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Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848","apa":"Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters, 98(24), Article 241106. https://doi.org/10.1063/1.3599848","ieee":"A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no. 241106, 2011, doi: 10.1063/1.3599848.","short":"A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011)."},"year":"2011","user_id":"254","volume":98,"date_created":"2023-01-24T18:42:25Z","status":"public","keyword":["Physics and Astronomy (miscellaneous)"],"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"last_name":"Lorenz","full_name":"Lorenz, Alexander","first_name":"Alexander"},{"id":"254","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"}],"doi":"10.1063/1.3599848","date_updated":"2023-01-24T18:42:50Z","language":[{"iso":"eng"}],"title":"Efficient electro-optic switching in a photonic liquid crystal fiber","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}]},{"doi":"10.1063/1.3293445","date_updated":"2022-01-06T07:03:48Z","language":[{"iso":"eng"}],"title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"issue":"3","article_number":"033111","_id":"7975","intvolume":" 96","type":"journal_article","year":"2010","citation":{"ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010.","short":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010).","mla":"Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.","bibtex":"@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. 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Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445."},"user_id":"42514","date_created":"2019-02-21T13:32:39Z","status":"public","volume":96,"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"last_name":"Lei","first_name":"W.","full_name":"Lei, W."},{"last_name":"Notthoff","first_name":"C.","full_name":"Notthoff, C."},{"last_name":"Lorke","first_name":"A.","full_name":"Lorke, A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. 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Reuter, A.D. Wieck, Applied Physics Letters 96 (2010).","ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010."},"year":"2010","issue":"3","article_number":"033111","intvolume":" 96","_id":"7980","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","language":[{"iso":"eng"}],"doi":"10.1063/1.3293445","date_updated":"2022-01-06T07:03:48Z"},{"title":"Nanostructures in p-GaAs with improved tunability","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:03:48Z","doi":"10.1063/1.3463465","language":[{"iso":"eng"}],"user_id":"42514","publication":"Applied Physics Letters","author":[{"last_name":"Csontos","first_name":"M.","full_name":"Csontos, M."},{"last_name":"Komijani","first_name":"Y.","full_name":"Komijani, Y."},{"last_name":"Shorubalko","full_name":"Shorubalko, I.","first_name":"I."},{"last_name":"Ensslin","first_name":"K.","full_name":"Ensslin, K."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"publisher":"AIP Publishing","volume":97,"date_created":"2019-02-21T14:33:40Z","status":"public","_id":"7982","intvolume":" 97","article_number":"022110","issue":"2","citation":{"short":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010).","ieee":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters, vol. 97, no. 2, 2010.","apa":"Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics Letters, 97(2). https://doi.org/10.1063/1.3463465","ama":"Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465","chicago":"Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465.","bibtex":"@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465."},"type":"journal_article","year":"2010"},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Full-wave rectification based upon hot-electron thermopower","language":[{"iso":"eng"}],"doi":"10.1063/1.3475922","date_updated":"2022-01-06T07:03:48Z","volume":97,"status":"public","date_created":"2019-02-21T14:34:50Z","publisher":"AIP Publishing","author":[{"last_name":"Wiemann","first_name":"M.","full_name":"Wiemann, M."},{"last_name":"Wieser","first_name":"U.","full_name":"Wieser, U."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication":"Applied Physics Letters","user_id":"42514","type":"journal_article","year":"2010","citation":{"bibtex":"@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:10.1063/1.3475922.","chicago":"Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters 97, no. 6 (2010). https://doi.org/10.1063/1.3475922.","ama":"Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. 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Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }"},"article_number":"143101","issue":"14","intvolume":" 97","_id":"7990","volume":97,"status":"public","date_created":"2019-02-21T14:41:19Z","author":[{"first_name":"M.","full_name":"Mehta, M.","last_name":"Mehta"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"full_name":"Zrenner, A.","first_name":"A.","last_name":"Zrenner"},{"full_name":"Meier, C.","first_name":"C.","last_name":"Meier"}],"publisher":"AIP Publishing","publication":"Applied Physics Letters","user_id":"42514","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","date_updated":"2022-01-06T07:03:48Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode"},{"language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","citation":{"ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010."},"type":"journal_article","year":"2010","issue":"14","article_number":"143101","intvolume":" 97","_id":"4550","date_created":"2018-09-20T12:38:51Z","status":"public","volume":97,"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","first_name":"Artur","id":"606","last_name":"Zrenner"},{"first_name":"Cedrik","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798"}],"user_id":"20798","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}],"article_type":"original"},{"title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"286"}],"doi":"10.1063/1.3455066","date_updated":"2022-01-06T07:00:33Z","language":[{"iso":"eng"}],"ddc":["530"],"user_id":"55706","abstract":[{"lang":"eng","text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"article_type":"original","volume":96,"date_created":"2018-08-28T11:56:08Z","status":"public","has_accepted_license":"1","file_date_updated":"2018-08-28T11:58:27Z","publication":"Applied Physics Letters","author":[{"last_name":"Tschumak","first_name":"E.","full_name":"Tschumak, E."},{"full_name":"Granzner, R.","first_name":"R.","last_name":"Granzner"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"},{"first_name":"F.","full_name":"Schwierz, F.","last_name":"Schwierz"},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."},{"first_name":"H.","full_name":"Nagasawa, H.","last_name":"Nagasawa"},{"first_name":"M.","full_name":"Abe, M.","last_name":"Abe"},{"last_name":"As","full_name":"As, Donald","first_name":"Donald"}],"publisher":"AIP Publishing","file":[{"date_created":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","access_level":"closed","file_id":"4195","creator":"hclaudia","file_size":277385,"relation":"main_file","success":1,"date_updated":"2018-08-28T11:58:27Z","content_type":"application/pdf"}],"article_number":"253501","issue":"25","_id":"4194","intvolume":" 96","citation":{"chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ieee":"E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010."},"type":"journal_article","year":"2010"},{"_id":"18632","intvolume":" 95","article_number":"182101","issue":"18","citation":{"short":"S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).","ieee":"S. F. Feste et al., “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” Applied Physics Letters, vol. 95, no. 18, 2009.","ama":"Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330","apa":"Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters, 95(18). https://doi.org/10.1063/1.3254330","chicago":"Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.","mla":"Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.","bibtex":"@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={10.1063/1.3254330}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }"},"year":"2009","type":"journal_article","abstract":[{"text":"We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain.","lang":"eng"}],"article_type":"original","ddc":["530"],"user_id":"458","file_date_updated":"2020-08-30T15:29:43Z","publication":"Applied Physics Letters","author":[{"last_name":"Feste","first_name":"Sebastian F.","full_name":"Feste, Sebastian F."},{"first_name":"Thomas","full_name":"Schäpers, Thomas","last_name":"Schäpers"},{"last_name":"Buca","first_name":"Dan","full_name":"Buca, Dan"},{"full_name":"Zhao, Qing Tai","first_name":"Qing Tai","last_name":"Zhao"},{"full_name":"Knoch, Joachim","first_name":"Joachim","last_name":"Knoch"},{"last_name":"Bouhassoune","full_name":"Bouhassoune, Mohammed","first_name":"Mohammed"},{"id":"458","last_name":"Schindlmayr","orcid":"0000-0002-4855-071X","full_name":"Schindlmayr, Arno","first_name":"Arno"},{"last_name":"Mantl","full_name":"Mantl, Siegfried","first_name":"Siegfried"}],"publisher":"American Institute of Physics","quality_controlled":"1","file":[{"access_level":"open_access","file_name":"1.3254330.pdf","date_created":"2020-08-28T22:28:31Z","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","file_size":198836,"relation":"main_file","description":"© 2009 American Institute of Physics","date_updated":"2020-08-30T15:29:43Z","content_type":"application/pdf","creator":"schindlm","file_id":"18633"}],"volume":95,"date_created":"2020-08-28T22:24:30Z","status":"public","has_accepted_license":"1","date_updated":"2022-01-06T06:53:49Z","doi":"10.1063/1.3254330","oa":"1","language":[{"iso":"eng"}],"external_id":{"isi":["000271666800034"]},"title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","department":[{"_id":"296"}],"isi":"1","publication_identifier":{"issn":["0003-6951"],"eissn":["1077-3118"]},"publication_status":"published"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","language":[{"iso":"eng"}],"doi":"10.1063/1.3069281","date_updated":"2022-01-06T07:03:48Z","date_created":"2019-02-21T13:28:29Z","status":"public","volume":94,"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"first_name":"S. S.","full_name":"Buchholz, S. S.","last_name":"Buchholz"},{"last_name":"Fischer","full_name":"Fischer, S. F.","first_name":"S. F."},{"last_name":"Kunze","full_name":"Kunze, U.","first_name":"U."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"user_id":"42514","type":"journal_article","citation":{"bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Buchholz, S. 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Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, vol. 94, no. 2, 2009.","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009)."},"year":"2009","issue":"2","article_number":"022107","intvolume":" 94","_id":"7973"},{"user_id":"42514","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","author":[{"last_name":"Buchholz","full_name":"Buchholz, S. S.","first_name":"S. S."},{"last_name":"Fischer","first_name":"S. F.","full_name":"Fischer, S. F."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"status":"public","date_created":"2019-03-26T08:34:37Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2022-01-06T07:03:57Z","_id":"8579","article_number":"022107","doi":"10.1063/1.3069281","language":[{"iso":"eng"}],"citation":{"ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009. doi:10.1063/1.3069281","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, 2009."},"year":"2009","type":"journal_article"},{"language":[{"iso":"eng"}],"type":"journal_article","year":"2009","citation":{"mla":"Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009, doi:10.1063/1.3072366.","bibtex":"@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={10.1063/1.3072366}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }","ama":"Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. 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Maan, Applied Physics Letters (2009)."},"date_updated":"2022-01-06T07:03:57Z","_id":"8580","doi":"10.1063/1.3072366","article_number":"023107","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"last_name":"Blokland","full_name":"Blokland, J. H.","first_name":"J. H."},{"first_name":"M.","full_name":"Bozkurt, M.","last_name":"Bozkurt"},{"last_name":"Ulloa","full_name":"Ulloa, J. M.","first_name":"J. M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"first_name":"P. M.","full_name":"Koenraad, P. M.","last_name":"Koenraad"},{"last_name":"Christianen","first_name":"P. C. M.","full_name":"Christianen, P. C. M."},{"last_name":"Maan","full_name":"Maan, J. C.","first_name":"J. C."}],"date_created":"2019-03-26T08:42:07Z","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","user_id":"42514","title":"Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"status":"public","date_created":"2019-03-26T08:55:40Z","author":[{"full_name":"Marquardt, B.","first_name":"B.","last_name":"Marquardt"},{"full_name":"Geller, M.","first_name":"M.","last_name":"Geller"},{"last_name":"Lorke","full_name":"Lorke, A.","first_name":"A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"title":"Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots","user_id":"42514","citation":{"apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724","chicago":"Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724.","bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724.","short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009."},"year":"2009","type":"journal_article","language":[{"iso":"eng"}],"article_number":"022113","doi":"10.1063/1.3175724","date_updated":"2022-01-06T07:03:57Z","_id":"8585"},{"language":[{"iso":"eng"}],"doi":"10.1063/1.2920439","date_updated":"2022-01-06T07:03:43Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"}],"title":"Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy","citation":{"bibtex":"@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }","mla":"Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.","chicago":"Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439.","ama":"Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439","apa":"Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439","ieee":"W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008.","short":"W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008)."},"type":"journal_article","year":"2008","issue":"19","article_number":"193111","_id":"7640","intvolume":" 92","date_created":"2019-02-13T11:30:23Z","status":"public","volume":92,"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"first_name":"W.","full_name":"Lei, W.","last_name":"Lei"},{"first_name":"M.","full_name":"Offer, M.","last_name":"Offer"},{"first_name":"A.","full_name":"Lorke, A.","last_name":"Lorke"},{"first_name":"C.","full_name":"Notthoff, C.","last_name":"Notthoff"},{"id":"20798","last_name":"Meier","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik"},{"last_name":"Wibbelhoff","first_name":"O.","full_name":"Wibbelhoff, O."},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"user_id":"20798","extern":"1"},{"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Lo","full_name":"Lo, F.-Y.","first_name":"F.-Y."},{"first_name":"A.","full_name":"Melnikov, A.","last_name":"Melnikov"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"Y.","full_name":"Cordier, Y.","last_name":"Cordier"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_created":"2019-03-26T09:26:36Z","status":"public","title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","user_id":"42514","type":"journal_article","year":"2008","citation":{"bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }","mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968.","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008)."},"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:57Z","_id":"8603","doi":"10.1063/1.2899968","article_number":"112111"},{"language":[{"iso":"eng"}],"type":"journal_article","year":"2008","citation":{"ama":"Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279","apa":"Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279","chicago":"Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.","mla":"Hohage, P. 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