--- _id: '39835' author: - first_name: R. full_name: Scholz, R. last_name: Scholz - first_name: A.-D. full_name: Müller, A.-D. last_name: Müller - first_name: F. full_name: Müller, F. last_name: Müller - first_name: I. full_name: Thurzo, I. last_name: Thurzo - first_name: B. A. full_name: Paez, B. A. last_name: Paez - first_name: L. full_name: Mancera, L. last_name: Mancera - first_name: D. R. T. full_name: Zahn, D. R. T. last_name: Zahn - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: 'Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. SPIE Proceedings. SPIE; 2005. doi:10.1117/12.617004' apa: Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., & Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao & D. J. Gundlach (Eds.), SPIE Proceedings. SPIE. https://doi.org/10.1117/12.617004 bibtex: '@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={10.1117/12.617004}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }' chicago: Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In SPIE Proceedings, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. https://doi.org/10.1117/12.617004. ieee: 'R. Scholz et al., “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in SPIE Proceedings, 2005, doi: 10.1117/12.617004.' mla: Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” SPIE Proceedings, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:10.1117/12.617004. short: 'R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.' date_created: 2023-01-25T08:20:11Z date_updated: 2023-03-22T10:34:27Z department: - _id: '59' doi: 10.1117/12.617004 editor: - first_name: Zhenan full_name: Bao, Zhenan last_name: Bao - first_name: David J. full_name: Gundlach, David J. last_name: Gundlach language: - iso: eng publication: SPIE Proceedings publication_identifier: issn: - 0277-786X publication_status: published publisher: SPIE status: public title: Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry type: conference user_id: '20179' year: '2005' ... --- _id: '39834' author: - first_name: R. full_name: Scholz, R. last_name: Scholz - first_name: A.-D. full_name: Müller, A.-D. last_name: Müller - first_name: F. full_name: Müller, F. last_name: Müller - first_name: I. full_name: Thurzo, I. last_name: Thurzo - first_name: B. A. full_name: Paez, B. A. last_name: Paez - first_name: L. full_name: Mancera, L. last_name: Mancera - first_name: D. R. T. full_name: Zahn, D. R. T. last_name: Zahn - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: 'Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. SPIE Proceedings. SPIE; 2005. doi:10.1117/12.617004' apa: Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., & Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao & D. J. Gundlach (Eds.), SPIE Proceedings. SPIE. https://doi.org/10.1117/12.617004 bibtex: '@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={10.1117/12.617004}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }' chicago: Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In SPIE Proceedings, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. https://doi.org/10.1117/12.617004. ieee: 'R. Scholz et al., “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in SPIE Proceedings, 2005, doi: 10.1117/12.617004.' mla: Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” SPIE Proceedings, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:10.1117/12.617004. short: 'R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.' date_created: 2023-01-25T08:19:15Z date_updated: 2023-03-22T10:32:51Z department: - _id: '59' doi: 10.1117/12.617004 editor: - first_name: Zhenan full_name: Bao, Zhenan last_name: Bao - first_name: David J. full_name: Gundlach, David J. last_name: Gundlach language: - iso: eng publication: SPIE Proceedings publication_identifier: issn: - 0277-786X publication_status: published publisher: SPIE status: public title: Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry type: conference user_id: '20179' year: '2005' ... --- _id: '39850' abstract: - lang: eng text: In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material. author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: 'Hilleringmann U. Ätztechnik. In: Silizium-Halbleitertechnologie. Vieweg+Teubner Verlag; 2004:65–90. doi:10.1007/978-3-322-94072-8_5' apa: Hilleringmann, U. (2004). Ätztechnik. In Silizium-Halbleitertechnologie (pp. 65–90). Vieweg+Teubner Verlag. https://doi.org/10.1007/978-3-322-94072-8_5 bibtex: '@inbook{Hilleringmann_2004, place={Wiesbaden}, title={Ätztechnik}, DOI={10.1007/978-3-322-94072-8_5}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2004}, pages={65–90} }' chicago: 'Hilleringmann, Ulrich. “Ätztechnik.” In Silizium-Halbleitertechnologie, 65–90. Wiesbaden: Vieweg+Teubner Verlag, 2004. https://doi.org/10.1007/978-3-322-94072-8_5.' ieee: 'U. Hilleringmann, “Ätztechnik,” in Silizium-Halbleitertechnologie, Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.' mla: Hilleringmann, Ulrich. “Ätztechnik.” Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, 2004, pp. 65–90, doi:10.1007/978-3-322-94072-8_5. short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2004, pp. 65–90.' date_created: 2023-01-25T08:39:18Z date_updated: 2023-03-21T10:05:00Z department: - _id: '59' doi: 10.1007/978-3-322-94072-8_5 language: - iso: eng page: 65–90 place: Wiesbaden publication: Silizium-Halbleitertechnologie publication_identifier: isbn: - 978-3-322-94072-8 publisher: Vieweg+Teubner Verlag status: public title: Ätztechnik type: book_chapter user_id: '20179' year: '2004' ... --- _id: '39872' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: C. full_name: Pannemann, C. last_name: Pannemann citation: ama: 'Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521463' apa: Hilleringmann, U., & Pannemann, C. (2004). Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In G. Zhang, H. Zhao, & Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE. https://doi.org/10.1117/12.521463 bibtex: '@inproceedings{Hilleringmann_Pannemann_2004, title={Imprint structured organic thin film transistors as driving circuit in single-use sensor applications}, DOI={10.1117/12.521463}, booktitle={Fifth International Symposium on Instrumentation and Control Technology}, publisher={SPIE}, author={Hilleringmann, Ulrich and Pannemann, C.}, editor={Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}, year={2004} }' chicago: Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin Film Transistors as Driving Circuit in Single-Use Sensor Applications.” In Fifth International Symposium on Instrumentation and Control Technology, edited by Guangjun Zhang, Huijie Zhao, and Zhongyu Wang. SPIE, 2004. https://doi.org/10.1117/12.521463. ieee: 'U. Hilleringmann and C. Pannemann, “Imprint structured organic thin film transistors as driving circuit in single-use sensor applications,” in Fifth International Symposium on Instrumentation and Control Technology, 2004, doi: 10.1117/12.521463.' mla: Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin Film Transistors as Driving Circuit in Single-Use Sensor Applications.” Fifth International Symposium on Instrumentation and Control Technology, edited by Guangjun Zhang et al., SPIE, 2004, doi:10.1117/12.521463. short: 'U. Hilleringmann, C. Pannemann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.' date_created: 2023-01-25T09:04:07Z date_updated: 2023-03-21T10:04:17Z department: - _id: '59' doi: 10.1117/12.521463 editor: - first_name: Guangjun full_name: Zhang, Guangjun last_name: Zhang - first_name: Huijie full_name: Zhao, Huijie last_name: Zhao - first_name: Zhongyu full_name: Wang, Zhongyu last_name: Wang language: - iso: eng publication: Fifth International Symposium on Instrumentation and Control Technology publication_identifier: issn: - 0277-786X publication_status: published publisher: SPIE status: public title: Imprint structured organic thin film transistors as driving circuit in single-use sensor applications type: conference user_id: '20179' year: '2004' ... --- _id: '39873' author: - first_name: Ralf full_name: Otterbach, Ralf last_name: Otterbach - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: 'Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521928' apa: Otterbach, R., & Hilleringmann, U. (2004). Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In G. Zhang, H. Zhao, & Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE. https://doi.org/10.1117/12.521928 bibtex: '@inproceedings{Otterbach_Hilleringmann_2004, title={Piezoresistive pressure sensors in CVD diamond for high-temperature applications}, DOI={10.1117/12.521928}, booktitle={Fifth International Symposium on Instrumentation and Control Technology}, publisher={SPIE}, author={Otterbach, Ralf and Hilleringmann, Ulrich}, editor={Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}, year={2004} }' chicago: Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors in CVD Diamond for High-Temperature Applications.” In Fifth International Symposium on Instrumentation and Control Technology, edited by Guangjun Zhang, Huijie Zhao, and Zhongyu Wang. SPIE, 2004. https://doi.org/10.1117/12.521928. ieee: 'R. Otterbach and U. Hilleringmann, “Piezoresistive pressure sensors in CVD diamond for high-temperature applications,” in Fifth International Symposium on Instrumentation and Control Technology, 2004, doi: 10.1117/12.521928.' mla: Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors in CVD Diamond for High-Temperature Applications.” Fifth International Symposium on Instrumentation and Control Technology, edited by Guangjun Zhang et al., SPIE, 2004, doi:10.1117/12.521928. short: 'R. Otterbach, U. Hilleringmann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.' date_created: 2023-01-25T09:04:49Z date_updated: 2023-03-21T10:04:02Z department: - _id: '59' doi: 10.1117/12.521928 editor: - first_name: Guangjun full_name: Zhang, Guangjun last_name: Zhang - first_name: Huijie full_name: Zhao, Huijie last_name: Zhao - first_name: Zhongyu full_name: Wang, Zhongyu last_name: Wang language: - iso: eng publication: Fifth International Symposium on Instrumentation and Control Technology publication_identifier: issn: - 0277-786X publication_status: published publisher: SPIE status: public title: Piezoresistive pressure sensors in CVD diamond for high-temperature applications type: conference user_id: '20179' year: '2004' ... --- _id: '39887' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: T. full_name: Vieregge, T. last_name: Vieregge - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann citation: ama: 'Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon and related materials for geometries down to 25 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822171' apa: Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2003). Masking and etching of silicon and related materials for geometries down to 25 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). https://doi.org/10.1109/iecon.1999.822171 bibtex: '@inproceedings{Hilleringmann_Vieregge_Horstmann_2003, title={Masking and etching of silicon and related materials for geometries down to 25 nm}, DOI={10.1109/iecon.1999.822171}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2003} }' chicago: Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “Masking and Etching of Silicon and Related Materials for Geometries down to 25 Nm.” In IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE, 2003. https://doi.org/10.1109/iecon.1999.822171. ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “Masking and etching of silicon and related materials for geometries down to 25 nm,” 2003, doi: 10.1109/iecon.1999.822171.' mla: Hilleringmann, Ulrich, et al. “Masking and Etching of Silicon and Related Materials for Geometries down to 25 Nm.” IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003, doi:10.1109/iecon.1999.822171. short: 'U. Hilleringmann, T. Vieregge, J.T. Horstmann, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.' date_created: 2023-01-25T09:12:16Z date_updated: 2023-03-21T09:59:07Z department: - _id: '59' doi: 10.1109/iecon.1999.822171 language: - iso: eng publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029) publication_status: published publisher: IEEE status: public title: Masking and etching of silicon and related materials for geometries down to 25 nm type: conference user_id: '20179' year: '2003' ... --- _id: '39888' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822163' apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2003). Matching analysis of NMOS-transistors with a channel length down to 30 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). https://doi.org/10.1109/iecon.1999.822163 bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2003, title={Matching analysis of NMOS-transistors with a channel length down to 30 nm}, DOI={10.1109/iecon.1999.822163}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2003} }' chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” In IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE, 2003. https://doi.org/10.1109/iecon.1999.822163. ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Matching analysis of NMOS-transistors with a channel length down to 30 nm,” 2003, doi: 10.1109/iecon.1999.822163.' mla: Horstmann, J. T., et al. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003, doi:10.1109/iecon.1999.822163. short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.' date_created: 2023-01-25T09:12:46Z date_updated: 2023-03-21T09:58:50Z department: - _id: '59' doi: 10.1109/iecon.1999.822163 language: - iso: eng publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029) publication_status: published publisher: IEEE status: public title: Matching analysis of NMOS-transistors with a channel length down to 30 nm type: conference user_id: '20179' year: '2003' ... --- _id: '39885' author: - first_name: G. full_name: Wirth, G. last_name: Wirth - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822164' apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., & Goser, K. (2003). Negative differential resistance in ultrashort bulk MOSFETs. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). https://doi.org/10.1109/iecon.1999.822164 bibtex: '@inproceedings{Wirth_Hilleringmann_Horstmann_Goser_2003, title={Negative differential resistance in ultrashort bulk MOSFETs}, DOI={10.1109/iecon.1999.822164}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}, year={2003} }' chicago: Wirth, G., Ulrich Hilleringmann, J.T. Horstmann, and K. Goser. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” In IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE, 2003. https://doi.org/10.1109/iecon.1999.822164. ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Negative differential resistance in ultrashort bulk MOSFETs,” 2003, doi: 10.1109/iecon.1999.822164.' mla: Wirth, G., et al. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003, doi:10.1109/iecon.1999.822164. short: 'G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.' date_created: 2023-01-25T09:11:30Z date_updated: 2023-03-21T09:59:36Z department: - _id: '59' doi: 10.1109/iecon.1999.822164 language: - iso: eng publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029) publication_status: published publisher: IEEE status: public title: Negative differential resistance in ultrashort bulk MOSFETs type: conference user_id: '20179' year: '2003' ... --- _id: '39851' author: - first_name: Ch. full_name: Pannemann, Ch. last_name: Pannemann - first_name: T. full_name: Diekmann, T. last_name: Diekmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1 apa: Pannemann, Ch., Diekmann, T., & Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering, 67–68, 845–852. https://doi.org/10.1016/s0167-9317(03)00146-1 bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={10.1016/s0167-9317(03)00146-1}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }' chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” Microelectronic Engineering 67–68 (2003): 845–52. https://doi.org/10.1016/s0167-9317(03)00146-1.' ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” Microelectronic Engineering, vol. 67–68, pp. 845–852, 2003, doi: 10.1016/s0167-9317(03)00146-1.' mla: Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” Microelectronic Engineering, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:10.1016/s0167-9317(03)00146-1. short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852. date_created: 2023-01-25T08:39:40Z date_updated: 2023-03-21T10:04:43Z department: - _id: '59' doi: 10.1016/s0167-9317(03)00146-1 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 845-852 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Nanometer scale organic thin film transistors with Pentacene type: journal_article user_id: '20179' volume: 67-68 year: '2003' ... --- _id: '39904' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978' apa: 'Hilleringmann, U., & Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices, 42(5), 841–846. https://doi.org/10.1109/16.381978' bibtex: '@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42}, DOI={10.1109/16.381978}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={841–846} }' chicago: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” IEEE Transactions on Electron Devices 42, no. 5 (2002): 841–46. https://doi.org/10.1109/16.381978.' ieee: 'U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip,” IEEE Transactions on Electron Devices, vol. 42, no. 5, pp. 841–846, 2002, doi: 10.1109/16.381978.' mla: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” IEEE Transactions on Electron Devices, vol. 42, no. 5, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:10.1109/16.381978.' short: U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846. date_created: 2023-01-25T09:22:34Z date_updated: 2023-03-21T09:51:52Z department: - _id: '59' doi: 10.1109/16.381978 intvolume: ' 42' issue: '5' keyword: - Electrical and Electronic Engineering - Electronic - Optical and Magnetic Materials language: - iso: eng page: 841-846 publication: IEEE Transactions on Electron Devices publication_identifier: issn: - 0018-9383 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: 'Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip' type: journal_article user_id: '20179' volume: 42 year: '2002' ... --- _id: '39912' author: - first_name: I. full_name: Schönstein, I. last_name: Schönstein - first_name: J. full_name: Müller, J. last_name: Müller - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j apa: Schönstein, I., Müller, J., Hilleringmann, U., & Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366. https://doi.org/10.1016/0167-9317(93)90092-j bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={10.1016/0167-9317(93)90092-j}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }' chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering 21, no. 1–4 (2002): 363–66. https://doi.org/10.1016/0167-9317(93)90092-j.' ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi: 10.1016/0167-9317(93)90092-j.' mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:10.1016/0167-9317(93)90092-j. short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366. date_created: 2023-01-25T09:26:21Z date_updated: 2023-03-21T09:50:03Z department: - _id: '59' doi: 10.1016/0167-9317(93)90092-j intvolume: ' 21' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 363-366 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Characterization of submicron NMOS devices due to visible light emission type: journal_article user_id: '20179' volume: 21 year: '2002' ... --- _id: '39914' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={10.1016/0167-9317(92)90425-q}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }' chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.' ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.' mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q. short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214. date_created: 2023-01-25T09:27:23Z date_updated: 2023-03-21T09:49:25Z department: - _id: '59' doi: 10.1016/0167-9317(92)90425-q intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 211-214 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39906' author: - first_name: E. full_name: Brass, E. last_name: Brass - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714 apa: Brass, E., Hilleringmann, U., & Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010. https://doi.org/10.1109/4.297714 bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={10.1109/4.297714}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }' chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” IEEE Journal of Solid-State Circuits 29, no. 8 (2002): 1006–10. https://doi.org/10.1109/4.297714.' ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi: 10.1109/4.297714.' mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” IEEE Journal of Solid-State Circuits, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:10.1109/4.297714. short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010. date_created: 2023-01-25T09:23:36Z date_updated: 2023-03-21T09:51:19Z department: - _id: '59' doi: 10.1109/4.297714 intvolume: ' 29' issue: '8' keyword: - Electrical and Electronic Engineering language: - iso: eng page: 1006-1010 publication: IEEE Journal of Solid-State Circuits publication_identifier: issn: - 0018-9200 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: System integration of optical devices and analog CMOS amplifiers type: journal_article user_id: '20179' volume: 29 year: '2002' ... --- _id: '39907' author: - first_name: E. full_name: Brass, E. last_name: Brass - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714 apa: Brass, E., Hilleringmann, U., & Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010. https://doi.org/10.1109/4.297714 bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={10.1109/4.297714}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }' chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” IEEE Journal of Solid-State Circuits 29, no. 8 (2002): 1006–10. https://doi.org/10.1109/4.297714.' ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi: 10.1109/4.297714.' mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” IEEE Journal of Solid-State Circuits, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:10.1109/4.297714. short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010. date_created: 2023-01-25T09:24:15Z date_updated: 2023-03-21T09:51:33Z department: - _id: '59' doi: 10.1109/4.297714 intvolume: ' 29' issue: '8' keyword: - Electrical and Electronic Engineering language: - iso: eng page: 1006-1010 publication: IEEE Journal of Solid-State Circuits publication_identifier: issn: - 0018-9200 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: System integration of optical devices and analog CMOS amplifiers type: journal_article user_id: '20179' volume: 29 year: '2002' ... --- _id: '39899' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434. https://doi.org/10.1016/0167-9317(95)00280-4 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={10.1016/0167-9317(95)00280-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering 30, no. 1–4 (2002): 431–34. https://doi.org/10.1016/0167-9317(95)00280-4.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi: 10.1016/0167-9317(95)00280-4.' mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434. date_created: 2023-01-25T09:20:20Z date_updated: 2023-03-21T09:53:55Z department: - _id: '59' doi: 10.1016/0167-9317(95)00280-4 intvolume: ' 30' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 431-434 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique type: journal_article user_id: '20179' volume: 30 year: '2002' ... --- _id: '39925' author: - first_name: K. full_name: Goser, K. last_name: Goser - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: U. full_name: Rueckert, U. last_name: Rueckert - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985 apa: Goser, K., Hilleringmann, U., Rueckert, U., & Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44. https://doi.org/10.1109/40.42985 bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={10.1109/40.42985}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }' chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro 9, no. 6 (2002): 28–44. https://doi.org/10.1109/40.42985.' ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” IEEE Micro, vol. 9, no. 6, pp. 28–44, 2002, doi: 10.1109/40.42985.' mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:10.1109/40.42985. short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44. date_created: 2023-01-25T09:33:18Z date_updated: 2023-03-21T09:57:17Z department: - _id: '59' doi: 10.1109/40.42985 intvolume: ' 9' issue: '6' keyword: - Electrical and Electronic Engineering - Hardware and Architecture - Software language: - iso: eng page: 28-44 publication: IEEE Micro publication_identifier: issn: - 0272-1732 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: VLSI technologies for artificial neural networks type: journal_article user_id: '20179' volume: 9 year: '2002' ... --- _id: '39882' author: - first_name: V. full_name: Mankowski, V. last_name: Mankowski - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1 apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528. https://doi.org/10.1016/s0167-9317(00)00370-1 bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={10.1016/s0167-9317(00)00370-1}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }' chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering 53, no. 1–4 (2002): 525–28. https://doi.org/10.1016/s0167-9317(00)00370-1.' ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi: 10.1016/s0167-9317(00)00370-1.' mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:10.1016/s0167-9317(00)00370-1. short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528. date_created: 2023-01-25T09:10:13Z date_updated: 2023-03-21T10:00:06Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00370-1 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 525-528 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39879' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216. https://doi.org/10.1016/s0167-9317(00)00299-9 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={10.1016/s0167-9317(00)00299-9}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering 53, no. 1–4 (2002): 213–16. https://doi.org/10.1016/s0167-9317(00)00299-9.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi: 10.1016/s0167-9317(00)00299-9.' mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:10.1016/s0167-9317(00)00299-9. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216. date_created: 2023-01-25T09:08:36Z date_updated: 2023-03-21T10:02:46Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00299-9 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 213-216 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39880' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560' apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). https://doi.org/10.1109/iecon.2000.972560 bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={10.1109/iecon.2000.972560}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }' chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE, 2002. https://doi.org/10.1109/iecon.2000.972560. ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: 10.1109/iecon.2000.972560.' mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002, doi:10.1109/iecon.2000.972560. short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.' date_created: 2023-01-25T09:09:18Z date_updated: 2023-03-21T10:02:30Z department: - _id: '59' doi: 10.1109/iecon.2000.972560 language: - iso: eng publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141) publication_status: published publisher: IEEE status: public title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: conference user_id: '20179' year: '2002' ... --- _id: '39881' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560' apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). https://doi.org/10.1109/iecon.2000.972560 bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={10.1109/iecon.2000.972560}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }' chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE, 2002. https://doi.org/10.1109/iecon.2000.972560. ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: 10.1109/iecon.2000.972560.' mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002, doi:10.1109/iecon.2000.972560. short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.' date_created: 2023-01-25T09:09:53Z date_updated: 2023-03-21T10:02:17Z department: - _id: '59' doi: 10.1109/iecon.2000.972560 language: - iso: eng publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141) publication_status: published publisher: IEEE status: public title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: conference user_id: '20179' year: '2002' ...