[{"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6569589","relation":"confirmation"}]},"abstract":[{"text":"A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.","lang":"eng"}],"publication":"2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,","citation":{"mla":"Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i> 2013, doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>.","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle, Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>}, booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>.","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” In <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>.","short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013."},"type":"conference","department":[{"_id":"58"}],"date_created":"2021-09-14T09:22:37Z","place":"Seattle, Washington","date_updated":"2022-02-17T09:05:42Z","title":"A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology","status":"public","year":"2013","publication_identifier":{"eisbn":["978-1-4673-6062-3"]},"author":[{"first_name":"Mohamed","last_name":"Elkhouly","full_name":"Elkhouly, Mohamed"},{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"first_name":"Chafik","last_name":"Meliani","full_name":"Meliani, Chafik"},{"first_name":"Frank","last_name":"Ellinger","full_name":"Ellinger, Frank"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}],"conference":{"start_date":"2013.06.02","end_date":"2013.06.04"},"user_id":"15931","doi":"10.1109/RFIC.2013.6569589","language":[{"iso":"eng"}],"_id":"24358"},{"year":"2013","status":"public","title":"245 GHz Subharmonic Receiver in SiGe","conference":{"end_date":"2013.06.07","start_date":"2013.06.02"},"author":[{"first_name":"Yanfei","last_name":"Mao","full_name":"Mao, Yanfei"},{"full_name":"Schmalz, Klaus","first_name":"Klaus","last_name":"Schmalz"},{"first_name":"Johannes","last_name":"Borngräber","full_name":"Borngräber, Johannes"},{"full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt","id":"37144"},{"full_name":"Meliani, Chafik","last_name":"Meliani","first_name":"Chafik"}],"publication_identifier":{"eisbn":["978-1-4673-6176-7"]},"date_updated":"2022-02-17T09:23:50Z","language":[{"iso":"eng"}],"_id":"24362","doi":"10.1109/MWSYM.2013.6697429","user_id":"15931","publication":"IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers","citation":{"short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, C. Meliani, in: IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, Seattle, Washington, 2013.","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, and Chafik Meliani. “245 GHz Subharmonic Receiver in SiGe.” In <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, and C. Meliani, “245 GHz Subharmonic Receiver in SiGe,” 2013, doi: <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>.","apa":"Mao, Y., Schmalz, K., Borngräber, J., Scheytt, C., &#38; Meliani, C. (2013). 245 GHz Subharmonic Receiver in SiGe. <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>","bibtex":"@inproceedings{Mao_Schmalz_Borngräber_Scheytt_Meliani_2013, place={Seattle, Washington}, title={245 GHz Subharmonic Receiver in SiGe}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>}, booktitle={IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Meliani, Chafik}, year={2013} }","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C, Meliani C. 245 GHz Subharmonic Receiver in SiGe. In: <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>, 2013, doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>."},"abstract":[{"text":"A subharmonic receiver for 245 GHz spectroscopy sensor applications have been proposed. The receiver consists of a CB (common base) LNA, 2 nd transconductance SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f T /f max =300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The receiver dissipates a power of 200 mW.","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6697429"}]},"place":"Seattle, Washington","date_created":"2021-09-14T09:22:42Z","type":"conference","department":[{"_id":"58"}]},{"user_id":"15931","language":[{"iso":"eng"}],"_id":"24360","date_updated":"2022-02-17T09:12:09Z","author":[{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"status":"public","title":"Wireless 100Gb/s Using A Powerand","year":"2013","department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:40Z","place":"Budapest","related_material":{"link":[{"relation":"confirmation","url":"https://www.wireless100gb.de/publication/ICC2013-Panel_P5_Christoph_Scheytt.pdf"}]},"citation":{"mla":"Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” <i>IEEE International Conference on Communications</i>, 2013.","bibtex":"@inproceedings{Scheytt_2013, place={Budapest}, title={Wireless 100Gb/s Using A Powerand}, booktitle={IEEE International Conference on Communications}, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. Wireless 100Gb/s Using A Powerand. In: <i>IEEE International Conference on Communications</i>. ; 2013.","ieee":"C. Scheytt, “Wireless 100Gb/s Using A Powerand,” 2013.","apa":"Scheytt, C. (2013). Wireless 100Gb/s Using A Powerand. <i>IEEE International Conference on Communications</i>.","chicago":"Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” In <i>IEEE International Conference on Communications</i>. Budapest, 2013.","short":"C. Scheytt, in: IEEE International Conference on Communications, Budapest, 2013."},"publication":"IEEE International Conference on Communications"},{"date_created":"2021-09-14T09:22:39Z","type":"misc","department":[{"_id":"58"}],"citation":{"mla":"Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>. 2013.","ama":"Scheytt C. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.; 2013.","bibtex":"@book{Scheytt_2013, title={Hardware-Effizientes Mixed-Signal Entzerrfilter}, author={Scheytt, Christoph}, year={2013} }","apa":"Scheytt, C. (2013). <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.","ieee":"C. Scheytt, <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>. 2013.","short":"C. Scheytt, Hardware-Effizientes Mixed-Signal Entzerrfilter, 2013.","chicago":"Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>, 2013."},"language":[{"iso":"eng"}],"_id":"24359","user_id":"15931","title":"Hardware-Effizientes Mixed-Signal Entzerrfilter","status":"public","year":"2013","author":[{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"}],"date_updated":"2022-02-17T09:09:43Z"},{"user_id":"15931","_id":"24339","language":[{"iso":"eng"}],"date_updated":"2022-01-10T10:46:14Z","author":[{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"},{"last_name":"Sun","first_name":"Yaoming","full_name":"Sun, Yaoming"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"full_name":"Mao, Yanfei","first_name":"Yanfei","last_name":"Mao"},{"full_name":"Wang, Ruoyu","first_name":"Ruoyu","last_name":"Wang"},{"full_name":"Debski, Wojciech","last_name":"Debski","first_name":"Wojciech"},{"last_name":"Winkler","first_name":"Wolfgang","full_name":"Winkler, Wolfgang"}],"title":"mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS","status":"public","year":"2013","department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:13Z","place":"Nürnberg Convention Center","related_material":{"link":[{"relation":"confirmation","url":"https://www.eumweek.com/archive/eumweek2013/2013/default.html"}]},"citation":{"mla":"Scheytt, Christoph, et al. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.” <i>W 06 (EuMC &#38; EuMIC)</i>, 2013.","bibtex":"@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Nürnberg Convention Center}, title={mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS}, booktitle={W 06 (EuMC &#38; EuMIC)}, author={Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler, Wolfgang}, year={2013} }","ama":"Scheytt C, Sun Y, Schmalz K, et al. mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. In: <i>W 06 (EuMC &#38; EuMIC)</i>. ; 2013.","ieee":"C. Scheytt <i>et al.</i>, “mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS,” 2013.","apa":"Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., &#38; Winkler, W. (2013). mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. <i>W 06 (EuMC &#38; EuMIC)</i>.","short":"C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler, in: W 06 (EuMC &#38; EuMIC), Nürnberg Convention Center, 2013.","chicago":"Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang, Wojciech Debski, and Wolfgang Winkler. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.” In <i>W 06 (EuMC &#38; EuMIC)</i>. Nürnberg Convention Center, 2013."},"publication":"W 06 (EuMC & EuMIC)"},{"abstract":[{"text":"In this paper, a novel 180°hybrid with different input frequencies is proposed to combine RF and local oscillator (LO) signals with different frequencies in a gate/base-pumped harmonic mixer. The detailed analysis and design procedures are presented in this paper. To further reduce the chip size, the multilayer metallization above the lossy silicon substrate is employed to implement the hybrid. A V-band down-converted 2× harmonic mixer in 90-nm CMOS process and a D-band down-converted 4× harmonic mixer in the 130-nm SiGe process are designed, fabricated, and measured to verify the concept. The 2× harmonic mixer possesses 0-dB conversion gain at 60 GHz with 0-dBm LO power with merely 2.4-mW dc power. The 4× harmonic mixer achieves 0.5-dB conversion gain at 120 GHz with 2-dBm LO power and 27.3-mW dc power. With the proposed reduced-size 180° hybrid, gate/base-pumped harmonic mixers are very attractive in transceivers demanding low LO frequency and power.","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6214582"}]},"citation":{"mla":"Kuo, Jhe-Jia, et al. “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2013, pp. 2473–85, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>.","bibtex":"@article{Kuo_Lien_Tsai_Lin_Schmalz_Scheytt_Wang_2013, title={Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies }, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Kuo, Jhe-Jia and Lien, Chun-Hsien and Tsai, Zuo-Min and Lin, Kun-You and Schmalz, Klaus and Scheytt, Christoph and Wang, Huei}, year={2013}, pages={2473–2485} }","ama":"Kuo J-J, Lien C-H, Tsai Z-M, et al. Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;60(8):2473-2485. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>","ieee":"J.-J. Kuo <i>et al.</i>, “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies ,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2473–2485, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>.","apa":"Kuo, J.-J., Lien, C.-H., Tsai, Z.-M., Lin, K.-Y., Schmalz, K., Scheytt, C., &#38; Wang, H. (2013). Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2473–2485. <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">https://doi.org/10.1109/TMTT.2012.2202039</a>","short":"J.-J. Kuo, C.-H. Lien, Z.-M. Tsai, K.-Y. Lin, K. Schmalz, C. Scheytt, H. Wang, Microwave Theory and Techniques, IEEE Transactions On 60 (2013) 2473–2485.","chicago":"Kuo, Jhe-Jia, Chun-Hsien Lien, Zuo-Min Tsai, Kun-You Lin, Klaus Schmalz, Christoph Scheytt, and Huei Wang. “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2013): 2473–85. <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">https://doi.org/10.1109/TMTT.2012.2202039</a>."},"issue":"8","publication":"Microwave Theory and Techniques, IEEE Transactions on","department":[{"_id":"58"}],"type":"journal_article","date_created":"2021-09-14T09:22:19Z","intvolume":"        60","date_updated":"2022-01-11T10:44:00Z","author":[{"first_name":"Jhe-Jia","last_name":"Kuo","full_name":"Kuo, Jhe-Jia"},{"full_name":"Lien, Chun-Hsien","first_name":"Chun-Hsien","last_name":"Lien"},{"full_name":"Tsai, Zuo-Min","last_name":"Tsai","first_name":"Zuo-Min"},{"full_name":"Lin, Kun-You","first_name":"Kun-You","last_name":"Lin"},{"last_name":"Schmalz","first_name":"Klaus","full_name":"Schmalz, Klaus"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"},{"first_name":"Huei","last_name":"Wang","full_name":"Wang, Huei"}],"year":"2013","title":"Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies ","status":"public","volume":60,"doi":"10.1109/TMTT.2012.2202039","user_id":"15931","language":[{"iso":"eng"}],"_id":"24344","page":"2473-2485"},{"department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:18Z","place":"HNI, Fürstenallee 11, 33102 Paderborn","abstract":[{"lang":"ger","text":"50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor"}],"citation":{"mla":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” <i>HNI-Forum September </i>, 2013.","bibtex":"@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn}, title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum September }, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: <i>HNI-Forum September </i>. ; 2013.","ieee":"C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.","apa":"Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. <i>HNI-Forum September </i>.","chicago":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” In <i>HNI-Forum September </i>. HNI, Fürstenallee 11, 33102 Paderborn, 2013.","short":"C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn, 2013."},"publication":"HNI-Forum September ","user_id":"15931","_id":"24343","language":[{"iso":"eng"}],"date_updated":"2022-01-11T10:42:53Z","author":[{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"year":"2013","status":"public","title":"Nano-/Mikroelektronik als Enabler für neue Ansätze"},{"related_material":{"link":[{"relation":"confirmation","url":"https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf"}]},"citation":{"mla":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013.","ama":"Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>. ; 2013.","bibtex":"@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE 2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt, Christoph}, year={2013} }","apa":"Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>.","ieee":"C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.","short":"C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.","chicago":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013."},"publication":"RF-MST Cluster Workshop on MEMSWAVE 2013","department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:21Z","date_updated":"2022-01-11T10:52:51Z","author":[{"id":"37144","last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph"}],"year":"2013","title":"RF-MST Cluster Workshop on MEMSWAVE 2013","status":"public","user_id":"15931","_id":"24345","language":[{"iso":"eng"}]},{"date_updated":"2022-01-10T11:36:56Z","author":[{"id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt"},{"full_name":"Kraemer, Rolf","last_name":"Kraemer","first_name":"Rolf"},{"full_name":"Kallfass, Ingmar","last_name":"Kallfass","first_name":"Ingmar"}],"year":"2013","title":"Strategies for Energy-Efficient 100 Gb/s Baseband","status":"public","user_id":"15931","language":[{"iso":"eng"}],"_id":"24340","related_material":{"link":[{"relation":"confirmation","url":"https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf"}]},"citation":{"chicago":"Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for Energy-Efficient 100 Gb/s Baseband.” In <i>W 19 (EuMC \\&#38; EuMIC)</i>. Nürnberg Convention Center, 2013.","short":"C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \\&#38; EuMIC), Nürnberg Convention Center, 2013.","ieee":"C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient 100 Gb/s Baseband,” 2013.","apa":"Scheytt, C., Kraemer, R., &#38; Kallfass, I. (2013). Strategies for Energy-Efficient 100 Gb/s Baseband. <i>W 19 (EuMC \\&#38; EuMIC)</i>.","bibtex":"@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W 19 (EuMC \\&#38; EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass, Ingmar}, year={2013} }","ama":"Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s Baseband. In: <i>W 19 (EuMC \\&#38; EuMIC)</i>. ; 2013.","mla":"Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.” <i>W 19 (EuMC \\&#38; EuMIC)</i>, 2013."},"publication":"W 19 (EuMC \\& EuMIC)","department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:14Z","place":"Nürnberg Convention Center"},{"department":[{"_id":"58"}],"type":"conference","place":"Bordeaux, France,","date_created":"2021-09-14T09:22:15Z","related_material":{"link":[{"url":"https://ris.uni-paderborn.de/record/24341","relation":"confirmation"}]},"abstract":[{"text":"This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .","lang":"eng"}],"citation":{"chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” In <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. Bordeaux, France, 2013. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>.","short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi: <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>.","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux, France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }, DOI={<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>}, booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>","mla":"Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i> 2013, doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>."},"publication":"IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,","doi":"10.1109/BCTM.2013.6798158","user_id":"15931","language":[{"iso":"eng"}],"_id":"24341","date_updated":"2022-01-11T09:20:48Z","author":[{"last_name":"Elkhouly","first_name":"Mohamed","full_name":"Elkhouly, Mohamed"},{"last_name":"Mao","first_name":"Yanfei","full_name":"Mao, Yanfei"},{"full_name":"Meliani, Chafik","last_name":"Meliani","first_name":"Chafik"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"}],"title":"A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ","status":"public","year":"2013"},{"doi":"10.1109/PIMRC.2013.6666358","user_id":"15931","_id":"24342","language":[{"iso":"eng"}],"date_updated":"2022-01-11T10:29:40Z","conference":{"start_date":"08.09.2013","end_date":"11.09.2013"},"author":[{"last_name":"Wang","first_name":"Ruoyu","full_name":"Wang, Ruoyu"},{"full_name":"Kaynak, Mehmet","first_name":"Mehmet","last_name":"Kaynak"},{"full_name":"Sun, Yaoming","first_name":"Yaoming","last_name":"Sun"},{"last_name":"Borngräber","first_name":"Johannes","full_name":"Borngräber, Johannes"},{"full_name":"Beer, Stefan","last_name":"Beer","first_name":"Stefan"},{"first_name":"B.","last_name":"Goettel","full_name":"Goettel, B."},{"id":"37144","last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph"}],"title":"122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications","year":"2013","status":"public","department":[{"_id":"58"}],"type":"conference","place":"Hilton, London Metropole","date_created":"2021-09-14T09:22:17Z","abstract":[{"text":"Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6666358"}]},"citation":{"mla":"Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>, 2013, doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","bibtex":"@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton, London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}, DOI={<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>}, booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}, year={2013} }","ama":"Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. In: <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>","ieee":"R. Wang <i>et al.</i>, “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","apa":"Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &#38; Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>","short":"R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt, in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, Hilton, London Metropole, 2013.","chicago":"Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer, B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. Hilton, London Metropole, 2013. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>."},"publication":"24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications"},{"department":[{"_id":"58"}],"type":"journal_article","date_created":"2021-09-14T09:22:23Z","abstract":[{"text":"In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6492143"}]},"citation":{"bibtex":"@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}, volume={61}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>}, number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}, year={2013}, pages={2185–2194} }","ama":"Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;61(5):2185-2194. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>","mla":"Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 61, no. 5, 2013, pp. 2185–94, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","short":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory and Techniques, IEEE Transactions On 61 (2013) 2185–2194.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 61, no. 5 (2013): 2185–94. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>.","ieee":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 61, no. 5, pp. 2185–2194, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2013). A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>61</i>(5), 2185–2194. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>"},"issue":"5","publication":"Microwave Theory and Techniques, IEEE Transactions on","volume":61,"user_id":"15931","doi":"10.1109/TMTT.2013.2253792","language":[{"iso":"eng"}],"_id":"24347","page":"2185-2194","intvolume":"        61","date_updated":"2022-01-18T10:15:31Z","author":[{"last_name":"Laemmle","first_name":"Benjamin","full_name":"Laemmle, Benjamin"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"},{"full_name":"Weigel, Robert","last_name":"Weigel","first_name":"Robert"},{"full_name":"Kissinger, Dietmar","last_name":"Kissinger","first_name":"Dietmar"}],"year":"2013","status":"public","title":"A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology"},{"user_id":"15931","language":[{"iso":"eng"}],"_id":"24348","date_updated":"2022-01-18T10:17:43Z","status":"public","year":"2013","title":"Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren","author":[{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"},{"first_name":"Günter","last_name":"Grau","full_name":"Grau, Günter"}],"type":"conference","department":[{"_id":"58"}],"date_created":"2021-09-14T09:22:24Z","place":"Heinz Nixdorf MuseumsForum Paderborn, Germany","related_material":{"link":[{"url":"https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm","relation":"confirmation"}]},"publication":"Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut","citation":{"ama":"Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. In: <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. ; 2013.","bibtex":"@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn, Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph and Grau, Günter}, year={2013} }","mla":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>, 2013.","chicago":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013.","short":"C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013.","apa":"Scheytt, C., &#38; Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>.","ieee":"C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013."}},{"date_updated":"2022-01-18T10:14:15Z","author":[{"full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph","id":"37144"}],"title":"Introduction to Integrated mm‐Wave Sensors","year":"2013","status":"public","user_id":"15931","language":[{"iso":"eng"}],"_id":"24346","citation":{"short":"C. Scheytt, in: System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors, Karlsruhe, Germany, 2013.","chicago":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” In <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. Karlsruhe, Germany, 2013.","ieee":"C. Scheytt, “Introduction to Integrated mm‐Wave Sensors,” 2013.","apa":"Scheytt, C. (2013). Introduction to Integrated mm‐Wave Sensors. <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>.","bibtex":"@inproceedings{Scheytt_2013, place={Karlsruhe, Germany}, title={Introduction to Integrated mm‐Wave Sensors}, booktitle={System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors}, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. Introduction to Integrated mm‐Wave Sensors. In: <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. ; 2013.","mla":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>, 2013."},"publication":"System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors","department":[{"_id":"58"}],"type":"conference","place":"Karlsruhe, Germany","date_created":"2021-09-14T09:22:22Z"},{"author":[{"full_name":"Elkhouly, Mohamed","last_name":"Elkhouly","first_name":"Mohamed"},{"full_name":"Glisic, Srdjan","last_name":"Glisic","first_name":"Srdjan"},{"last_name":"Meliani","first_name":"Chafik","full_name":"Meliani, Chafik"},{"full_name":"Ellinger, Frank","first_name":"Frank","last_name":"Ellinger"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"status":"public","title":"220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology","year":"2013","date_updated":"2022-01-18T10:25:50Z","language":[{"iso":"eng"}],"_id":"24350","page":"1-13","volume":"PP","user_id":"15931","doi":"10.1109/TMTT.2013.2258032","citation":{"ieee":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 1–13, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","apa":"Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>","short":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2013) 1–13.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> PP, no. 99 (2013): 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>.","mla":"Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. PP, no. 99, 2013, pp. 1–13, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","bibtex":"@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology}, volume={PP}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }","ama":"Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;PP(99):1-13. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>"},"publication":"Microwave Theory and Techniques, IEEE Transactions on","issue":"99","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6507360","relation":"confirmation"}]},"abstract":[{"lang":"eng","text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication."}],"date_created":"2021-09-14T09:22:27Z","department":[{"_id":"58"}],"type":"journal_article"},{"date_updated":"2022-01-18T10:29:31Z","intvolume":"        74","title":"Analysis and minimization of substrate spurs in fractional-N frequency synthesizers","status":"public","year":"2013","author":[{"full_name":"Osmany, Sabbir Ahmed","first_name":"Sabbir Ahmed","last_name":"Osmany"},{"full_name":"Herzel, Frank","last_name":"Herzel","first_name":"Frank"},{"full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt","id":"37144"}],"doi":"10.1007/s10470-012-0002-x","user_id":"15931","volume":74,"page":"545-556","_id":"24352","language":[{"iso":"eng"}],"related_material":{"link":[{"url":"https://www.researchgate.net/publication/233895658_Analysis_and_minimization_of_substrate_spurs_in_fractional-N_frequency_synthesizers","relation":"confirmation"}]},"abstract":[{"lang":"eng","text":"This paper analyses substrate-related spurious tones in fractional-N phase-\r\nlocked loops with integrated VCOs. Spur positions are calculated and experimentally\r\nverified as a function of the divider ratios of prescaler and programmable divider.\r\nFor an integrated wideband PLL in SiGe BiCMOS technology the spur power levels\r\nare measured and compared with theoretical expectations. The power in these spurs is\r\nminimized by layout techniques shielding the reference input buffer. Spur minimization\r\nby using a variable reference frequency is experimentally demonstrated. Based on this\r\nobservation, a programmable integer-N PLL for driving the fractional-N synthesizer is\r\nsuggested to reduce the worst-case spur level significantly.\r\nIndex Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate\r\nspurs, phase-locked loops (PLLs), phase noise.\r\n"}],"issue":"3","publication":"Analog Integrated Circuits and Signal Processing","citation":{"chicago":"Osmany, Sabbir Ahmed, Frank Herzel, and Christoph Scheytt. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i> 74, no. 3 (2013): 545–56. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>.","short":"S.A. Osmany, F. Herzel, C. Scheytt, Analog Integrated Circuits and Signal Processing 74 (2013) 545–556.","apa":"Osmany, S. A., Herzel, F., &#38; Scheytt, C. (2013). Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>, <i>74</i>(3), 545–556. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>","ieee":"S. A. Osmany, F. Herzel, and C. Scheytt, “Analysis and minimization of substrate spurs in fractional-N frequency synthesizers,” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, pp. 545–556, 2013, doi: <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>.","ama":"Osmany SA, Herzel F, Scheytt C. Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>. 2013;74(3):545-556. doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>","bibtex":"@article{Osmany_Herzel_Scheytt_2013, title={Analysis and minimization of substrate spurs in fractional-N frequency synthesizers}, volume={74}, DOI={<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>}, number={3}, journal={Analog Integrated Circuits and Signal Processing}, author={Osmany, Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}, year={2013}, pages={545–556} }","mla":"Osmany, Sabbir Ahmed, et al. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, 2013, pp. 545–56, doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>."},"type":"journal_article","department":[{"_id":"58"}],"date_created":"2021-09-14T09:22:30Z"},{"date_created":"2021-09-14T09:22:26Z","place":"Gothenburg, Sweden","type":"conference","department":[{"_id":"58"}],"publication":"7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION","citation":{"mla":"Beer, Stefan, et al. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>, 2013.","ama":"Beer S, Girma MG, Sun Y, et al. Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. In: <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. ; 2013.","bibtex":"@inproceedings{Beer_Girma_Sun_Winkler_Debski_Paaso_Kunkel_Scheytt_Hasch_Zwick_2013, place={Gothenburg, Sweden}, title={Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC}, booktitle={7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION}, author={Beer, Stefan and Girma, Mekdes Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and Zwick, Thomas}, year={2013} }","apa":"Beer, S., Girma, M. G., Sun, Y., Winkler, W., Debski, W., Paaso, J., Kunkel, G., Scheytt, C., Hasch, J., &#38; Zwick, T. (2013). Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>.","ieee":"S. Beer <i>et al.</i>, “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC,” 2013.","chicago":"Beer, Stefan, Mekdes Gebresilassie Girma, Yaoming Sun, Wolfgang Winkler, Wojciech Debski, Jaska Paaso, Gerhard Kunkel, Christoph Scheytt, Jürgen Hasch, and Thomas Zwick. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” In <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. Gothenburg, Sweden, 2013.","short":"S. Beer, M.G. Girma, Y. Sun, W. Winkler, W. Debski, J. Paaso, G. Kunkel, C. Scheytt, J. Hasch, T. Zwick, in: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION, Gothenburg, Sweden, 2013."},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6546229"}]},"abstract":[{"text":"This paper presents the packaging technology and the integrated antenna design for a miniaturized 122-GHz radar sensor. The package layout and the assembly process are shortly explained. Measurements of the antenna including the flip chip interconnect are presented that have been achieved by replacing the IC with a dummy chip that only contains a through-line. Afterwards, radiation pattern measurements are shown that were recorded using the radar sensor as transmitter. Finally, details of the fully integrated radar sensor are given, together with results of the first Doppler measurements.","lang":"eng"}],"_id":"24349","language":[{"iso":"eng"}],"user_id":"15931","status":"public","title":"Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC","year":"2013","author":[{"last_name":"Beer","first_name":"Stefan","full_name":"Beer, Stefan"},{"full_name":"Girma, Mekdes Gebresilassie","last_name":"Girma","first_name":"Mekdes Gebresilassie"},{"last_name":"Sun","first_name":"Yaoming","full_name":"Sun, Yaoming"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"},{"full_name":"Debski, Wojciech","last_name":"Debski","first_name":"Wojciech"},{"first_name":"Jaska","last_name":"Paaso","full_name":"Paaso, Jaska"},{"first_name":"Gerhard","last_name":"Kunkel","full_name":"Kunkel, Gerhard"},{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"},{"full_name":"Hasch, Jürgen","first_name":"Jürgen","last_name":"Hasch"},{"full_name":"Zwick, Thomas","first_name":"Thomas","last_name":"Zwick"}],"publication_identifier":{"eisbn":["978-88-907018-3-2"]},"date_updated":"2022-01-18T10:23:24Z"},{"place":"Anaheim, California United States","date_created":"2021-09-14T09:22:28Z","type":"conference","department":[{"_id":"58"},{"_id":"51"}],"publication":"Optical Fiber Communication Conference","citation":{"ieee":"L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference,” 2013, doi: <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","apa":"Möller, L., Awny, A., Junio, J., Scheytt, C., &#38; Thiede, A. (2013). 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. <i>Optical Fiber Communication Conference</i>. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>","chicago":"Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In <i>Optical Fiber Communication Conference</i>. Anaheim, California United States, 2013. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>.","short":"L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication Conference, Anaheim, California United States, 2013.","mla":"Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” <i>Optical Fiber Communication Conference</i>, 2013, doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","bibtex":"@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}, DOI={<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}, year={2013} }","ama":"Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. In: <i>Optical Fiber Communication Conference</i>. ; 2013. doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>"},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6533180"}]},"abstract":[{"lang":"eng","text":"We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture."}],"_id":"24351","language":[{"iso":"eng"}],"doi":"10.1364/OFC.2013.OW4B.2 ","user_id":"158","status":"public","title":"80 Gb/s Decision Feedback Equalizer for Intersymbol Interference","year":"2013","author":[{"full_name":"Möller, Lothar","last_name":"Möller","first_name":"Lothar"},{"last_name":"Awny","first_name":"Ahmed","full_name":"Awny, Ahmed"},{"full_name":"Junio, Josef","last_name":"Junio","first_name":"Josef"},{"id":"37144","first_name":"Christoph","orcid":"https://orcid.org/0000-0002-5950-6618","last_name":"Scheytt","full_name":"Scheytt, Christoph"},{"first_name":"Andreas","last_name":"Thiede","full_name":"Thiede, Andreas","id":"538"}],"date_updated":"2023-01-25T11:03:26Z"},{"department":[{"_id":"58"}],"type":"conference","place":"Amsterdam, Netherland","date_created":"2021-09-14T12:54:38Z","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6483766"}]},"abstract":[{"lang":"eng","text":"A  subharmonic  receiver  for  sensing  applications  in  \r\nthe 245 GHz ISM band has been proposed. The receiver consists \r\nof a  single-ended common base LNA, a  60  GHz push-push  VCO \r\nwith 1/32 divider, a transconductance 4th subharmonic mixer and \r\nIF  amplifier.  The  receiver  is  fabricated  in  fT/fmax=300/500  GHz  \r\nSiGe:  C  BiCMOS  technology.  Its  measured  single-ended  gain  is  \r\n21  dB  at  243  GHz  with  tuning  range  of  12  GHz,  and  the  single-\r\nside  band  noise  figure  is  32  dB.  The  input  1-dB  compression  \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW."}],"citation":{"ieee":"Y. Mao, C. Scheytt, K. Schmalz, and J. Borngräber, “245 GHz subharmonic receiver in SiGe,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–186.","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–86.","apa":"Mao, Y., Scheytt, C., Schmalz, K., &#38; Borngräber, J. (2012). 245 GHz subharmonic receiver in SiGe. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–186.","bibtex":"@inproceedings{Mao_Scheytt_Schmalz_Borngräber_2012, place={Amsterdam, Netherland}, title={245 GHz subharmonic receiver in SiGe}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Mao, Yanfei and Scheytt, Christoph and Schmalz, Klaus and Borngräber, Johannes}, year={2012}, pages={183–186} }","chicago":"Mao, Yanfei, Christoph Scheytt, Klaus Schmalz, and Johannes Borngräber. “245 GHz Subharmonic Receiver in SiGe.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–86. Amsterdam, Netherland, 2012.","ama":"Mao Y, Scheytt C, Schmalz K, Borngräber J. 245 GHz subharmonic receiver in SiGe. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:183-186.","short":"Y. Mao, C. Scheytt, K. Schmalz, J. Borngräber, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, Amsterdam, Netherland, 2012, pp. 183–186."},"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","user_id":"15931","language":[{"iso":"eng"}],"_id":"24401","page":"183-186","date_updated":"2022-01-06T06:56:20Z","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"author":[{"last_name":"Mao","first_name":"Yanfei","full_name":"Mao, Yanfei"},{"full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph","id":"37144"},{"full_name":"Schmalz, Klaus","first_name":"Klaus","last_name":"Schmalz"},{"last_name":"Borngräber","first_name":"Johannes","full_name":"Borngräber, Johannes"}],"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"title":"245 GHz subharmonic receiver in SiGe","status":"public","year":"2012"},{"type":"conference","department":[{"_id":"58"}],"date_created":"2021-09-14T12:54:39Z","related_material":{"link":[{"relation":"confirmation","url":"978-2-87487-028-6"}]},"abstract":[{"lang":"eng","text":"The  design  of  a  complex  integrated  transceiver  for  \r\n121–124 GHz is presented. The transceiver consists of the \r\ntransmitter with VCO, power amplifier and power detectors, the \r\nreceiver  with  LNA,  two  mixers  for  quadrature  receive  path  and  \r\nvariable  gain  amplifiers  for  IF-output  and  the  digital  control  \r\ncircuits with SPI-interface. A central part is the  VCO with DAC \r\nand  memory  for  on-chip  storage  of  programmable  frequency  \r\nramps  for  FMCW  radar  applications.  The  oscillator  phase  noise  \r\nis -92 dBc/Hz at 1MHz offset. For calibration of the radar-system \r\non  chip,  a  frequency  measurement  unit  is  integrated.  The  radar  \r\nchip has  power consumption of 380 mW and occupies an area  of \r\n1.8 mm x 1.5 mm. Several examples of frequency ramp \r\ngeneration  are  presented.  The  chip  is  intended  for  integration  \r\ntogether with antenna in a single package."}],"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","citation":{"ieee":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, and C. Scheytt, “120 GHz Radar Mixed-Signal Transceiver,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–194.","apa":"Debski, W., Winkler, W., Sun, Y., Marinkovic, M., Borngräber, J., &#38; Scheytt, C. (2012). 120 GHz Radar Mixed-Signal Transceiver. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–194.","short":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, C. Scheytt, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012, pp. 191–194.","chicago":"Debski, Wojciech, Wolfgang Winkler, Yaoming Sun, Miroslav Marinkovic, Johannes Borngräber, and Christoph Scheytt. “120 GHz Radar Mixed-Signal Transceiver.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–94, 2012.","mla":"Debski, Wojciech, et al. “120 GHz Radar Mixed-Signal Transceiver.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–94.","bibtex":"@inproceedings{Debski_Winkler_Sun_Marinkovic_Borngräber_Scheytt_2012, title={120 GHz Radar Mixed-Signal Transceiver}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Debski, Wojciech and Winkler, Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={191–194} }","ama":"Debski W, Winkler W, Sun Y, Marinkovic M, Borngräber J, Scheytt C. 120 GHz Radar Mixed-Signal Transceiver. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:191-194."},"user_id":"15931","page":"191-194","_id":"24402","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:56:20Z","year":"2012","status":"public","title":"120 GHz Radar Mixed-Signal Transceiver","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"author":[{"last_name":"Debski","first_name":"Wojciech","full_name":"Debski, Wojciech"},{"first_name":"Wolfgang","last_name":"Winkler","full_name":"Winkler, Wolfgang"},{"full_name":"Sun, Yaoming","first_name":"Yaoming","last_name":"Sun"},{"last_name":"Marinkovic","first_name":"Miroslav","full_name":"Marinkovic, Miroslav"},{"full_name":"Borngräber, Johannes","last_name":"Borngräber","first_name":"Johannes"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}]}]