[{"type":"journal_article","publication":"Microelectronic Engineering","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39919","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>"},"page":"289-292","intvolume":"        15","year":"2002","date_created":"2023-01-25T09:29:32Z","author":[{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"full_name":"Knospe, K.","last_name":"Knospe","first_name":"K."},{"first_name":"C.","last_name":"Heite","full_name":"Heite, C."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":15,"date_updated":"2023-03-22T10:29:08Z","publisher":"Elsevier BV","doi":"10.1016/0167-9317(91)90231-2","title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits"},{"issue":"6","publication_status":"published","publication_identifier":{"issn":["0272-1732"]},"citation":{"ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>.","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }"},"intvolume":"         9","page":"28-44","year":"2002","date_created":"2023-01-25T09:33:50Z","author":[{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"U.","full_name":"Rueckert, U.","last_name":"Rueckert"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"volume":9,"date_updated":"2023-03-22T10:36:45Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","doi":"10.1109/40.42985","title":"VLSI technologies for artificial neural networks","type":"journal_article","publication":"IEEE Micro","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39926","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"]},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39892","language":[{"iso":"eng"}],"type":"conference","publication":"IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)","status":"public","author":[{"full_name":"Blum, F.","last_name":"Blum","first_name":"F."},{"full_name":"Denisenko, A.","last_name":"Denisenko","first_name":"A."},{"first_name":"R.","full_name":"Job, R.","last_name":"Job"},{"last_name":"Borchert","full_name":"Borchert, D.","first_name":"D."},{"full_name":"Weber, W.","last_name":"Weber","first_name":"W."},{"last_name":"Borany","full_name":"Borany, J.V.","first_name":"J.V."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"W.R.","last_name":"Fahrner","full_name":"Fahrner, W.R."}],"date_created":"2023-01-25T09:15:11Z","date_updated":"2023-03-22T10:38:37Z","publisher":"IEEE","doi":"10.1109/iecon.1998.724097","title":"Nuclear radiation detectors on various type diamonds","publication_status":"published","citation":{"apa":"Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann, U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds. <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>","short":"F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann, W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.","bibtex":"@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002, title={Nuclear radiation detectors on various type diamonds}, DOI={<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>}, booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }","mla":"Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","ama":"Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>","ieee":"F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","chicago":"Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>."},"year":"2002"},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39920","status":"public","publication":"Microelectronic Engineering","type":"journal_article","doi":"10.1016/0167-9317(91)90299-s","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","volume":15,"author":[{"full_name":"Soennecken, A.","last_name":"Soennecken","first_name":"A."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:29:53Z","date_updated":"2023-03-21T09:47:17Z","publisher":"Elsevier BV","intvolume":"        15","page":"633-636","citation":{"bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>."},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published"},{"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39915","department":[{"_id":"59"}],"user_id":"20179","status":"public","publication":"Microelectronic Engineering","type":"journal_article","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","doi":"10.1016/0167-9317(92)90425-q","date_updated":"2023-03-21T09:49:09Z","publisher":"Elsevier BV","volume":19,"author":[{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_created":"2023-01-25T09:27:51Z","year":"2002","page":"211-214","intvolume":"        19","citation":{"apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>."},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4"},{"status":"public","publication":"Microelectronic Engineering","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39916","department":[{"_id":"59"}],"user_id":"20179","year":"2002","page":"191-194","intvolume":"        19","citation":{"mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>.","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","title":"CMOS compatible micromachining by dry silicon-etching techniques","doi":"10.1016/0167-9317(92)90420-v","publisher":"Elsevier BV","date_updated":"2023-03-21T09:48:55Z","volume":19,"date_created":"2023-01-25T09:28:16Z","author":[{"full_name":"Adams, S.","last_name":"Adams","first_name":"S."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}]},{"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39348","user_id":"20179","department":[{"_id":"59"}],"status":"public","type":"journal_article","publication":"IEEE Transactions on Electron Devices","title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:45:40Z","date_created":"2023-01-24T09:23:56Z","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"volume":45,"year":"2002","citation":{"short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>"},"page":"299-306","intvolume":"        45","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"1"},{"title":"Applications and implementations of neural networks in microelectronics-overview and status","doi":"10.1109/cmpeur.1991.257442","publisher":"IEEE Comput. Soc. Press","date_updated":"2023-03-21T09:46:40Z","author":[{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"full_name":"Rueckert, U.","last_name":"Rueckert","first_name":"U."}],"date_created":"2023-01-25T09:31:42Z","year":"2002","citation":{"apa":"Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations of neural networks in microelectronics-overview and status. <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>","bibtex":"@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and implementations of neural networks in microelectronics-overview and status}, DOI={<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>}, booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }","mla":"Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","short":"K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002.","ama":"Goser K, Hilleringmann U, Rueckert U. Applications and implementations of neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press; 2002. doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>","ieee":"K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations of neural networks in microelectronics-overview and status,” 2002, doi: <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","chicago":"Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press, 2002. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>."},"publication_status":"published","language":[{"iso":"eng"}],"_id":"39923","user_id":"20179","department":[{"_id":"59"}],"status":"public","type":"conference","publication":"[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications"},{"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","title":"12 kV low current cascaded light triggered switch on one silicon chip","publisher":"Elsevier BV","date_created":"2023-01-25T09:13:17Z","year":"2002","issue":"1-4","_id":"39889","user_id":"20179","department":[{"_id":"59"}],"status":"public","type":"journal_article","doi":"10.1016/s0167-9317(99)00122-7","date_updated":"2023-03-21T09:58:35Z","author":[{"full_name":"Mankowski, V.","last_name":"Mankowski","first_name":"V."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"volume":46,"citation":{"ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>"},"page":"413-417","intvolume":"        46","publication_status":"published","publication_identifier":{"issn":["0167-9317"]}},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39891","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.F.","first_name":"K.F."}],"date_created":"2023-01-25T09:14:43Z","volume":45,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:58:01Z","doi":"10.1109/16.658845","title":"Matching analysis of deposition defined 50-nm MOSFET's","issue":"1","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"citation":{"mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>"},"page":"299-306","intvolume":"        45","year":"2002"},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39886","language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"Solid-State Electronics","status":"public","author":[{"first_name":"G","full_name":"Wirth, G","last_name":"Wirth"},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"J.T","last_name":"Horstmann","full_name":"Horstmann, J.T"},{"last_name":"Goser","full_name":"Goser, K","first_name":"K"}],"date_created":"2023-01-25T09:11:50Z","volume":43,"date_updated":"2023-03-21T09:59:22Z","publisher":"Elsevier BV","doi":"10.1016/s0038-1101(99)00060-x","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","issue":"7","publication_status":"published","publication_identifier":{"issn":["0038-1101"]},"citation":{"ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>."},"page":"1245-1250","intvolume":"        43","year":"2002"},{"_id":"39876","department":[{"_id":"59"}],"user_id":"20179","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Diamond and Related Materials","type":"journal_article","status":"public","date_updated":"2023-03-21T10:03:16Z","publisher":"Elsevier BV","volume":10,"date_created":"2023-01-25T09:07:37Z","author":[{"full_name":"Otterbach, R.","last_name":"Otterbach","first_name":"R."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"T.J.","full_name":"Horstmann, T.J.","last_name":"Horstmann"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"title":"Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications","doi":"10.1016/s0925-9635(01)00373-9","publication_identifier":{"issn":["0925-9635"]},"publication_status":"published","issue":"3-7","year":"2002","intvolume":"        10","page":"511-514","citation":{"apa":"Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>","short":"R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.","mla":"Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","bibtex":"@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }","ama":"Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>","ieee":"R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","chicago":"Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>."}},{"citation":{"apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>."},"intvolume":"        53","page":"569-572","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/s0167-9317(00)00380-4","title":"A structure definition technique for 25 nm lines of silicon and related materials","author":[{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"first_name":"T.","last_name":"Vieregge","full_name":"Vieregge, T."},{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."}],"date_created":"2023-01-25T09:08:13Z","volume":53,"date_updated":"2023-03-21T10:03:00Z","publisher":"Elsevier BV","status":"public","type":"journal_article","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39877"},{"issue":"3-6","year":"2002","publisher":"Elsevier BV","date_created":"2023-01-25T09:05:52Z","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","publication":"Diamond and Related Materials","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0925-9635"]},"citation":{"ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>","apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844."},"page":"841-844","intvolume":"        11","date_updated":"2023-03-21T10:03:48Z","author":[{"first_name":"R.","last_name":"Otterbach","full_name":"Otterbach, R."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"volume":11,"doi":"10.1016/s0925-9635(01)00703-8","type":"journal_article","status":"public","_id":"39874","user_id":"20179","department":[{"_id":"59"}]},{"department":[{"_id":"59"}],"user_id":"20179","_id":"39875","language":[{"iso":"eng"}],"publication":"Silizium-Halbleitertechnologie","type":"book_chapter","status":"public","abstract":[{"text":"Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.","lang":"eng"}],"author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"}],"date_created":"2023-01-25T09:06:58Z","publisher":"Vieweg+Teubner Verlag","date_updated":"2023-03-21T10:03:35Z","doi":"10.1007/978-3-322-94119-0_8","title":"Metallisierung und Kontakte","publication_identifier":{"isbn":["978-3-322-94119-0"]},"page":"131–151","citation":{"mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>.","bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.","apa":"Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i> (pp. 131–151). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>","ieee":"U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.","chicago":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>, 131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>.","ama":"Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2002:131–151. doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>"},"place":"Wiesbaden","year":"2002"},{"publication":"Proceedings Micro. tec","type":"conference","status":"public","department":[{"_id":"59"}],"user_id":"20179","_id":"39884","language":[{"iso":"eng"}],"page":"49–53","citation":{"ieee":"U. Hilleringmann, T. Vieregge, and J. Horstmann, “Nanometer Scale Lateral Structures of MOS Type Layers,” in <i>Proceedings Micro. tec</i>, 2000, pp. 49–53.","chicago":"Hilleringmann, Ulrich, T Vieregge, and JT Horstmann. “Nanometer Scale Lateral Structures of MOS Type Layers.” In <i>Proceedings Micro. Tec</i>, 49–53, 2000.","ama":"Hilleringmann U, Vieregge T, Horstmann J. Nanometer Scale Lateral Structures of MOS Type Layers. In: <i>Proceedings Micro. Tec</i>. ; 2000:49–53.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. (2000). Nanometer Scale Lateral Structures of MOS Type Layers. <i>Proceedings Micro. Tec</i>, 49–53.","short":"U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53.","bibtex":"@inproceedings{Hilleringmann_Vieregge_Horstmann_2000, title={Nanometer Scale Lateral Structures of MOS Type Layers}, booktitle={Proceedings Micro. tec}, author={Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT}, year={2000}, pages={49–53} }","mla":"Hilleringmann, Ulrich, et al. “Nanometer Scale Lateral Structures of MOS Type Layers.” <i>Proceedings Micro. Tec</i>, 2000, pp. 49–53."},"year":"2000","author":[{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"first_name":"T","last_name":"Vieregge","full_name":"Vieregge, T"},{"full_name":"Horstmann, JT","last_name":"Horstmann","first_name":"JT"}],"date_created":"2023-01-25T09:10:42Z","date_updated":"2023-03-21T09:59:50Z","title":"Nanometer Scale Lateral Structures of MOS Type Layers"},{"page":"320-323","intvolume":"         1","citation":{"mla":"Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for High Temperature Pressure Sensor Applications.” <i>29th European Solid-State Device Research Conference</i>, vol. 1, 1999, pp. 320–23.","bibtex":"@inproceedings{Otterbach_Hilleringmann_1999, title={High rate CVD-diamond etching for high temperature pressure sensor applications}, volume={1}, booktitle={29th European Solid-State Device Research Conference}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={1999}, pages={320–323} }","short":"R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.","apa":"Otterbach, R., &#38; Hilleringmann, U. (1999). High rate CVD-diamond etching for high temperature pressure sensor applications. <i>29th European Solid-State Device Research Conference</i>, <i>1</i>, 320–323.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for High Temperature Pressure Sensor Applications.” In <i>29th European Solid-State Device Research Conference</i>, 1:320–23, 1999.","ieee":"R. Otterbach and U. Hilleringmann, “High rate CVD-diamond etching for high temperature pressure sensor applications,” in <i>29th European Solid-State Device Research Conference</i>, 1999, vol. 1, pp. 320–323.","ama":"Otterbach R, Hilleringmann U. High rate CVD-diamond etching for high temperature pressure sensor applications. In: <i>29th European Solid-State Device Research Conference</i>. Vol 1. ; 1999:320-323."},"year":"1999","volume":1,"date_created":"2023-01-25T09:14:01Z","author":[{"first_name":"R.","full_name":"Otterbach, R.","last_name":"Otterbach"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"}],"date_updated":"2023-03-21T09:58:19Z","title":"High rate CVD-diamond etching for high temperature pressure sensor applications","publication":"29th European Solid-State Device Research Conference","type":"conference","status":"public","department":[{"_id":"59"}],"user_id":"20179","_id":"39890","language":[{"iso":"eng"}]},{"date_created":"2023-01-25T09:15:49Z","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_updated":"2023-03-21T09:57:47Z","title":"Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors","citation":{"bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors}, booktitle={28th European Solid-State Device Research Conference}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.","mla":"Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–15.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1998). Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. <i>28th European Solid-State Device Research Conference</i>, 512–515.","ama":"Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: <i>28th European Solid-State Device Research Conference</i>. ; 1998:512-515.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” In <i>28th European Solid-State Device Research Conference</i>, 512–15, 1998.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–515."},"page":"512-515","year":"1998","user_id":"20179","department":[{"_id":"59"}],"_id":"39893","language":[{"iso":"eng"}],"type":"conference","publication":"28th European Solid-State Device Research Conference","status":"public"},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39896","language":[{"iso":"eng"}],"type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","date_created":"2023-01-25T09:17:03Z","author":[{"last_name":"Heinrich","full_name":"Heinrich, L.M.H.","first_name":"L.M.H."},{"first_name":"J.","last_name":"Muller","full_name":"Muller, J."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.F.","last_name":"Goser","full_name":"Goser, K.F."},{"first_name":"A.","last_name":"Holmes","full_name":"Holmes, A."},{"first_name":"Do-Hoon","last_name":"Hwang","full_name":"Hwang, Do-Hoon"},{"first_name":"R.","last_name":"Stern","full_name":"Stern, R."}],"volume":44,"date_updated":"2023-03-21T09:57:32Z","doi":"10.1109/16.605463","title":"CMOS-compatible organic light-emitting diodes","issue":"8","citation":{"short":"L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.","bibtex":"@article{Heinrich_Muller_Hilleringmann_Goser_Holmes_Hwang_Stern_1997, title={CMOS-compatible organic light-emitting diodes}, volume={44}, DOI={<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>}, number={8}, journal={IEEE Transactions on Electron Devices}, author={Heinrich, L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A. and Hwang, Do-Hoon and Stern, R.}, year={1997}, pages={1249–1252} }","mla":"Heinrich, L. M. H., et al. “CMOS-Compatible Organic Light-Emitting Diodes.” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, 1997, pp. 1249–52, doi:<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>.","apa":"Heinrich, L. M. H., Muller, J., Hilleringmann, U., Goser, K. F., Holmes, A., Hwang, D.-H., &#38; Stern, R. (1997). CMOS-compatible organic light-emitting diodes. <i>IEEE Transactions on Electron Devices</i>, <i>44</i>(8), 1249–1252. <a href=\"https://doi.org/10.1109/16.605463\">https://doi.org/10.1109/16.605463</a>","ama":"Heinrich LMH, Muller J, Hilleringmann U, et al. CMOS-compatible organic light-emitting diodes. <i>IEEE Transactions on Electron Devices</i>. 1997;44(8):1249-1252. doi:<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>","chicago":"Heinrich, L.M.H., J. Muller, Ulrich Hilleringmann, K.F. Goser, A. Holmes, Do-Hoon Hwang, and R. Stern. “CMOS-Compatible Organic Light-Emitting Diodes.” <i>IEEE Transactions on Electron Devices</i> 44, no. 8 (1997): 1249–52. <a href=\"https://doi.org/10.1109/16.605463\">https://doi.org/10.1109/16.605463</a>.","ieee":"L. M. H. Heinrich <i>et al.</i>, “CMOS-compatible organic light-emitting diodes,” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, pp. 1249–1252, 1997, doi: <a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>."},"page":"1249-1252","intvolume":"        44","year":"1997"},{"citation":{"apa":"Muller, J., Wirth, G., Hilleringmann, U., &#38; Goser, K. (1996). Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 947–950.","bibtex":"@inproceedings{Muller_Wirth_Hilleringmann_Goser_1996, title={Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission}, booktitle={ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference}, author={Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K.}, year={1996}, pages={947–950} }","short":"J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.","mla":"Muller, J., et al. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–50.","ieee":"J. Muller, G. Wirth, U. Hilleringmann, and K. Goser, “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission,” in <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–950.","chicago":"Muller, J., G. Wirth, Ulrich Hilleringmann, and K. Goser. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” In <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 947–50, 1996.","ama":"Muller J, Wirth G, Hilleringmann U, Goser K. Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. In: <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>. ; 1996:947-950."},"page":"947-950","year":"1996","title":"Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission","date_created":"2023-01-25T09:21:38Z","author":[{"full_name":"Muller, J.","last_name":"Muller","first_name":"J."},{"first_name":"G.","last_name":"Wirth","full_name":"Wirth, G."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_updated":"2023-03-21T09:53:14Z","status":"public","type":"conference","publication":"ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference","language":[{"iso":"eng"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39902"}]