TY - JOUR AB - In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a time-dependent shift of the transition energy. This shift is measured accurately by resonant ps laser spectroscopy with photocurrent detection. In our experiments, we sample the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution. With our quantum dot sensor device, we were able to sample transients below 20 ps with a voltage resolution in the mV-range. AU - Widhalm, Alex AU - Krehs, Sebastian AU - Siebert, Dustin AU - Sharma, Nand Lal AU - Langer, Timo AU - Jonas, Björn AU - Reuter, Dirk AU - Thiede, Andreas AU - Förstner, Jens AU - Zrenner, Artur ID - 27099 JF - Applied Physics Letters KW - tet_topic_qd SN - 0003-6951 TI - Optoelectronic sampling of ultrafast electric transients with single quantum dots VL - 119 ER - TY - JOUR AU - Mukherjee, Amlan AU - Widhalm, Alex AU - Siebert, Dustin AU - Krehs, Sebastian AU - Sharma, Nandlal AU - Thiede, Andreas AU - Reuter, Dirk AU - Förstner, Jens AU - Zrenner, Artur ID - 17322 JF - Applied Physics Letters KW - tet_topic_qd SN - 0003-6951 TI - Electrically controlled rapid adiabatic passage in a single quantum dot VL - 116 ER - TY - GEN AU - Förstner, Jens AU - Widhalm, A. AU - Mukherjee, A. AU - Krehs, S. AU - Jonas, B. AU - Spychala, K. AU - Förstner, Jens AU - Thiede, Andreas AU - Reuter, Dirk AU - Zrenner, Artur ID - 39966 T2 - 11th International Conference on Quantum Dots TI - Ultrafast electric control of a single QD exciton ER - TY - JOUR AB - Metal-semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators. AU - Lahr, Oliver AU - Zhang, Zhipeng AU - Grotjahn, Frank AU - Schlupp, Peter AU - Vogt, Sofie AU - von Wenckstern, Holger AU - Thiede, Andreas AU - Grundmann, Marius ID - 39649 IS - 8 JF - IEEE Transactions on Electron Devices KW - Electrical and Electronic Engineering KW - Electronic KW - Optical and Magnetic Materials SN - 0018-9383 TI - Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs VL - 66 ER - TY - JOUR AB - We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse p/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3p within 100 ps which is below the dephasing time of the quantum dot exciton. AU - Widhalm, Alex AU - Mukherjee, Amlan AU - Krehs, Sebastian AU - Sharma, Nandlal AU - Kölling, Peter AU - Thiede, Andreas AU - Reuter, Dirk AU - Förstner, Jens AU - Zrenner, Artur ID - 3427 IS - 11 JF - Applied Physics Letters KW - tet_topic_qd SN - 0003-6951 TI - Ultrafast electric phase control of a single exciton qubit VL - 112 ER - TY - CONF AU - Meister, Tilo AU - Ellinger, Frank AU - Bartha, Johann W. AU - Berroth, Manfred AU - Burghartz, Joachim AU - Claus, Martin AU - Frey, Lothar AU - Gagliardi, Alessio AU - Grundmann, Marius AU - Hesselbarth, Jan AU - Klauk, Hagen AU - Leo, Karl AU - Lugli, Paolo AU - Mannsfeld, Stefan AU - Manoli, Yiannos AU - Negra, Renato AU - Neumaier, Daniel AU - Pfeiffer, Ullrich AU - Riedl, Thomas AU - Scheinert, Susanne AU - Scherf, Ullrich AU - Thiede, Andreas AU - Troster, Gerhard AU - Vossiek, Martin AU - Weigel, Robert AU - Wenger, Christian AU - Alavi, Golzar AU - Becherer, Markus AU - Chavarin, Carlos Alvarado AU - Darwish, Mohammed AU - Ellinger, Martin AU - Fan, Chun-Yu AU - Fritsch, Martin AU - Grotjahn, Frank AU - Gunia, Marco AU - Haase, Katherina AU - Hillger, Philipp AU - Ishida, Koichi AU - Jank, Michael AU - Knobelspies, Stefan AU - Kuhl, Matthias AU - Lupina, Grzegorz AU - Naghadeh, Shabnam Mohammadi AU - Munzenrieder, Niko AU - Ozbek, Sefa AU - Rasteh, Mahsa AU - Salvatore, Giovanni A. AU - Schrufer, Daniel AU - Strobel, Carsten AU - Theisen, Manuel AU - Tuckmantel, Christian AU - von Wenckstern, Holger AU - Wang, Zhenxing AU - Zhang, Zhipeng ID - 39651 T2 - 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) TI - Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems ER - TY - CONF AU - Ali, U. AU - Bober, M. AU - Thiede, Andreas ID - 39654 T2 - 2016 11th European Microwave Integrated Circuits Conference (EuMIC) TI - Design of voltage controlled oscillators (VCOs) in D-band and their phase noise measurements using frequency down-conversion ER - TY - CONF AU - Ali, U. AU - Bober, M. AU - Thiede, Andreas ID - 41915 T2 - 2016 German Microwave Conference (GeMiC) TI - An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology ER - TY - JOUR AU - Russer, Johannes A. AU - Uddin, Nasir AU - Awny, Ahmed Sanaa AU - Thiede, Andreas AU - Russer, Peter ID - 41866 IS - 3 JF - IEEE Electromagnetic Compatibility Magazine KW - Electrical and Electronic Engineering KW - Computer Networks and Communications KW - Instrumentation KW - Signal Processing KW - Software SN - 2162-2264 TI - Near-field measurement of stochastic electromagnetic fields VL - 4 ER - TY - CONF AU - Ali, U. AU - Bober, M. AU - Thiede, Andreas AU - Awny, A. AU - Fischer, G. ID - 41918 T2 - 2015 German Microwave Conference TI - High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology ER - TY - CONF AU - Ali, U. AU - Bober, M. AU - Thiede, A. AU - Wagner, S. ID - 41916 T2 - 2015 10th European Microwave Integrated Circuits Conference (EuMIC) TI - 100–166 GHz wide band high speed digital dynamic frequency divider design in 0.13 μm SiGe BiCMOS technology ER - TY - CONF AU - Ali, U. AU - Fischer, G. AU - Thiede, Andreas ID - 41917 T2 - 2015 German Microwave Conference TI - Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology ER - TY - JOUR AB - A millimeter wave frequency mixed-signal design of a 1-tap half-rate look-ahead decision feedback equalizer for 80 Gb/s short-reach optical communication systems is presented. On-wafer tests are developed to determine the maximum operating bit rate of the equalizer. Results are also presented for intersymbol interference mitigation at 80 Gb/s for a 20 GHz bandwidth-limited channel. Further improvements on the architecture of the 80 Gb/s equalizer are discussed and used in the design and on-wafer measurement of a 110 Gb/s equalizer. The equalizers are designed in a 0.13 μm SiGe:C BiCMOS technology. The 80 and 110 Gb/s versions dissipate 4 and 5.75 W, respectively and occupy 2 and 2.56 mm 2 , respectively. AU - Awny, Ahmed AU - Möller, Lothar AU - Junio, Josef AU - Scheytt, Christoph AU - Thiede, Andreas ID - 24310 IS - No.2 JF - IEEE JOURNAL OF SOLID-STATE CIRCUITS TI - Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer VL - Vol.49 ER - TY - CONF AB - We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture. AU - Möller, Lothar AU - Awny, Ahmed AU - Junio, Josef AU - Scheytt, Christoph AU - Thiede, Andreas ID - 24351 T2 - Optical Fiber Communication Conference TI - 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference ER - TY - CONF AU - Ali, U. AU - Thiede, Andreas ID - 41919 T2 - 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG) TI - A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology ER -