@inproceedings{39835,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@inproceedings{39834,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@inbook{39850,
  abstract     = {{In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.}},
  author       = {{Hilleringmann, Ulrich}},
  booktitle    = {{Silizium-Halbleitertechnologie}},
  isbn         = {{978-3-322-94072-8}},
  pages        = {{65–90}},
  publisher    = {{Vieweg+Teubner Verlag}},
  title        = {{{Ätztechnik}}},
  doi          = {{10.1007/978-3-322-94072-8_5}},
  year         = {{2004}},
}

@inproceedings{39872,
  author       = {{Hilleringmann, Ulrich and Pannemann, C.}},
  booktitle    = {{Fifth International Symposium on Instrumentation and Control Technology}},
  editor       = {{Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Imprint structured organic thin film transistors as driving circuit in single-use sensor applications}}},
  doi          = {{10.1117/12.521463}},
  year         = {{2004}},
}

@inproceedings{39873,
  author       = {{Otterbach, Ralf and Hilleringmann, Ulrich}},
  booktitle    = {{Fifth International Symposium on Instrumentation and Control Technology}},
  editor       = {{Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Piezoresistive pressure sensors in CVD diamond for high-temperature applications}}},
  doi          = {{10.1117/12.521928}},
  year         = {{2004}},
}

@inproceedings{39887,
  author       = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Masking and etching of silicon and related materials for geometries down to 25 nm}}},
  doi          = {{10.1109/iecon.1999.822171}},
  year         = {{2003}},
}

@inproceedings{39888,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Matching analysis of NMOS-transistors with a channel length down to 30 nm}}},
  doi          = {{10.1109/iecon.1999.822163}},
  year         = {{2003}},
}

@inproceedings{39885,
  author       = {{Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Negative differential resistance in ultrashort bulk MOSFETs}}},
  doi          = {{10.1109/iecon.1999.822164}},
  year         = {{2003}},
}

@article{39851,
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  pages        = {{845--852}},
  publisher    = {{Elsevier BV}},
  title        = {{{Nanometer scale organic thin film transistors with Pentacene}}},
  doi          = {{10.1016/s0167-9317(03)00146-1}},
  volume       = {{67-68}},
  year         = {{2003}},
}

@article{39904,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE Transactions on Electron Devices}},
  keywords     = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}},
  number       = {{5}},
  pages        = {{841--846}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}}},
  doi          = {{10.1109/16.381978}},
  volume       = {{42}},
  year         = {{2002}},
}

@article{39912,
  author       = {{Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{363--366}},
  publisher    = {{Elsevier BV}},
  title        = {{{Characterization of submicron NMOS devices due to visible light emission}}},
  doi          = {{10.1016/0167-9317(93)90092-j}},
  volume       = {{21}},
  year         = {{2002}},
}

@article{39914,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{211--214}},
  publisher    = {{Elsevier BV}},
  title        = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}},
  doi          = {{10.1016/0167-9317(92)90425-q}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39906,
  author       = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0018-9200}},
  journal      = {{IEEE Journal of Solid-State Circuits}},
  keywords     = {{Electrical and Electronic Engineering}},
  number       = {{8}},
  pages        = {{1006--1010}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{System integration of optical devices and analog CMOS amplifiers}}},
  doi          = {{10.1109/4.297714}},
  volume       = {{29}},
  year         = {{2002}},
}

@article{39907,
  author       = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0018-9200}},
  journal      = {{IEEE Journal of Solid-State Circuits}},
  keywords     = {{Electrical and Electronic Engineering}},
  number       = {{8}},
  pages        = {{1006--1010}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{System integration of optical devices and analog CMOS amplifiers}}},
  doi          = {{10.1109/4.297714}},
  volume       = {{29}},
  year         = {{2002}},
}

@article{39899,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{431--434}},
  publisher    = {{Elsevier BV}},
  title        = {{{Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}}},
  doi          = {{10.1016/0167-9317(95)00280-4}},
  volume       = {{30}},
  year         = {{2002}},
}

@article{39925,
  author       = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}},
  issn         = {{0272-1732}},
  journal      = {{IEEE Micro}},
  keywords     = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}},
  number       = {{6}},
  pages        = {{28--44}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{VLSI technologies for artificial neural networks}}},
  doi          = {{10.1109/40.42985}},
  volume       = {{9}},
  year         = {{2002}},
}

@article{39882,
  author       = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{525--528}},
  publisher    = {{Elsevier BV}},
  title        = {{{A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}}},
  doi          = {{10.1016/s0167-9317(00)00370-1}},
  volume       = {{53}},
  year         = {{2002}},
}

@article{39879,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{213--216}},
  publisher    = {{Elsevier BV}},
  title        = {{{1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}},
  doi          = {{10.1016/s0167-9317(00)00299-9}},
  volume       = {{53}},
  year         = {{2002}},
}

@inproceedings{39880,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}},
  publisher    = {{IEEE}},
  title        = {{{Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}},
  doi          = {{10.1109/iecon.2000.972560}},
  year         = {{2002}},
}

@inproceedings{39881,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}},
  publisher    = {{IEEE}},
  title        = {{{Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}},
  doi          = {{10.1109/iecon.2000.972560}},
  year         = {{2002}},
}