[{"type":"journal_article","status":"public","_id":"18632","department":[{"_id":"296"},{"_id":"170"},{"_id":"230"}],"user_id":"16199","article_type":"original","article_number":"182101","isi":"1","file_date_updated":"2020-08-30T15:29:43Z","publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"has_accepted_license":"1","publication_status":"published","intvolume":"        95","citation":{"ieee":"S. F. Feste <i>et al.</i>, “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” <i>Applied Physics Letters</i>, vol. 95, no. 18, Art. no. 182101, 2009, doi: <a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>.","chicago":"Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i> 95, no. 18 (2009). <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>.","ama":"Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>. 2009;95(18). doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>","apa":"Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., Schindlmayr, A., &#38; Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>, <i>95</i>(18), Article 182101. <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>","mla":"Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i>, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>.","bibtex":"@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }","short":"S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009)."},"oa":"1","date_updated":"2025-12-16T08:10:54Z","volume":95,"author":[{"last_name":"Feste","full_name":"Feste, Sebastian F.","first_name":"Sebastian F."},{"full_name":"Schäpers, Thomas","last_name":"Schäpers","first_name":"Thomas"},{"first_name":"Dan","full_name":"Buca, Dan","last_name":"Buca"},{"full_name":"Zhao, Qing Tai","last_name":"Zhao","first_name":"Qing Tai"},{"first_name":"Joachim","full_name":"Knoch, Joachim","last_name":"Knoch"},{"full_name":"Bouhassoune, Mohammed","last_name":"Bouhassoune","first_name":"Mohammed"},{"full_name":"Schindlmayr, Arno","id":"458","orcid":"0000-0002-4855-071X","last_name":"Schindlmayr","first_name":"Arno"},{"first_name":"Siegfried","last_name":"Mantl","full_name":"Mantl, Siegfried"}],"doi":"10.1063/1.3254330","publication":"Applied Physics Letters","abstract":[{"lang":"eng","text":"We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain."}],"file":[{"creator":"schindlm","file_name":"1.3254330.pdf","file_size":198836,"content_type":"application/pdf","date_created":"2020-08-28T22:28:31Z","date_updated":"2020-08-30T15:29:43Z","access_level":"open_access","file_id":"18633","description":"© 2009 American Institute of Physics","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","relation":"main_file"}],"external_id":{"isi":["000271666800034"]},"ddc":["530"],"language":[{"iso":"eng"}],"quality_controlled":"1","issue":"18","year":"2009","publisher":"American Institute of Physics","date_created":"2020-08-28T22:24:30Z","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator"}]