[{"publisher":"Optical Society of America","_id":"4312","user_id":"49063","ddc":["530"],"conference":{"location":"Baltimore, Maryland (USA)","name":"Qantum Electronics and Laser Science","start_date":"2011-05-01","end_date":"2011-05-06"},"status":"public","has_accepted_license":"1","citation":{"ieee":"M. Pochwala, H. T. Duc, J. Förstner, and T. Meier, “Intensity dependence of optically-induced injection currents in semiconductor quantum wells,” presented at the Qantum Electronics and Laser Science, Baltimore, Maryland (USA), 2011, doi: <a href=\"https://doi.org/10.1364/qels.2011.qmk4\">10.1364/qels.2011.qmk4</a>.","apa":"Pochwala, M., Duc, H. T., Förstner, J., &#38; Meier, T. (2011). Intensity dependence of optically-induced injection currents in semiconductor quantum wells. <i>CLEO:2011 - Laser Applications to Photonic Applications</i>, Article QMK4. Qantum Electronics and Laser Science, Baltimore, Maryland (USA). <a href=\"https://doi.org/10.1364/qels.2011.qmk4\">https://doi.org/10.1364/qels.2011.qmk4</a>","short":"M. Pochwala, H.T. Duc, J. Förstner, T. Meier, in: CLEO:2011 - Laser Applications to Photonic Applications, Optical Society of America, 2011.","chicago":"Pochwala, Michal, Huynh Thanh Duc, Jens Förstner, and Torsten Meier. “Intensity Dependence of Optically-Induced Injection Currents in Semiconductor Quantum Wells.” In <i>CLEO:2011 - Laser Applications to Photonic Applications</i>. Optical Society of America, 2011. <a href=\"https://doi.org/10.1364/qels.2011.qmk4\">https://doi.org/10.1364/qels.2011.qmk4</a>.","mla":"Pochwala, Michal, et al. “Intensity Dependence of Optically-Induced Injection Currents in Semiconductor Quantum Wells.” <i>CLEO:2011 - Laser Applications to Photonic Applications</i>, QMK4, Optical Society of America, 2011, doi:<a href=\"https://doi.org/10.1364/qels.2011.qmk4\">10.1364/qels.2011.qmk4</a>.","bibtex":"@inproceedings{Pochwala_Duc_Förstner_Meier_2011, title={Intensity dependence of optically-induced injection currents in semiconductor quantum wells}, DOI={<a href=\"https://doi.org/10.1364/qels.2011.qmk4\">10.1364/qels.2011.qmk4</a>}, number={QMK4}, booktitle={CLEO:2011 - Laser Applications to Photonic Applications}, publisher={Optical Society of America}, author={Pochwala, Michal and Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2011} }","ama":"Pochwala M, Duc HT, Förstner J, Meier T. Intensity dependence of optically-induced injection currents in semiconductor quantum wells. In: <i>CLEO:2011 - Laser Applications to Photonic Applications</i>. Optical Society of America; 2011. doi:<a href=\"https://doi.org/10.1364/qels.2011.qmk4\">10.1364/qels.2011.qmk4</a>"},"file_date_updated":"2018-08-30T09:02:35Z","language":[{"iso":"eng"}],"article_number":"QMK4","doi":"10.1364/qels.2011.qmk4","publication_identifier":{"issn":["2160-8989 "],"isbn":["9781557529107"]},"author":[{"first_name":"Michal","last_name":"Pochwala","full_name":"Pochwala, Michal"},{"full_name":"Duc, Huynh Thanh","last_name":"Duc","first_name":"Huynh Thanh"},{"full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","first_name":"Jens","last_name":"Förstner","id":"158"},{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344"}],"title":"Intensity dependence of optically-induced injection currents in semiconductor quantum wells","year":"2011","publication_status":"published","date_updated":"2023-04-19T10:47:00Z","date_created":"2018-08-30T08:58:26Z","file":[{"creator":"hclaudia","date_created":"2018-08-30T09:02:35Z","file_name":"2011 Pochwala,Duc,Förstner,Meier T_Intensity dependence of optically-induced injection currents in semiconductor quantum wells.pdf","file_size":908095,"access_level":"closed","relation":"main_file","date_updated":"2018-08-30T09:02:35Z","file_id":"4313","content_type":"application/pdf","success":1}],"department":[{"_id":"15"},{"_id":"293"},{"_id":"230"},{"_id":"170"}],"type":"conference","keyword":["tet_topic_qw"],"publication":"CLEO:2011 - Laser Applications to Photonic Applications","abstract":[{"lang":"eng","text":"The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained."}]}]