[{"publisher":"IEEE","date_updated":"2025-02-13T12:08:28Z","author":[{"first_name":"Liang","id":"30401","full_name":"Wu, Liang","last_name":"Wu"},{"full_name":"Weizel, Maxim","id":"44271","orcid":"https://orcid.org/0000-0003-2699-9839","last_name":"Weizel","first_name":"Maxim"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","orcid":"0000-0002-5950-6618 "}],"date_created":"2021-09-09T11:50:12Z","title":"Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology","doi":"10.1109/ISCAS45731.2020.9180947","conference":{"end_date":"2020.10.14","start_date":"2020.10.12"},"publication_identifier":{"isbn":["978-1-7281-3320-1"],"issn":["2158-1525 "]},"place":"Sevilla, Spain","year":"2020","citation":{"bibtex":"@inproceedings{Wu_Weizel_Scheytt_2020, place={Sevilla, Spain}, title={Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology}, DOI={<a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">10.1109/ISCAS45731.2020.9180947</a>}, booktitle={2020 IEEE International Symposium on Circuits and Systems (ISCAS)}, publisher={IEEE}, author={Wu, Liang and Weizel, Maxim and Scheytt, Christoph}, year={2020} }","mla":"Wu, Liang, et al. “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” <i>2020 IEEE International Symposium on Circuits and Systems (ISCAS)</i>, IEEE, 2020, doi:<a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">10.1109/ISCAS45731.2020.9180947</a>.","short":"L. Wu, M. Weizel, C. Scheytt, in: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), IEEE, Sevilla, Spain, 2020.","apa":"Wu, L., Weizel, M., &#38; Scheytt, C. (2020). Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. <i>2020 IEEE International Symposium on Circuits and Systems (ISCAS)</i>. <a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">https://doi.org/10.1109/ISCAS45731.2020.9180947</a>","ieee":"L. Wu, M. Weizel, and C. Scheytt, “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology,” 2020, doi: <a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">10.1109/ISCAS45731.2020.9180947</a>.","chicago":"Wu, Liang, Maxim Weizel, and Christoph Scheytt. “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” In <i>2020 IEEE International Symposium on Circuits and Systems (ISCAS)</i>. Sevilla, Spain: IEEE, 2020. <a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">https://doi.org/10.1109/ISCAS45731.2020.9180947</a>.","ama":"Wu L, Weizel M, Scheytt C. Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. In: <i>2020 IEEE International Symposium on Circuits and Systems (ISCAS)</i>. IEEE; 2020. doi:<a href=\"https://doi.org/10.1109/ISCAS45731.2020.9180947\">10.1109/ISCAS45731.2020.9180947</a>"},"_id":"24021","department":[{"_id":"58"}],"user_id":"44271","language":[{"iso":"eng"}],"publication":"2020 IEEE International Symposium on Circuits and Systems (ISCAS)","type":"conference","abstract":[{"text":"This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits both large- and small-signal bandwidth exeeding 60 GHz. It achieves an effective number of bits (ENOB) of 7 bit at 34 GHz input frequency and an ENOB of >5 bit over the whole input frequency bandwidth at sampling rate of 10 GS/s. Much higher sampling rates are possible but lead to somewhat worse performance. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 78 mA from a -4.8 V supply voltage, dissipating 375 mW.","lang":"eng"}],"status":"public"}]