@article{18632,
  abstract     = {{We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the
effective electron mass in the presence of strain.}},
  author       = {{Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}},
  issn         = {{1077-3118}},
  journal      = {{Applied Physics Letters}},
  number       = {{18}},
  publisher    = {{American Institute of Physics}},
  title        = {{{Measurement of effective electron mass in biaxial tensile strained silicon on insulator}}},
  doi          = {{10.1063/1.3254330}},
  volume       = {{95}},
  year         = {{2009}},
}