[{"publication":"Applied Physics Letters","issue":"18","abstract":[{"text":"We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain.","lang":"eng"}],"file":[{"file_id":"18633","content_type":"application/pdf","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","file_name":"1.3254330.pdf","file_size":198836,"access_level":"open_access","relation":"main_file","date_updated":"2020-08-30T15:29:43Z","date_created":"2020-08-28T22:28:31Z","description":"© 2009 American Institute of Physics","creator":"schindlm"}],"date_created":"2020-08-28T22:24:30Z","type":"journal_article","department":[{"_id":"296"},{"_id":"170"},{"_id":"230"}],"title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","year":"2009","publication_identifier":{"eissn":["1077-3118"],"issn":["0003-6951"]},"author":[{"first_name":"Sebastian F.","last_name":"Feste","full_name":"Feste, Sebastian F."},{"first_name":"Thomas","last_name":"Schäpers","full_name":"Schäpers, Thomas"},{"last_name":"Buca","first_name":"Dan","full_name":"Buca, Dan"},{"full_name":"Zhao, Qing Tai","first_name":"Qing Tai","last_name":"Zhao"},{"first_name":"Joachim","last_name":"Knoch","full_name":"Knoch, Joachim"},{"full_name":"Bouhassoune, Mohammed","last_name":"Bouhassoune","first_name":"Mohammed"},{"full_name":"Schindlmayr, Arno","first_name":"Arno","orcid":"0000-0002-4855-071X","last_name":"Schindlmayr","id":"458"},{"full_name":"Mantl, Siegfried","first_name":"Siegfried","last_name":"Mantl"}],"date_updated":"2025-12-16T08:10:54Z","publication_status":"published","intvolume":"        95","article_type":"original","article_number":"182101","language":[{"iso":"eng"}],"doi":"10.1063/1.3254330","file_date_updated":"2020-08-30T15:29:43Z","isi":"1","citation":{"chicago":"Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i> 95, no. 18 (2009). <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>.","ama":"Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>. 2009;95(18). doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>","short":"S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).","bibtex":"@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }","mla":"Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i>, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>.","apa":"Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., Schindlmayr, A., &#38; Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>, <i>95</i>(18), Article 182101. <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>","ieee":"S. F. Feste <i>et al.</i>, “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” <i>Applied Physics Letters</i>, vol. 95, no. 18, Art. no. 182101, 2009, doi: <a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>."},"quality_controlled":"1","external_id":{"isi":["000271666800034"]},"oa":"1","status":"public","has_accepted_license":"1","publisher":"American Institute of Physics","_id":"18632","ddc":["530"],"user_id":"16199","volume":95}]