--- _id: '23638' author: - first_name: Artoem full_name: Khassanov, Artoem last_name: Khassanov - first_name: Thomas full_name: Schmaltz, Thomas last_name: Schmaltz - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: Andreas full_name: Magerl, Andreas last_name: Magerl - first_name: Andreas full_name: Hirsch, Andreas last_name: Hirsch - first_name: Marcus full_name: Halik, Marcus last_name: Halik citation: ama: Khassanov A, Schmaltz T, Steinrück H-G, Magerl A, Hirsch A, Halik M. Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. Advanced Materials Interfaces. 2014;1:1400238. doi:10.1002/admi.201400238 apa: Khassanov, A., Schmaltz, T., Steinrück, H.-G., Magerl, A., Hirsch, A., & Halik, M. (2014). Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. Advanced Materials Interfaces, 1, 1400238. https://doi.org/10.1002/admi.201400238 bibtex: '@article{Khassanov_Schmaltz_Steinrück_Magerl_Hirsch_Halik_2014, title={Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors}, volume={1}, DOI={10.1002/admi.201400238}, journal={Advanced Materials Interfaces}, author={Khassanov, Artoem and Schmaltz, Thomas and Steinrück, Hans-Georg and Magerl, Andreas and Hirsch, Andreas and Halik, Marcus}, year={2014}, pages={1400238} }' chicago: 'Khassanov, Artoem, Thomas Schmaltz, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” Advanced Materials Interfaces 1 (2014): 1400238. https://doi.org/10.1002/admi.201400238.' ieee: 'A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, and M. Halik, “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors,” Advanced Materials Interfaces, vol. 1, p. 1400238, 2014, doi: 10.1002/admi.201400238.' mla: Khassanov, Artoem, et al. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” Advanced Materials Interfaces, vol. 1, 2014, p. 1400238, doi:10.1002/admi.201400238. short: A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, M. Halik, Advanced Materials Interfaces 1 (2014) 1400238. date_created: 2021-09-01T09:48:56Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1002/admi.201400238 intvolume: ' 1' language: - iso: eng page: '1400238' publication: Advanced Materials Interfaces publication_identifier: issn: - 2196-7350 publication_status: published status: public title: Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors type: journal_article user_id: '84268' volume: 1 year: '2014' ... --- _id: '23639' author: - first_name: Thomas full_name: Schmaltz, Thomas last_name: Schmaltz - first_name: Artoem full_name: Khassanov, Artoem last_name: Khassanov - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: Andreas full_name: Magerl, Andreas last_name: Magerl - first_name: Andreas full_name: Hirsch, Andreas last_name: Hirsch - first_name: Marcus full_name: Halik, Marcus last_name: Halik citation: ama: Schmaltz T, Khassanov A, Steinrück H-G, Magerl A, Hirsch A, Halik M. Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors. Nanoscale. 2014;6:13022-13027. doi:10.1039/c4nr03557g apa: Schmaltz, T., Khassanov, A., Steinrück, H.-G., Magerl, A., Hirsch, A., & Halik, M. (2014). Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors. Nanoscale, 6, 13022–13027. https://doi.org/10.1039/c4nr03557g bibtex: '@article{Schmaltz_Khassanov_Steinrück_Magerl_Hirsch_Halik_2014, title={Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors}, volume={6}, DOI={10.1039/c4nr03557g}, journal={Nanoscale}, author={Schmaltz, Thomas and Khassanov, Artoem and Steinrück, Hans-Georg and Magerl, Andreas and Hirsch, Andreas and Halik, Marcus}, year={2014}, pages={13022–13027} }' chicago: 'Schmaltz, Thomas, Artoem Khassanov, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik. “Tuning the Molecular Order of C60-Based Self-Assembled Monolayers in Field-Effect Transistors.” Nanoscale 6 (2014): 13022–27. https://doi.org/10.1039/c4nr03557g.' ieee: 'T. Schmaltz, A. Khassanov, H.-G. Steinrück, A. Magerl, A. Hirsch, and M. Halik, “Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors,” Nanoscale, vol. 6, pp. 13022–13027, 2014, doi: 10.1039/c4nr03557g.' mla: Schmaltz, Thomas, et al. “Tuning the Molecular Order of C60-Based Self-Assembled Monolayers in Field-Effect Transistors.” Nanoscale, vol. 6, 2014, pp. 13022–27, doi:10.1039/c4nr03557g. short: T. Schmaltz, A. Khassanov, H.-G. Steinrück, A. Magerl, A. Hirsch, M. Halik, Nanoscale 6 (2014) 13022–13027. date_created: 2021-09-01T09:49:02Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1039/c4nr03557g intvolume: ' 6' language: - iso: eng page: 13022-13027 publication: Nanoscale publication_identifier: issn: - 2040-3364 - 2040-3372 publication_status: published status: public title: Tuning the molecular order of C60-based self-assembled monolayers in field-effect transistors type: journal_article user_id: '84268' volume: 6 year: '2014' ... --- _id: '23640' author: - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: A. full_name: Magerl, A. last_name: Magerl - first_name: M. full_name: Deutsch, M. last_name: Deutsch - first_name: B. M. full_name: Ocko, B. M. last_name: Ocko citation: ama: Steinrück H-G, Magerl A, Deutsch M, Ocko BM. Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001). Physical Review Letters. 2014;113:156101. doi:10.1103/physrevlett.113.156101 apa: Steinrück, H.-G., Magerl, A., Deutsch, M., & Ocko, B. M. (2014). Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001). Physical Review Letters, 113, 156101. https://doi.org/10.1103/physrevlett.113.156101 bibtex: '@article{Steinrück_Magerl_Deutsch_Ocko_2014, title={Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)}, volume={113}, DOI={10.1103/physrevlett.113.156101}, journal={Physical Review Letters}, author={Steinrück, Hans-Georg and Magerl, A. and Deutsch, M. and Ocko, B. M.}, year={2014}, pages={156101} }' chicago: 'Steinrück, Hans-Georg, A. Magerl, M. Deutsch, and B. M. Ocko. “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001).” Physical Review Letters 113 (2014): 156101. https://doi.org/10.1103/physrevlett.113.156101.' ieee: 'H.-G. Steinrück, A. Magerl, M. Deutsch, and B. M. Ocko, “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001),” Physical Review Letters, vol. 113, p. 156101, 2014, doi: 10.1103/physrevlett.113.156101.' mla: Steinrück, Hans-Georg, et al. “Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001).” Physical Review Letters, vol. 113, 2014, p. 156101, doi:10.1103/physrevlett.113.156101. short: H.-G. Steinrück, A. Magerl, M. Deutsch, B.M. Ocko, Physical Review Letters 113 (2014) 156101. date_created: 2021-09-01T09:49:09Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1103/physrevlett.113.156101 intvolume: ' 113' language: - iso: eng page: '156101' publication: Physical Review Letters publication_identifier: issn: - 0031-9007 - 1079-7114 publication_status: published status: public title: Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001) type: journal_article user_id: '84268' volume: 113 year: '2014' ... --- _id: '23641' author: - first_name: Zhenxing full_name: Wang, Zhenxing last_name: Wang - first_name: Saeideh full_name: Mohammadzadeh, Saeideh last_name: Mohammadzadeh - first_name: Thomas full_name: Schmaltz, Thomas last_name: Schmaltz - first_name: Johannes full_name: Kirschner, Johannes last_name: Kirschner - first_name: Artoem full_name: Khassanov, Artoem last_name: Khassanov - first_name: Siegfried full_name: Eigler, Siegfried last_name: Eigler - first_name: Udo full_name: Mundloch, Udo last_name: Mundloch - first_name: Claudia full_name: Backes, Claudia last_name: Backes - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: Andreas full_name: Magerl, Andreas last_name: Magerl - first_name: Frank full_name: Hauke, Frank last_name: Hauke - first_name: Andreas full_name: Hirsch, Andreas last_name: Hirsch - first_name: Marcus full_name: Halik, Marcus last_name: Halik citation: ama: Wang Z, Mohammadzadeh S, Schmaltz T, et al. Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution. ACS Nano. 2013;7:11427-11434. doi:10.1021/nn405488n apa: Wang, Z., Mohammadzadeh, S., Schmaltz, T., Kirschner, J., Khassanov, A., Eigler, S., Mundloch, U., Backes, C., Steinrück, H.-G., Magerl, A., Hauke, F., Hirsch, A., & Halik, M. (2013). Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution. ACS Nano, 7, 11427–11434. https://doi.org/10.1021/nn405488n bibtex: '@article{Wang_Mohammadzadeh_Schmaltz_Kirschner_Khassanov_Eigler_Mundloch_Backes_Steinrück_Magerl_et al._2013, title={Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution}, volume={7}, DOI={10.1021/nn405488n}, journal={ACS Nano}, author={Wang, Zhenxing and Mohammadzadeh, Saeideh and Schmaltz, Thomas and Kirschner, Johannes and Khassanov, Artoem and Eigler, Siegfried and Mundloch, Udo and Backes, Claudia and Steinrück, Hans-Georg and Magerl, Andreas and et al.}, year={2013}, pages={11427–11434} }' chicago: 'Wang, Zhenxing, Saeideh Mohammadzadeh, Thomas Schmaltz, Johannes Kirschner, Artoem Khassanov, Siegfried Eigler, Udo Mundloch, et al. “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution.” ACS Nano 7 (2013): 11427–34. https://doi.org/10.1021/nn405488n.' ieee: 'Z. Wang et al., “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution,” ACS Nano, vol. 7, pp. 11427–11434, 2013, doi: 10.1021/nn405488n.' mla: Wang, Zhenxing, et al. “Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution.” ACS Nano, vol. 7, 2013, pp. 11427–34, doi:10.1021/nn405488n. short: Z. Wang, S. Mohammadzadeh, T. Schmaltz, J. Kirschner, A. Khassanov, S. Eigler, U. Mundloch, C. Backes, H.-G. Steinrück, A. Magerl, F. Hauke, A. Hirsch, M. Halik, ACS Nano 7 (2013) 11427–11434. date_created: 2021-09-01T09:49:14Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1021/nn405488n intvolume: ' 7' language: - iso: eng page: 11427-11434 publication: ACS Nano publication_identifier: issn: - 1936-0851 - 1936-086X publication_status: published status: public title: Region-Selective Self-Assembly of Functionalized Carbon Allotropes from Solution type: journal_article user_id: '84268' volume: 7 year: '2013' ... --- _id: '23642' author: - first_name: Thomas full_name: Schmaltz, Thomas last_name: Schmaltz - first_name: Atefeh Y. full_name: Amin, Atefeh Y. last_name: Amin - first_name: Artoem full_name: Khassanov, Artoem last_name: Khassanov - first_name: Timo full_name: Meyer-Friedrichsen, Timo last_name: Meyer-Friedrichsen - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: Andreas full_name: Magerl, Andreas last_name: Magerl - first_name: Juan José full_name: Segura, Juan José last_name: Segura - first_name: Kislon full_name: Voitchovsky, Kislon last_name: Voitchovsky - first_name: Francesco full_name: Stellacci, Francesco last_name: Stellacci - first_name: Marcus full_name: Halik, Marcus last_name: Halik citation: ama: Schmaltz T, Amin AY, Khassanov A, et al. Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. Advanced Materials. 2013;25:4511-4514. doi:10.1002/adma.201301176 apa: Schmaltz, T., Amin, A. Y., Khassanov, A., Meyer-Friedrichsen, T., Steinrück, H.-G., Magerl, A., Segura, J. J., Voitchovsky, K., Stellacci, F., & Halik, M. (2013). Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. Advanced Materials, 25, 4511–4514. https://doi.org/10.1002/adma.201301176 bibtex: '@article{Schmaltz_Amin_Khassanov_Meyer-Friedrichsen_Steinrück_Magerl_Segura_Voitchovsky_Stellacci_Halik_2013, title={Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates}, volume={25}, DOI={10.1002/adma.201301176}, journal={Advanced Materials}, author={Schmaltz, Thomas and Amin, Atefeh Y. and Khassanov, Artoem and Meyer-Friedrichsen, Timo and Steinrück, Hans-Georg and Magerl, Andreas and Segura, Juan José and Voitchovsky, Kislon and Stellacci, Francesco and Halik, Marcus}, year={2013}, pages={4511–4514} }' chicago: 'Schmaltz, Thomas, Atefeh Y. Amin, Artoem Khassanov, Timo Meyer-Friedrichsen, Hans-Georg Steinrück, Andreas Magerl, Juan José Segura, Kislon Voitchovsky, Francesco Stellacci, and Marcus Halik. “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates.” Advanced Materials 25 (2013): 4511–14. https://doi.org/10.1002/adma.201301176.' ieee: 'T. Schmaltz et al., “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates,” Advanced Materials, vol. 25, pp. 4511–4514, 2013, doi: 10.1002/adma.201301176.' mla: Schmaltz, Thomas, et al. “Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates.” Advanced Materials, vol. 25, 2013, pp. 4511–14, doi:10.1002/adma.201301176. short: T. Schmaltz, A.Y. Amin, A. Khassanov, T. Meyer-Friedrichsen, H.-G. Steinrück, A. Magerl, J.J. Segura, K. Voitchovsky, F. Stellacci, M. Halik, Advanced Materials 25 (2013) 4511–4514. date_created: 2021-09-01T09:49:22Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1002/adma.201301176 intvolume: ' 25' language: - iso: eng page: 4511-4514 publication: Advanced Materials publication_identifier: issn: - 0935-9648 publication_status: published status: public title: Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates type: journal_article user_id: '84268' volume: 25 year: '2013' ... --- _id: '23643' author: - first_name: J. full_name: Will, J. last_name: Will - first_name: A. full_name: Gröschel, A. last_name: Gröschel - first_name: D. full_name: Kot, D. last_name: Kot - first_name: M. A. full_name: Schubert, M. A. last_name: Schubert - first_name: C. full_name: Bergmann, C. last_name: Bergmann - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: G. full_name: Kissinger, G. last_name: Kissinger - first_name: A. full_name: Magerl, A. last_name: Magerl citation: ama: Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics. 2013;7:073508. doi:10.1063/1.4792747 apa: Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., & Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 7, 073508. https://doi.org/10.1063/1.4792747 bibtex: '@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013, title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}, volume={7}, DOI={10.1063/1.4792747}, journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}, year={2013}, pages={073508} }' chicago: 'Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics 7 (2013): 073508. https://doi.org/10.1063/1.4792747.' ieee: 'J. Will et al., “Oxygen diffusivity in silicon derived from dynamical X-ray diffraction,” Journal of Applied Physics, vol. 7, p. 073508, 2013, doi: 10.1063/1.4792747.' mla: Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics, vol. 7, 2013, p. 073508, doi:10.1063/1.4792747. short: J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück, G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508. date_created: 2021-09-01T09:49:28Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1063/1.4792747 intvolume: ' 7' language: - iso: eng page: '073508' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Oxygen diffusivity in silicon derived from dynamical X-ray diffraction type: journal_article user_id: '84268' volume: 7 year: '2013' ...