--- _id: '24980' abstract: - lang: eng text: We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials. author: - first_name: N. full_name: Gögh, N. last_name: Gögh - first_name: P. full_name: Thomas, P. last_name: Thomas - first_name: I. full_name: Kuznetsova, I. last_name: Kuznetsova - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: I. full_name: Varga, I. last_name: Varga citation: ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen der Physik. 2010;18(12):905-909. doi:10.1002/andp.20095211219' apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen Der Physik, 18(12), 905–909. https://doi.org/10.1002/andp.20095211219' bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, volume={18}, DOI={10.1002/andp.20095211219}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }' chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik 18, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.20095211219.' ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” Annalen der Physik, vol. 18, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.20095211219.' mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, vol. 18, no. 12, 2010, pp. 905–09, doi:10.1002/andp.20095211219.' short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik 18 (2010) 905–909. date_created: 2021-09-24T08:06:30Z date_updated: 2023-04-19T11:13:00Z department: - _id: '15' - _id: '170' - _id: '293' - _id: '230' doi: 10.1002/andp.20095211219 intvolume: ' 18' issue: '12' language: - iso: eng page: 905-909 publication: Annalen der Physik publication_identifier: issn: - 0003-3804 - 1521-3889 publication_status: published status: public title: 'Localization of excitons in weakly disordered semiconductor structures: A model study' type: journal_article user_id: '49063' volume: 18 year: '2010' ... --- _id: '23480' abstract: - lang: eng text: We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials. author: - first_name: N. full_name: Gögh, N. last_name: Gögh - first_name: P. full_name: Thomas, P. last_name: Thomas - first_name: I. full_name: Kuznetsova, I. last_name: Kuznetsova - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: I. full_name: Varga, I. last_name: Varga citation: ama: 'Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen der Physik. 2010;(12):905-909. doi:10.1002/andp.200910382' apa: 'Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen Der Physik, 12, 905–909. https://doi.org/10.1002/andp.200910382' bibtex: '@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={10.1002/andp.200910382}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }' chicago: 'Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, no. 12 (2010): 905–9. https://doi.org/10.1002/andp.200910382.' ieee: 'N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” Annalen der Physik, no. 12, pp. 905–909, 2010, doi: 10.1002/andp.200910382.' mla: 'Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, no. 12, 2010, pp. 905–09, doi:10.1002/andp.200910382.' short: N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909. date_created: 2021-08-24T08:58:35Z date_updated: 2023-04-19T11:12:57Z department: - _id: '15' - _id: '170' - _id: '293' - _id: '230' doi: 10.1002/andp.200910382 issue: '12' language: - iso: eng page: 905-909 publication: Annalen der Physik publication_identifier: issn: - 0003-3804 - 1521-3889 publication_status: published status: public title: 'Localization of excitons in weakly disordered semiconductor structures: A model study' type: journal_article user_id: '49063' year: '2010' ...