[{"issue":"8","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6227312","relation":"confirmation"}]},"publication_identifier":{"eissn":["1557-9670"]},"citation":{"apa":"Ostrovskyy, P., Gustat, H., Ortmanns, M., &#38; Scheytt, C. (2012). A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2524–2531. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>","mla":"Ostrovskyy, Philip, et al. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2012, pp. 2524–31, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>.","short":"P. Ostrovskyy, H. Gustat, M. Ortmanns, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On 60 (2012) 2524–2531.","bibtex":"@article{Ostrovskyy_Gustat_Ortmanns_Scheytt_2012, title={A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier}, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}, year={2012}, pages={2524–2531} }","chicago":"Ostrovskyy, Philip, Hans Gustat, Maurits Ortmanns, and Christoph Scheytt. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2012): 2524–31. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>.","ieee":"P. Ostrovskyy, H. Gustat, M. Ortmanns, and C. Scheytt, “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2524–2531, 2012, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>.","ama":"Ostrovskyy P, Gustat H, Ortmanns M, Scheytt C. A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;60(8):2524-2531. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>"},"intvolume":"        60","page":"2524-2531","year":"2012","author":[{"last_name":"Ostrovskyy","full_name":"Ostrovskyy, Philip","first_name":"Philip"},{"last_name":"Gustat","full_name":"Gustat, Hans","first_name":"Hans"},{"first_name":"Maurits","full_name":"Ortmanns, Maurits","last_name":"Ortmanns"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}],"date_created":"2021-09-14T12:54:46Z","volume":60,"date_updated":"2022-01-06T06:56:20Z","doi":"10.1109/TMTT.2012.2203143","title":"A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier","type":"journal_article","publication":"Microwave Theory and Techniques, IEEE Transactions on","status":"public","abstract":[{"text":"A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.","lang":"eng"}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24407","language":[{"iso":"eng"}]}]