@article{18470,
  abstract     = {{Using ab initio computational methods, we study the structural and electronic properties of strained silicon, which has emerged as a promising technology to improve the performance of silicon-based metal-oxide-semiconductor field-effect transistors. In particular, higher electron mobilities are observed in n-doped samples with monoclinic strain along the [110] direction, and experimental evidence relates this to changes in the effective mass as well as the scattering rates. To assess the relative importance of these two factors, we combine density-functional theory in the local-density approximation with the GW approximation for the electronic self-energy and investigate the effect of uniaxial and biaxial strains along the [110] direction on the structural and electronic properties of Si. Longitudinal and transverse components of the electron effective mass as a function of the strain are derived from fits to the quasiparticle band structure and a diagonalization of the full effective-mass tensor. The changes in the effective masses and the energy splitting of the conduction-band valleys for uniaxial and biaxial strains as well as their impact on the electron mobility are analyzed. The self-energy corrections within GW lead to band gaps in excellent agreement with experimental measurements and slightly larger effective masses than in the local-density approximation.}},
  author       = {{Bouhassoune, Mohammed and Schindlmayr, Arno}},
  issn         = {{1687-8124}},
  journal      = {{Advances in Condensed Matter Physics}},
  publisher    = {{Hindawi}},
  title        = {{{Ab initio study of strain effects on the quasiparticle bands and effective masses in silicon}}},
  doi          = {{10.1155/2015/453125}},
  volume       = {{2015}},
  year         = {{2015}},
}