--- _id: '8746' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Meier, C. last_name: Meier - first_name: M. A. Serrano full_name: Álvarez, M. A. Serrano last_name: Álvarez - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2002:377-379. doi:10.1063/1.1386618 apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters, 377–379. https://doi.org/10.1063/1.1386618 bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}, DOI={10.1063/1.1386618}, journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano and Wieck, A. D.}, year={2002}, pages={377–379} }' chicago: Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, 377–79. https://doi.org/10.1063/1.1386618. ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,” Applied Physics Letters, pp. 377–379, 2002. mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, pp. 377–79, doi:10.1063/1.1386618. short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002) 377–379. date_created: 2019-03-29T11:23:32Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1386618 language: - iso: eng page: 377-379 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices type: journal_article user_id: '42514' year: '2002' ... --- _id: '8747' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-03-29T11:24:11Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ... --- _id: '8763' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: M. full_name: Versen, M. last_name: Versen - first_name: M. D. full_name: Schneider, M. D. last_name: Schneider - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660 apa: Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660 bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={10.1063/1.373660}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }' chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660. ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” Journal of Applied Physics, pp. 321–325, 2002. mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660. short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325. date_created: 2019-04-01T07:33:21Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.373660 language: - iso: eng page: 321-325 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities type: journal_article user_id: '42514' year: '2002' ... --- _id: '8768' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-04-01T07:56:38Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ... --- _id: '8771' author: - first_name: M. E. full_name: Gershenson, M. E. last_name: Gershenson - first_name: Yu. B. full_name: Khavin, Yu. B. last_name: Khavin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: P. full_name: Schafmeister, P. last_name: Schafmeister - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Gershenson ME, Khavin YB, Reuter D, Schafmeister P, Wieck AD. Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. Physical Review Letters. 2002:1718-1721. doi:10.1103/physrevlett.85.1718 apa: Gershenson, M. E., Khavin, Y. B., Reuter, D., Schafmeister, P., & Wieck, A. D. (2002). Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. Physical Review Letters, 1718–1721. https://doi.org/10.1103/physrevlett.85.1718 bibtex: '@article{Gershenson_Khavin_Reuter_Schafmeister_Wieck_2002, title={Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length}, DOI={10.1103/physrevlett.85.1718}, journal={Physical Review Letters}, author={Gershenson, M. E. and Khavin, Yu. B. and Reuter, Dirk and Schafmeister, P. and Wieck, A. D.}, year={2002}, pages={1718–1721} }' chicago: Gershenson, M. E., Yu. B. Khavin, Dirk Reuter, P. Schafmeister, and A. D. Wieck. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” Physical Review Letters, 2002, 1718–21. https://doi.org/10.1103/physrevlett.85.1718. ieee: M. E. Gershenson, Y. B. Khavin, D. Reuter, P. Schafmeister, and A. D. Wieck, “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length,” Physical Review Letters, pp. 1718–1721, 2002. mla: Gershenson, M. E., et al. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” Physical Review Letters, 2002, pp. 1718–21, doi:10.1103/physrevlett.85.1718. short: M.E. Gershenson, Y.B. Khavin, D. Reuter, P. Schafmeister, A.D. Wieck, Physical Review Letters (2002) 1718–1721. date_created: 2019-04-01T08:07:13Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1103/physrevlett.85.1718 language: - iso: eng page: 1718-1721 publication: Physical Review Letters publication_identifier: issn: - 0031-9007 - 1079-7114 publication_status: published status: public title: Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length type: journal_article user_id: '42514' year: '2002' ... --- _id: '8772' author: - first_name: M full_name: Versen, M last_name: Versen - first_name: B full_name: Klehn, B last_name: Klehn - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A.D full_name: Wieck, A.D last_name: Wieck citation: ama: Versen M, Klehn B, Kunze U, Reuter D, Wieck A. Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. Ultramicroscopy. 2002:159-163. doi:10.1016/s0304-3991(99)00127-8 apa: Versen, M., Klehn, B., Kunze, U., Reuter, D., & Wieck, A. . (2002). Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. Ultramicroscopy, 159–163. https://doi.org/10.1016/s0304-3991(99)00127-8 bibtex: '@article{Versen_Klehn_Kunze_Reuter_Wieck_2002, title={Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope}, DOI={10.1016/s0304-3991(99)00127-8}, journal={Ultramicroscopy}, author={Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={159–163} }' chicago: Versen, M, B Klehn, U Kunze, Dirk Reuter, and A.D Wieck. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” Ultramicroscopy, 2002, 159–63. https://doi.org/10.1016/s0304-3991(99)00127-8. ieee: M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. . Wieck, “Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope,” Ultramicroscopy, pp. 159–163, 2002. mla: Versen, M., et al. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” Ultramicroscopy, 2002, pp. 159–63, doi:10.1016/s0304-3991(99)00127-8. short: M. Versen, B. Klehn, U. Kunze, D. Reuter, A.. Wieck, Ultramicroscopy (2002) 159–163. date_created: 2019-04-01T08:09:48Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0304-3991(99)00127-8 language: - iso: eng page: 159-163 publication: Ultramicroscopy publication_identifier: issn: - 0304-3991 publication_status: published status: public title: Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope type: journal_article user_id: '42514' year: '2002' ... --- _id: '8773' author: - first_name: S full_name: Skaberna, S last_name: Skaberna - first_name: M full_name: Versen, M last_name: Versen - first_name: B full_name: Klehn, B last_name: Klehn - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A full_name: D. Wieck, A last_name: D. Wieck citation: ama: Skaberna S, Versen M, Klehn B, Kunze U, Reuter D, D. Wieck A. Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. Ultramicroscopy. 2002:153-157. doi:10.1016/s0304-3991(99)00126-6 apa: Skaberna, S., Versen, M., Klehn, B., Kunze, U., Reuter, D., & D. Wieck, A. (2002). Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. Ultramicroscopy, 153–157. https://doi.org/10.1016/s0304-3991(99)00126-6 bibtex: '@article{Skaberna_Versen_Klehn_Kunze_Reuter_D. Wieck_2002, title={Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching}, DOI={10.1016/s0304-3991(99)00126-6}, journal={Ultramicroscopy}, author={Skaberna, S and Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and D. Wieck, A}, year={2002}, pages={153–157} }' chicago: Skaberna, S, M Versen, B Klehn, U Kunze, Dirk Reuter, and A D. Wieck. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” Ultramicroscopy, 2002, 153–57. https://doi.org/10.1016/s0304-3991(99)00126-6. ieee: S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. D. Wieck, “Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching,” Ultramicroscopy, pp. 153–157, 2002. mla: Skaberna, S., et al. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” Ultramicroscopy, 2002, pp. 153–57, doi:10.1016/s0304-3991(99)00126-6. short: S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, A. D. Wieck, Ultramicroscopy (2002) 153–157. date_created: 2019-04-01T08:12:28Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0304-3991(99)00126-6 language: - iso: eng page: 153-157 publication: Ultramicroscopy publication_identifier: issn: - 0304-3991 publication_status: published status: public title: Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching type: journal_article user_id: '42514' year: '2002' ... --- _id: '8774' author: - first_name: K.H full_name: Schmidt, K.H last_name: Schmidt - first_name: M full_name: Versen, M last_name: Versen - first_name: C full_name: Bock, C last_name: Bock - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A.D full_name: Wieck, A.D last_name: Wieck citation: ama: 'Schmidt K., Versen M, Bock C, Kunze U, Reuter D, Wieck A. In-plane and perpendicular tunneling through InAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures. 2002:425-429. doi:10.1016/s1386-9477(99)00354-9' apa: 'Schmidt, K. ., Versen, M., Bock, C., Kunze, U., Reuter, D., & Wieck, A. . (2002). In-plane and perpendicular tunneling through InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures, 425–429. https://doi.org/10.1016/s1386-9477(99)00354-9' bibtex: '@article{Schmidt_Versen_Bock_Kunze_Reuter_Wieck_2002, title={In-plane and perpendicular tunneling through InAs quantum dots}, DOI={10.1016/s1386-9477(99)00354-9}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt, K.H and Versen, M and Bock, C and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={425–429} }' chicago: 'Schmidt, K.H, M Versen, C Bock, U Kunze, Dirk Reuter, and A.D Wieck. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, 2002, 425–29. https://doi.org/10.1016/s1386-9477(99)00354-9.' ieee: 'K. . Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, and A. . Wieck, “In-plane and perpendicular tunneling through InAs quantum dots,” Physica E: Low-dimensional Systems and Nanostructures, pp. 425–429, 2002.' mla: 'Schmidt, K. .., et al. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, 2002, pp. 425–29, doi:10.1016/s1386-9477(99)00354-9.' short: 'K.. Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 425–429.' date_created: 2019-04-01T08:13:43Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s1386-9477(99)00354-9 language: - iso: eng page: 425-429 publication: 'Physica E: Low-dimensional Systems and Nanostructures' publication_identifier: issn: - 1386-9477 publication_status: published status: public title: In-plane and perpendicular tunneling through InAs quantum dots type: journal_article user_id: '42514' year: '2002' ... --- _id: '8776' author: - first_name: K. H. full_name: Schmidt, K. H. last_name: Schmidt - first_name: M. full_name: Versen, M. last_name: Versen - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Schmidt KH, Versen M, Kunze U, Reuter D, Wieck AD. Electron transport through a single InAs quantum dot. Physical Review B. 2002:15879-15887. doi:10.1103/physrevb.62.15879 apa: Schmidt, K. H., Versen, M., Kunze, U., Reuter, D., & Wieck, A. D. (2002). Electron transport through a single InAs quantum dot. Physical Review B, 15879–15887. https://doi.org/10.1103/physrevb.62.15879 bibtex: '@article{Schmidt_Versen_Kunze_Reuter_Wieck_2002, title={Electron transport through a single InAs quantum dot}, DOI={10.1103/physrevb.62.15879}, journal={Physical Review B}, author={Schmidt, K. H. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={15879–15887} }' chicago: Schmidt, K. H., M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Electron Transport through a Single InAs Quantum Dot.” Physical Review B, 2002, 15879–87. https://doi.org/10.1103/physrevb.62.15879. ieee: K. H. Schmidt, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Electron transport through a single InAs quantum dot,” Physical Review B, pp. 15879–15887, 2002. mla: Schmidt, K. H., et al. “Electron Transport through a Single InAs Quantum Dot.” Physical Review B, 2002, pp. 15879–87, doi:10.1103/physrevb.62.15879. short: K.H. Schmidt, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Physical Review B (2002) 15879–15887. date_created: 2019-04-01T08:15:38Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1103/physrevb.62.15879 language: - iso: eng page: 15879-15887 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Electron transport through a single InAs quantum dot type: journal_article user_id: '42514' year: '2002' ... --- _id: '8778' author: - first_name: Christian full_name: Heidtkamp, Christian last_name: Heidtkamp - first_name: Sabine full_name: Lassen, Sabine last_name: Lassen - first_name: Marcus full_name: Schneider, Marcus last_name: Schneider - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Martin full_name: Versen, Martin last_name: Versen - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: 'Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. Physica B: Condensed Matter. 2002:1726-1727. doi:10.1016/s0921-4526(99)02890-2' apa: 'Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., & Wieck, A. D. (2002). Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. Physica B: Condensed Matter, 1726–1727. https://doi.org/10.1016/s0921-4526(99)02890-2' bibtex: '@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}, DOI={10.1016/s0921-4526(99)02890-2}, journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}, year={2002}, pages={1726–1727} }' chicago: 'Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” Physica B: Condensed Matter, 2002, 1726–27. https://doi.org/10.1016/s0921-4526(99)02890-2.' ieee: 'C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck, “Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems,” Physica B: Condensed Matter, pp. 1726–1727, 2002.' mla: 'Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” Physica B: Condensed Matter, 2002, pp. 1726–27, doi:10.1016/s0921-4526(99)02890-2.' short: 'C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, A.D. Wieck, Physica B: Condensed Matter (2002) 1726–1727.' date_created: 2019-04-01T08:18:28Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0921-4526(99)02890-2 language: - iso: eng page: 1726-1727 publication: 'Physica B: Condensed Matter' publication_identifier: issn: - 0921-4526 publication_status: published status: public title: Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems type: journal_article user_id: '42514' year: '2002' ... --- _id: '8779' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Fischer, A. last_name: Fischer citation: ama: Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. Review of Scientific Instruments. 2002:3435-3438. doi:10.1063/1.1149933 apa: Reuter, D., Wieck, A. D., & Fischer, A. (2002). A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. Review of Scientific Instruments, 3435–3438. https://doi.org/10.1063/1.1149933 bibtex: '@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy}, DOI={10.1063/1.1149933}, journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A. D. and Fischer, A.}, year={2002}, pages={3435–3438} }' chicago: Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” Review of Scientific Instruments, 2002, 3435–38. https://doi.org/10.1063/1.1149933. ieee: D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy,” Review of Scientific Instruments, pp. 3435–3438, 2002. mla: Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” Review of Scientific Instruments, 2002, pp. 3435–38, doi:10.1063/1.1149933. short: D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002) 3435–3438. date_created: 2019-04-01T08:27:04Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1149933 language: - iso: eng page: 3435-3438 publication: Review of Scientific Instruments publication_identifier: issn: - 0034-6748 - 1089-7623 publication_status: published status: public title: A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy type: journal_article user_id: '42514' year: '2002' ... --- _id: '8780' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Fischer, A. last_name: Fischer citation: ama: Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. Review of Scientific Instruments. 2002:3435-3438. doi:10.1063/1.1149933 apa: Reuter, D., Wieck, A. D., & Fischer, A. (2002). A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. Review of Scientific Instruments, 3435–3438. https://doi.org/10.1063/1.1149933 bibtex: '@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy}, DOI={10.1063/1.1149933}, journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A. D. and Fischer, A.}, year={2002}, pages={3435–3438} }' chicago: Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” Review of Scientific Instruments, 2002, 3435–38. https://doi.org/10.1063/1.1149933. ieee: D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy,” Review of Scientific Instruments, pp. 3435–3438, 2002. mla: Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” Review of Scientific Instruments, 2002, pp. 3435–38, doi:10.1063/1.1149933. short: D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002) 3435–3438. date_created: 2019-04-01T08:28:09Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1149933 language: - iso: eng page: 3435-3438 publication: Review of Scientific Instruments publication_identifier: issn: - 0034-6748 - 1089-7623 publication_status: published status: public title: A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy type: journal_article user_id: '42514' year: '2002' ... --- _id: '8783' author: - first_name: D full_name: Sander, D last_name: Sander - first_name: A full_name: Enders, A last_name: Enders - first_name: C full_name: Schmidthals, C last_name: Schmidthals - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: J full_name: Kirschner, J last_name: Kirschner citation: ama: Sander D, Enders A, Schmidthals C, Reuter D, Kirschner J. Mechanical stress and magnetism of ferromagnetic monolayers. Surface Science. 2002:351-355. doi:10.1016/s0039-6028(97)00922-9 apa: Sander, D., Enders, A., Schmidthals, C., Reuter, D., & Kirschner, J. (2002). Mechanical stress and magnetism of ferromagnetic monolayers. Surface Science, 351–355. https://doi.org/10.1016/s0039-6028(97)00922-9 bibtex: '@article{Sander_Enders_Schmidthals_Reuter_Kirschner_2002, title={Mechanical stress and magnetism of ferromagnetic monolayers}, DOI={10.1016/s0039-6028(97)00922-9}, journal={Surface Science}, author={Sander, D and Enders, A and Schmidthals, C and Reuter, Dirk and Kirschner, J}, year={2002}, pages={351–355} }' chicago: Sander, D, A Enders, C Schmidthals, Dirk Reuter, and J Kirschner. “Mechanical Stress and Magnetism of Ferromagnetic Monolayers.” Surface Science, 2002, 351–55. https://doi.org/10.1016/s0039-6028(97)00922-9. ieee: D. Sander, A. Enders, C. Schmidthals, D. Reuter, and J. Kirschner, “Mechanical stress and magnetism of ferromagnetic monolayers,” Surface Science, pp. 351–355, 2002. mla: Sander, D., et al. “Mechanical Stress and Magnetism of Ferromagnetic Monolayers.” Surface Science, 2002, pp. 351–55, doi:10.1016/s0039-6028(97)00922-9. short: D. Sander, A. Enders, C. Schmidthals, D. Reuter, J. Kirschner, Surface Science (2002) 351–355. date_created: 2019-04-01T08:32:43Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0039-6028(97)00922-9 language: - iso: eng page: 351-355 publication: Surface Science publication_identifier: issn: - 0039-6028 publication_status: published status: public title: Mechanical stress and magnetism of ferromagnetic monolayers type: journal_article user_id: '42514' year: '2002' ... --- _id: '8784' author: - first_name: D. full_name: Sander, D. last_name: Sander - first_name: A. full_name: Enders, A. last_name: Enders - first_name: C. full_name: Schmidthals, C. last_name: Schmidthals - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: J. full_name: Kirschner, J. last_name: Kirschner citation: ama: 'Sander D, Enders A, Schmidthals C, Reuter D, Kirschner J. Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation. Journal of Magnetism and Magnetic Materials. 2002:1299-1300. doi:10.1016/s0304-8853(97)00753-1' apa: 'Sander, D., Enders, A., Schmidthals, C., Reuter, D., & Kirschner, J. (2002). Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation. Journal of Magnetism and Magnetic Materials, 1299–1300. https://doi.org/10.1016/s0304-8853(97)00753-1' bibtex: '@article{Sander_Enders_Schmidthals_Reuter_Kirschner_2002, title={Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation}, DOI={10.1016/s0304-8853(97)00753-1}, journal={Journal of Magnetism and Magnetic Materials}, author={Sander, D. and Enders, A. and Schmidthals, C. and Reuter, Dirk and Kirschner, J.}, year={2002}, pages={1299–1300} }' chicago: 'Sander, D., A. Enders, C. Schmidthals, Dirk Reuter, and J. Kirschner. “Stranski-Krastanov Layers of Fe on W(1 1 0): A Combined MOKE, LEED, SAM and Stress Measurement Investigation.” Journal of Magnetism and Magnetic Materials, 2002, 1299–1300. https://doi.org/10.1016/s0304-8853(97)00753-1.' ieee: 'D. Sander, A. Enders, C. Schmidthals, D. Reuter, and J. Kirschner, “Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation,” Journal of Magnetism and Magnetic Materials, pp. 1299–1300, 2002.' mla: 'Sander, D., et al. “Stranski-Krastanov Layers of Fe on W(1 1 0): A Combined MOKE, LEED, SAM and Stress Measurement Investigation.” Journal of Magnetism and Magnetic Materials, 2002, pp. 1299–300, doi:10.1016/s0304-8853(97)00753-1.' short: D. Sander, A. Enders, C. Schmidthals, D. Reuter, J. Kirschner, Journal of Magnetism and Magnetic Materials (2002) 1299–1300. date_created: 2019-04-01T08:37:28Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0304-8853(97)00753-1 language: - iso: eng page: 1299-1300 publication: Journal of Magnetism and Magnetic Materials publication_identifier: issn: - 0304-8853 publication_status: published status: public title: 'Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation' type: journal_article user_id: '42514' year: '2002' ... --- _id: '8785' author: - first_name: D full_name: Sander, D last_name: Sander - first_name: R full_name: Skomski, R last_name: Skomski - first_name: A full_name: Enders, A last_name: Enders - first_name: C full_name: Schmidthals, C last_name: Schmidthals - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: J full_name: Kirschner, J last_name: Kirschner citation: ama: 'Sander D, Skomski R, Enders A, Schmidthals C, Reuter D, Kirschner J. The correlation between mechanical stress and magnetic properties of ultrathin films. Journal of Physics D: Applied Physics. 2002:663-670. doi:10.1088/0022-3727/31/6/014' apa: 'Sander, D., Skomski, R., Enders, A., Schmidthals, C., Reuter, D., & Kirschner, J. (2002). The correlation between mechanical stress and magnetic properties of ultrathin films. Journal of Physics D: Applied Physics, 663–670. https://doi.org/10.1088/0022-3727/31/6/014' bibtex: '@article{Sander_Skomski_Enders_Schmidthals_Reuter_Kirschner_2002, title={The correlation between mechanical stress and magnetic properties of ultrathin films}, DOI={10.1088/0022-3727/31/6/014}, journal={Journal of Physics D: Applied Physics}, author={Sander, D and Skomski, R and Enders, A and Schmidthals, C and Reuter, Dirk and Kirschner, J}, year={2002}, pages={663–670} }' chicago: 'Sander, D, R Skomski, A Enders, C Schmidthals, Dirk Reuter, and J Kirschner. “The Correlation between Mechanical Stress and Magnetic Properties of Ultrathin Films.” Journal of Physics D: Applied Physics, 2002, 663–70. https://doi.org/10.1088/0022-3727/31/6/014.' ieee: 'D. Sander, R. Skomski, A. Enders, C. Schmidthals, D. Reuter, and J. Kirschner, “The correlation between mechanical stress and magnetic properties of ultrathin films,” Journal of Physics D: Applied Physics, pp. 663–670, 2002.' mla: 'Sander, D., et al. “The Correlation between Mechanical Stress and Magnetic Properties of Ultrathin Films.” Journal of Physics D: Applied Physics, 2002, pp. 663–70, doi:10.1088/0022-3727/31/6/014.' short: 'D. Sander, R. Skomski, A. Enders, C. Schmidthals, D. Reuter, J. Kirschner, Journal of Physics D: Applied Physics (2002) 663–670.' date_created: 2019-04-01T08:38:47Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0022-3727/31/6/014 language: - iso: eng page: 663-670 publication: 'Journal of Physics D: Applied Physics' publication_identifier: issn: - 0022-3727 - 1361-6463 publication_status: published status: public title: The correlation between mechanical stress and magnetic properties of ultrathin films type: journal_article user_id: '42514' year: '2002' ... --- _id: '8786' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: G. full_name: Gerth, G. last_name: Gerth - first_name: J. full_name: Kirschner, J. last_name: Kirschner citation: ama: Reuter D, Gerth G, Kirschner J. Anisotropic diffusion of3dmetals on W(110): Competition between crystalline structure and surface steps. Physical Review B. 2002:2520-2529. doi:10.1103/physrevb.57.2520 apa: Reuter, D., Gerth, G., & Kirschner, J. (2002). Anisotropic diffusion of3dmetals on W(110): Competition between crystalline structure and surface steps. Physical Review B, 2520–2529. https://doi.org/10.1103/physrevb.57.2520 bibtex: '@article{Reuter_Gerth_Kirschner_2002, title={Anisotropic diffusion of3dmetals on W(110): Competition between crystalline structure and surface steps}, DOI={10.1103/physrevb.57.2520}, journal={Physical Review B}, author={Reuter, Dirk and Gerth, G. and Kirschner, J.}, year={2002}, pages={2520–2529} }' chicago: Reuter, Dirk, G. Gerth, and J. Kirschner. “Anisotropic Diffusion Of3dmetals on W(110): Competition between Crystalline Structure and Surface Steps.” Physical Review B, 2002, 2520–29. https://doi.org/10.1103/physrevb.57.2520. ieee: D. Reuter, G. Gerth, and J. Kirschner, “Anisotropic diffusion of3dmetals on W(110): Competition between crystalline structure and surface steps,” Physical Review B, pp. 2520–2529, 2002. mla: Reuter, Dirk, et al. “Anisotropic Diffusion Of3dmetals on W(110): Competition between Crystalline Structure and Surface Steps.” Physical Review B, 2002, pp. 2520–29, doi:10.1103/physrevb.57.2520. short: D. Reuter, G. Gerth, J. Kirschner, Physical Review B (2002) 2520–2529. date_created: 2019-04-01T08:41:39Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1103/physrevb.57.2520 language: - iso: eng page: 2520-2529 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Anisotropic diffusion of3dmetals on W(110): Competition between crystalline structure and surface steps type: journal_article user_id: '42514' year: '2002' ... --- _id: '8787' author: - first_name: A. full_name: Wiessner, A. last_name: Wiessner - first_name: M. full_name: Agne, M. last_name: Agne - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: J. full_name: Kirschner, J. last_name: Kirschner citation: ama: Wiessner A, Agne M, Reuter D, Kirschner J. Formation of copper crystallites on a Cu/Fe/Cu(100) sandwich. Surface Science. 2002:937-942. doi:10.1016/s0039-6028(96)01525-7 apa: Wiessner, A., Agne, M., Reuter, D., & Kirschner, J. (2002). Formation of copper crystallites on a Cu/Fe/Cu(100) sandwich. Surface Science, 937–942. https://doi.org/10.1016/s0039-6028(96)01525-7 bibtex: '@article{Wiessner_Agne_Reuter_Kirschner_2002, title={Formation of copper crystallites on a Cu/Fe/Cu(100) sandwich}, DOI={10.1016/s0039-6028(96)01525-7}, journal={Surface Science}, author={Wiessner, A. and Agne, M. and Reuter, Dirk and Kirschner, J.}, year={2002}, pages={937–942} }' chicago: Wiessner, A., M. Agne, Dirk Reuter, and J. Kirschner. “Formation of Copper Crystallites on a Cu/Fe/Cu(100) Sandwich.” Surface Science, 2002, 937–42. https://doi.org/10.1016/s0039-6028(96)01525-7. ieee: A. Wiessner, M. Agne, D. Reuter, and J. Kirschner, “Formation of copper crystallites on a Cu/Fe/Cu(100) sandwich,” Surface Science, pp. 937–942, 2002. mla: Wiessner, A., et al. “Formation of Copper Crystallites on a Cu/Fe/Cu(100) Sandwich.” Surface Science, 2002, pp. 937–42, doi:10.1016/s0039-6028(96)01525-7. short: A. Wiessner, M. Agne, D. Reuter, J. Kirschner, Surface Science (2002) 937–942. date_created: 2019-04-01T08:42:19Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1016/s0039-6028(96)01525-7 language: - iso: eng page: 937-942 publication: Surface Science publication_identifier: issn: - 0039-6028 publication_status: published status: public title: Formation of copper crystallites on a Cu/Fe/Cu(100) sandwich type: journal_article user_id: '42514' year: '2002' ... --- _id: '8788' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: G. full_name: Gerth, G. last_name: Gerth - first_name: J. full_name: Kirschner, J. last_name: Kirschner citation: ama: 'Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics. 2002:5374-5377. doi:10.1063/1.366304' apa: 'Reuter, D., Gerth, G., & Kirschner, J. (2002). Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics, 5374–5377. https://doi.org/10.1063/1.366304' bibtex: '@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies}, DOI={10.1063/1.366304}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner, J.}, year={2002}, pages={5374–5377} }' chicago: 'Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, 5374–77. https://doi.org/10.1063/1.366304.' ieee: 'D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies,” Journal of Applied Physics, pp. 5374–5377, 2002.' mla: 'Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, pp. 5374–77, doi:10.1063/1.366304.' short: D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377. date_created: 2019-04-01T08:43:12Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.366304 language: - iso: eng page: 5374-5377 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: 'Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies' type: journal_article user_id: '42514' year: '2002' ... --- _id: '35402' abstract: - lang: eng text: The production of defects in flow-aligning nematic liquid crystals under simple shear flow is analyzed by linear stability analysis based on Leslie-Ericksen theory. It is pointed out that the equation of motion of the nematic director under simple shear flow conforms to the driven over-damped sine-Gordon equation and has a soliton solution of amplitude pi. It has also been shown that the stationary state with the director uniformly oriented at a Leslie angle is only a metastable state and that the potential, which governs the motion of the director, has infinite numbers of stable stationary states. Therefore, the defects, appearing as a stable solitary solution, can be nucleated from a uniformly aligned flow-aligning type of nematic liquid crystal by shear flow. On the other hand, the bands with long axis parallel to the vorticity axis, appearing as an unstable-solution, can be observed as transient patterns at tow shear rate and low shear strain value, The theoretical predictions are compared with previous experimental observations. author: - first_name: Yuliang full_name: Yang, Yuliang last_name: Yang - first_name: K. F. full_name: Luo, K. F. last_name: Luo - first_name: Claudia full_name: Schmidt, Claudia id: '466' last_name: Schmidt orcid: 0000-0003-3179-9997 - first_name: Christine full_name: Peter, Christine last_name: Peter citation: ama: Yang Y, Luo KF, Schmidt C, Peter C. Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow. Progress in Natural Science. 2002;12:188-197. apa: Yang, Y., Luo, K. F., Schmidt, C., & Peter, C. (2002). Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow. Progress in Natural Science, 12, 188–197. bibtex: '@article{Yang_Luo_Schmidt_Peter_2002, title={Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow}, volume={12}, journal={Progress in Natural Science}, author={Yang, Yuliang and Luo, K. F. and Schmidt, Claudia and Peter, Christine}, year={2002}, pages={188–197} }' chicago: 'Yang, Yuliang, K. F. Luo, Claudia Schmidt, and Christine Peter. “Solitons and Production of Defects in Flow-Aligning Nematic Liquid Crystals under Simple Shear Flow.” Progress in Natural Science 12 (2002): 188–97.' ieee: Y. Yang, K. F. Luo, C. Schmidt, and C. Peter, “Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow,” Progress in Natural Science, vol. 12, pp. 188–197, 2002. mla: Yang, Yuliang, et al. “Solitons and Production of Defects in Flow-Aligning Nematic Liquid Crystals under Simple Shear Flow.” Progress in Natural Science, vol. 12, 2002, pp. 188–97. short: Y. Yang, K.F. Luo, C. Schmidt, C. Peter, Progress in Natural Science 12 (2002) 188–197. date_created: 2023-01-06T19:24:36Z date_updated: 2023-01-07T11:19:10Z department: - _id: '2' - _id: '315' extern: '1' external_id: isi: - '000174285200007' intvolume: ' 12' isi: '1' keyword: - nematic liquid crystalsdefectssolitons language: - iso: eng page: 188-197 publication: Progress in Natural Science publication_identifier: issn: - 1002-0071 status: public title: Solitons and production of defects in flow-aligning nematic liquid crystals under simple shear flow type: journal_article user_id: '466' volume: 12 year: '2002' ... --- _id: '35362' article_type: original author: - first_name: Michail full_name: Lukaschek, Michail last_name: Lukaschek - first_name: Gerd full_name: Kothe, Gerd last_name: Kothe - first_name: Claudia full_name: Schmidt, Claudia id: '466' last_name: Schmidt orcid: 0000-0003-3179-9997 - first_name: Alexandre E. full_name: Gomes, Alexandre E. last_name: Gomes - first_name: Antonino full_name: Polimeno, Antonino last_name: Polimeno citation: ama: Lukaschek M, Kothe G, Schmidt C, Gomes AE, Polimeno A. Evaluation of the viscoelastic properties of a nematic dimer by cone-and-plate rheo-nuclear magnetic resonance spectroscopy and comparison with Leslie–Ericksen theory. The Journal of Chemical Physics. 2002;117(9):4550-4556. doi:10.1063/1.1497161 apa: Lukaschek, M., Kothe, G., Schmidt, C., Gomes, A. E., & Polimeno, A. (2002). Evaluation of the viscoelastic properties of a nematic dimer by cone-and-plate rheo-nuclear magnetic resonance spectroscopy and comparison with Leslie–Ericksen theory. The Journal of Chemical Physics, 117(9), 4550–4556. https://doi.org/10.1063/1.1497161 bibtex: '@article{Lukaschek_Kothe_Schmidt_Gomes_Polimeno_2002, title={Evaluation of the viscoelastic properties of a nematic dimer by cone-and-plate rheo-nuclear magnetic resonance spectroscopy and comparison with Leslie–Ericksen theory}, volume={117}, DOI={10.1063/1.1497161}, number={9}, journal={The Journal of Chemical Physics}, publisher={AIP Publishing}, author={Lukaschek, Michail and Kothe, Gerd and Schmidt, Claudia and Gomes, Alexandre E. and Polimeno, Antonino}, year={2002}, pages={4550–4556} }' chicago: 'Lukaschek, Michail, Gerd Kothe, Claudia Schmidt, Alexandre E. Gomes, and Antonino Polimeno. “Evaluation of the Viscoelastic Properties of a Nematic Dimer by Cone-and-Plate Rheo-Nuclear Magnetic Resonance Spectroscopy and Comparison with Leslie–Ericksen Theory.” The Journal of Chemical Physics 117, no. 9 (2002): 4550–56. https://doi.org/10.1063/1.1497161.' ieee: 'M. Lukaschek, G. Kothe, C. Schmidt, A. E. Gomes, and A. Polimeno, “Evaluation of the viscoelastic properties of a nematic dimer by cone-and-plate rheo-nuclear magnetic resonance spectroscopy and comparison with Leslie–Ericksen theory,” The Journal of Chemical Physics, vol. 117, no. 9, pp. 4550–4556, 2002, doi: 10.1063/1.1497161.' mla: Lukaschek, Michail, et al. “Evaluation of the Viscoelastic Properties of a Nematic Dimer by Cone-and-Plate Rheo-Nuclear Magnetic Resonance Spectroscopy and Comparison with Leslie–Ericksen Theory.” The Journal of Chemical Physics, vol. 117, no. 9, AIP Publishing, 2002, pp. 4550–56, doi:10.1063/1.1497161. short: M. Lukaschek, G. Kothe, C. Schmidt, A.E. Gomes, A. Polimeno, The Journal of Chemical Physics 117 (2002) 4550–4556. date_created: 2023-01-06T13:15:56Z date_updated: 2023-01-07T11:21:13Z department: - _id: '2' - _id: '315' doi: 10.1063/1.1497161 extern: '1' intvolume: ' 117' issue: '9' keyword: - Physical and Theoretical Chemistry - General Physics and Astronomy language: - iso: eng page: 4550-4556 publication: The Journal of Chemical Physics publication_identifier: issn: - 0021-9606 - 1089-7690 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: Evaluation of the viscoelastic properties of a nematic dimer by cone-and-plate rheo-nuclear magnetic resonance spectroscopy and comparison with Leslie–Ericksen theory type: journal_article user_id: '466' volume: 117 year: '2002' ...