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Gerhardt <i>et al.</i>, “Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te,” <i>Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008</i>, pp. 1349–1523, 2009.","chicago":"Gerhardt, Nils Christopher, Nektarios Koukourakis, Martin Hofmann, Bernadette Kunert, Igor Nemeth, Steffen Zinnkann, G. Lukin, et al. “Op­ti­cal Ve­ri­fi­ca­ti­on of Gain in Ga(NAsP)/(BGa)(AsP) Mul­ti-Quan­tum-Well He­te­rost­ruc­tu­res Mo­no­li­thi­cal­ly Grown Lat­ti­ce-Mat­ched on (001) Si­li­con Sub­stra­te.” <i>Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008</i>, 2009, 1349–1523.","bibtex":"@article{Gerhardt_Koukourakis_Hofmann_Kunert_Nemeth_Zinnkann_Lukin_Adams_Fritz_Volz_et al._2009, title={Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te}, journal={Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008}, author={Gerhardt, Nils Christopher and Koukourakis, Nektarios and Hofmann, Martin and Kunert, Bernadette and Nemeth, Igor and Zinnkann, Steffen and Lukin, G. and Adams, Troy B. and Fritz, R. and Volz, Kerstin and et al.}, year={2009}, pages={1349–1523} }","mla":"Gerhardt, Nils Christopher, et al. “Op­ti­cal Ve­ri­fi­ca­ti­on of Gain in Ga(NAsP)/(BGa)(AsP) Mul­ti-Quan­tum-Well He­te­rost­ruc­tu­res Mo­no­li­thi­cal­ly Grown Lat­ti­ce-Mat­ched on (001) Si­li­con Sub­stra­te.” <i>Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008</i>, 2009, pp. 1349–523.","short":"N.C. Gerhardt, N. Koukourakis, M. Hofmann, B. Kunert, I. Nemeth, S. Zinnkann, G. Lukin, T.B. Adams, R. Fritz, K. Volz, W. Stolz, C. Lange, N.S. Koester, D.J. Franzbach, S.N. Chatterjee, W.W. Rühle, Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008 (2009) 1349–1523.","apa":"Gerhardt, N. C., Koukourakis, N., Hofmann, M., Kunert, B., Nemeth, I., Zinnkann, S., Lukin, G., Adams, T. B., Fritz, R., Volz, K., Stolz, W., Lange, C., Koester, N. S., Franzbach, D. J., Chatterjee, S. N., &#38; Rühle, W. W. (2009). Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te. <i>Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008</i>, 1349–1523."},"year":"2009","date_created":"2026-02-20T10:04:30Z","author":[{"last_name":"Gerhardt","orcid":"0009-0002-5538-231X","id":"115298","full_name":"Gerhardt, Nils Christopher","first_name":"Nils Christopher"},{"first_name":"Nektarios","full_name":"Koukourakis, Nektarios","last_name":"Koukourakis"},{"last_name":"Hofmann","full_name":"Hofmann, Martin","first_name":"Martin"},{"last_name":"Kunert","full_name":"Kunert, Bernadette","first_name":"Bernadette"},{"first_name":"Igor","full_name":"Nemeth, Igor","last_name":"Nemeth"},{"first_name":"Steffen","last_name":"Zinnkann","full_name":"Zinnkann, Steffen"},{"first_name":"G.","full_name":"Lukin, G.","last_name":"Lukin"},{"full_name":"Adams, Troy B.","last_name":"Adams","first_name":"Troy B."},{"first_name":"R.","full_name":"Fritz, R.","last_name":"Fritz"},{"first_name":"Kerstin","last_name":"Volz","full_name":"Volz, Kerstin"},{"first_name":"Wolfgang","full_name":"Stolz, Wolfgang","last_name":"Stolz"},{"full_name":"Lange, Christoph","last_name":"Lange","first_name":"Christoph"},{"first_name":"N. 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Gerhardt, M. Hofmann, C. Lange, S.N. Chatterjee, B. Kunert, K. Volz, W. Stolz, W.W. 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Gerhardt <i>et al.</i>, “Gain characteristics and lasing of Ga(NAsP) multi-quantum well structures,” in <i>Papers presented at the 9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 9)</i>, 2009, pp. 576–578, doi: <a href=\"https://doi.org/10.1002/pssc.200880360\">10.1002/pssc.200880360</a>.","ama":"Gerhardt NC, Hofmann M, Lange C, et al. Gain characteristics and lasing of Ga(NAsP) multi-quantum well structures. 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Koukourakis <i>et al.</i>, “New concepts for depth resolved holographic imaging based on spectrally tunable diode lasers,” in <i>Conference on Lasers and Electro-Optics, 2009 and 2009 Quantum Electronics and Laser Science Conference</i>, 2009, pp. 1253–1254, doi: <a href=\"https://doi.org/10.1364/cleo.2009.ctuaa2\">10.1364/cleo.2009.ctuaa2</a>.","apa":"Koukourakis, N., Kasseck, C., Gerhardt, N. C., Hofmann, M., Rytz, D., Köber, S., Salvador, M., &#38; Meerholz, K. (2009). New concepts for depth resolved holographic imaging based on spectrally tunable diode lasers. <i>Conference on Lasers and Electro-Optics, 2009 and 2009 Quantum Electronics and Laser Science Conference</i>, 1253–1254. <a href=\"https://doi.org/10.1364/cleo.2009.ctuaa2\">https://doi.org/10.1364/cleo.2009.ctuaa2</a>","short":"N. Koukourakis, C. Kasseck, N.C. Gerhardt, M. Hofmann, D. Rytz, S. Köber, M. Salvador, K. 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Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate. In: <i>Group IV Photonics</i>. ; 2009:199-201. doi:<a href=\"https://doi.org/10.1109/group4.2009.5338394\">10.1109/group4.2009.5338394</a>","apa":"Gerhardt, N. C., Kunert, B., Liebich, S., Zimprich, M., Zinnkann, S., Fritz, R., Volz, K., Stolz, W., Lange, C., Köster, N. S., Chatterjee, S. N., &#38; Rühle, W. W. (2009). Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate. <i>Group IV Photonics</i>, 199–201. <a href=\"https://doi.org/10.1109/group4.2009.5338394\">https://doi.org/10.1109/group4.2009.5338394</a>","short":"N.C. Gerhardt, B. Kunert, S. Liebich, M. Zimprich, S. Zinnkann, R. Fritz, K. Volz, W. Stolz, C. Lange, N.S. Köster, S.N. Chatterjee, W.W. 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Gerhardt <i>et al.</i>, “Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate,” in <i>Group IV Photonics</i>, 2009, pp. 199–201, doi: <a href=\"https://doi.org/10.1109/group4.2009.5338394\">10.1109/group4.2009.5338394</a>.","chicago":"Gerhardt, Nils Christopher, Bernadette Kunert, Siegfried Liebich, M. Zimprich, Steffen Zinnkann, R. Fritz, Kerstin Volz, et al. “Lasing of the III/V Compound Semiconductor Ga(NAsP) Integrated Lattice-Matched to Si Substrate.” In <i>Group IV Photonics</i>, 199–201, 2009. <a href=\"https://doi.org/10.1109/group4.2009.5338394\">https://doi.org/10.1109/group4.2009.5338394</a>."},"year":"2009","doi":"10.1109/group4.2009.5338394","title":"Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate","author":[{"full_name":"Gerhardt, Nils Christopher","id":"115298","orcid":"0009-0002-5538-231X","last_name":"Gerhardt","first_name":"Nils Christopher"},{"first_name":"Bernadette","full_name":"Kunert, Bernadette","last_name":"Kunert"},{"first_name":"Siegfried","last_name":"Liebich","full_name":"Liebich, Siegfried"},{"last_name":"Zimprich","full_name":"Zimprich, M.","first_name":"M."},{"full_name":"Zinnkann, Steffen","last_name":"Zinnkann","first_name":"Steffen"},{"last_name":"Fritz","full_name":"Fritz, R.","first_name":"R."},{"first_name":"Kerstin","full_name":"Volz, Kerstin","last_name":"Volz"},{"first_name":"Wolfgang","last_name":"Stolz","full_name":"Stolz, Wolfgang"},{"first_name":"Christoph","full_name":"Lange, Christoph","last_name":"Lange"},{"last_name":"Köster","full_name":"Köster, Niko S.","first_name":"Niko S."},{"last_name":"Chatterjee","full_name":"Chatterjee, Sati Nath","first_name":"Sati Nath"},{"last_name":"Rühle","full_name":"Rühle, Wolfgang W.","first_name":"Wolfgang W."}],"date_created":"2026-02-20T10:04:30Z","date_updated":"2026-02-20T10:40:43Z"},{"language":[{"iso":"eng"}],"_id":"64511","user_id":"15911","department":[{"_id":"977"}],"status":"public","type":"journal_article","publication":"Electronics letters","title":"Depth resolved holographic imaging with variable depth resolution using spectrally tunable diode laser","doi":"10.1049/el:20092390","date_updated":"2026-02-20T10:42:54Z","date_created":"2026-02-20T10:04:29Z","author":[{"full_name":"Koukourakis, Nektarios","last_name":"Koukourakis","first_name":"Nektarios"},{"first_name":"Martin","full_name":"Breede, Martin","last_name":"Breede"},{"first_name":"Nils Christopher","last_name":"Gerhardt","orcid":"0009-0002-5538-231X","full_name":"Gerhardt, Nils Christopher","id":"115298"},{"first_name":"Martin","full_name":"Hofmann, Martin","last_name":"Hofmann"},{"first_name":"Sebastian","last_name":"Köber","full_name":"Köber, Sebastian"},{"full_name":"Salvador, Michael","last_name":"Salvador","first_name":"Michael"},{"first_name":"Klaus","last_name":"Meerholz","full_name":"Meerholz, Klaus"}],"volume":45,"year":"2009","citation":{"ama":"Koukourakis N, Breede M, Gerhardt NC, et al. Depth resolved holographic imaging with variable depth resolution using spectrally tunable diode laser. <i>Electronics letters</i>. 2009;45(1):46-48. doi:<a href=\"https://doi.org/10.1049/el:20092390\">10.1049/el:20092390</a>","chicago":"Koukourakis, Nektarios, Martin Breede, Nils Christopher Gerhardt, Martin Hofmann, Sebastian Köber, Michael Salvador, and Klaus Meerholz. “Depth Resolved Holographic Imaging with Variable Depth Resolution Using Spectrally Tunable Diode Laser.” <i>Electronics Letters</i> 45, no. 1 (2009): 46–48. <a href=\"https://doi.org/10.1049/el:20092390\">https://doi.org/10.1049/el:20092390</a>.","ieee":"N. Koukourakis <i>et al.</i>, “Depth resolved holographic imaging with variable depth resolution using spectrally tunable diode laser,” <i>Electronics letters</i>, vol. 45, no. 1, pp. 46–48, 2009, doi: <a href=\"https://doi.org/10.1049/el:20092390\">10.1049/el:20092390</a>.","apa":"Koukourakis, N., Breede, M., Gerhardt, N. C., Hofmann, M., Köber, S., Salvador, M., &#38; Meerholz, K. (2009). Depth resolved holographic imaging with variable depth resolution using spectrally tunable diode laser. <i>Electronics Letters</i>, <i>45</i>(1), 46–48. <a href=\"https://doi.org/10.1049/el:20092390\">https://doi.org/10.1049/el:20092390</a>","bibtex":"@article{Koukourakis_Breede_Gerhardt_Hofmann_Köber_Salvador_Meerholz_2009, title={Depth resolved holographic imaging with variable depth resolution using spectrally tunable diode laser}, volume={45}, DOI={<a href=\"https://doi.org/10.1049/el:20092390\">10.1049/el:20092390</a>}, number={1}, journal={Electronics letters}, author={Koukourakis, Nektarios and Breede, Martin and Gerhardt, Nils Christopher and Hofmann, Martin and Köber, Sebastian and Salvador, Michael and Meerholz, Klaus}, year={2009}, pages={46–48} }","short":"N. Koukourakis, M. Breede, N.C. Gerhardt, M. Hofmann, S. Köber, M. Salvador, K. 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Kasseck <i>et al.</i>, “Three-dimensional bone imaging: optical coherence tomography versus micro computer tomography,” in <i>Optical coherence tomography and coherence techniques IV</i>, 2009, p. 73721B, doi: <a href=\"https://doi.org/10.1117/12.831814\">10.1117/12.831814</a>."},"language":[{"iso":"eng"}],"_id":"64523","department":[{"_id":"977"}],"user_id":"15911","status":"public","publication":"Optical coherence tomography and coherence techniques IV","type":"conference"},{"publication":"Optics express","type":"journal_article","status":"public","_id":"64521","department":[{"_id":"977"}],"user_id":"15911","language":[{"iso":"eng"}],"issue":"23","year":"2009","page":"21015 - 21029","intvolume":"        17","citation":{"mla":"Koukourakis, Nektarios, et al. “Single-Shot Holography for Depth Resolved Three Dimensional Imaging.” <i>Optics Express</i>, vol. 17, no. 23, 2009, pp. 21015–29, doi:<a href=\"https://doi.org/10.1364/oe.17.021015\">10.1364/oe.17.021015</a>.","short":"N. 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