---
_id: '4546'
abstract:
- lang: eng
  text: Silicon oxynitride (SiON) layers for telecommunication device application
    are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas
    compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride
    films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic
    Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow
    and enhancement of the PECVD deposition temperature, the absorption loss due to
    NH bands can be nearly completely erased. Furthermore the surface roughness can
    be reduced by decreasing the gas flow and rising the deposition temperature. First
    waveguide structures are introduced and their characterization is presented.
author:
- first_name: Torsten
  full_name: Frers, Torsten
  last_name: Frers
- first_name: Thomas
  full_name: Hett, Thomas
  last_name: Hett
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  last_name: Hilleringmann
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Alex
  full_name: Widhalm, Alex
  last_name: Widhalm
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: 'Frers T, Hett T, Hilleringmann U, Berth G, Widhalm A, Zrenner A. Characterization
    of SiON integrated waveguides via FTIR and AFM measurements. In: <i>2011 Semiconductor
    Conference Dresden</i>. IEEE; 2011. doi:<a href="https://doi.org/10.1109/scd.2011.6068744">10.1109/scd.2011.6068744</a>'
  apa: 'Frers, T., Hett, T., Hilleringmann, U., Berth, G., Widhalm, A., &#38; Zrenner,
    A. (2011). Characterization of SiON integrated waveguides via FTIR and AFM measurements.
    In <i>2011 Semiconductor Conference Dresden</i>. Dresden, Germany: IEEE. <a href="https://doi.org/10.1109/scd.2011.6068744">https://doi.org/10.1109/scd.2011.6068744</a>'
  bibtex: '@inproceedings{Frers_Hett_Hilleringmann_Berth_Widhalm_Zrenner_2011, title={Characterization
    of SiON integrated waveguides via FTIR and AFM measurements}, DOI={<a href="https://doi.org/10.1109/scd.2011.6068744">10.1109/scd.2011.6068744</a>},
    booktitle={2011 Semiconductor Conference Dresden}, publisher={IEEE}, author={Frers,
    Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm,
    Alex and Zrenner, Artur}, year={2011} }'
  chicago: Frers, Torsten, Thomas Hett, Ulrich Hilleringmann, Gerhard Berth, Alex
    Widhalm, and Artur Zrenner. “Characterization of SiON Integrated Waveguides via
    FTIR and AFM Measurements.” In <i>2011 Semiconductor Conference Dresden</i>. IEEE,
    2011. <a href="https://doi.org/10.1109/scd.2011.6068744">https://doi.org/10.1109/scd.2011.6068744</a>.
  ieee: T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, and A. Zrenner,
    “Characterization of SiON integrated waveguides via FTIR and AFM measurements,”
    in <i>2011 Semiconductor Conference Dresden</i>, Dresden, Germany, 2011.
  mla: Frers, Torsten, et al. “Characterization of SiON Integrated Waveguides via
    FTIR and AFM Measurements.” <i>2011 Semiconductor Conference Dresden</i>, IEEE,
    2011, doi:<a href="https://doi.org/10.1109/scd.2011.6068744">10.1109/scd.2011.6068744</a>.
  short: 'T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in:
    2011 Semiconductor Conference Dresden, IEEE, 2011.'
conference:
  end_date: 2011-09-28
  location: Dresden, Germany
  name: 2011 Semiconductor Conference Dresden
  start_date: 2011-09-27
date_created: 2018-09-20T11:44:50Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1109/scd.2011.6068744
language:
- iso: eng
publication: 2011 Semiconductor Conference Dresden
publication_identifier:
  isbn:
  - '9781457704314'
publication_status: published
publisher: IEEE
status: public
title: Characterization of SiON integrated waveguides via FTIR and AFM measurements
type: conference
user_id: '49428'
year: '2011'
...