---
_id: '3950'
abstract:
- lang: eng
  text: "In the last decade, zinc blende structure III–V semiconductors have been
    increasingly utilized for the realization of high‐performance optoelectronic applications
    because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric
    fields. However, the integration of III–V devices on the Si platform commonly
    used for CMOS electronic \r\ncircuits still poses a challenge, due to the large
    densities of mismatch‐related defects in heteroepitaxial III–V layers grown on
    planar Si substrates. A promising method to obtain thin III–V layers of high crystalline
    quality is the growth on nanopatterned substrates. In this approach, defects can
    be effectively eliminated by elastic lattice relaxation in three \r\ndimensions
    or confined close to the substrate interface by using aspect‐ratio trapping masks.
    As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface
    of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole
    film patterned Si(001) substrate, where the threading defects are trapped at the
    SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better
    understanding of the interplay between mask shape, growth conditions and formation
    of coalescence defects during mask overgrowth in order to achieve thin device
    quality III–V layers"
author:
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: 'Riedl T, Lindner J. Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned
    Substrates. In: Nanai L, ed. <i>Nanoscaled Films and Layers</i>. InTech; 2017.
    doi:<a href="https://doi.org/10.5772/67572">10.5772/67572</a>'
  apa: Riedl, T., &#38; Lindner, J. (2017). Heteroepitaxy of III–V Zinc Blende Semiconductors
    on Nanopatterned Substrates. In L. Nanai (Ed.), <i>Nanoscaled Films and Layers</i>.
    InTech. <a href="https://doi.org/10.5772/67572">https://doi.org/10.5772/67572</a>
  bibtex: '@inbook{Riedl_Lindner_2017, title={Heteroepitaxy of III–V Zinc Blende Semiconductors
    on Nanopatterned Substrates}, DOI={<a href="https://doi.org/10.5772/67572">10.5772/67572</a>},
    booktitle={Nanoscaled Films and Layers}, publisher={InTech}, author={Riedl, Thomas
    and Lindner, Jörg}, editor={Nanai, L.Editor}, year={2017} }'
  chicago: Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors
    on Nanopatterned Substrates.” In <i>Nanoscaled Films and Layers</i>, edited by
    L. Nanai. InTech, 2017. <a href="https://doi.org/10.5772/67572">https://doi.org/10.5772/67572</a>.
  ieee: T. Riedl and J. Lindner, “Heteroepitaxy of III–V Zinc Blende Semiconductors
    on Nanopatterned Substrates,” in <i>Nanoscaled Films and Layers</i>, L. Nanai,
    Ed. InTech, 2017.
  mla: Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors
    on Nanopatterned Substrates.” <i>Nanoscaled Films and Layers</i>, edited by L.
    Nanai, InTech, 2017, doi:<a href="https://doi.org/10.5772/67572">10.5772/67572</a>.
  short: 'T. Riedl, J. Lindner, in: L. Nanai (Ed.), Nanoscaled Films and Layers, InTech,
    2017.'
date_created: 2018-08-20T13:09:20Z
date_updated: 2022-01-06T06:59:59Z
department:
- _id: '286'
- _id: '15'
doi: 10.5772/67572
editor:
- first_name: L.
  full_name: Nanai, L.
  last_name: Nanai
language:
- iso: eng
publication: Nanoscaled Films and Layers
publication_identifier:
  isbn:
  - '9789535131434'
  - '9789535131441'
publication_status: published
publisher: InTech
status: public
title: Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates
type: book_chapter
user_id: '55706'
year: '2017'
...