@article{39729,
  author       = {{Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske, C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  keywords     = {{Physics and Astronomy (miscellaneous)}},
  number       = {{22}},
  publisher    = {{AIP Publishing}},
  title        = {{{Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules}}},
  doi          = {{10.1063/1.4722794}},
  volume       = {{100}},
  year         = {{2012}},
}

@article{39728,
  author       = {{Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and Kitzerow, Heinz-Siegfried}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  keywords     = {{Physics and Astronomy (miscellaneous)}},
  number       = {{5}},
  publisher    = {{AIP Publishing}},
  title        = {{{Electrical fine tuning of liquid crystal lasers}}},
  doi          = {{10.1063/1.4739840}},
  volume       = {{101}},
  year         = {{2012}},
}

@article{7697,
  author       = {{Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter, Dirk and Geller, M.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{22}},
  publisher    = {{AIP Publishing}},
  title        = {{{The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration}}},
  doi          = {{10.1063/1.3665070}},
  volume       = {{99}},
  year         = {{2011}},
}

@article{7710,
  author       = {{Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{10}},
  publisher    = {{AIP Publishing}},
  title        = {{{Mode-filtered electron injection into a waveguide interferometer}}},
  doi          = {{10.1063/1.3563714}},
  volume       = {{98}},
  year         = {{2011}},
}

@article{7711,
  author       = {{Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{8}},
  publisher    = {{AIP Publishing}},
  title        = {{{Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}}},
  doi          = {{10.1063/1.3553503}},
  volume       = {{98}},
  year         = {{2011}},
}

@article{7311,
  author       = {{Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and Wende, Heiko}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{5}},
  publisher    = {{AIP Publishing}},
  title        = {{{Room temperature spin relaxation length in spin light-emitting diodes}}},
  doi          = {{10.1063/1.3622662}},
  volume       = {{99}},
  year         = {{2011}},
}

@article{39735,
  author       = {{Lorenz, Alexander and Kitzerow, Heinz-Siegfried}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  keywords     = {{Physics and Astronomy (miscellaneous)}},
  number       = {{24}},
  publisher    = {{AIP Publishing}},
  title        = {{{Efficient electro-optic switching in a photonic liquid crystal fiber}}},
  doi          = {{10.1063/1.3599848}},
  volume       = {{98}},
  year         = {{2011}},
}

@article{59692,
  abstract     = {{<jats:p>We report spin-induced polarization oscillations in vertical-cavity surface-emitting lasers above threshold and at room temperature. The oscillation frequency is 11.6 GHz, which is significantly higher than the modulation bandwidth of less than 4 GHz in the device. The oscillation frequency is determined by an additional resonance frequency in birefringence containing microcavities, which is potentially much higher than the conventional relaxation oscillation frequency. The damping of the oscillations can be controlled by the current, allowing for oscillation lifetimes much longer than the spin lifetime in the device as well as for short bursts potentially interesting for information transmission.</jats:p>}},
  author       = {{Gerhardt, N. C. and Li, M. Y. and Jähme, H. and Höpfner, H. and Ackemann, T. and Hofmann, M. R.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{15}},
  publisher    = {{AIP Publishing}},
  title        = {{{Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers}}},
  doi          = {{10.1063/1.3651339}},
  volume       = {{99}},
  year         = {{2011}},
}

@article{7975,
  author       = {{Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{3}},
  publisher    = {{AIP Publishing}},
  title        = {{{Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}}},
  doi          = {{10.1063/1.3293445}},
  volume       = {{96}},
  year         = {{2010}},
}

@article{7980,
  author       = {{Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{3}},
  publisher    = {{AIP Publishing}},
  title        = {{{Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}}},
  doi          = {{10.1063/1.3293445}},
  volume       = {{96}},
  year         = {{2010}},
}

@article{7982,
  author       = {{Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Nanostructures in p-GaAs with improved tunability}}},
  doi          = {{10.1063/1.3463465}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{7983,
  author       = {{Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{6}},
  publisher    = {{AIP Publishing}},
  title        = {{{Full-wave rectification based upon hot-electron thermopower}}},
  doi          = {{10.1063/1.3475922}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{7990,
  author       = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{14}},
  publisher    = {{AIP Publishing}},
  title        = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}},
  doi          = {{10.1063/1.3488812}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{4550,
  abstract     = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}},
  author       = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{14}},
  publisher    = {{AIP Publishing}},
  title        = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}},
  doi          = {{10.1063/1.3488812}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{4194,
  abstract     = {{A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.}},
  author       = {{Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{25}},
  publisher    = {{AIP Publishing}},
  title        = {{{Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}}},
  doi          = {{10.1063/1.3455066}},
  volume       = {{96}},
  year         = {{2010}},
}

@article{7973,
  author       = {{Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}}},
  doi          = {{10.1063/1.3069281}},
  volume       = {{94}},
  year         = {{2009}},
}

@article{8579,
  author       = {{Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}}},
  doi          = {{10.1063/1.3069281}},
  year         = {{2009}},
}

@article{8580,
  author       = {{Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}}},
  doi          = {{10.1063/1.3072366}},
  year         = {{2009}},
}

@article{8585,
  author       = {{Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  title        = {{{Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}}},
  doi          = {{10.1063/1.3175724}},
  year         = {{2009}},
}

@article{18632,
  abstract     = {{We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the
effective electron mass in the presence of strain.}},
  author       = {{Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}},
  issn         = {{1077-3118}},
  journal      = {{Applied Physics Letters}},
  number       = {{18}},
  publisher    = {{American Institute of Physics}},
  title        = {{{Measurement of effective electron mass in biaxial tensile strained silicon on insulator}}},
  doi          = {{10.1063/1.3254330}},
  volume       = {{95}},
  year         = {{2009}},
}