[{"department":[{"_id":"59"}],"type":"journal_article","date_created":"2023-01-24T12:08:49Z","citation":{"ama":"Wiegand C, Hangmann C, Hedayat C, Hilleringmann U. A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS. <i>Smart System Integration SSI 2010</i>. Published online 2010.","short":"C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, Smart System Integration SSI 2010 (2010).","chicago":"Wiegand, C, C Hangmann, C Hedayat, and Ulrich Hilleringmann. “A Resonance PLL-Based Tracking System for Capacitive Sensors-MEMS/NEMS.” <i>Smart System Integration SSI 2010</i>, 2010.","bibtex":"@article{Wiegand_Hangmann_Hedayat_Hilleringmann_2010, title={A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS}, journal={Smart System Integration SSI 2010}, author={Wiegand, C and Hangmann, C and Hedayat, C and Hilleringmann, Ulrich}, year={2010} }","mla":"Wiegand, C., et al. “A Resonance PLL-Based Tracking System for Capacitive Sensors-MEMS/NEMS.” <i>Smart System Integration SSI 2010</i>, 2010.","apa":"Wiegand, C., Hangmann, C., Hedayat, C., &#38; Hilleringmann, U. (2010). A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS. <i>Smart System Integration SSI 2010</i>.","ieee":"C. Wiegand, C. Hangmann, C. Hedayat, and U. Hilleringmann, “A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS,” <i>Smart System Integration SSI 2010</i>, 2010."},"publication":"Smart System Integration SSI 2010","user_id":"20179","language":[{"iso":"eng"}],"_id":"39544","date_updated":"2023-03-22T10:18:56Z","author":[{"full_name":"Wiegand, C","last_name":"Wiegand","first_name":"C"},{"first_name":"C","last_name":"Hangmann","full_name":"Hangmann, C"},{"full_name":"Hedayat, C","first_name":"C","last_name":"Hedayat"},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"year":"2010","status":"public","title":"A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS"},{"status":"public","volume":6,"user_id":"20179","publisher":"Copernicus GmbH","_id":"39558","page":"139-143","citation":{"apa":"Wiegand, C., Fischer, C., Kazemzadeh, R., Hedayat, C., John, W., &#38; Hilleringmann, U. (2010). Macro-modelling via radial basis functionen nets. <i>Advances in Radio Science</i>, <i>6</i>, 139–143. <a href=\"https://doi.org/10.5194/ars-6-139-2008\">https://doi.org/10.5194/ars-6-139-2008</a>","ieee":"C. Wiegand, C. Fischer, R. Kazemzadeh, C. Hedayat, W. John, and U. Hilleringmann, “Macro-modelling via radial basis functionen nets,” <i>Advances in Radio Science</i>, vol. 6, pp. 139–143, 2010, doi: <a href=\"https://doi.org/10.5194/ars-6-139-2008\">10.5194/ars-6-139-2008</a>.","short":"C. Wiegand, C. Fischer, R. Kazemzadeh, C. Hedayat, W. John, U. Hilleringmann, Advances in Radio Science 6 (2010) 139–143.","chicago":"Wiegand, C., C. Fischer, R. Kazemzadeh, C. Hedayat, W. John, and Ulrich Hilleringmann. “Macro-Modelling via Radial Basis Functionen Nets.” <i>Advances in Radio Science</i> 6 (2010): 139–43. <a href=\"https://doi.org/10.5194/ars-6-139-2008\">https://doi.org/10.5194/ars-6-139-2008</a>.","mla":"Wiegand, C., et al. “Macro-Modelling via Radial Basis Functionen Nets.” <i>Advances in Radio Science</i>, vol. 6, Copernicus GmbH, 2010, pp. 139–43, doi:<a href=\"https://doi.org/10.5194/ars-6-139-2008\">10.5194/ars-6-139-2008</a>.","ama":"Wiegand C, Fischer C, Kazemzadeh R, Hedayat C, John W, Hilleringmann U. Macro-modelling via radial basis functionen nets. <i>Advances in Radio Science</i>. 2010;6:139-143. doi:<a href=\"https://doi.org/10.5194/ars-6-139-2008\">10.5194/ars-6-139-2008</a>","bibtex":"@article{Wiegand_Fischer_Kazemzadeh_Hedayat_John_Hilleringmann_2010, title={Macro-modelling via radial basis functionen nets}, volume={6}, DOI={<a href=\"https://doi.org/10.5194/ars-6-139-2008\">10.5194/ars-6-139-2008</a>}, journal={Advances in Radio Science}, publisher={Copernicus GmbH}, author={Wiegand, C. and Fischer, C. and Kazemzadeh, R. and Hedayat, C. and John, W. and Hilleringmann, Ulrich}, year={2010}, pages={139–143} }"},"intvolume":"         6","publication_status":"published","date_updated":"2023-03-22T10:32:22Z","publication_identifier":{"issn":["1684-9973"]},"author":[{"last_name":"Wiegand","first_name":"C.","full_name":"Wiegand, C."},{"full_name":"Fischer, C.","last_name":"Fischer","first_name":"C."},{"last_name":"Kazemzadeh","first_name":"R.","full_name":"Kazemzadeh, R."},{"first_name":"C.","last_name":"Hedayat","full_name":"Hedayat, C."},{"full_name":"John, W.","first_name":"W.","last_name":"John"},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"}],"title":"Macro-modelling via radial basis functionen nets","year":"2010","doi":"10.5194/ars-6-139-2008","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"<jats:p>Abstract. By the rising complexity and miniaturisation of the device's dimensions, the density of the conductors increases considerably. Referring to this, locally transient interactions between single physical values become apparent. Therefore, for the investigation and optimisation of integrated circuits it is essential to develop suitable models and simulation surroundings which allow for memory and time-efficient calculation of the behaviour. By means of the dynamic reconstruction theory and the radial basis functions nets the so-called black box models are provided. The description of black box models is derived from the input and output behaviour or so-called time series of a dynamic system. Concerning the time series, the black box model adapts its parameters via the extended Kalman filter. This paper provides a modelling approach that enables fast and efficient simulations.\r\n                    </jats:p>"}],"publication":"Advances in Radio Science","department":[{"_id":"59"}],"type":"journal_article","date_created":"2023-01-24T12:14:16Z"},{"publication":"IEEE Sensors Journal","issue":"11","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Instrumentation"],"type":"journal_article","date_created":"2023-01-24T12:09:44Z","intvolume":"         9","date_updated":"2023-03-21T10:14:08Z","publication_status":"published","publication_identifier":{"issn":["1530-437X","1558-1748"]},"author":[{"first_name":"Thomas","last_name":"Becker","full_name":"Becker, Thomas"},{"last_name":"Kluge","first_name":"Martin","full_name":"Kluge, Martin"},{"full_name":"Schalk, Josef","first_name":"Josef","last_name":"Schalk"},{"first_name":"Keith","last_name":"Tiplady","full_name":"Tiplady, Keith"},{"first_name":"Christophe","last_name":"Paget","full_name":"Paget, Christophe"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"full_name":"Otterpohl, Tobias","first_name":"Tobias","last_name":"Otterpohl"}],"title":"Autonomous Sensor Nodes for Aircraft Structural Health Monitoring","year":"2009","doi":"10.1109/jsen.2009.2028775","language":[{"iso":"eng"}],"citation":{"ieee":"T. Becker <i>et al.</i>, “Autonomous Sensor Nodes for Aircraft Structural Health Monitoring,” <i>IEEE Sensors Journal</i>, vol. 9, no. 11, pp. 1589–1595, 2009, doi: <a href=\"https://doi.org/10.1109/jsen.2009.2028775\">10.1109/jsen.2009.2028775</a>.","apa":"Becker, T., Kluge, M., Schalk, J., Tiplady, K., Paget, C., Hilleringmann, U., &#38; Otterpohl, T. (2009). Autonomous Sensor Nodes for Aircraft Structural Health Monitoring. <i>IEEE Sensors Journal</i>, <i>9</i>(11), 1589–1595. <a href=\"https://doi.org/10.1109/jsen.2009.2028775\">https://doi.org/10.1109/jsen.2009.2028775</a>","short":"T. Becker, M. Kluge, J. Schalk, K. Tiplady, C. Paget, U. Hilleringmann, T. Otterpohl, IEEE Sensors Journal 9 (2009) 1589–1595.","chicago":"Becker, Thomas, Martin Kluge, Josef Schalk, Keith Tiplady, Christophe Paget, Ulrich Hilleringmann, and Tobias Otterpohl. “Autonomous Sensor Nodes for Aircraft Structural Health Monitoring.” <i>IEEE Sensors Journal</i> 9, no. 11 (2009): 1589–95. <a href=\"https://doi.org/10.1109/jsen.2009.2028775\">https://doi.org/10.1109/jsen.2009.2028775</a>.","mla":"Becker, Thomas, et al. “Autonomous Sensor Nodes for Aircraft Structural Health Monitoring.” <i>IEEE Sensors Journal</i>, vol. 9, no. 11, Institute of Electrical and Electronics Engineers (IEEE), 2009, pp. 1589–95, doi:<a href=\"https://doi.org/10.1109/jsen.2009.2028775\">10.1109/jsen.2009.2028775</a>.","bibtex":"@article{Becker_Kluge_Schalk_Tiplady_Paget_Hilleringmann_Otterpohl_2009, title={Autonomous Sensor Nodes for Aircraft Structural Health Monitoring}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/jsen.2009.2028775\">10.1109/jsen.2009.2028775</a>}, number={11}, journal={IEEE Sensors Journal}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Becker, Thomas and Kluge, Martin and Schalk, Josef and Tiplady, Keith and Paget, Christophe and Hilleringmann, Ulrich and Otterpohl, Tobias}, year={2009}, pages={1589–1595} }","ama":"Becker T, Kluge M, Schalk J, et al. Autonomous Sensor Nodes for Aircraft Structural Health Monitoring. <i>IEEE Sensors Journal</i>. 2009;9(11):1589-1595. doi:<a href=\"https://doi.org/10.1109/jsen.2009.2028775\">10.1109/jsen.2009.2028775</a>"},"status":"public","volume":9,"user_id":"20179","_id":"39547","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","page":"1589-1595"},{"citation":{"bibtex":"@article{Reinhold_Scholz_John_Hilleringmann_2009, title={Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand}, volume={2}, DOI={<a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">10.4304/jcm.2.6.14-23</a>}, number={6}, journal={Journal of Communications}, publisher={Academy Publisher}, author={Reinhold, Christian and Scholz, Peter and John, Werner and Hilleringmann, Ulrich}, year={2009} }","ama":"Reinhold C, Scholz P, John W, Hilleringmann U. Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand. <i>Journal of Communications</i>. 2009;2(6). doi:<a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">10.4304/jcm.2.6.14-23</a>","mla":"Reinhold, Christian, et al. “Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand.” <i>Journal of Communications</i>, vol. 2, no. 6, Academy Publisher, 2009, doi:<a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">10.4304/jcm.2.6.14-23</a>.","chicago":"Reinhold, Christian, Peter Scholz, Werner John, and Ulrich Hilleringmann. “Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand.” <i>Journal of Communications</i> 2, no. 6 (2009). <a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">https://doi.org/10.4304/jcm.2.6.14-23</a>.","short":"C. Reinhold, P. Scholz, W. John, U. Hilleringmann, Journal of Communications 2 (2009).","ieee":"C. Reinhold, P. Scholz, W. John, and U. Hilleringmann, “Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand,” <i>Journal of Communications</i>, vol. 2, no. 6, 2009, doi: <a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">10.4304/jcm.2.6.14-23</a>.","apa":"Reinhold, C., Scholz, P., John, W., &#38; Hilleringmann, U. (2009). Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand. <i>Journal of Communications</i>, <i>2</i>(6). <a href=\"https://doi.org/10.4304/jcm.2.6.14-23\">https://doi.org/10.4304/jcm.2.6.14-23</a>"},"_id":"39559","publisher":"Academy Publisher","volume":2,"user_id":"20179","status":"public","date_created":"2023-01-24T12:14:47Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering"],"type":"journal_article","issue":"6","publication":"Journal of Communications","language":[{"iso":"eng"}],"doi":"10.4304/jcm.2.6.14-23","publication_identifier":{"issn":["1796-2021"]},"author":[{"full_name":"Reinhold, Christian","last_name":"Reinhold","first_name":"Christian"},{"full_name":"Scholz, Peter","first_name":"Peter","last_name":"Scholz"},{"last_name":"John","first_name":"Werner","full_name":"John, Werner"},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"}],"year":"2009","title":"Efficient Antenna Design of Inductive Coupled RFID-Systems with High Power Demand","intvolume":"         2","date_updated":"2023-03-21T10:13:10Z","publication_status":"published"},{"user_id":"20179","doi":"10.1109/essderc.2009.5331373","language":[{"iso":"eng"}],"_id":"39548","publisher":"IEEE","publication_status":"published","date_updated":"2023-03-21T10:14:23Z","year":"2009","status":"public","title":"N-type single nanoparticle ZnO transistors processed at low temperature","author":[{"last_name":"Wolff","first_name":"Karsten","full_name":"Wolff, Karsten"},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"}],"type":"conference","department":[{"_id":"59"}],"date_created":"2023-01-24T12:10:08Z","publication":"2009 Proceedings of the European Solid State Device Research Conference","citation":{"apa":"Wolff, K., &#38; Hilleringmann, U. (2009). N-type single nanoparticle ZnO transistors processed at low temperature. <i>2009 Proceedings of the European Solid State Device Research Conference</i>. <a href=\"https://doi.org/10.1109/essderc.2009.5331373\">https://doi.org/10.1109/essderc.2009.5331373</a>","ieee":"K. Wolff and U. Hilleringmann, “N-type single nanoparticle ZnO transistors processed at low temperature,” 2009, doi: <a href=\"https://doi.org/10.1109/essderc.2009.5331373\">10.1109/essderc.2009.5331373</a>.","short":"K. Wolff, U. Hilleringmann, in: 2009 Proceedings of the European Solid State Device Research Conference, IEEE, 2009.","chicago":"Wolff, Karsten, and Ulrich Hilleringmann. “N-Type Single Nanoparticle ZnO Transistors Processed at Low Temperature.” In <i>2009 Proceedings of the European Solid State Device Research Conference</i>. IEEE, 2009. <a href=\"https://doi.org/10.1109/essderc.2009.5331373\">https://doi.org/10.1109/essderc.2009.5331373</a>.","mla":"Wolff, Karsten, and Ulrich Hilleringmann. “N-Type Single Nanoparticle ZnO Transistors Processed at Low Temperature.” <i>2009 Proceedings of the European Solid State Device Research Conference</i>, IEEE, 2009, doi:<a href=\"https://doi.org/10.1109/essderc.2009.5331373\">10.1109/essderc.2009.5331373</a>.","ama":"Wolff K, Hilleringmann U. N-type single nanoparticle ZnO transistors processed at low temperature. In: <i>2009 Proceedings of the European Solid State Device Research Conference</i>. IEEE; 2009. doi:<a href=\"https://doi.org/10.1109/essderc.2009.5331373\">10.1109/essderc.2009.5331373</a>","bibtex":"@inproceedings{Wolff_Hilleringmann_2009, title={N-type single nanoparticle ZnO transistors processed at low temperature}, DOI={<a href=\"https://doi.org/10.1109/essderc.2009.5331373\">10.1109/essderc.2009.5331373</a>}, booktitle={2009 Proceedings of the European Solid State Device Research Conference}, publisher={IEEE}, author={Wolff, Karsten and Hilleringmann, Ulrich}, year={2009} }"}},{"user_id":"20179","language":[{"iso":"eng"}],"_id":"39552","date_updated":"2023-03-21T10:14:36Z","author":[{"full_name":"Wiegand, C","last_name":"Wiegand","first_name":"C"},{"full_name":"Hedayat, C","first_name":"C","last_name":"Hedayat"},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"}],"title":"Lock Detection for Charge-Pump Phase-Locked Loops","status":"public","year":"2009","department":[{"_id":"59"}],"type":"journal_article","date_created":"2023-01-24T12:11:38Z","citation":{"ieee":"C. Wiegand, C. Hedayat, and U. Hilleringmann, “Lock Detection for Charge-Pump Phase-Locked Loops,” <i>Sophia Antipolis Microelectronics SAME</i>, 2009.","mla":"Wiegand, C., et al. “Lock Detection for Charge-Pump Phase-Locked Loops.” <i>Sophia Antipolis Microelectronics SAME</i>, 2009.","apa":"Wiegand, C., Hedayat, C., &#38; Hilleringmann, U. (2009). Lock Detection for Charge-Pump Phase-Locked Loops. <i>Sophia Antipolis Microelectronics SAME</i>.","bibtex":"@article{Wiegand_Hedayat_Hilleringmann_2009, title={Lock Detection for Charge-Pump Phase-Locked Loops}, journal={Sophia Antipolis Microelectronics SAME}, author={Wiegand, C and Hedayat, C and Hilleringmann, Ulrich}, year={2009} }","chicago":"Wiegand, C, C Hedayat, and Ulrich Hilleringmann. “Lock Detection for Charge-Pump Phase-Locked Loops.” <i>Sophia Antipolis Microelectronics SAME</i>, 2009.","short":"C. Wiegand, C. Hedayat, U. Hilleringmann, Sophia Antipolis Microelectronics SAME (2009).","ama":"Wiegand C, Hedayat C, Hilleringmann U. Lock Detection for Charge-Pump Phase-Locked Loops. <i>Sophia Antipolis Microelectronics SAME</i>. Published online 2009."},"publication":"Sophia Antipolis Microelectronics SAME"},{"title":"Dielectric layers for organic field effect transistors as gate dielectric and surface passivation","year":"2008","author":[{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"full_name":"Pannemann, C.","first_name":"C.","last_name":"Pannemann"},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["1862-6300","1862-6319"]},"date_updated":"2023-03-21T09:38:46Z","publication_status":"published","intvolume":"       205","language":[{"iso":"eng"}],"doi":"10.1002/pssa.200723406","issue":"3","publication":"physica status solidi (a)","date_created":"2023-01-24T12:13:48Z","type":"journal_article","keyword":["Materials Chemistry","Electrical and Electronic Engineering","Surfaces","Coatings and Films","Surfaces and Interfaces","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"status":"public","page":"564-577","_id":"39556","publisher":"Wiley","user_id":"20179","volume":205,"citation":{"ieee":"T. Diekmann, C. Pannemann, and U. Hilleringmann, “Dielectric layers for organic field effect transistors as gate dielectric and surface passivation,” <i>physica status solidi (a)</i>, vol. 205, no. 3, pp. 564–577, 2008, doi: <a href=\"https://doi.org/10.1002/pssa.200723406\">10.1002/pssa.200723406</a>.","apa":"Diekmann, T., Pannemann, C., &#38; Hilleringmann, U. (2008). Dielectric layers for organic field effect transistors as gate dielectric and surface passivation. <i>Physica Status Solidi (a)</i>, <i>205</i>(3), 564–577. <a href=\"https://doi.org/10.1002/pssa.200723406\">https://doi.org/10.1002/pssa.200723406</a>","short":"T. Diekmann, C. Pannemann, U. Hilleringmann, Physica Status Solidi (a) 205 (2008) 564–577.","chicago":"Diekmann, T., C. Pannemann, and Ulrich Hilleringmann. “Dielectric Layers for Organic Field Effect Transistors as Gate Dielectric and Surface Passivation.” <i>Physica Status Solidi (a)</i> 205, no. 3 (2008): 564–77. <a href=\"https://doi.org/10.1002/pssa.200723406\">https://doi.org/10.1002/pssa.200723406</a>.","mla":"Diekmann, T., et al. “Dielectric Layers for Organic Field Effect Transistors as Gate Dielectric and Surface Passivation.” <i>Physica Status Solidi (a)</i>, vol. 205, no. 3, Wiley, 2008, pp. 564–77, doi:<a href=\"https://doi.org/10.1002/pssa.200723406\">10.1002/pssa.200723406</a>.","bibtex":"@article{Diekmann_Pannemann_Hilleringmann_2008, title={Dielectric layers for organic field effect transistors as gate dielectric and surface passivation}, volume={205}, DOI={<a href=\"https://doi.org/10.1002/pssa.200723406\">10.1002/pssa.200723406</a>}, number={3}, journal={physica status solidi (a)}, publisher={Wiley}, author={Diekmann, T. and Pannemann, C. and Hilleringmann, Ulrich}, year={2008}, pages={564–577} }","ama":"Diekmann T, Pannemann C, Hilleringmann U. Dielectric layers for organic field effect transistors as gate dielectric and surface passivation. <i>physica status solidi (a)</i>. 2008;205(3):564-577. doi:<a href=\"https://doi.org/10.1002/pssa.200723406\">10.1002/pssa.200723406</a>"}},{"publication":"2007 18th International Zurich Symposium on Electromagnetic Compatibility","citation":{"short":"M. Taki, W. John, C. Hedayat, U. Hilleringmann, in: 2007 18th International Zurich Symposium on Electromagnetic Compatibility, IEEE, 2008.","chicago":"Taki, M., W. John, C. Hedayat, and Ulrich Hilleringmann. “Noise Propagation for Induced Fast Transient Impulses on PCB-Level.” In <i>2007 18th International Zurich Symposium on Electromagnetic Compatibility</i>. IEEE, 2008. <a href=\"https://doi.org/10.1109/emczur.2007.4388195\">https://doi.org/10.1109/emczur.2007.4388195</a>.","ieee":"M. Taki, W. John, C. Hedayat, and U. Hilleringmann, “Noise propagation for induced fast transient impulses on PCB-level,” 2008, doi: <a href=\"https://doi.org/10.1109/emczur.2007.4388195\">10.1109/emczur.2007.4388195</a>.","apa":"Taki, M., John, W., Hedayat, C., &#38; Hilleringmann, U. (2008). Noise propagation for induced fast transient impulses on PCB-level. <i>2007 18th International Zurich Symposium on Electromagnetic Compatibility</i>. <a href=\"https://doi.org/10.1109/emczur.2007.4388195\">https://doi.org/10.1109/emczur.2007.4388195</a>","bibtex":"@inproceedings{Taki_John_Hedayat_Hilleringmann_2008, title={Noise propagation for induced fast transient impulses on PCB-level}, DOI={<a href=\"https://doi.org/10.1109/emczur.2007.4388195\">10.1109/emczur.2007.4388195</a>}, booktitle={2007 18th International Zurich Symposium on Electromagnetic Compatibility}, publisher={IEEE}, author={Taki, M. and John, W. and Hedayat, C. and Hilleringmann, Ulrich}, year={2008} }","ama":"Taki M, John W, Hedayat C, Hilleringmann U. Noise propagation for induced fast transient impulses on PCB-level. In: <i>2007 18th International Zurich Symposium on Electromagnetic Compatibility</i>. 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Faupel, in: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE, 2006."},"publication":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","department":[{"_id":"59"}],"type":"conference","date_created":"2023-01-25T08:35:55Z","date_updated":"2023-03-22T10:35:28Z","publication_status":"published","author":[{"full_name":"Pannemann, C.","first_name":"C.","last_name":"Pannemann"},{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Schurmann, U.","first_name":"U.","last_name":"Schurmann"},{"last_name":"Scharnberg","first_name":"M.","full_name":"Scharnberg, M."},{"full_name":"Zaporojtchenko, V.","first_name":"V.","last_name":"Zaporojtchenko"},{"first_name":"R.","last_name":"Adelung","full_name":"Adelung, R."},{"first_name":"F.","last_name":"Faupel","full_name":"Faupel, F."}],"title":"Encapsulating the active Layer of organic Thin-Film Transistors","year":"2006","status":"public","doi":"10.1109/polytr.2005.1596488","user_id":"20179","publisher":"IEEE","_id":"39842","language":[{"iso":"eng"}]},{"publisher":"Springer Science and Business Media LLC","_id":"39846","page":"1999-2002","volume":19,"user_id":"20179","status":"public","citation":{"chicago":"Pannemann, Ch., T. 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Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002. doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>."},"language":[{"iso":"eng"}],"doi":"10.1557/jmr.2004.0267","author":[{"last_name":"Pannemann","first_name":"Ch.","full_name":"Pannemann, Ch."},{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"}],"publication_identifier":{"issn":["0884-2914","2044-5326"]},"title":"Degradation of organic field-effect transistors made of pentacene","year":"2005","intvolume":"        19","publication_status":"published","date_updated":"2023-03-21T10:06:18Z","date_created":"2023-01-25T08:37:47Z","department":[{"_id":"59"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"type":"journal_article","publication":"Journal of Materials Research","issue":"7","abstract":[{"text":"<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>","lang":"eng"}]},{"date_updated":"2023-03-22T10:36:03Z","publication_status":"published","author":[{"last_name":"Pannemann","first_name":"Ch.","full_name":"Pannemann, Ch."},{"full_name":"Diekmann, T.","last_name":"Diekmann","first_name":"T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"title":"On the degradation of organic field-effect transistors","status":"public","year":"2005","doi":"10.1109/icm.2004.1434210","user_id":"20179","publisher":"IEEE","_id":"39848","language":[{"iso":"eng"}],"citation":{"short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005.","chicago":"Pannemann, Ch., T. 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Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>","lang":"eng"}],"publication":"Journal of Materials Research","issue":"7","keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-24T09:24:41Z"},{"language":[{"iso":"eng"}],"article_number":"024104","doi":"10.1063/1.1849845","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Scharnberg","first_name":"M.","full_name":"Scharnberg, M."},{"first_name":"J.","last_name":"Hu","full_name":"Hu, J."},{"full_name":"Kanzow, J.","last_name":"Kanzow","first_name":"J."},{"full_name":"Rätzke, K.","first_name":"K.","last_name":"Rätzke"},{"full_name":"Adelung, R.","last_name":"Adelung","first_name":"R."},{"full_name":"Faupel, F.","first_name":"F.","last_name":"Faupel"},{"full_name":"Pannemann, C.","first_name":"C.","last_name":"Pannemann"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Meyer, S.","last_name":"Meyer","first_name":"S."},{"first_name":"J.","last_name":"Pflaum","full_name":"Pflaum, J."}],"year":"2005","title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","intvolume":"        86","date_updated":"2023-03-22T10:34:05Z","publication_status":"published","date_created":"2023-01-24T12:21:59Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"publication":"Applied Physics Letters","issue":"2","publisher":"AIP Publishing","_id":"39574","volume":86,"user_id":"20179","status":"public","citation":{"mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>. 2005;86(2). doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>","ieee":"M. Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104. <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>","short":"M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>."}}]