@article{24407,
  abstract     = {{A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.}},
  author       = {{Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}},
  issn         = {{1557-9670}},
  journal      = {{Microwave Theory and Techniques, IEEE Transactions on}},
  number       = {{8}},
  pages        = {{2524--2531}},
  title        = {{{A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier}}},
  doi          = {{10.1109/TMTT.2012.2203143}},
  volume       = {{60}},
  year         = {{2012}},
}