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Preparation and characterization of epitaxial Fe(001) thin films on GaAs(001)-based LED for spin injection. <i>Superlattices and Microstructures</i>. 2004:313-320. doi:<a href=\"https://doi.org/10.1016/j.spmi.2004.11.004\">10.1016/j.spmi.2004.11.004</a>","apa":"Schuster, E., Keune, W., Lo, F.-Y., Reuter, D., Wieck, A., &#38; Westerholt, K. (2004). 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Schmidt, M. Vitzethum, R. Fix, U. Scholz, S. Malzer, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2004) 110–114.","ama":"Schmidt R, Vitzethum M, Fix R, et al. Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:110-114. doi:<a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">10.1016/j.physe.2004.08.034</a>","chicago":"Schmidt, R., M. Vitzethum, R. Fix, U. Scholz, S. Malzer, C. Metzner, P. Kailuweit, et al. “Electroluminescence of Single-Dot Nano-LEDs—Optical Spectroscopy of an Electrically Tunable Few-Electron/Hole System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 110–14. <a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">https://doi.org/10.1016/j.physe.2004.08.034</a>.","ieee":"R. 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Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 872–875, 2004.","chicago":"Reuter, Dirk, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 872–75. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>.","ama":"Reuter D, Seekamp A, Wieck A. Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:872-875. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 872–75, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>.","bibtex":"@article{Reuter_Seekamp_Wieck_2004, title={Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Seekamp, A and Wieck, A.D}, year={2004}, pages={872–875} }","short":"D. 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Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 872–875. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>"},"_id":"8699","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","language":[{"iso":"eng"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article","status":"public"},{"language":[{"iso":"eng"}],"_id":"8700","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article","title":"High frequency conductance of a quantum point contact","doi":"10.1016/j.physe.2003.11.266","date_updated":"2022-01-06T07:03:59Z","date_created":"2019-03-27T11:51:46Z","author":[{"first_name":"J.","last_name":"Regul","full_name":"Regul, J."},{"first_name":"F.","last_name":"Hohls","full_name":"Hohls, F."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A.D.","first_name":"A.D."},{"first_name":"R.J.","last_name":"Haug","full_name":"Haug, R.J."}],"year":"2004","page":"272-275","citation":{"bibtex":"@article{Regul_Hohls_Reuter_Wieck_Haug_2004, title={High frequency conductance of a quantum point contact}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">10.1016/j.physe.2003.11.266</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Regul, J. and Hohls, F. and Reuter, Dirk and Wieck, A.D. and Haug, R.J.}, year={2004}, pages={272–275} }","short":"J. 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Hansen, Physica E: Low-Dimensional Systems and Nanostructures (2004) 725–728.","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 725–28, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>.","chicago":"Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W. Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 725–28. <a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">https://doi.org/10.1016/j.physe.2003.12.109</a>.","ieee":"D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. 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