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W., Stroucken, T., Knorr, A., Hader, J., Rossi, F., &#38; Thomas, P. (1996). Coherent Dynamics of Semiconductor Heterostructures. In S. W. Koch (Ed.), <i>Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers</i> (pp. 81–130). World Scientific. <a href=\"https://doi.org/10.1142/9789812830487_0003\">https://doi.org/10.1142/9789812830487_0003</a>","short":"T. Meier, S.W. Koch, T. Stroucken, A. Knorr, J. Hader, F. Rossi, P. Thomas, in: S.W. Koch (Ed.), Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers, World Scientific, Singapore, 1996, pp. 81–130.","mla":"Meier, Torsten, et al. “Coherent Dynamics of Semiconductor Heterostructures.” <i>Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers</i>, edited by S.W. 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Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells. <i>Journal of the Optical Society of America B</i>, <i>13</i>(5), 1026–1030. <a href=\"https://doi.org/10.1364/JOSAB.13.001026\">https://doi.org/10.1364/JOSAB.13.001026</a>","bibtex":"@article{Meier_Bott_Mayer_Smith_Heuckeroth_Hübner_Kuhl_Schulze_Lindberg_Koch_et al._1996, title={Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells}, volume={13}, DOI={<a href=\"https://doi.org/10.1364/JOSAB.13.001026\">10.1364/JOSAB.13.001026</a>}, number={5}, journal={Journal of the Optical Society of America B}, publisher={Optica Publishing Group}, author={Meier, Torsten and Bott, K. and Mayer, E.J. and Smith, G.O. and Heuckeroth, V. and Hübner, M. and Kuhl, J. and Schulze, A. and Lindberg, M. and Koch, S.W. and et al.}, year={1996}, pages={1026–1030} }","short":"T. Meier, K. Bott, E.J. Mayer, G.O. Smith, V. Heuckeroth, M. Hübner, J. Kuhl, A. Schulze, M. Lindberg, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Journal of the Optical Society of America B 13 (1996) 1026–1030.","mla":"Meier, Torsten, et al. “Dephasing of Interacting Heavy-Hole and Light-Hole Excitons in GaAs Quantum Wells.” <i>Journal of the Optical Society of America B</i>, vol. 13, no. 5, Optica Publishing Group, 1996, pp. 1026–30, doi:<a href=\"https://doi.org/10.1364/JOSAB.13.001026\">10.1364/JOSAB.13.001026</a>.","ama":"Meier T, Bott K, Mayer EJ, et al. Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells. <i>Journal of the Optical Society of America B</i>. 1996;13(5):1026-1030. doi:<a href=\"https://doi.org/10.1364/JOSAB.13.001026\">10.1364/JOSAB.13.001026</a>","chicago":"Meier, Torsten, K. Bott, E.J. Mayer, G.O. Smith, V. Heuckeroth, M. Hübner, J. Kuhl, et al. “Dephasing of Interacting Heavy-Hole and Light-Hole Excitons in GaAs Quantum Wells.” <i>Journal of the Optical Society of America B</i> 13, no. 5 (1996): 1026–30. <a href=\"https://doi.org/10.1364/JOSAB.13.001026\">https://doi.org/10.1364/JOSAB.13.001026</a>.","ieee":"T. Meier <i>et al.</i>, “Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells,” <i>Journal of the Optical Society of America B</i>, vol. 13, no. 5, pp. 1026–1030, 1996, doi: <a href=\"https://doi.org/10.1364/JOSAB.13.001026\">10.1364/JOSAB.13.001026</a>."},"year":"1996","volume":13,"author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"first_name":"K.","last_name":"Bott","full_name":"Bott, K."},{"last_name":"Mayer","full_name":"Mayer, E.J.","first_name":"E.J."},{"first_name":"G.O.","last_name":"Smith","full_name":"Smith, G.O."},{"full_name":"Heuckeroth, V.","last_name":"Heuckeroth","first_name":"V."},{"first_name":"M.","full_name":"Hübner, M.","last_name":"Hübner"},{"first_name":"J.","last_name":"Kuhl","full_name":"Kuhl, J."},{"full_name":"Schulze, A.","last_name":"Schulze","first_name":"A."},{"first_name":"M.","last_name":"Lindberg","full_name":"Lindberg, M."},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"full_name":"Hey, R.","last_name":"Hey","first_name":"R."},{"full_name":"Ploog, K.","last_name":"Ploog","first_name":"K."}],"date_created":"2023-04-05T13:45:07Z","publisher":"Optica Publishing Group","date_updated":"2023-04-05T13:45:14Z","doi":"10.1364/JOSAB.13.001026","main_file_link":[{"url":"https://opg.optica.org/josab/abstract.cfm?uri=josab-13-5-1026"}],"title":"Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells","publication":"Journal of the Optical Society of America B","type":"journal_article","status":"public","abstract":[{"lang":"eng","text":"We describe a novel three-pulse degenerate four-wave mixing configuration that permits the direct observation of the coherence between the σ+ and the σ− exciton states in a GaAs quantum well excited in a two-photon process. It is found that the phase coherence between the two single heavy-hole exciton states decays with a time constant that is considerably longer than the dephasing time of the coherence between these states and the ground state (interband coherence). All the experimental data are well described by numerical solutions of the optical Bloch equations for a phenomenological multilevel model."}],"department":[{"_id":"293"}],"user_id":"49063","_id":"43413","extern":"1","language":[{"iso":"eng"}]},{"publisher":"New York","date_created":"2023-04-14T22:29:03Z","title":"On the Observability of dynamic localization in semiconductor superlattices using optical spectroscopy","year":"1996","language":[{"iso":"eng"}],"publication":"Hot Carriers in Semiconductors","abstract":[{"text":"During the last decade, a variety of field-induced coherent phenomena in semiconductor superlattices has received considerable attention both from a theoretical and from an experimental point of view. For the case of a static applied electric field, the existence of Bloch oscillations has been predicted theoretically and confirmed by means of different experimental techniques of nonlinear optical spectroscopy.","lang":"eng"}],"date_updated":"2023-04-14T22:34:45Z","author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"first_name":"F.","last_name":"Rossi","full_name":"Rossi, F."},{"first_name":"K.-C","last_name":"Je","full_name":"Je, K.-C"},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."}],"main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4613-0401-2_46"}],"conference":{"location":"Chicago","name":"Proceedings of 9th Conference on Hot Carriers, 1995"},"doi":"10.1007/978-1-4613-0401-2_46","publication_status":"published","publication_identifier":{"isbn":["978-1-4613-8035-1"]},"place":"Plenum Press","citation":{"ieee":"T. 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New York; 1996:195-197. doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_46\">10.1007/978-1-4613-0401-2_46</a>","bibtex":"@inbook{Meier_Rossi_Je_Hader_Thomas_Koch_1996, place={Plenum Press}, title={On the Observability of dynamic localization in semiconductor superlattices using optical spectroscopy}, DOI={<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_46\">10.1007/978-1-4613-0401-2_46</a>}, booktitle={Hot Carriers in Semiconductors}, publisher={New York}, author={Meier, Torsten and Rossi, F. and Je, K.-C and Hader, J. and Thomas, P. and Koch, S.W.}, editor={Hess, K.}, year={1996}, pages={195–197} }","mla":"Meier, Torsten, et al. “On the Observability of Dynamic Localization in Semiconductor Superlattices Using Optical Spectroscopy.” <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, New York, 1996, pp. 195–97, doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_46\">10.1007/978-1-4613-0401-2_46</a>.","short":"T. Meier, F. Rossi, K.-C. Je, J. Hader, P. 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New York. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_46\">https://doi.org/10.1007/978-1-4613-0401-2_46</a>"},"page":"195-197","_id":"43553","user_id":"49063","department":[{"_id":"293"}],"extern":"1","type":"book_chapter","editor":[{"last_name":"Hess","full_name":"Hess, K.","first_name":"K."}],"status":"public"},{"publication":"Proceedings of the 23rd ICPS","type":"conference","status":"public","editor":[{"full_name":"Scheffler, M.","last_name":"Scheffler","first_name":"M."},{"first_name":"R.","last_name":"Zimmermann","full_name":"Zimmermann, R."}],"department":[{"_id":"293"}],"user_id":"49063","_id":"43617","language":[{"iso":"eng"}],"extern":"1","publication_status":"published","page":"1775-1778","citation":{"apa":"Meier, T., Rossi, F., Gulia, M., Selbmann, P. E., Molinari, E., Thomas, P., Thomas, P., &#38; Koch, S. W. (1996). Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing. In M. Scheffler &#38; R. Zimmermann (Eds.), <i>Proceedings of the 23rd ICPS</i> (pp. 1775–1778). World Scientific.","mla":"Meier, Torsten, et al. “Microscopic Theory of the Bloch-Oscillation Dynamics in Semiconductor Superlattices: Intra- versus Interband Dephasing.” <i>Proceedings of the 23rd ICPS</i>, edited by M. Scheffler and R. Zimmermann, World Scientific, 1996, pp. 1775–78.","bibtex":"@inproceedings{Meier_Rossi_Gulia_Selbmann_Molinari_Thomas_Thomas_Koch_1996, place={Singapore}, title={Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing}, booktitle={Proceedings of the 23rd ICPS}, publisher={World Scientific}, author={Meier, Torsten and Rossi, F. and Gulia, M. and Selbmann, P.E. and Molinari, E. and Thomas, P. and Thomas, P. and Koch, S.W.}, editor={Scheffler, M. and Zimmermann, R.}, year={1996}, pages={1775–1778} }","short":"T. Meier, F. Rossi, M. Gulia, P.E. Selbmann, E. Molinari, P. Thomas, P. Thomas, S.W. Koch, in: M. Scheffler, R. Zimmermann (Eds.), Proceedings of the 23rd ICPS, World Scientific, Singapore, 1996, pp. 1775–1778.","ama":"Meier T, Rossi F, Gulia M, et al. Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing. In: Scheffler M, Zimmermann R, eds. <i>Proceedings of the 23rd ICPS</i>. World Scientific; 1996:1775-1778.","ieee":"T. Meier <i>et al.</i>, “Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing,” in <i>Proceedings of the 23rd ICPS</i>, Berlin, 1996, pp. 1775–1778.","chicago":"Meier, Torsten, F. Rossi, M. Gulia, P.E. Selbmann, E. Molinari, P. Thomas, P. Thomas, and S.W. Koch. “Microscopic Theory of the Bloch-Oscillation Dynamics in Semiconductor Superlattices: Intra- versus Interband Dephasing.” In <i>Proceedings of the 23rd ICPS</i>, edited by M. Scheffler and R. Zimmermann, 1775–78. Singapore: World Scientific, 1996."},"year":"1996","place":"Singapore","date_created":"2023-04-15T01:02:36Z","author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten"},{"full_name":"Rossi, F.","last_name":"Rossi","first_name":"F."},{"first_name":"M.","full_name":"Gulia, M.","last_name":"Gulia"},{"first_name":"P.E.","last_name":"Selbmann","full_name":"Selbmann, P.E."},{"last_name":"Molinari","full_name":"Molinari, E.","first_name":"E."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"publisher":"World Scientific","date_updated":"2023-04-15T01:02:50Z","conference":{"location":"Berlin","name":"The Physics of Semiconductors, 1995"},"title":"Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing"},{"volume":53,"author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"first_name":"J.","full_name":"Feldmann, J.","last_name":"Feldmann"},{"first_name":"P.","last_name":"Thomas","full_name":"Thomas, P."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"E.O.","full_name":"Göbel, E.O.","last_name":"Göbel"},{"last_name":"Goosen","full_name":"Goosen,  K.W.","first_name":" K.W."},{"first_name":"J.M.","full_name":"Kuo, J.M.","last_name":"Kuo"},{"full_name":"Kopf, R.F.","last_name":"Kopf","first_name":"R.F."}],"date_updated":"2023-04-05T13:41:32Z","doi":"10.1103/PhysRevB.53.13688","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.53.13688"}],"publication_status":"published","page":"13688-13693","intvolume":"        53","citation":{"ama":"Meier T, von Plessen G, Koch M, et al. Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice. <i>Physical Review-Section B-Condensed Matter</i>. 1996;53(20):13688-13693. doi:<a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">10.1103/PhysRevB.53.13688</a>","chicago":"Meier, Torsten, G. von Plessen, M. Koch, J. Feldmann, P. Thomas, S.W. Koch, E.O. Göbel,  K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Exciton Ionization Induced by an Electric Field in a Strongly Coupled GaAs/AlxGa1-XAs Superlattice.” <i>Physical Review-Section B-Condensed Matter</i> 53, no. 20 (1996): 13688–93. <a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">https://doi.org/10.1103/PhysRevB.53.13688</a>.","ieee":"T. Meier <i>et al.</i>, “Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice,” <i>Physical Review-Section B-Condensed Matter</i>, vol. 53, no. 20, pp. 13688–13693, 1996, doi: <a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">10.1103/PhysRevB.53.13688</a>.","mla":"Meier, Torsten, et al. “Exciton Ionization Induced by an Electric Field in a Strongly Coupled GaAs/AlxGa1-XAs Superlattice.” <i>Physical Review-Section B-Condensed Matter</i>, vol. 53, no. 20, 1996, pp. 13688–93, doi:<a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">10.1103/PhysRevB.53.13688</a>.","bibtex":"@article{Meier_von Plessen_Koch_Feldmann_Thomas_Koch_Göbel_Goosen_Kuo_Kopf_1996, title={Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice}, volume={53}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">10.1103/PhysRevB.53.13688</a>}, number={20}, journal={Physical Review-Section B-Condensed Matter}, author={Meier, Torsten and von Plessen, G. and Koch, M. and Feldmann, J. and Thomas, P. and Koch, S.W. and Göbel, E.O. and Goosen,  K.W. and Kuo, J.M. and Kopf, R.F.}, year={1996}, pages={13688–13693} }","short":"T. Meier, G. von Plessen, M. Koch, J. Feldmann, P. Thomas, S.W. Koch, E.O. Göbel,  K.W. Goosen, J.M. Kuo, R.F. Kopf, Physical Review-Section B-Condensed Matter 53 (1996) 13688–13693.","apa":"Meier, T., von Plessen, G., Koch, M., Feldmann, J., Thomas, P., Koch, S. W., Göbel, E. O., Goosen,  K.W., Kuo, J. M., &#38; Kopf, R. F. (1996). Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice. <i>Physical Review-Section B-Condensed Matter</i>, <i>53</i>(20), 13688–13693. <a href=\"https://doi.org/10.1103/PhysRevB.53.13688\">https://doi.org/10.1103/PhysRevB.53.13688</a>"},"department":[{"_id":"293"}],"user_id":"49063","_id":"43410","extern":"1","type":"journal_article","status":"public","date_created":"2023-04-05T13:41:29Z","title":"Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxGa1-xAs superlattice","issue":"20","year":"1996","language":[{"iso":"eng"}],"publication":"Physical Review-Section B-Condensed Matter","abstract":[{"text":"We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to decrease with increasing field, and lie in the picosecond and subpicosecond ranges for fields on the order of a few kV/cm. They are considerably longer than those calculated for a 1s exciton in bulk GaAs. We explain this difference as a result of the nonparabolicities in the superlattice miniband dispersion. In addition to studying the field-induced ionization of the 1s resonance, we also investigate the field dependence of excitonic wave packets composed of both bound and continuum states of the exciton. It is found that the continuum components of the wave packet are more sensitive to low electric fields than the 1s component. © 1996 The American Physical Society.","lang":"eng"}]},{"extern":"1","user_id":"49063","department":[{"_id":"293"}],"_id":"43416","status":"public","type":"journal_article","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.4436"}],"doi":"10.1103/PhysRevB.54.4436","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"T.F.","full_name":"Albrecht, T.F.","last_name":"Albrecht"},{"first_name":"K.","full_name":"Bott, K.","last_name":"Bott"},{"first_name":"A.","full_name":"Schulze, A.","last_name":"Schulze"},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"last_name":"Cundiff","full_name":"Cundiff, S.T.","first_name":"S.T."},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"first_name":"W.","last_name":"Stolz","full_name":"Stolz, W."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"E.O.","full_name":"Göbel, E.O.","last_name":"Göbel"}],"volume":54,"date_updated":"2023-04-05T13:48:48Z","citation":{"apa":"Meier, T., Albrecht, T. F., Bott, K., Schulze, A., Koch, M., Cundiff, S. T., Feldmann, J., Stolz, W., Thomas, P., Koch, S. W., &#38; Göbel, E. O. (1996). Disorder mediated biexcitonic beats in semiconductor quantum wells. <i>Physical Review B</i>, <i>54</i>(7), 4436–4439. <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">https://doi.org/10.1103/PhysRevB.54.4436</a>","short":"T. Meier, T.F. Albrecht, K. Bott, A. Schulze, M. Koch, S.T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S.W. Koch, E.O. Göbel, Physical Review B 54 (1996) 4436–4439.","bibtex":"@article{Meier_Albrecht_Bott_Schulze_Koch_Cundiff_Feldmann_Stolz_Thomas_Koch_et al._1996, title={Disorder mediated biexcitonic beats in semiconductor quantum wells}, volume={54}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>}, number={7}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Albrecht, T.F. and Bott, K. and Schulze, A. and Koch, M. and Cundiff, S.T. and Feldmann, J. and Stolz, W. and Thomas, P. and Koch, S.W. and et al.}, year={1996}, pages={4436–4439} }","mla":"Meier, Torsten, et al. “Disorder Mediated Biexcitonic Beats in Semiconductor Quantum Wells.” <i>Physical Review B</i>, vol. 54, no. 7, American Physical Society, 1996, pp. 4436–39, doi:<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>.","chicago":"Meier, Torsten, T.F. Albrecht, K. Bott, A. Schulze, M. Koch, S.T. Cundiff, J. Feldmann, et al. “Disorder Mediated Biexcitonic Beats in Semiconductor Quantum Wells.” <i>Physical Review B</i> 54, no. 7 (1996): 4436–39. <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">https://doi.org/10.1103/PhysRevB.54.4436</a>.","ieee":"T. Meier <i>et al.</i>, “Disorder mediated biexcitonic beats in semiconductor quantum wells,” <i>Physical Review B</i>, vol. 54, no. 7, pp. 4436–4439, 1996, doi: <a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>.","ama":"Meier T, Albrecht TF, Bott K, et al. Disorder mediated biexcitonic beats in semiconductor quantum wells. <i>Physical Review B</i>. 1996;54(7):4436-4439. doi:<a href=\"https://doi.org/10.1103/PhysRevB.54.4436\">10.1103/PhysRevB.54.4436</a>"},"page":"4436-4439","intvolume":"        54","publication_status":"published","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Beats in the transient four-wave-mixing signal from strongly inhomogeneously broadened semiconductor quantum wells are observed. Based on their phase and polarization properties, the beats are assigned to biexcitons in the mesoscopically disordered material. With increasing excitation intensity a halving of the beat period is observed and is accurately reproduced by calculations including fifth-order contributions."}],"publication":"Physical Review B","title":"Disorder mediated biexcitonic beats in semiconductor quantum wells","date_created":"2023-04-05T13:48:46Z","publisher":"American Physical Society","year":"1996","issue":"7"},{"main_file_link":[{"url":"https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.77.3471"}],"doi":"10.1103/PhysRevLett.77.3471","date_updated":"2023-04-05T13:51:47Z","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"full_name":"Mukamel, S.","last_name":"Mukamel","first_name":"S."}],"volume":77,"citation":{"apa":"Meier, T., &#38; Mukamel, S. (1996). Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures. <i>Physical Review Letters</i>, <i>77</i>(16), 3471–3474. <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">https://doi.org/10.1103/PhysRevLett.77.3471</a>","mla":"Meier, Torsten, and S. Mukamel. “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures.” <i>Physical Review Letters</i>, vol. 77, no. 16, American Physical Society, 1996, pp. 3471–74, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>.","bibtex":"@article{Meier_Mukamel_1996, title={Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures}, volume={77}, DOI={<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>}, number={16}, journal={Physical review letters}, publisher={American Physical Society}, author={Meier, Torsten and Mukamel, S.}, year={1996}, pages={3471–3474} }","short":"T. Meier, S. Mukamel, Physical Review Letters 77 (1996) 3471–3474.","ieee":"T. Meier and S. Mukamel, “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures,” <i>Physical review letters</i>, vol. 77, no. 16, pp. 3471–3474, 1996, doi: <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>.","chicago":"Meier, Torsten, and S. Mukamel. “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures.” <i>Physical Review Letters</i> 77, no. 16 (1996): 3471–74. <a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">https://doi.org/10.1103/PhysRevLett.77.3471</a>.","ama":"Meier T, Mukamel S. Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures. <i>Physical review letters</i>. 1996;77(16):3471-3474. doi:<a href=\"https://doi.org/10.1103/PhysRevLett.77.3471\">10.1103/PhysRevLett.77.3471</a>"},"intvolume":"        77","page":"3471-3474","publication_status":"published","extern":"1","_id":"43419","user_id":"49063","department":[{"_id":"293"}],"status":"public","type":"journal_article","title":"Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures","publisher":"American Physical Society","date_created":"2023-04-05T13:51:41Z","year":"1996","issue":"16","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Electronic correlation effects which can be directly probed by ultrafast four-wave mixing are predicted using the electronic-oscillator representation of conjugated polyenes. Comparison with inorganic semiconductors is made possible since the semiconductor Bloch equations projected onto the lowest exciton are obtained as a limiting case. A sign difference in a nonlinear scattering potential clearly shows up in the Wigner spectrogram representing the time and frequency resolved signal."}],"publication":"Physical review letters"},{"title":"Field-induced exciton ionization studied by four-wave mixing","date_created":"2023-04-14T22:37:36Z","publisher":"Plenum Press","year":"1996","language":[{"iso":"eng"}],"abstract":[{"text":"The dynamics of carriers induced by electric fields in semiconductor superlattices has received much interest in recent years. Phenomena like Bloch oscillations and negative differential velocity in these structures have been studied using a variety of experimental techniques [1–5]. One particular point of interest has been the transition of the miniband regime to the Bloch oscillation regime with increasing electric field [6,7]. Cw spectra of strongly-coupled superlattices have evidenced that this transition is concomitant with a rapid field-induced ionization of the zero-field miniband exciton [5,8]. While it has been pointed out from the theoretical side that the field-induced ionization process strongly influences the coherent dynamics in the transition region [9], no systematic experimental investigation of the ionization process has been carried out so far. One interesting question that such an investigation could help to answer is to what extent this ionization process differs from the well-documented case of field-induced exciton ionization in bulk semiconductors.","lang":"eng"}],"publication":"Hot Carriers in Semiconductors","main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4613-0401-2_1"}],"conference":{"name":"Proceedings of 9th Conference on Hot Carriers, 1995","location":"Chicago"},"doi":"10.1007/978-1-4613-0401-2_1","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"M.","last_name":"Koch","full_name":"Koch, M."},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"first_name":"J.","full_name":"Feldmann, J.","last_name":"Feldmann"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"last_name":"Göbel","full_name":"Göbel, E.O.","first_name":"E.O."},{"first_name":"K.W.","last_name":"Goosen","full_name":"Goosen, K.W."},{"last_name":"Kuo","full_name":"Kuo, J.M.","first_name":"J.M."},{"first_name":"R.F.","full_name":"Kopf, R.F.","last_name":"Kopf"}],"date_updated":"2023-04-14T22:37:38Z","citation":{"chicago":"Meier, Torsten, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” In <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, 3–6. New York: Plenum Press, 1996. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">https://doi.org/10.1007/978-1-4613-0401-2_1</a>.","ieee":"T. Meier <i>et al.</i>, “Field-induced exciton ionization studied by four-wave mixing,” in <i>Hot Carriers in Semiconductors</i>, K. Hess, Ed. New York: Plenum Press, 1996, pp. 3–6.","ama":"Meier T, Koch M, von Plessen G, et al. Field-induced exciton ionization studied by four-wave mixing. In: Hess K, ed. <i>Hot Carriers in Semiconductors</i>. Plenum Press; 1996:3-6. doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>","apa":"Meier, T., Koch, M., von Plessen, G., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., &#38; Kopf, R. F. (1996). Field-induced exciton ionization studied by four-wave mixing. In K. Hess (Ed.), <i>Hot Carriers in Semiconductors</i> (pp. 3–6). Plenum Press. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">https://doi.org/10.1007/978-1-4613-0401-2_1</a>","short":"T. Meier, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 3–6.","bibtex":"@inbook{Meier_Koch_von Plessen_Feldmann_Koch_Thomas_Göbel_Goosen_Kuo_Kopf_1996, place={New York}, title={Field-induced exciton ionization studied by four-wave mixing}, DOI={<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>}, booktitle={Hot Carriers in Semiconductors}, publisher={Plenum Press}, author={Meier, Torsten and Koch, M. and von Plessen, G. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, editor={Hess, K.}, year={1996}, pages={3–6} }","mla":"Meier, Torsten, et al. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, Plenum Press, 1996, pp. 3–6, doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_1\">10.1007/978-1-4613-0401-2_1</a>."},"page":"3-6","place":"New York","publication_status":"published","publication_identifier":{"isbn":["10.1007/978-1-4613-0401-2_1"]},"extern":"1","user_id":"49063","department":[{"_id":"293"}],"_id":"43565","status":"public","editor":[{"first_name":"K.","last_name":"Hess","full_name":"Hess, K."}],"type":"book_chapter"},{"main_file_link":[{"url":"https://books.google.de/books?hl=en&lr=&id=lwjmIoBG1cAC&oi=fnd&pg=PA459&dq=info:LCTh7dWMlyoJ:scholar.google.com&ots=jQfJaz3jAn&sig=Hro0qMz7WEzGjkn-taqzbVTu0Zs&redir_esc=y#v=onepage&q&f=false"}],"conference":{"name":"Proceedings of NATO-ASI","start_date":"1995-08-16","end_date":"1995-08-26","location":"Kiev"},"date_updated":"2023-05-01T11:00:32Z","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"first_name":"J.","full_name":"Hader, J.","last_name":"Hader"},{"first_name":"K.-C","last_name":"Je","full_name":"Je, K.-C"},{"full_name":"Rossi, F.","last_name":"Rossi","first_name":"F."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"}],"volume":328,"place":"Dordrecht","citation":{"ama":"Meier T, Koch SW, Hader J, Je K-C, Rossi F, Thomas P. Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures. In: Jauho A-P, Buzeaneva EV, eds. <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>. Vol 328. NATO ASI Series E: Applied Sciences. Kluver Publ.; 1996:459-478.","chicago":"Meier, Torsten, S.W. Koch, J. Hader, K.-C Je, F. Rossi, and P. Thomas. “Equilibrium and Nonequilibrium Optical Effetcs in Semiconductor Heterostructures.” In <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, edited by A.-P. Jauho and E.V. Buzeaneva, 328:459–78. NATO ASI Series E: Applied Sciences. Dordrecht: Kluver Publ., 1996.","ieee":"T. Meier, S. W. Koch, J. Hader, K.-C. Je, F. Rossi, and P. Thomas, “Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures,” in <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, vol. 328, A.-P. Jauho and E. V. Buzeaneva, Eds. Dordrecht: Kluver Publ., 1996, pp. 459–478.","apa":"Meier, T., Koch, S. W., Hader, J., Je, K.-C., Rossi, F., &#38; Thomas, P. (1996). Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures. In A.-P. Jauho &#38; E. V. Buzeaneva (Eds.), <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i> (Vol. 328, pp. 459–478). Kluver Publ.","mla":"Meier, Torsten, et al. “Equilibrium and Nonequilibrium Optical Effetcs in Semiconductor Heterostructures.” <i>Frontiers in Nanoscale Science of Micro/Submicro Devices</i>, edited by A.-P. Jauho and E.V. Buzeaneva, vol. 328, Kluver Publ., 1996, pp. 459–78.","short":"T. Meier, S.W. Koch, J. Hader, K.-C. Je, F. Rossi, P. Thomas, in: A.-P. Jauho, E.V. 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In particular, the energy relaxation of photoexcited carriers has been widely investigated. At the same time, recent progress in the fabrication and characterization of semiconductor heterostructures and superlattices allows a detailed study of a new class of phenomena induced by an applied electric field, such as Bloch oscillations1,2. Both classes of phenomena typically occur on a pico- or femtosecond time-scale, where the coupling between coherent and incoherent phenomena is known to play a dominant role3. 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New York: Plenum Press, 1996. <a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">https://doi.org/10.1007/978-1-4613-0401-2_37</a>.","mla":"Meier, Torsten, et al. “Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: A Monte Carlo Investigation.” <i>Hot Carriers in Semiconductors</i>, edited by K. Hess, Plenum Press, 1996, pp. 157–60, doi:<a href=\"https://doi.org/10.1007/978-1-4613-0401-2_37\">10.1007/978-1-4613-0401-2_37</a>.","short":"T. Meier, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann , E. Molinari, in: K. 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Annihilation of delocalized positrons: a comparison of diamond and silicon. <i>Physics Letters A</i>, <i>222</i>(4), 275–280. <a href=\"https://doi.org/10.1016/0375-9601(96)00653-6\">https://doi.org/10.1016/0375-9601(96)00653-6</a>","short":"W.G. Schmidt, W.S. Verwoerd, Physics Letters A 222 (1996) 275–280.","bibtex":"@article{Schmidt_Verwoerd_1996, title={Annihilation of delocalized positrons: a comparison of diamond and silicon}, volume={222}, DOI={<a href=\"https://doi.org/10.1016/0375-9601(96)00653-6\">10.1016/0375-9601(96)00653-6</a>}, number={4}, journal={Physics Letters A}, author={Schmidt, Wolf Gero and Verwoerd, W.S}, year={1996}, pages={275–280} }","mla":"Schmidt, Wolf Gero, and W. S. 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Se-induced 3d core-level shifts of GaAs(110). <i>Applied Surface Science</i>, <i>104–105</i>, 141–146. <a href=\"https://doi.org/10.1016/s0169-4332(96)00135-3\">https://doi.org/10.1016/s0169-4332(96)00135-3</a>","bibtex":"@article{Käckell_Schmidt_Bechstedt_1996, title={Se-induced 3d core-level shifts of GaAs(110)}, volume={104–105}, DOI={<a href=\"https://doi.org/10.1016/s0169-4332(96)00135-3\">10.1016/s0169-4332(96)00135-3</a>}, journal={Applied Surface Science}, author={Käckell, Peter and Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1996}, pages={141–146} }","mla":"Käckell, Peter, et al. “Se-Induced 3d Core-Level Shifts of GaAs(110).” <i>Applied Surface Science</i>, vol. 104–105, 1996, pp. 141–46, doi:<a href=\"https://doi.org/10.1016/s0169-4332(96)00135-3\">10.1016/s0169-4332(96)00135-3</a>.","short":"P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146."},"year":"1996","publication_identifier":{"issn":["0169-4332"]},"publication_status":"published"},{"publication":"Surface Science Reports","type":"journal_article","status":"public","_id":"13787","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","funded_apc":"1","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0167-5729"]},"publication_status":"published","year":"1996","intvolume":"        25","page":"141-223","citation":{"bibtex":"@article{Schmidt_1996, title={Adsorption of group-V elements on III–V (1 1 0) surfaces}, volume={25}, DOI={<a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">10.1016/s0167-5729(96)00006-4</a>}, journal={Surface Science Reports}, author={Schmidt, Wolf Gero}, year={1996}, pages={141–223} }","short":"W.G. Schmidt, Surface Science Reports 25 (1996) 141–223.","mla":"Schmidt, Wolf Gero. “Adsorption of Group-V Elements on III–V (1 1 0) Surfaces.” <i>Surface Science Reports</i>, vol. 25, 1996, pp. 141–223, doi:<a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">10.1016/s0167-5729(96)00006-4</a>.","apa":"Schmidt, W. G. (1996). Adsorption of group-V elements on III–V (1 1 0) surfaces. <i>Surface Science Reports</i>, <i>25</i>, 141–223. <a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">https://doi.org/10.1016/s0167-5729(96)00006-4</a>","ama":"Schmidt WG. Adsorption of group-V elements on III–V (1 1 0) surfaces. <i>Surface Science Reports</i>. 1996;25:141-223. doi:<a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">10.1016/s0167-5729(96)00006-4</a>","ieee":"W. G. Schmidt, “Adsorption of group-V elements on III–V (1 1 0) surfaces,” <i>Surface Science Reports</i>, vol. 25, pp. 141–223, 1996, doi: <a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">10.1016/s0167-5729(96)00006-4</a>.","chicago":"Schmidt, Wolf Gero. “Adsorption of Group-V Elements on III–V (1 1 0) Surfaces.” <i>Surface Science Reports</i> 25 (1996): 141–223. <a href=\"https://doi.org/10.1016/s0167-5729(96)00006-4\">https://doi.org/10.1016/s0167-5729(96)00006-4</a>."},"date_updated":"2025-12-16T07:30:58Z","volume":25,"date_created":"2019-10-10T15:57:51Z","author":[{"full_name":"Schmidt, Wolf Gero","id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"}],"title":"Adsorption of group-V elements on III–V (1 1 0) surfaces","doi":"10.1016/s0167-5729(96)00006-4"},{"publication":"Thin Solid Films","type":"journal_article","status":"public","_id":"13791","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","language":[{"iso":"eng"}],"funded_apc":"1","publication_identifier":{"issn":["0040-6090"]},"publication_status":"published","year":"1996","page":"256-259","citation":{"apa":"Scholze, A., Schmidt, W. G., &#38; Bechstedt, F. (1996). Diamond (111) and (100) surface reconstructions. <i>Thin Solid Films</i>, <i>281–282</i>, 256–259. <a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">https://doi.org/10.1016/0040-6090(96)08646-4</a>","short":"A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.","bibtex":"@article{Scholze_Schmidt_Bechstedt_1996, title={Diamond (111) and (100) surface reconstructions}, volume={281–282}, DOI={<a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">10.1016/0040-6090(96)08646-4</a>}, journal={Thin Solid Films}, author={Scholze, A. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1996}, pages={256–259} }","mla":"Scholze, A., et al. “Diamond (111) and (100) Surface Reconstructions.” <i>Thin Solid Films</i>, vol. 281–282, 1996, pp. 256–59, doi:<a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">10.1016/0040-6090(96)08646-4</a>.","ama":"Scholze A, Schmidt WG, Bechstedt F. Diamond (111) and (100) surface reconstructions. <i>Thin Solid Films</i>. 1996;281-282:256-259. doi:<a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">10.1016/0040-6090(96)08646-4</a>","ieee":"A. Scholze, W. G. Schmidt, and F. Bechstedt, “Diamond (111) and (100) surface reconstructions,” <i>Thin Solid Films</i>, vol. 281–282, pp. 256–259, 1996, doi: <a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">10.1016/0040-6090(96)08646-4</a>.","chicago":"Scholze, A., Wolf Gero Schmidt, and F. Bechstedt. “Diamond (111) and (100) Surface Reconstructions.” <i>Thin Solid Films</i> 281–282 (1996): 256–59. <a href=\"https://doi.org/10.1016/0040-6090(96)08646-4\">https://doi.org/10.1016/0040-6090(96)08646-4</a>."},"date_updated":"2025-12-16T07:29:22Z","volume":"281-282","author":[{"full_name":"Scholze, A.","last_name":"Scholze","first_name":"A."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"date_created":"2019-10-10T16:10:25Z","title":"Diamond (111) and (100) surface reconstructions","doi":"10.1016/0040-6090(96)08646-4"}]