[{"department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"date_created":"2023-01-24T18:39:05Z","publication":"Applied Physics Letters","issue":"22","doi":"10.1063/1.4722794","language":[{"iso":"eng"}],"article_number":"223301","intvolume":"       100","date_updated":"2023-01-24T18:39:34Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Atorf","first_name":"B.","full_name":"Atorf, B."},{"last_name":"Hoischen","first_name":"A.","full_name":"Hoischen, A."},{"full_name":"Ros, M. B.","last_name":"Ros","first_name":"M. B."},{"first_name":"N.","last_name":"Gimeno","full_name":"Gimeno, N."},{"first_name":"C.","last_name":"Tschierske","full_name":"Tschierske, C."},{"full_name":"Dantlgraber, G.","last_name":"Dantlgraber","first_name":"G."},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried"}],"year":"2012","title":"Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules","citation":{"short":"B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, H.-S. Kitzerow, Applied Physics Letters 100 (2012).","chicago":"Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” <i>Applied Physics Letters</i> 100, no. 22 (2012). <a href=\"https://doi.org/10.1063/1.4722794\">https://doi.org/10.1063/1.4722794</a>.","ieee":"B. Atorf <i>et al.</i>, “Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules,” <i>Applied Physics Letters</i>, vol. 100, no. 22, Art. no. 223301, 2012, doi: <a href=\"https://doi.org/10.1063/1.4722794\">10.1063/1.4722794</a>.","apa":"Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber, G., &#38; Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. <i>Applied Physics Letters</i>, <i>100</i>(22), Article 223301. <a href=\"https://doi.org/10.1063/1.4722794\">https://doi.org/10.1063/1.4722794</a>","bibtex":"@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012, title={Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules}, volume={100}, DOI={<a href=\"https://doi.org/10.1063/1.4722794\">10.1063/1.4722794</a>}, number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske, C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }","ama":"Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. <i>Applied Physics Letters</i>. 2012;100(22). doi:<a href=\"https://doi.org/10.1063/1.4722794\">10.1063/1.4722794</a>","mla":"Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” <i>Applied Physics Letters</i>, vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:<a href=\"https://doi.org/10.1063/1.4722794\">10.1063/1.4722794</a>."},"volume":100,"user_id":"254","_id":"39729","publisher":"AIP Publishing","status":"public"},{"doi":"10.1063/1.4739840","language":[{"iso":"eng"}],"article_number":"051117","intvolume":"       101","publication_status":"published","date_updated":"2023-01-24T18:38:50Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"Jürgen","last_name":"Schmidtke","full_name":"Schmidtke, Jürgen"},{"last_name":"Jünnemann","first_name":"Gisela","full_name":"Jünnemann, Gisela"},{"last_name":"Keuker-Baumann","first_name":"Susanne","full_name":"Keuker-Baumann, Susanne"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","last_name":"Kitzerow"}],"title":"Electrical fine tuning of liquid crystal lasers","year":"2012","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"date_created":"2023-01-24T18:38:22Z","publication":"Applied Physics Letters","issue":"5","volume":101,"user_id":"254","publisher":"AIP Publishing","_id":"39728","status":"public","citation":{"mla":"Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.” <i>Applied Physics Letters</i>, vol. 101, no. 5, 051117, AIP Publishing, 2012, doi:<a href=\"https://doi.org/10.1063/1.4739840\">10.1063/1.4739840</a>.","bibtex":"@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical fine tuning of liquid crystal lasers}, volume={101}, DOI={<a href=\"https://doi.org/10.1063/1.4739840\">10.1063/1.4739840</a>}, number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and Kitzerow, Heinz-Siegfried}, year={2012} }","ama":"Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning of liquid crystal lasers. <i>Applied Physics Letters</i>. 2012;101(5). doi:<a href=\"https://doi.org/10.1063/1.4739840\">10.1063/1.4739840</a>","ieee":"J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical fine tuning of liquid crystal lasers,” <i>Applied Physics Letters</i>, vol. 101, no. 5, Art. no. 051117, 2012, doi: <a href=\"https://doi.org/10.1063/1.4739840\">10.1063/1.4739840</a>.","apa":"Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., &#38; Kitzerow, H.-S. (2012). Electrical fine tuning of liquid crystal lasers. <i>Applied Physics Letters</i>, <i>101</i>(5), Article 051117. <a href=\"https://doi.org/10.1063/1.4739840\">https://doi.org/10.1063/1.4739840</a>","short":"J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics Letters 101 (2012).","chicago":"Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” <i>Applied Physics Letters</i> 101, no. 5 (2012). <a href=\"https://doi.org/10.1063/1.4739840\">https://doi.org/10.1063/1.4739840</a>."}},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-14T09:41:25Z","publication":"Applied Physics Letters","issue":"22","doi":"10.1063/1.3665070","article_number":"223510","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:44Z","publication_status":"published","intvolume":"        99","year":"2011","title":"The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration","author":[{"full_name":"Marquardt, B.","first_name":"B.","last_name":"Marquardt"},{"full_name":"Beckel, A.","last_name":"Beckel","first_name":"A."},{"first_name":"A.","last_name":"Lorke","full_name":"Lorke, A."},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"first_name":"M.","last_name":"Geller","full_name":"Geller, M."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"citation":{"bibtex":"@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration}, volume={99}, DOI={<a href=\"https://doi.org/10.1063/1.3665070\">10.1063/1.3665070</a>}, number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter, Dirk and Geller, M.}, year={2011} }","ama":"Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. <i>Applied Physics Letters</i>. 2011;99(22). doi:<a href=\"https://doi.org/10.1063/1.3665070\">10.1063/1.3665070</a>","mla":"Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” <i>Applied Physics Letters</i>, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3665070\">10.1063/1.3665070</a>.","chicago":"Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” <i>Applied Physics Letters</i> 99, no. 22 (2011). <a href=\"https://doi.org/10.1063/1.3665070\">https://doi.org/10.1063/1.3665070</a>.","short":"B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied Physics Letters 99 (2011).","ieee":"B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller, “The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration,” <i>Applied Physics Letters</i>, vol. 99, no. 22, 2011.","apa":"Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., &#38; Geller, M. (2011). The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. <i>Applied Physics Letters</i>, <i>99</i>(22). <a href=\"https://doi.org/10.1063/1.3665070\">https://doi.org/10.1063/1.3665070</a>"},"user_id":"42514","volume":99,"_id":"7697","publisher":"AIP Publishing","status":"public"},{"user_id":"42514","volume":98,"_id":"7710","publisher":"AIP Publishing","status":"public","citation":{"short":"S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics Letters 98 (2011).","chicago":"Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” <i>Applied Physics Letters</i> 98, no. 10 (2011). <a href=\"https://doi.org/10.1063/1.3563714\">https://doi.org/10.1063/1.3563714</a>.","apa":"Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., &#38; Fischer, S. F. (2011). Mode-filtered electron injection into a waveguide interferometer. <i>Applied Physics Letters</i>, <i>98</i>(10). <a href=\"https://doi.org/10.1063/1.3563714\">https://doi.org/10.1063/1.3563714</a>","ieee":"S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered electron injection into a waveguide interferometer,” <i>Applied Physics Letters</i>, vol. 98, no. 10, 2011.","ama":"Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron injection into a waveguide interferometer. <i>Applied Physics Letters</i>. 2011;98(10). doi:<a href=\"https://doi.org/10.1063/1.3563714\">10.1063/1.3563714</a>","bibtex":"@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered electron injection into a waveguide interferometer}, volume={98}, DOI={<a href=\"https://doi.org/10.1063/1.3563714\">10.1063/1.3563714</a>}, number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}, year={2011} }","mla":"Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” <i>Applied Physics Letters</i>, vol. 98, no. 10, 102111, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3563714\">10.1063/1.3563714</a>."},"doi":"10.1063/1.3563714","article_number":"102111","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:45Z","intvolume":"        98","year":"2011","title":"Mode-filtered electron injection into a waveguide interferometer","author":[{"full_name":"Buchholz, Sven S.","first_name":"Sven S.","last_name":"Buchholz"},{"last_name":"Kunze","first_name":"Ulrich","full_name":"Kunze, Ulrich"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"first_name":"Saskia F.","last_name":"Fischer","full_name":"Fischer, Saskia F."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-14T10:32:36Z","publication":"Applied Physics Letters","issue":"10"},{"user_id":"42514","volume":98,"_id":"7711","publisher":"AIP Publishing","status":"public","citation":{"short":"Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied Physics Letters 98 (2011).","chicago":"Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” <i>Applied Physics Letters</i> 98, no. 8 (2011). <a href=\"https://doi.org/10.1063/1.3553503\">https://doi.org/10.1063/1.3553503</a>.","ieee":"Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” <i>Applied Physics Letters</i>, vol. 98, no. 8, 2011.","apa":"Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., &#38; Bacher, G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. <i>Applied Physics Letters</i>, <i>98</i>(8). <a href=\"https://doi.org/10.1063/1.3553503\">https://doi.org/10.1063/1.3553503</a>","bibtex":"@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98}, DOI={<a href=\"https://doi.org/10.1063/1.3553503\">10.1063/1.3553503</a>}, number={8081911}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}, year={2011} }","ama":"Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. <i>Applied Physics Letters</i>. 2011;98(8). doi:<a href=\"https://doi.org/10.1063/1.3553503\">10.1063/1.3553503</a>","mla":"Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” <i>Applied Physics Letters</i>, vol. 98, no. 8, 081911, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3553503\">10.1063/1.3553503</a>."},"doi":"10.1063/1.3553503","article_number":"081911","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:45Z","publication_status":"published","intvolume":"        98","year":"2011","title":"Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Chen","first_name":"Y. S.","full_name":"Chen, Y. S."},{"last_name":"Huang","first_name":"J.","full_name":"Huang, J."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"G.","last_name":"Bacher","full_name":"Bacher, G."}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-14T10:33:23Z","issue":"8","publication":"Applied Physics Letters"},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-01-31T10:21:25Z","publication":"Applied Physics Letters","issue":"5","doi":"10.1063/1.3622662","language":[{"iso":"eng"}],"article_number":"051102","intvolume":"        99","date_updated":"2022-01-06T07:03:34Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"Henning","last_name":"Soldat","full_name":"Soldat, Henning"},{"first_name":"Mingyuan","last_name":"Li","full_name":"Li, Mingyuan"},{"first_name":"Nils C.","last_name":"Gerhardt","full_name":"Gerhardt, Nils C."},{"full_name":"Hofmann, Martin R.","last_name":"Hofmann","first_name":"Martin R."},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"},{"full_name":"Ebbing, Astrid","first_name":"Astrid","last_name":"Ebbing"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"first_name":"Frank","last_name":"Stromberg","full_name":"Stromberg, Frank"},{"full_name":"Keune, Werner","last_name":"Keune","first_name":"Werner"},{"full_name":"Wende, Heiko","first_name":"Heiko","last_name":"Wende"}],"year":"2011","title":"Room temperature spin relaxation length in spin light-emitting diodes","citation":{"bibtex":"@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et al._2011, title={Room temperature spin relaxation length in spin light-emitting diodes}, volume={99}, DOI={<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>}, number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }","chicago":"Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” <i>Applied Physics Letters</i> 99, no. 5 (2011). <a href=\"https://doi.org/10.1063/1.3622662\">https://doi.org/10.1063/1.3622662</a>.","ama":"Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length in spin light-emitting diodes. <i>Applied Physics Letters</i>. 2011;99(5). doi:<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>","short":"H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter, A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).","ieee":"H. Soldat <i>et al.</i>, “Room temperature spin relaxation length in spin light-emitting diodes,” <i>Applied Physics Letters</i>, vol. 99, no. 5, 2011.","mla":"Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” <i>Applied Physics Letters</i>, vol. 99, no. 5, 051102, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3622662\">10.1063/1.3622662</a>.","apa":"Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A., … Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting diodes. <i>Applied Physics Letters</i>, <i>99</i>(5). <a href=\"https://doi.org/10.1063/1.3622662\">https://doi.org/10.1063/1.3622662</a>"},"volume":99,"user_id":"42514","_id":"7311","publisher":"AIP Publishing","status":"public"},{"user_id":"254","volume":98,"publisher":"AIP Publishing","_id":"39735","status":"public","citation":{"ieee":"A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic liquid crystal fiber,” <i>Applied Physics Letters</i>, vol. 98, no. 24, Art. no. 241106, 2011, doi: <a href=\"https://doi.org/10.1063/1.3599848\">10.1063/1.3599848</a>.","apa":"Lorenz, A., &#38; Kitzerow, H.-S. (2011). Efficient electro-optic switching in a photonic liquid crystal fiber. <i>Applied Physics Letters</i>, <i>98</i>(24), Article 241106. <a href=\"https://doi.org/10.1063/1.3599848\">https://doi.org/10.1063/1.3599848</a>","chicago":"Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” <i>Applied Physics Letters</i> 98, no. 24 (2011). <a href=\"https://doi.org/10.1063/1.3599848\">https://doi.org/10.1063/1.3599848</a>.","short":"A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011).","mla":"Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” <i>Applied Physics Letters</i>, vol. 98, no. 24, 241106, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3599848\">10.1063/1.3599848</a>.","bibtex":"@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching in a photonic liquid crystal fiber}, volume={98}, DOI={<a href=\"https://doi.org/10.1063/1.3599848\">10.1063/1.3599848</a>}, number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }","ama":"Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid crystal fiber. <i>Applied Physics Letters</i>. 2011;98(24). doi:<a href=\"https://doi.org/10.1063/1.3599848\">10.1063/1.3599848</a>"},"doi":"10.1063/1.3599848","article_number":"241106","language":[{"iso":"eng"}],"date_updated":"2023-01-24T18:42:50Z","publication_status":"published","intvolume":"        98","title":"Efficient electro-optic switching in a photonic liquid crystal fiber","year":"2011","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Lorenz","first_name":"Alexander","full_name":"Lorenz, Alexander"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried"}],"keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"date_created":"2023-01-24T18:42:25Z","publication":"Applied Physics Letters","issue":"24"},{"status":"public","_id":"59692","publisher":"AIP Publishing","volume":99,"user_id":"15911","citation":{"ieee":"N. C. Gerhardt, M. Y. Li, H. Jähme, H. Höpfner, T. Ackemann, and M. R. Hofmann, “Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers,” <i>Applied Physics Letters</i>, vol. 99, no. 15, 2011, doi: <a href=\"https://doi.org/10.1063/1.3651339\">10.1063/1.3651339</a>.","mla":"Gerhardt, N. C., et al. “Ultrafast Spin-Induced Polarization Oscillations with Tunable Lifetime in Vertical-Cavity Surface-Emitting Lasers.” <i>Applied Physics Letters</i>, vol. 99, no. 15, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3651339\">10.1063/1.3651339</a>.","apa":"Gerhardt, N. C., Li, M. Y., Jähme, H., Höpfner, H., Ackemann, T., &#38; Hofmann, M. R. (2011). Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers. <i>Applied Physics Letters</i>, <i>99</i>(15). <a href=\"https://doi.org/10.1063/1.3651339\">https://doi.org/10.1063/1.3651339</a>","bibtex":"@article{Gerhardt_Li_Jähme_Höpfner_Ackemann_Hofmann_2011, title={Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers}, volume={99}, DOI={<a href=\"https://doi.org/10.1063/1.3651339\">10.1063/1.3651339</a>}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gerhardt, N. C. and Li, M. Y. and Jähme, H. and Höpfner, H. and Ackemann, T. and Hofmann, M. R.}, year={2011} }","short":"N.C. Gerhardt, M.Y. Li, H. Jähme, H. Höpfner, T. Ackemann, M.R. Hofmann, Applied Physics Letters 99 (2011).","ama":"Gerhardt NC, Li MY, Jähme H, Höpfner H, Ackemann T, Hofmann MR. Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers. <i>Applied Physics Letters</i>. 2011;99(15). doi:<a href=\"https://doi.org/10.1063/1.3651339\">10.1063/1.3651339</a>","chicago":"Gerhardt, N. C., M. Y. Li, H. Jähme, H. Höpfner, T. Ackemann, and M. R. Hofmann. “Ultrafast Spin-Induced Polarization Oscillations with Tunable Lifetime in Vertical-Cavity Surface-Emitting Lasers.” <i>Applied Physics Letters</i> 99, no. 15 (2011). <a href=\"https://doi.org/10.1063/1.3651339\">https://doi.org/10.1063/1.3651339</a>."},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Gerhardt, N. C.","first_name":"N. C.","last_name":"Gerhardt"},{"full_name":"Li, M. Y.","first_name":"M. Y.","last_name":"Li"},{"full_name":"Jähme, H.","last_name":"Jähme","first_name":"H."},{"full_name":"Höpfner, H.","last_name":"Höpfner","first_name":"H."},{"last_name":"Ackemann","first_name":"T.","full_name":"Ackemann, T."},{"full_name":"Hofmann, M. R.","first_name":"M. R.","last_name":"Hofmann"}],"year":"2011","title":"Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity surface-emitting lasers","intvolume":"        99","date_updated":"2026-02-25T14:01:28Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1063/1.3651339","issue":"15","publication":"Applied Physics Letters","abstract":[{"lang":"eng","text":"<jats:p>We report spin-induced polarization oscillations in vertical-cavity surface-emitting lasers above threshold and at room temperature. The oscillation frequency is 11.6 GHz, which is significantly higher than the modulation bandwidth of less than 4 GHz in the device. The oscillation frequency is determined by an additional resonance frequency in birefringence containing microcavities, which is potentially much higher than the conventional relaxation oscillation frequency. The damping of the oscillations can be controlled by the current, allowing for oscillation lifetimes much longer than the spin lifetime in the device as well as for short bursts potentially interesting for information transmission.</jats:p>"}],"date_created":"2025-04-25T10:19:38Z","department":[{"_id":"977"}],"type":"journal_article"},{"volume":96,"user_id":"42514","_id":"7975","publisher":"AIP Publishing","status":"public","citation":{"ama":"Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. <i>Applied Physics Letters</i>. 2010;96(3). doi:<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>","bibtex":"@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” <i>Applied Physics Letters</i>, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>.","chicago":"Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” <i>Applied Physics Letters</i> 96, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3293445\">https://doi.org/10.1063/1.3293445</a>.","short":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010).","apa":"Lei, W., Notthoff, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. <i>Applied Physics Letters</i>, <i>96</i>(3). <a href=\"https://doi.org/10.1063/1.3293445\">https://doi.org/10.1063/1.3293445</a>","ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” <i>Applied Physics Letters</i>, vol. 96, no. 3, 2010."},"doi":"10.1063/1.3293445","language":[{"iso":"eng"}],"article_number":"033111","intvolume":"        96","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Lei, W.","last_name":"Lei","first_name":"W."},{"first_name":"C.","last_name":"Notthoff","full_name":"Notthoff, C."},{"first_name":"A.","last_name":"Lorke","full_name":"Lorke, A."},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","year":"2010","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T13:32:39Z","issue":"3","publication":"Applied Physics Letters"},{"intvolume":"        96","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"W.","last_name":"Lei","full_name":"Lei, W."},{"first_name":"C.","last_name":"Notthoff","full_name":"Notthoff, C."},{"full_name":"Lorke, A.","last_name":"Lorke","first_name":"A."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"year":"2010","title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","doi":"10.1063/1.3293445","language":[{"iso":"eng"}],"article_number":"033111","issue":"3","publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T14:13:43Z","status":"public","volume":96,"user_id":"42514","publisher":"AIP Publishing","_id":"7980","citation":{"ama":"Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. <i>Applied Physics Letters</i>. 2010;96(3). doi:<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>","bibtex":"@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” <i>Applied Physics Letters</i>, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3293445\">10.1063/1.3293445</a>.","chicago":"Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” <i>Applied Physics Letters</i> 96, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3293445\">https://doi.org/10.1063/1.3293445</a>.","short":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010).","apa":"Lei, W., Notthoff, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. <i>Applied Physics Letters</i>, <i>96</i>(3). <a href=\"https://doi.org/10.1063/1.3293445\">https://doi.org/10.1063/1.3293445</a>","ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” <i>Applied Physics Letters</i>, vol. 96, no. 3, 2010."}},{"doi":"10.1063/1.3463465","article_number":"022110","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"        97","year":"2010","title":"Nanostructures in p-GaAs with improved tunability","author":[{"last_name":"Csontos","first_name":"M.","full_name":"Csontos, M."},{"last_name":"Komijani","first_name":"Y.","full_name":"Komijani, Y."},{"full_name":"Shorubalko, I.","first_name":"I.","last_name":"Shorubalko"},{"full_name":"Ensslin, K.","last_name":"Ensslin","first_name":"K."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T14:33:40Z","publication":"Applied Physics Letters","issue":"2","user_id":"42514","volume":97,"publisher":"AIP Publishing","_id":"7982","status":"public","citation":{"bibtex":"@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3463465\">10.1063/1.3463465</a>}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","ama":"Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. <i>Applied Physics Letters</i>. 2010;97(2). doi:<a href=\"https://doi.org/10.1063/1.3463465\">10.1063/1.3463465</a>","mla":"Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” <i>Applied Physics Letters</i>, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3463465\">10.1063/1.3463465</a>.","chicago":"Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” <i>Applied Physics Letters</i> 97, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3463465\">https://doi.org/10.1063/1.3463465</a>.","short":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010).","ieee":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” <i>Applied Physics Letters</i>, vol. 97, no. 2, 2010.","apa":"Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., &#38; Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. <i>Applied Physics Letters</i>, <i>97</i>(2). <a href=\"https://doi.org/10.1063/1.3463465\">https://doi.org/10.1063/1.3463465</a>"}},{"citation":{"mla":"Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” <i>Applied Physics Letters</i>, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3475922\">10.1063/1.3475922</a>.","bibtex":"@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3475922\">10.1063/1.3475922</a>}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","ama":"Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. <i>Applied Physics Letters</i>. 2010;97(6). doi:<a href=\"https://doi.org/10.1063/1.3475922\">10.1063/1.3475922</a>","ieee":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” <i>Applied Physics Letters</i>, vol. 97, no. 6, 2010.","apa":"Wiemann, M., Wieser, U., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. <i>Applied Physics Letters</i>, <i>97</i>(6). <a href=\"https://doi.org/10.1063/1.3475922\">https://doi.org/10.1063/1.3475922</a>","short":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010).","chicago":"Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” <i>Applied Physics Letters</i> 97, no. 6 (2010). <a href=\"https://doi.org/10.1063/1.3475922\">https://doi.org/10.1063/1.3475922</a>."},"status":"public","_id":"7983","publisher":"AIP Publishing","volume":97,"user_id":"42514","publication":"Applied Physics Letters","issue":"6","date_created":"2019-02-21T14:34:50Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","author":[{"last_name":"Wiemann","first_name":"M.","full_name":"Wiemann, M."},{"full_name":"Wieser, U.","first_name":"U.","last_name":"Wieser"},{"last_name":"Kunze","first_name":"U.","full_name":"Kunze, U."},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Full-wave rectification based upon hot-electron thermopower","year":"2010","intvolume":"        97","date_updated":"2022-01-06T07:03:48Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"062112","doi":"10.1063/1.3475922"},{"year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"M.","last_name":"Mehta","full_name":"Mehta, M."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"last_name":"Zrenner","first_name":"A.","full_name":"Zrenner, A."},{"first_name":"C.","last_name":"Meier","full_name":"Meier, C."}],"date_updated":"2022-01-06T07:03:48Z","publication_status":"published","intvolume":"        97","article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","issue":"14","publication":"Applied Physics Letters","date_created":"2019-02-21T14:41:19Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"status":"public","_id":"7990","publisher":"AIP Publishing","user_id":"42514","volume":97,"citation":{"short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>."}},{"status":"public","_id":"4550","publisher":"AIP Publishing","user_id":"20798","volume":97,"citation":{"mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010)."},"year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"},{"id":"20798","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2022-01-06T07:01:09Z","publication_status":"published","intvolume":"        97","article_type":"original","article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","publication":"Applied Physics Letters","issue":"14","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}],"date_created":"2018-09-20T12:38:51Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}]},{"file_date_updated":"2018-08-28T11:58:27Z","citation":{"bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>"},"has_accepted_license":"1","status":"public","user_id":"55706","ddc":["530"],"volume":96,"publisher":"AIP Publishing","_id":"4194","abstract":[{"text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.","lang":"eng"}],"publication":"Applied Physics Letters","issue":"25","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"creator":"hclaudia","date_created":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","file_size":277385,"access_level":"closed","relation":"main_file","date_updated":"2018-08-28T11:58:27Z","file_id":"4195","content_type":"application/pdf","success":1}],"date_created":"2018-08-28T11:56:08Z","publication_status":"published","date_updated":"2022-01-06T07:00:33Z","article_type":"original","intvolume":"        96","year":"2010","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"E.","last_name":"Tschumak","full_name":"Tschumak, E."},{"full_name":"Granzner, R.","last_name":"Granzner","first_name":"R."},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"first_name":"F.","last_name":"Schwierz","full_name":"Schwierz, F."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"first_name":"H.","last_name":"Nagasawa","full_name":"Nagasawa, H."},{"full_name":"Abe, M.","first_name":"M.","last_name":"Abe"},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"}],"doi":"10.1063/1.3455066","article_number":"253501","language":[{"iso":"eng"}]},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T13:28:29Z","issue":"2","publication":"Applied Physics Letters","doi":"10.1063/1.3069281","language":[{"iso":"eng"}],"article_number":"022107","intvolume":"        94","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"S. S.","last_name":"Buchholz","full_name":"Buchholz, S. S."},{"full_name":"Fischer, S. F.","last_name":"Fischer","first_name":"S. F."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","year":"2009","citation":{"chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i> 94, no. 2 (2009). <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>.","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009).","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>, <i>94</i>(2). <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” <i>Applied Physics Letters</i>, vol. 94, no. 2, 2009.","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. 2009;94(2). doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>."},"volume":94,"user_id":"42514","_id":"7973","publisher":"AIP Publishing","status":"public"},{"publication":"Applied Physics Letters","citation":{"bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>.","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” <i>Applied Physics Letters</i>, 2009.","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 022107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>.","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-26T08:34:37Z","publication_status":"published","date_updated":"2022-01-06T07:03:57Z","year":"2009","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Buchholz","first_name":"S. S.","full_name":"Buchholz, S. S."},{"first_name":"S. F.","last_name":"Fischer","full_name":"Fischer, S. F."},{"full_name":"Kunze, U.","first_name":"U.","last_name":"Kunze"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"user_id":"42514","doi":"10.1063/1.3069281","article_number":"022107","_id":"8579","language":[{"iso":"eng"}]},{"user_id":"42514","doi":"10.1063/1.3072366","article_number":"023107","_id":"8580","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:57Z","title":"Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy","year":"2009","status":"public","author":[{"full_name":"Blokland, J. H.","last_name":"Blokland","first_name":"J. H."},{"full_name":"Bozkurt, M.","last_name":"Bozkurt","first_name":"M."},{"full_name":"Ulloa, J. M.","last_name":"Ulloa","first_name":"J. M."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"full_name":"Koenraad, P. M.","first_name":"P. M.","last_name":"Koenraad"},{"last_name":"Christianen","first_name":"P. C. M.","full_name":"Christianen, P. C. M."},{"full_name":"Maan, J. C.","last_name":"Maan","first_name":"J. C."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-26T08:42:07Z","publication":"Applied Physics Letters","citation":{"chicago":"Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3072366\">https://doi.org/10.1063/1.3072366</a>.","short":"J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).","apa":"Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3072366\">https://doi.org/10.1063/1.3072366</a>","ieee":"J. H. Blokland <i>et al.</i>, “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” <i>Applied Physics Letters</i>, 2009.","ama":"Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>","bibtex":"@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }","mla":"Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 023107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>."}},{"date_created":"2019-03-26T08:55:40Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","citation":{"ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” <i>Applied Physics Letters</i>, 2009.","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3175724\">https://doi.org/10.1063/1.3175724</a>","short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","chicago":"Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3175724\">https://doi.org/10.1063/1.3175724</a>.","mla":"Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” <i>Applied Physics Letters</i>, 022113, 2009, doi:<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>.","bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3175724\">10.1063/1.3175724</a>"},"article_number":"022113","language":[{"iso":"eng"}],"_id":"8585","doi":"10.1063/1.3175724","user_id":"42514","status":"public","title":"Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots","year":"2009","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Marquardt, B.","first_name":"B.","last_name":"Marquardt"},{"full_name":"Geller, M.","first_name":"M.","last_name":"Geller"},{"full_name":"Lorke, A.","last_name":"Lorke","first_name":"A."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"date_updated":"2022-01-06T07:03:57Z","publication_status":"published"},{"doi":"10.1063/1.3254330","article_number":"182101","language":[{"iso":"eng"}],"date_updated":"2025-12-16T08:10:54Z","publication_status":"published","intvolume":"        95","article_type":"original","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","year":"2009","publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"author":[{"full_name":"Feste, Sebastian F.","first_name":"Sebastian F.","last_name":"Feste"},{"full_name":"Schäpers, Thomas","last_name":"Schäpers","first_name":"Thomas"},{"first_name":"Dan","last_name":"Buca","full_name":"Buca, Dan"},{"first_name":"Qing Tai","last_name":"Zhao","full_name":"Zhao, Qing Tai"},{"full_name":"Knoch, Joachim","first_name":"Joachim","last_name":"Knoch"},{"first_name":"Mohammed","last_name":"Bouhassoune","full_name":"Bouhassoune, Mohammed"},{"id":"458","first_name":"Arno","last_name":"Schindlmayr","orcid":"0000-0002-4855-071X","full_name":"Schindlmayr, Arno"},{"full_name":"Mantl, Siegfried","first_name":"Siegfried","last_name":"Mantl"}],"type":"journal_article","department":[{"_id":"296"},{"_id":"170"},{"_id":"230"}],"file":[{"description":"© 2009 American Institute of Physics","date_created":"2020-08-28T22:28:31Z","creator":"schindlm","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","content_type":"application/pdf","file_id":"18633","date_updated":"2020-08-30T15:29:43Z","relation":"main_file","access_level":"open_access","file_size":198836,"file_name":"1.3254330.pdf"}],"date_created":"2020-08-28T22:24:30Z","abstract":[{"text":"We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain.","lang":"eng"}],"publication":"Applied Physics Letters","issue":"18","ddc":["530"],"user_id":"16199","volume":95,"_id":"18632","publisher":"American Institute of Physics","has_accepted_license":"1","status":"public","oa":"1","external_id":{"isi":["000271666800034"]},"quality_controlled":"1","file_date_updated":"2020-08-30T15:29:43Z","citation":{"mla":"Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i>, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>.","apa":"Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., Schindlmayr, A., &#38; Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>, <i>95</i>(18), Article 182101. <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>","ieee":"S. F. Feste <i>et al.</i>, “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” <i>Applied Physics Letters</i>, vol. 95, no. 18, Art. no. 182101, 2009, doi: <a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>.","chicago":"Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i> 95, no. 18 (2009). <a href=\"https://doi.org/10.1063/1.3254330\">https://doi.org/10.1063/1.3254330</a>.","ama":"Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>. 2009;95(18). doi:<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>","short":"S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).","bibtex":"@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={<a href=\"https://doi.org/10.1063/1.3254330\">10.1063/1.3254330</a>}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }"},"isi":"1"}]