@inproceedings{39516,
  author       = {{Kanwar, K. and Geneiss, V. and Mager, T. and Scheele, S. and Ballhausen, U. and Hedayat, C. and Hilleringmann, Ulrich}},
  booktitle    = {{2013 21st International Conference on Software, Telecommunications and Computer Networks - (SoftCOM 2013)}},
  publisher    = {{IEEE}},
  title        = {{{Design and analysis of UHF RFID tag for a rubber transmission belt based on 3D electrical model}}},
  doi          = {{10.1109/softcom.2013.6671864}},
  year         = {{2013}},
}

@inproceedings{39515,
  author       = {{Assion, F. and Fischer, C. and Schonhof, M. and Hilleringmann, Ulrich and Hedayat, C.}},
  booktitle    = {{2013 IEEE International Conference on Industrial Technology (ICIT)}},
  publisher    = {{IEEE}},
  title        = {{{Designing output-power-optimized thermoelectric generators via analytic and finite element method modelling}}},
  doi          = {{10.1109/icit.2013.6505756}},
  year         = {{2013}},
}

@article{39707,
  author       = {{Kasdorf, Olga and Vollbrecht, Joachim and Ohms, Benjamin and Hilleringmann, Ulrich and Bock, Harald and Kitzerow, Heinz-Siegfried}},
  issn         = {{0363-907X}},
  journal      = {{International Journal of Energy Research}},
  keywords     = {{Energy Engineering and Power Technology, Fuel Technology, Nuclear Energy and Engineering, Renewable Energy, Sustainability and the Environment}},
  number       = {{4}},
  pages        = {{452--458}},
  publisher    = {{Hindawi Limited}},
  title        = {{{Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator}}},
  doi          = {{10.1002/er.3127}},
  volume       = {{38}},
  year         = {{2013}},
}

@article{39507,
  author       = {{Jucá, S.C.S. and Carvalho, P.C.M. and Pereira, R.I.S. and Petrov, Dmitry and Hilleringmann, Ulrich}},
  issn         = {{2172-038X}},
  journal      = {{Renewable Energy and Power Quality Journal}},
  keywords     = {{Electrical and Electronic Engineering, Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment}},
  pages        = {{712--717}},
  publisher    = {{AEDERMACP (European Association for the Development of Renewable Energies and Power Quality)}},
  title        = {{{Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators}}},
  doi          = {{10.24084/repqj11.425}},
  year         = {{2013}},
}

@article{39514,
  abstract     = {{<jats:title>ABSTRACT</jats:title><jats:p>The continues development of thermoelectric generators causes a permanent improvement of their characteristics. New types of thermoelectric generators can work at temperatures up to 1000 K. With this, special measurement equipment is needed to control the electrical parameters of the new developed specimens. The devices must be tested over the whole range of operating temperatures. For each temperature value a series of electrical measurements has to be performed. To establish the maximal output power of the thermoelectric generators, a load resistor with variable resistance has to be connected to the output of thermoelectric generator. The measurement system should measure the electrical current through the load resistor and the voltage over this resistor to determine the device parameters. A large amount of measurement data have to be collected and processed to evaluate the electrical characteristics of the specimen and to present them in graphical form, suitable for the comparison with others specimens.</jats:p>}},
  author       = {{Petrov, Dmitry and Assion, Fabian and Hilleringmann, Ulrich}},
  issn         = {{0272-9172}},
  journal      = {{MRS Proceedings}},
  keywords     = {{General Engineering}},
  pages        = {{191--196}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Design and implementation of a measurement system for automatically measurement of electrical parameters of thermoelectric generators}}},
  doi          = {{10.1557/opl.2013.318}},
  volume       = {{1490}},
  year         = {{2013}},
}

@article{39520,
  author       = {{Brockmeier, A and Rodriguez, F J Santos and Harrison, M and Hilleringmann, Ulrich}},
  issn         = {{0960-1317}},
  journal      = {{Journal of Micromechanics and Microengineering}},
  keywords     = {{Electrical and Electronic Engineering, Mechanical Engineering, Mechanics of Materials, Electronic, Optical and Magnetic Materials}},
  number       = {{12}},
  publisher    = {{IOP Publishing}},
  title        = {{{Surface tension and its role for vertical wet etching of silicon}}},
  doi          = {{10.1088/0960-1317/22/12/125012}},
  volume       = {{22}},
  year         = {{2012}},
}

@article{39522,
  author       = {{Brockmeier, A and Rodriguez, F J Santos and Harrison, M and Hilleringmann, Ulrich}},
  issn         = {{0960-1317}},
  journal      = {{Journal of Micromechanics and Microengineering}},
  keywords     = {{Electrical and Electronic Engineering, Mechanical Engineering, Mechanics of Materials, Electronic, Optical and Magnetic Materials}},
  number       = {{12}},
  publisher    = {{IOP Publishing}},
  title        = {{{Surface tension and its role for vertical wet etching of silicon}}},
  doi          = {{10.1088/0960-1317/22/12/125012}},
  volume       = {{22}},
  year         = {{2012}},
}

@book{39512,
  author       = {{Hilleringmann, Ulrich}},
  isbn         = {{9783519061588}},
  publisher    = {{Vieweg+Teubner Verlag}},
  title        = {{{Mikrosystemtechnik auf Silizium}}},
  doi          = {{10.1007/978-3-322-92766-8}},
  year         = {{2012}},
}

@article{39533,
  abstract     = {{<jats:p>Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic.  The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.</jats:p>}},
  author       = {{Vidor, Fábio Fedrizzi and Wirth, Gilson Inácio and Wolff, Karsten and Hilleringmann, Ulrich}},
  issn         = {{1938-5862}},
  journal      = {{ECS Transactions}},
  keywords     = {{General Medicine}},
  number       = {{1}},
  pages        = {{109--115}},
  publisher    = {{The Electrochemical Society}},
  title        = {{{Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors}}},
  doi          = {{10.1149/1.3615183}},
  volume       = {{39}},
  year         = {{2011}},
}

@article{39527,
  author       = {{Wolff, K. and Hilleringmann, Ulrich}},
  issn         = {{0038-1101}},
  journal      = {{Solid-State Electronics}},
  keywords     = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
  number       = {{1}},
  pages        = {{110--114}},
  publisher    = {{Elsevier BV}},
  title        = {{{Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric}}},
  doi          = {{10.1016/j.sse.2011.01.046}},
  volume       = {{62}},
  year         = {{2011}},
}

@inproceedings{39536,
  author       = {{Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}},
  booktitle    = {{2011 Semiconductor Conference Dresden}},
  publisher    = {{IEEE}},
  title        = {{{Characterization of SiON integrated waveguides via FTIR and AFM measurements}}},
  doi          = {{10.1109/scd.2011.6068744}},
  year         = {{2011}},
}

@inproceedings{39528,
  author       = {{Wiegand, C. and Hangmann, C. and Hedayat, C. and Hilleringmann, Ulrich}},
  booktitle    = {{2011 Semiconductor Conference Dresden}},
  publisher    = {{IEEE}},
  title        = {{{Modeling and simulation of arbitrary ordered nonlinear charge-pump phase-locked loops}}},
  doi          = {{10.1109/scd.2011.6068711}},
  year         = {{2011}},
}

@inproceedings{39530,
  author       = {{Hilleringmann, Ulrich and Wolff, K. and Assion, F. and Vidor, F. F. and Wirth, G. I.}},
  booktitle    = {{IEEE Africon '11}},
  publisher    = {{IEEE}},
  title        = {{{Semiconductor nanoparticles for electronic device integration on foils}}},
  doi          = {{10.1109/afrcon.2011.6071983}},
  year         = {{2011}},
}

@inproceedings{39537,
  author       = {{Reinhold, C and Hangmann, C and Mager, T and Hedayat, C and Hilleringmann, Ulrich}},
  booktitle    = {{Proc. 5th Int. Conf. on electromagnetic Near-field Characterization and Imaging (ICONIC) 2011}},
  pages        = {{1–4}},
  title        = {{{Plane wave spectrum expansion from near-field measurements on no-planar lattices}}},
  year         = {{2011}},
}

@inproceedings{39529,
  author       = {{Meyer zu Hoberge, S. and Hilleringmann, Ulrich and Jochheim, C. and Liebich, M.}},
  booktitle    = {{IEEE Africon '11}},
  publisher    = {{IEEE}},
  title        = {{{Piezoelectric sensor array with evaluation electronic for counting grains in seed drills}}},
  doi          = {{10.1109/afrcon.2011.6072063}},
  year         = {{2011}},
}

@article{39871,
  abstract     = {{<jats:p>Abstract. Surface acoustic wave sensors consist of a piezoelectric substrate with metal interdigital transducers (IDT) on top. The acoustic waves are generated on the surface of the substrate by a radio wave, as it is well known in band pass filters. The devices can be used as wireless telemetric sensors for temperature and humidity, transmitting the sensed signal as a shift of the sensor’s resonance frequency.
                    </jats:p>}},
  author       = {{Dierkes, M. and Hilleringmann, Ulrich}},
  issn         = {{1684-9973}},
  journal      = {{Advances in Radio Science}},
  pages        = {{131--133}},
  publisher    = {{Copernicus GmbH}},
  title        = {{{Telemetric surface acoustic wave sensor for humidity}}},
  doi          = {{10.5194/ars-1-131-2003}},
  volume       = {{1}},
  year         = {{2010}},
}

@article{39539,
  abstract     = {{<jats:p>Abstract. The analysis of the mixed analogue and digital structure of charge-pump phase-locked loops (CP-PLL) is a challenge in modelling and simulation. In most cases the system is designed and characterized using its continuous linear model or its discrete linear model neglecting its non-linear switching behaviour. I.e., the time-varying model is approximated by a time-invariant representation using its average dynamics. Depending on what kind of phase detector is used, the scopes of validity of these approximations are different. Here, a preeminent characterization and simulation technique based on the systems event-driven feature is presented, merging the logical and analogue inherent characteristics of the system. In particular, the high-grade non-linear locking process and the dead-zone are analyzed.
                    </jats:p>}},
  author       = {{Wiegand, C. and Hedayat, C. and Hilleringmann, Ulrich}},
  issn         = {{1684-9973}},
  journal      = {{Advances in Radio Science}},
  pages        = {{161--166}},
  publisher    = {{Copernicus GmbH}},
  title        = {{{Non-linear behaviour of charge-pump phase-locked loops}}},
  doi          = {{10.5194/ars-8-161-2010}},
  volume       = {{8}},
  year         = {{2010}},
}

@article{39869,
  abstract     = {{<jats:p>Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V.
                    </jats:p>}},
  author       = {{Pannemannn, C. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{1684-9973}},
  journal      = {{Advances in Radio Science}},
  pages        = {{219--221}},
  publisher    = {{Copernicus GmbH}},
  title        = {{{Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications}}},
  doi          = {{10.5194/ars-1-219-2003}},
  volume       = {{1}},
  year         = {{2010}},
}

@inproceedings{39540,
  author       = {{Wolff, Karsten and Hilleringmann, Ulrich}},
  booktitle    = {{2010 Proceedings of the European Solid State Device Research Conference}},
  publisher    = {{IEEE}},
  title        = {{{Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors}}},
  doi          = {{10.1109/essderc.2010.5618383}},
  year         = {{2010}},
}

@inproceedings{39545,
  author       = {{Assion, F and Wolff, K and Hilleringmann, Ulrich}},
  booktitle    = {{Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain}},
  pages        = {{17}},
  title        = {{{Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate}}},
  volume       = {{1416}},
  year         = {{2010}},
}