@inbook{43598,
  abstract     = {{Since the realization of semiconductor heterostructures vertical transport of electrically injected carriers has been one of the most interesting topics in semiconductor physics. Precise engineering of semiconductor layers and thus electronic energy levels allows the tailoring of transport properties over a wide range and has even led to the invention of semiconductor devices relying on ballistic electron transport. In addition, negative differential resistance (NDR) can be realized by using tunneling diodes containing double-barrier heterostructures or a superlattice structure.5,6 Actually, the proposal of Esaki and Tsu5 to use electronic Bloch oscillations in the miniband of a semiconductor superlattice to realize NDR marked the starting point for the physics and applications of semiconductor heterostructures.}},
  author       = {{Meier, Torsten and Feldmann, J. and von Plessen, G. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Miller, D.A.B. and Cunningham, J.E.}},
  booktitle    = {{Coherent Optical Interactions in Semiconductors}},
  editor       = {{Phillips, R.T.}},
  isbn         = {{978-1-4757-9750-3}},
  pages        = {{223--244}},
  publisher    = {{Springer-Science+Business Media}},
  title        = {{{Vertical transport studied by sub-picosecond four-wave mixing experiments}}},
  doi          = {{10.1007/978-1-4757-9748-0_10}},
  year         = {{1994}},
}