[{"user_id":"84268","department":[{"_id":"633"}],"_id":"23638","language":[{"iso":"eng"}],"type":"journal_article","publication":"Advanced Materials Interfaces","status":"public","date_created":"2021-09-01T09:48:56Z","author":[{"full_name":"Khassanov, Artoem","last_name":"Khassanov","first_name":"Artoem"},{"full_name":"Schmaltz, Thomas","last_name":"Schmaltz","first_name":"Thomas"},{"full_name":"Steinrück, Hans-Georg","id":"84268","orcid":"0000-0001-6373-0877","last_name":"Steinrück","first_name":"Hans-Georg"},{"first_name":"Andreas","full_name":"Magerl, Andreas","last_name":"Magerl"},{"last_name":"Hirsch","full_name":"Hirsch, Andreas","first_name":"Andreas"},{"last_name":"Halik","full_name":"Halik, Marcus","first_name":"Marcus"}],"volume":1,"date_updated":"2022-01-06T06:55:57Z","doi":"10.1002/admi.201400238","title":"Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors","publication_status":"published","publication_identifier":{"issn":["2196-7350"]},"citation":{"chicago":"Khassanov, Artoem, Thomas Schmaltz, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” <i>Advanced Materials Interfaces</i> 1 (2014): 1400238. <a href=\"https://doi.org/10.1002/admi.201400238\">https://doi.org/10.1002/admi.201400238</a>.","ieee":"A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, and M. Halik, “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors,” <i>Advanced Materials Interfaces</i>, vol. 1, p. 1400238, 2014, doi: <a href=\"https://doi.org/10.1002/admi.201400238\">10.1002/admi.201400238</a>.","ama":"Khassanov A, Schmaltz T, Steinrück H-G, Magerl A, Hirsch A, Halik M. Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. <i>Advanced Materials Interfaces</i>. 2014;1:1400238. doi:<a href=\"https://doi.org/10.1002/admi.201400238\">10.1002/admi.201400238</a>","short":"A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, M. Halik, Advanced Materials Interfaces 1 (2014) 1400238.","mla":"Khassanov, Artoem, et al. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” <i>Advanced Materials Interfaces</i>, vol. 1, 2014, p. 1400238, doi:<a href=\"https://doi.org/10.1002/admi.201400238\">10.1002/admi.201400238</a>.","bibtex":"@article{Khassanov_Schmaltz_Steinrück_Magerl_Hirsch_Halik_2014, title={Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors}, volume={1}, DOI={<a href=\"https://doi.org/10.1002/admi.201400238\">10.1002/admi.201400238</a>}, journal={Advanced Materials Interfaces}, author={Khassanov, Artoem and Schmaltz, Thomas and Steinrück, Hans-Georg and Magerl, Andreas and Hirsch, Andreas and Halik, Marcus}, year={2014}, pages={1400238} }","apa":"Khassanov, A., Schmaltz, T., Steinrück, H.-G., Magerl, A., Hirsch, A., &#38; Halik, M. (2014). Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. <i>Advanced Materials Interfaces</i>, <i>1</i>, 1400238. <a href=\"https://doi.org/10.1002/admi.201400238\">https://doi.org/10.1002/admi.201400238</a>"},"intvolume":"         1","page":"1400238","year":"2014"},{"type":"journal_article","publication":"Nanoscale","status":"public","_id":"23639","user_id":"84268","department":[{"_id":"633"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["2040-3364","2040-3372"]},"year":"2014","citation":{"ieee":"T. Schmaltz, A. Khassanov, H.-G. Steinrück, A. Magerl, A. Hirsch, and M. Halik, “Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors,” <i>Nanoscale</i>, vol. 6, pp. 13022–13027, 2014, doi: <a href=\"https://doi.org/10.1039/c4nr03557g\">10.1039/c4nr03557g</a>.","chicago":"Schmaltz, Thomas, Artoem Khassanov, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik. “Tuning the Molecular Order of C60-Based Self-Assembled Monolayers in Field-Effect Transistors.” <i>Nanoscale</i> 6 (2014): 13022–27. <a href=\"https://doi.org/10.1039/c4nr03557g\">https://doi.org/10.1039/c4nr03557g</a>.","ama":"Schmaltz T, Khassanov A, Steinrück H-G, Magerl A, Hirsch A, Halik M. Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors. <i>Nanoscale</i>. 2014;6:13022-13027. doi:<a href=\"https://doi.org/10.1039/c4nr03557g\">10.1039/c4nr03557g</a>","bibtex":"@article{Schmaltz_Khassanov_Steinrück_Magerl_Hirsch_Halik_2014, title={Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors}, volume={6}, DOI={<a href=\"https://doi.org/10.1039/c4nr03557g\">10.1039/c4nr03557g</a>}, journal={Nanoscale}, author={Schmaltz, Thomas and Khassanov, Artoem and Steinrück, Hans-Georg and Magerl, Andreas and Hirsch, Andreas and Halik, Marcus}, year={2014}, pages={13022–13027} }","mla":"Schmaltz, Thomas, et al. “Tuning the Molecular Order of C60-Based Self-Assembled Monolayers in Field-Effect Transistors.” <i>Nanoscale</i>, vol. 6, 2014, pp. 13022–27, doi:<a href=\"https://doi.org/10.1039/c4nr03557g\">10.1039/c4nr03557g</a>.","short":"T. Schmaltz, A. Khassanov, H.-G. Steinrück, A. Magerl, A. Hirsch, M. Halik, Nanoscale 6 (2014) 13022–13027.","apa":"Schmaltz, T., Khassanov, A., Steinrück, H.-G., Magerl, A., Hirsch, A., &#38; Halik, M. (2014). Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors. <i>Nanoscale</i>, <i>6</i>, 13022–13027. <a href=\"https://doi.org/10.1039/c4nr03557g\">https://doi.org/10.1039/c4nr03557g</a>"},"page":"13022-13027","intvolume":"         6","date_updated":"2022-01-06T06:55:57Z","author":[{"full_name":"Schmaltz, Thomas","last_name":"Schmaltz","first_name":"Thomas"},{"last_name":"Khassanov","full_name":"Khassanov, Artoem","first_name":"Artoem"},{"first_name":"Hans-Georg","full_name":"Steinrück, Hans-Georg","id":"84268","last_name":"Steinrück","orcid":"0000-0001-6373-0877"},{"last_name":"Magerl","full_name":"Magerl, Andreas","first_name":"Andreas"},{"first_name":"Andreas","full_name":"Hirsch, Andreas","last_name":"Hirsch"},{"full_name":"Halik, Marcus","last_name":"Halik","first_name":"Marcus"}],"date_created":"2021-09-01T09:49:02Z","volume":6,"title":"Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors","doi":"10.1039/c4nr03557g"},{"date_created":"2021-09-01T09:49:09Z","author":[{"first_name":"Hans-Georg","id":"84268","full_name":"Steinrück, Hans-Georg","last_name":"Steinrück","orcid":"0000-0001-6373-0877"},{"full_name":"Magerl, A.","last_name":"Magerl","first_name":"A."},{"full_name":"Deutsch, M.","last_name":"Deutsch","first_name":"M."},{"first_name":"B. M.","last_name":"Ocko","full_name":"Ocko, B. M."}],"volume":113,"date_updated":"2022-01-06T06:55:57Z","doi":"10.1103/physrevlett.113.156101","title":"Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)","publication_status":"published","publication_identifier":{"issn":["0031-9007","1079-7114"]},"citation":{"short":"H.-G. Steinrück, A. Magerl, M. Deutsch, B.M. Ocko, Physical Review Letters 113 (2014) 156101.","bibtex":"@article{Steinrück_Magerl_Deutsch_Ocko_2014, title={Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)}, volume={113}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.113.156101\">10.1103/physrevlett.113.156101</a>}, journal={Physical Review Letters}, author={Steinrück, Hans-Georg and Magerl, A. and Deutsch, M. and Ocko, B. M.}, year={2014}, pages={156101} }","mla":"Steinrück, Hans-Georg, et al. “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001).” <i>Physical Review Letters</i>, vol. 113, 2014, p. 156101, doi:<a href=\"https://doi.org/10.1103/physrevlett.113.156101\">10.1103/physrevlett.113.156101</a>.","apa":"Steinrück, H.-G., Magerl, A., Deutsch, M., &#38; Ocko, B. M. (2014). Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001). <i>Physical Review Letters</i>, <i>113</i>, 156101. <a href=\"https://doi.org/10.1103/physrevlett.113.156101\">https://doi.org/10.1103/physrevlett.113.156101</a>","ama":"Steinrück H-G, Magerl A, Deutsch M, Ocko BM. Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001). <i>Physical Review Letters</i>. 2014;113:156101. doi:<a href=\"https://doi.org/10.1103/physrevlett.113.156101\">10.1103/physrevlett.113.156101</a>","ieee":"H.-G. Steinrück, A. Magerl, M. Deutsch, and B. M. Ocko, “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001),” <i>Physical Review Letters</i>, vol. 113, p. 156101, 2014, doi: <a href=\"https://doi.org/10.1103/physrevlett.113.156101\">10.1103/physrevlett.113.156101</a>.","chicago":"Steinrück, Hans-Georg, A. Magerl, M. Deutsch, and B. M. Ocko. “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001).” <i>Physical Review Letters</i> 113 (2014): 156101. <a href=\"https://doi.org/10.1103/physrevlett.113.156101\">https://doi.org/10.1103/physrevlett.113.156101</a>."},"intvolume":"       113","page":"156101","year":"2014","user_id":"84268","department":[{"_id":"633"}],"_id":"23640","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review Letters","status":"public"},{"type":"journal_article","publication":"ACS Nano","status":"public","user_id":"84268","department":[{"_id":"633"}],"_id":"23641","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["1936-0851","1936-086X"]},"citation":{"ieee":"Z. Wang <i>et al.</i>, “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution,” <i>ACS Nano</i>, vol. 7, pp. 11427–11434, 2013, doi: <a href=\"https://doi.org/10.1021/nn405488n\">10.1021/nn405488n</a>.","chicago":"Wang, Zhenxing, Saeideh Mohammadzadeh, Thomas Schmaltz, Johannes Kirschner, Artoem Khassanov, Siegfried Eigler, Udo Mundloch, et al. “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution.” <i>ACS Nano</i> 7 (2013): 11427–34. <a href=\"https://doi.org/10.1021/nn405488n\">https://doi.org/10.1021/nn405488n</a>.","ama":"Wang Z, Mohammadzadeh S, Schmaltz T, et al. Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution. <i>ACS Nano</i>. 2013;7:11427-11434. doi:<a href=\"https://doi.org/10.1021/nn405488n\">10.1021/nn405488n</a>","short":"Z. Wang, S. Mohammadzadeh, T. Schmaltz, J. Kirschner, A. Khassanov, S. Eigler, U. Mundloch, C. Backes, H.-G. Steinrück, A. Magerl, F. Hauke, A. Hirsch, M. Halik, ACS Nano 7 (2013) 11427–11434.","mla":"Wang, Zhenxing, et al. “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution.” <i>ACS Nano</i>, vol. 7, 2013, pp. 11427–34, doi:<a href=\"https://doi.org/10.1021/nn405488n\">10.1021/nn405488n</a>.","bibtex":"@article{Wang_Mohammadzadeh_Schmaltz_Kirschner_Khassanov_Eigler_Mundloch_Backes_Steinrück_Magerl_et al._2013, title={Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution}, volume={7}, DOI={<a href=\"https://doi.org/10.1021/nn405488n\">10.1021/nn405488n</a>}, journal={ACS Nano}, author={Wang, Zhenxing and Mohammadzadeh, Saeideh and Schmaltz, Thomas and Kirschner, Johannes and Khassanov, Artoem and Eigler, Siegfried and Mundloch, Udo and Backes, Claudia and Steinrück, Hans-Georg and Magerl, Andreas and et al.}, year={2013}, pages={11427–11434} }","apa":"Wang, Z., Mohammadzadeh, S., Schmaltz, T., Kirschner, J., Khassanov, A., Eigler, S., Mundloch, U., Backes, C., Steinrück, H.-G., Magerl, A., Hauke, F., Hirsch, A., &#38; Halik, M. (2013). Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution. <i>ACS Nano</i>, <i>7</i>, 11427–11434. <a href=\"https://doi.org/10.1021/nn405488n\">https://doi.org/10.1021/nn405488n</a>"},"intvolume":"         7","page":"11427-11434","year":"2013","author":[{"full_name":"Wang, Zhenxing","last_name":"Wang","first_name":"Zhenxing"},{"first_name":"Saeideh","full_name":"Mohammadzadeh, Saeideh","last_name":"Mohammadzadeh"},{"last_name":"Schmaltz","full_name":"Schmaltz, Thomas","first_name":"Thomas"},{"first_name":"Johannes","last_name":"Kirschner","full_name":"Kirschner, Johannes"},{"first_name":"Artoem","last_name":"Khassanov","full_name":"Khassanov, Artoem"},{"first_name":"Siegfried","full_name":"Eigler, Siegfried","last_name":"Eigler"},{"first_name":"Udo","full_name":"Mundloch, Udo","last_name":"Mundloch"},{"first_name":"Claudia","last_name":"Backes","full_name":"Backes, Claudia"},{"full_name":"Steinrück, Hans-Georg","id":"84268","last_name":"Steinrück","orcid":"0000-0001-6373-0877","first_name":"Hans-Georg"},{"first_name":"Andreas","last_name":"Magerl","full_name":"Magerl, Andreas"},{"first_name":"Frank","full_name":"Hauke, Frank","last_name":"Hauke"},{"first_name":"Andreas","full_name":"Hirsch, Andreas","last_name":"Hirsch"},{"full_name":"Halik, Marcus","last_name":"Halik","first_name":"Marcus"}],"date_created":"2021-09-01T09:49:14Z","volume":7,"date_updated":"2022-01-06T06:55:57Z","doi":"10.1021/nn405488n","title":"Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution"},{"status":"public","publication":"Advanced Materials","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"633"}],"user_id":"84268","_id":"23642","intvolume":"        25","page":"4511-4514","citation":{"apa":"Schmaltz, T., Amin, A. Y., Khassanov, A., Meyer-Friedrichsen, T., Steinrück, H.-G., Magerl, A., Segura, J. J., Voitchovsky, K., Stellacci, F., &#38; Halik, M. (2013). Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. <i>Advanced Materials</i>, <i>25</i>, 4511–4514. <a href=\"https://doi.org/10.1002/adma.201301176\">https://doi.org/10.1002/adma.201301176</a>","mla":"Schmaltz, Thomas, et al. “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates.” <i>Advanced Materials</i>, vol. 25, 2013, pp. 4511–14, doi:<a href=\"https://doi.org/10.1002/adma.201301176\">10.1002/adma.201301176</a>.","bibtex":"@article{Schmaltz_Amin_Khassanov_Meyer-Friedrichsen_Steinrück_Magerl_Segura_Voitchovsky_Stellacci_Halik_2013, title={Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates}, volume={25}, DOI={<a href=\"https://doi.org/10.1002/adma.201301176\">10.1002/adma.201301176</a>}, journal={Advanced Materials}, author={Schmaltz, Thomas and Amin, Atefeh Y. and Khassanov, Artoem and Meyer-Friedrichsen, Timo and Steinrück, Hans-Georg and Magerl, Andreas and Segura, Juan José and Voitchovsky, Kislon and Stellacci, Francesco and Halik, Marcus}, year={2013}, pages={4511–4514} }","short":"T. Schmaltz, A.Y. Amin, A. Khassanov, T. Meyer-Friedrichsen, H.-G. Steinrück, A. Magerl, J.J. Segura, K. Voitchovsky, F. Stellacci, M. Halik, Advanced Materials 25 (2013) 4511–4514.","ama":"Schmaltz T, Amin AY, Khassanov A, et al. Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. <i>Advanced Materials</i>. 2013;25:4511-4514. doi:<a href=\"https://doi.org/10.1002/adma.201301176\">10.1002/adma.201301176</a>","chicago":"Schmaltz, Thomas, Atefeh Y. Amin, Artoem Khassanov, Timo Meyer-Friedrichsen, Hans-Georg Steinrück, Andreas Magerl, Juan José Segura, Kislon Voitchovsky, Francesco Stellacci, and Marcus Halik. “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates.” <i>Advanced Materials</i> 25 (2013): 4511–14. <a href=\"https://doi.org/10.1002/adma.201301176\">https://doi.org/10.1002/adma.201301176</a>.","ieee":"T. Schmaltz <i>et al.</i>, “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates,” <i>Advanced Materials</i>, vol. 25, pp. 4511–4514, 2013, doi: <a href=\"https://doi.org/10.1002/adma.201301176\">10.1002/adma.201301176</a>."},"year":"2013","publication_identifier":{"issn":["0935-9648"]},"publication_status":"published","doi":"10.1002/adma.201301176","title":"Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates","volume":25,"date_created":"2021-09-01T09:49:22Z","author":[{"first_name":"Thomas","full_name":"Schmaltz, Thomas","last_name":"Schmaltz"},{"full_name":"Amin, Atefeh Y.","last_name":"Amin","first_name":"Atefeh Y."},{"first_name":"Artoem","full_name":"Khassanov, Artoem","last_name":"Khassanov"},{"last_name":"Meyer-Friedrichsen","full_name":"Meyer-Friedrichsen, Timo","first_name":"Timo"},{"full_name":"Steinrück, Hans-Georg","id":"84268","last_name":"Steinrück","orcid":"0000-0001-6373-0877","first_name":"Hans-Georg"},{"first_name":"Andreas","last_name":"Magerl","full_name":"Magerl, Andreas"},{"full_name":"Segura, Juan José","last_name":"Segura","first_name":"Juan José"},{"full_name":"Voitchovsky, Kislon","last_name":"Voitchovsky","first_name":"Kislon"},{"first_name":"Francesco","full_name":"Stellacci, Francesco","last_name":"Stellacci"},{"first_name":"Marcus","last_name":"Halik","full_name":"Halik, Marcus"}],"date_updated":"2022-01-06T06:55:57Z"},{"status":"public","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"_id":"23643","user_id":"84268","department":[{"_id":"633"}],"year":"2013","citation":{"mla":"Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” <i>Journal of Applied Physics</i>, vol. 7, 2013, p. 073508, doi:<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>.","bibtex":"@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013, title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}, volume={7}, DOI={<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>}, journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}, year={2013}, pages={073508} }","short":"J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück, G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508.","apa":"Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., &#38; Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. <i>Journal of Applied Physics</i>, <i>7</i>, 073508. <a href=\"https://doi.org/10.1063/1.4792747\">https://doi.org/10.1063/1.4792747</a>","chicago":"Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” <i>Journal of Applied Physics</i> 7 (2013): 073508. <a href=\"https://doi.org/10.1063/1.4792747\">https://doi.org/10.1063/1.4792747</a>.","ieee":"J. Will <i>et al.</i>, “Oxygen diffusivity in silicon derived from dynamical X-ray diffraction,” <i>Journal of Applied Physics</i>, vol. 7, p. 073508, 2013, doi: <a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>.","ama":"Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. <i>Journal of Applied Physics</i>. 2013;7:073508. doi:<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>"},"page":"073508","intvolume":"         7","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Oxygen diffusivity in silicon derived from dynamical X-ray diffraction","doi":"10.1063/1.4792747","date_updated":"2022-01-06T06:55:57Z","author":[{"full_name":"Will, J.","last_name":"Will","first_name":"J."},{"last_name":"Gröschel","full_name":"Gröschel, A.","first_name":"A."},{"last_name":"Kot","full_name":"Kot, D.","first_name":"D."},{"full_name":"Schubert, M. A.","last_name":"Schubert","first_name":"M. A."},{"first_name":"C.","full_name":"Bergmann, C.","last_name":"Bergmann"},{"orcid":"0000-0001-6373-0877","last_name":"Steinrück","full_name":"Steinrück, Hans-Georg","id":"84268","first_name":"Hans-Georg"},{"full_name":"Kissinger, G.","last_name":"Kissinger","first_name":"G."},{"full_name":"Magerl, A.","last_name":"Magerl","first_name":"A."}],"date_created":"2021-09-01T09:49:28Z","volume":7}]