@inproceedings{4546, abstract = {{Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.}}, author = {{Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}}, booktitle = {{2011 Semiconductor Conference Dresden}}, isbn = {{9781457704314}}, location = {{Dresden, Germany}}, publisher = {{IEEE}}, title = {{{Characterization of SiON integrated waveguides via FTIR and AFM measurements}}}, doi = {{10.1109/scd.2011.6068744}}, year = {{2011}}, }