@inproceedings{44291,
  abstract     = {{Summary form only given. The numerical investigations are based on a microscopic many-body theory which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of homogeneous electric fields applied in the growth direction. The THz-emission due to the field-driven dynamics of photoexcited carriers is investigated for the combined action of static and alternating fields. For a driving field it was shown within a simple model that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon-assisted tunneling between Wannier-Stark states.}},
  author       = {{Meier, Torsten and Thomas, P. and Koch, S.W.}},
  booktitle    = {{Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference}},
  isbn         = {{1-55752-576-X}},
  location     = {{Baltimore, MD, USA}},
  pages        = {{218--219}},
  publisher    = {{IEEE}},
  title        = {{{THz-emission from photoexcited semiconductor superlattices with applied ac and dc electric fields}}},
  doi          = {{10.1109/QELS.1999.807564}},
  year         = {{1992}},
}

@inproceedings{44290,
  abstract     = {{Summary form only given. For a proper understanding of nonlinear optical experiments in semiconductors even the low-density limit Coulomb-induced many body correlations beyond the Hartree-Fock decoupling scheme need to be considered. In the coherent X(3) limit these correlations manifest themselves in the contributions of bound and unbound two-exciton states to the optical response. The understanding of nonlinear excitonic effects in the Stark effect of semiconductors including carrier-correlations is still of fundamental interest.}},
  author       = {{Meier, Torsten and Sieh, C. and Koch, S.W. and Brick, P. and Hubner, M. and Ell, C. and Prineas, J. and Khitrova, G. and Gibbs, H.M.}},
  booktitle    = {{Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference}},
  isbn         = {{1-55752-576-X}},
  location     = {{Baltimore, MD, USA}},
  pages        = {{14--15}},
  publisher    = {{IEEE}},
  title        = {{{Influence of carrier-correlations on the optical Stark effect of semiconductors}}},
  doi          = {{10.1109/QELS.1999.807099}},
  year         = {{1992}},
}