={001}, journal={Cellular Physiology and Biochemistry}, publisher={S. Karger AG}, author={Huber, Regina and Krueger, Bettina and Diakov, Alexei and Korbmacher, Judit and Haerteis, Silke and Einsiedel, Jürgen and Gmeiner, Peter and Azad, Abul and Cuppens, Harry and Cassiman, Jean-Jaques and et al.}, year={2010}, pages={145–158} }","ama":"Huber R, Krueger B, Diakov A, et al. Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis. <i>Cellular Physiology and Biochemistry</i>. 2010;25(001):145–158. doi:<a href=\"https://doi.org/10.1159/000272059\">10.1159/000272059</a>","mla":"Huber, Regina, et al. “Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis.” <i>Cellular Physiology and Biochemistry</i>, vol. 25, no. 001, S. Karger AG, 2010, pp. 145–158, doi:<a href=\"https://doi.org/10.1159/000272059\">10.1159/000272059</a>.","short":"R. Huber, B. Krueger, A. Diakov, J. Korbmacher, S. Haerteis, J. Einsiedel, P. Gmeiner, A. Azad, H. Cuppens, J.-J. Cassiman, C. Korbmacher, R. Rauh, Cellular Physiology and Biochemistry 25 (2010) 145–158.","chicago":"Huber, Regina, Bettina Krueger, Alexei Diakov, Judit Korbmacher, Silke Haerteis, Jürgen Einsiedel, Peter Gmeiner, et al. “Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis.” <i>Cellular Physiology and Biochemistry</i> 25, no. 001 (2010): 145–158. <a href=\"https://doi.org/10.1159/000272059\">https://doi.org/10.1159/000272059</a>.","ieee":"R. Huber <i>et al.</i>, “Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis,” <i>Cellular Physiology and Biochemistry</i>, vol. 25, no. 001, pp. 145–158, 2010, doi: <a href=\"https://doi.org/10.1159/000272059\">10.1159/000272059</a>.","apa":"Huber, R., Krueger, B., Diakov, A., Korbmacher, J., Haerteis, S., Einsiedel, J., Gmeiner, P., Azad, A., Cuppens, H., Cassiman, J.-J., Korbmacher, C., &#38; Rauh, R. (2010). Functional Characterization of a Partial Loss-of-Function Mutation of the Epithelial Sodium Channel (ENaC) Associated with Atypical Cystic Fibrosis. <i>Cellular Physiology and Biochemistry</i>, <i>25</i>(001), 145–158. <a href=\"https://doi.org/10.1159/000272059\">https://doi.org/10.1159/000272059</a>"},"abstract":[{"lang":"eng","text":"Loss-of-function mutations of the epithelial sodium channel (ENaC) may contribute to pulmonary symptoms resembling those of patients with atypical cystic fibrosis (CF). Recently, we identified a loss-of-function mutation in the alpha-subunit of ENaC (alphaF61L) in an atypical CF patient without mutations in CFTR. To investigate the functional effect of this mutation, we expressed human wild-type alpha beta gamma-ENaC or mutant alpha(F61L) beta gamma-ENaC in Xenopus laevis oocytes. The alphaF61L mutation reduced the ENaC mediated whole-cell currents by approximately 90%. In contrast, the mutation decreased channel surface expression only by approximately 40% and did not alter the single-channel conductance. These findings indicate that the major effect of the mutation is a reduction of the average channel open probability (P(o)). This was confirmed by experiments using the betaS520C mutant ENaC which can be converted to a channel with a P(o) of nearly one, and by experiments using chymotrypsin to proteolytically activate the channel. These experiments revealed that the mutation reduced the average P(o) of ENaC by approximately 75%. Na(+) self inhibition of the mutant channel was significantly enhanced, but the observed effect was too small to account for the large reduction in average channel P(o). The ENaC-activator S3969 partially rescued the loss-of-function phenotype of the alphaF61L mutation. We conclude that the alphaF61L mutation may contribute to respiratory symptoms in atypical CF patients."}]}]