[{"title":"Efficient electro-optic switching in a photonic liquid crystal fiber","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2023-01-24T18:42:50Z","doi":"10.1063/1.3599848","language":[{"iso":"eng"}],"user_id":"254","author":[{"last_name":"Lorenz","full_name":"Lorenz, Alexander","first_name":"Alexander"},{"id":"254","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"}],"publisher":"AIP Publishing","keyword":["Physics and Astronomy (miscellaneous)"],"publication":"Applied Physics Letters","volume":98,"status":"public","date_created":"2023-01-24T18:42:25Z","_id":"39735","intvolume":" 98","article_number":"241106","issue":"24","type":"journal_article","year":"2011","citation":{"ieee":"A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no. 241106, 2011, doi: 10.1063/1.3599848.","short":"A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011).","bibtex":"@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848}, number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }","mla":"Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98, no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848.","apa":"Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters, 98(24), Article 241106. https://doi.org/10.1063/1.3599848","ama":"Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848","chicago":"Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters 98, no. 24 (2011). https://doi.org/10.1063/1.3599848."}},{"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:48Z","doi":"10.1063/1.3293445","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","year":"2010","type":"journal_article","citation":{"mla":"Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.","bibtex":"@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","apa":"Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445","ama":"Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445","chicago":"Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.","ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010.","short":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010)."},"_id":"7975","intvolume":" 96","issue":"3","article_number":"033111","publication":"Applied Physics Letters","author":[{"last_name":"Lei","full_name":"Lei, W.","first_name":"W."},{"last_name":"Notthoff","full_name":"Notthoff, C.","first_name":"C."},{"last_name":"Lorke","full_name":"Lorke, A.","first_name":"A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publisher":"AIP Publishing","date_created":"2019-02-21T13:32:39Z","status":"public","volume":96,"user_id":"42514"},{"language":[{"iso":"eng"}],"doi":"10.1063/1.3293445","date_updated":"2022-01-06T07:03:48Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy","citation":{"short":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010).","ieee":"W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010.","apa":"Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445","ama":"Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445","chicago":"Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.","bibtex":"@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445."},"year":"2010","type":"journal_article","article_number":"033111","issue":"3","_id":"7980","intvolume":" 96","volume":96,"status":"public","date_created":"2019-02-21T14:13:43Z","publisher":"AIP Publishing","author":[{"last_name":"Lei","first_name":"W.","full_name":"Lei, W."},{"full_name":"Notthoff, C.","first_name":"C.","last_name":"Notthoff"},{"last_name":"Lorke","full_name":"Lorke, A.","first_name":"A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication":"Applied Physics Letters","user_id":"42514"},{"date_created":"2019-02-21T14:33:40Z","status":"public","volume":97,"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"first_name":"M.","full_name":"Csontos, M.","last_name":"Csontos"},{"first_name":"Y.","full_name":"Komijani, Y.","last_name":"Komijani"},{"last_name":"Shorubalko","first_name":"I.","full_name":"Shorubalko, I."},{"full_name":"Ensslin, K.","first_name":"K.","last_name":"Ensslin"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"user_id":"42514","year":"2010","type":"journal_article","citation":{"short":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010).","ieee":"M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters, vol. 97, no. 2, 2010.","apa":"Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics Letters, 97(2). https://doi.org/10.1063/1.3463465","ama":"Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465","chicago":"Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465.","bibtex":"@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465."},"issue":"2","article_number":"022110","intvolume":" 97","_id":"7982","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Nanostructures in p-GaAs with improved tunability","language":[{"iso":"eng"}],"doi":"10.1063/1.3463465","date_updated":"2022-01-06T07:03:48Z"},{"department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Full-wave rectification based upon hot-electron thermopower","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:48Z","doi":"10.1063/1.3475922","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"last_name":"Wiemann","full_name":"Wiemann, M.","first_name":"M."},{"first_name":"U.","full_name":"Wieser, U.","last_name":"Wieser"},{"last_name":"Kunze","full_name":"Kunze, U.","first_name":"U."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"date_created":"2019-02-21T14:34:50Z","status":"public","volume":97,"user_id":"42514","citation":{"bibtex":"@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }","mla":"Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:10.1063/1.3475922.","apa":"Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters, 97(6). https://doi.org/10.1063/1.3475922","ama":"Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922","chicago":"Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters 97, no. 6 (2010). https://doi.org/10.1063/1.3475922.","ieee":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” Applied Physics Letters, vol. 97, no. 6, 2010.","short":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010)."},"year":"2010","type":"journal_article","_id":"7983","intvolume":" 97","issue":"6","article_number":"062112"},{"year":"2010","type":"journal_article","citation":{"short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812."},"_id":"7990","intvolume":" 97","article_number":"143101","issue":"14","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"first_name":"A.","full_name":"Zrenner, A.","last_name":"Zrenner"},{"last_name":"Meier","first_name":"C.","full_name":"Meier, C."}],"volume":97,"date_created":"2019-02-21T14:41:19Z","status":"public","user_id":"42514","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:48Z","doi":"10.1063/1.3488812","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode"},{"intvolume":" 97","_id":"4550","issue":"14","article_number":"143101","citation":{"ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812"},"year":"2010","type":"journal_article","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}],"article_type":"original","user_id":"20798","publication":"Applied Physics Letters","author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","last_name":"Zrenner","id":"606"},{"orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798","last_name":"Meier"}],"publisher":"AIP Publishing","date_created":"2018-09-20T12:38:51Z","status":"public","volume":97,"date_updated":"2022-01-06T07:01:09Z","doi":"10.1063/1.3488812","language":[{"iso":"eng"}],"title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]}},{"volume":96,"date_created":"2018-08-28T11:56:08Z","has_accepted_license":"1","status":"public","publication":"Applied Physics Letters","file_date_updated":"2018-08-28T11:58:27Z","publisher":"AIP Publishing","author":[{"last_name":"Tschumak","first_name":"E.","full_name":"Tschumak, E."},{"first_name":"R.","full_name":"Granzner, R.","last_name":"Granzner"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"first_name":"F.","full_name":"Schwierz, F.","last_name":"Schwierz"},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"full_name":"Nagasawa, H.","first_name":"H.","last_name":"Nagasawa"},{"last_name":"Abe","full_name":"Abe, M.","first_name":"M."},{"last_name":"As","full_name":"As, Donald","first_name":"Donald"}],"file":[{"creator":"hclaudia","file_id":"4195","file_size":277385,"success":1,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-08-28T11:58:27Z","date_created":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","access_level":"closed"}],"ddc":["530"],"user_id":"55706","abstract":[{"text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.","lang":"eng"}],"article_type":"original","citation":{"ieee":"E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066"},"year":"2010","type":"journal_article","article_number":"253501","issue":"25","_id":"4194","intvolume":" 96","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"286"}],"title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","language":[{"iso":"eng"}],"doi":"10.1063/1.3455066","date_updated":"2022-01-06T07:00:33Z"},{"external_id":{"isi":["000271666800034"]},"title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","isi":"1","department":[{"_id":"296"}],"publication_status":"published","publication_identifier":{"eissn":["1077-3118"],"issn":["0003-6951"]},"date_updated":"2022-01-06T06:53:49Z","oa":"1","doi":"10.1063/1.3254330","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"lang":"eng","text":"We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain."}],"user_id":"458","ddc":["530"],"file":[{"file_id":"18633","creator":"schindlm","relation":"main_file","description":"© 2009 American Institute of Physics","content_type":"application/pdf","date_updated":"2020-08-30T15:29:43Z","title":"Measurement of effective electron mass in biaxial tensile strained silicon on insulator","file_size":198836,"date_created":"2020-08-28T22:28:31Z","file_name":"1.3254330.pdf","access_level":"open_access"}],"quality_controlled":"1","author":[{"last_name":"Feste","first_name":"Sebastian F.","full_name":"Feste, Sebastian F."},{"last_name":"Schäpers","first_name":"Thomas","full_name":"Schäpers, Thomas"},{"first_name":"Dan","full_name":"Buca, Dan","last_name":"Buca"},{"last_name":"Zhao","first_name":"Qing Tai","full_name":"Zhao, Qing Tai"},{"last_name":"Knoch","full_name":"Knoch, Joachim","first_name":"Joachim"},{"last_name":"Bouhassoune","full_name":"Bouhassoune, Mohammed","first_name":"Mohammed"},{"last_name":"Schindlmayr","id":"458","first_name":"Arno","orcid":"0000-0002-4855-071X","full_name":"Schindlmayr, Arno"},{"last_name":"Mantl","first_name":"Siegfried","full_name":"Mantl, Siegfried"}],"publisher":"American Institute of Physics","file_date_updated":"2020-08-30T15:29:43Z","publication":"Applied Physics Letters","has_accepted_license":"1","status":"public","date_created":"2020-08-28T22:24:30Z","volume":95,"intvolume":" 95","_id":"18632","issue":"18","article_number":"182101","citation":{"short":"S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).","ieee":"S. F. Feste et al., “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” Applied Physics Letters, vol. 95, no. 18, 2009.","chicago":"Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.","apa":"Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters, 95(18). https://doi.org/10.1063/1.3254330","ama":"Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330","mla":"Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.","bibtex":"@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={10.1063/1.3254330}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }"},"year":"2009","type":"journal_article"},{"_id":"7973","intvolume":" 94","article_number":"022107","issue":"2","citation":{"ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, vol. 94, no. 2, 2009.","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009).","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:10.1063/1.3069281.","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009;94(2). doi:10.1063/1.3069281","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281."},"type":"journal_article","year":"2009","user_id":"42514","publisher":"AIP Publishing","author":[{"last_name":"Buchholz","full_name":"Buchholz, S. S.","first_name":"S. S."},{"full_name":"Fischer, S. F.","first_name":"S. F.","last_name":"Fischer"},{"last_name":"Kunze","full_name":"Kunze, U.","first_name":"U."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"publication":"Applied Physics Letters","volume":94,"status":"public","date_created":"2019-02-21T13:28:29Z","date_updated":"2022-01-06T07:03:48Z","doi":"10.1063/1.3069281","language":[{"iso":"eng"}],"title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]}},{"user_id":"42514","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Buchholz","full_name":"Buchholz, S. S.","first_name":"S. S."},{"last_name":"Fischer","first_name":"S. F.","full_name":"Fischer, S. F."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"date_created":"2019-03-26T08:34:37Z","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","_id":"8579","date_updated":"2022-01-06T07:03:57Z","doi":"10.1063/1.3069281","article_number":"022107","language":[{"iso":"eng"}],"year":"2009","citation":{"ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009. doi:10.1063/1.3069281","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, 2009."},"type":"journal_article"},{"language":[{"iso":"eng"}],"year":"2009","type":"journal_article","citation":{"ama":"Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 2009. doi:10.1063/1.3072366","apa":"Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366","chicago":"Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3072366.","bibtex":"@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={10.1063/1.3072366}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }","mla":"Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009, doi:10.1063/1.3072366.","short":"J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).","ieee":"J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” Applied Physics Letters, 2009."},"doi":"10.1063/1.3072366","article_number":"023107","_id":"8580","date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T08:42:07Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Blokland","full_name":"Blokland, J. H.","first_name":"J. H."},{"last_name":"Bozkurt","first_name":"M.","full_name":"Bozkurt, M."},{"last_name":"Ulloa","first_name":"J. M.","full_name":"Ulloa, J. M."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"first_name":"P. M.","full_name":"Koenraad, P. M.","last_name":"Koenraad"},{"last_name":"Christianen","first_name":"P. C. M.","full_name":"Christianen, P. C. M."},{"last_name":"Maan","first_name":"J. C.","full_name":"Maan, J. C."}],"user_id":"42514","title":"Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy"},{"year":"2009","type":"journal_article","citation":{"ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009.","short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","mla":"Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724.","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724","chicago":"Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724."},"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:57Z","_id":"8585","article_number":"022113","doi":"10.1063/1.3175724","author":[{"last_name":"Marquardt","full_name":"Marquardt, B.","first_name":"B."},{"first_name":"M.","full_name":"Geller, M.","last_name":"Geller"},{"full_name":"Lorke, A.","first_name":"A.","last_name":"Lorke"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","status":"public","date_created":"2019-03-26T08:55:40Z","title":"Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots","user_id":"42514"},{"type":"journal_article","year":"2008","citation":{"bibtex":"@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }","mla":"Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.","ama":"Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439","apa":"Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439","chicago":"Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439.","ieee":"W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008.","short":"W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008)."},"_id":"7640","intvolume":" 92","article_number":"193111","issue":"19","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"full_name":"Lei, W.","first_name":"W.","last_name":"Lei"},{"last_name":"Offer","first_name":"M.","full_name":"Offer, M."},{"last_name":"Lorke","full_name":"Lorke, A.","first_name":"A."},{"first_name":"C.","full_name":"Notthoff, C.","last_name":"Notthoff"},{"id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik"},{"first_name":"O.","full_name":"Wibbelhoff, O.","last_name":"Wibbelhoff"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"volume":92,"date_created":"2019-02-13T11:30:23Z","status":"public","extern":"1","user_id":"20798","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.2920439","department":[{"_id":"15"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy"},{"article_number":"112111","doi":"10.1063/1.2899968","_id":"8603","date_updated":"2022-01-06T07:03:57Z","language":[{"iso":"eng"}],"type":"journal_article","citation":{"mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968.","bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008)."},"year":"2008","user_id":"42514","title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","status":"public","date_created":"2019-03-26T09:26:36Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Lo","first_name":"F.-Y.","full_name":"Lo, F.-Y."},{"full_name":"Melnikov, A.","first_name":"A.","last_name":"Melnikov"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Cordier","first_name":"Y.","full_name":"Cordier, Y."},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters"},{"article_number":"241920","doi":"10.1063/1.2943279","date_updated":"2022-01-06T07:03:57Z","_id":"8607","language":[{"iso":"eng"}],"citation":{"apa":"Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279","ama":"Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279","chicago":"Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.","bibtex":"@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={10.1063/1.2943279}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }","mla":"Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279.","short":"P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008).","ieee":"P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” Applied Physics Letters, 2008."},"year":"2008","type":"journal_article","user_id":"42514","title":"Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature","status":"public","date_created":"2019-03-26T09:51:24Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","author":[{"first_name":"P. E.","full_name":"Hohage, P. E.","last_name":"Hohage"},{"first_name":"J.","full_name":"Nannen, J.","last_name":"Nannen"},{"full_name":"Halm, S.","first_name":"S.","last_name":"Halm"},{"last_name":"Bacher","full_name":"Bacher, G.","first_name":"G."},{"first_name":"M.","full_name":"Wahle, M.","last_name":"Wahle"},{"first_name":"S. F.","full_name":"Fischer, S. F.","last_name":"Fischer"},{"last_name":"Kunze","full_name":"Kunze, U.","first_name":"U."},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}]},{"title":"Electrical detection of photoinduced spins both at room temperature and in remanence","user_id":"42514","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_created":"2019-03-26T09:52:27Z","status":"public","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"last_name":"Hövel","full_name":"Hövel, S.","first_name":"S."},{"last_name":"Gerhardt","first_name":"N. C.","full_name":"Gerhardt, N. C."},{"last_name":"Hofmann","full_name":"Hofmann, M. R.","first_name":"M. R."},{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Schuster","full_name":"Schuster, E.","first_name":"E."},{"last_name":"Keune","first_name":"W.","full_name":"Keune, W."},{"first_name":"H.","full_name":"Wende, H.","last_name":"Wende"},{"last_name":"Petracic","full_name":"Petracic, O.","first_name":"O."},{"last_name":"Westerholt","first_name":"K.","full_name":"Westerholt, K."}],"doi":"10.1063/1.2948856","article_number":"242102","date_updated":"2022-01-06T07:03:57Z","_id":"8608","citation":{"ieee":"S. Hövel et al., “Electrical detection of photoinduced spins both at room temperature and in remanence,” Applied Physics Letters, 2008.","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008).","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={10.1063/1.2948856}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }","mla":"Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856.","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2948856","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856."},"year":"2008","type":"journal_article","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","status":"public","date_created":"2019-03-26T09:53:44Z","author":[{"last_name":"Hövel","full_name":"Hövel, S.","first_name":"S."},{"last_name":"Gerhardt","full_name":"Gerhardt, N. C.","first_name":"N. C."},{"last_name":"Hofmann","first_name":"M. R.","full_name":"Hofmann, M. R."},{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"first_name":"E.","full_name":"Schuster, E.","last_name":"Schuster"},{"last_name":"Wende","first_name":"H.","full_name":"Wende, H."},{"last_name":"Keune","full_name":"Keune, W.","first_name":"W."},{"first_name":"O.","full_name":"Petracic, O.","last_name":"Petracic"},{"last_name":"Westerholt","full_name":"Westerholt, K.","first_name":"K."}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","title":"Room temperature electrical spin injection in remanence","user_id":"42514","year":"2008","type":"journal_article","citation":{"mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469.","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469.","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2957469","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469","ieee":"S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, 2008.","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008)."},"language":[{"iso":"eng"}],"article_number":"021117","doi":"10.1063/1.2957469","_id":"8609","date_updated":"2022-01-06T07:03:57Z"},{"user_id":"254","publication":"Applied Physics Letters","keyword":["Physics and Astronomy (miscellaneous)"],"author":[{"last_name":"Hoischen","full_name":"Hoischen, A.","first_name":"A."},{"last_name":"Benning","first_name":"S. A.","full_name":"Benning, S. A."},{"id":"254","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"}],"publisher":"AIP Publishing","volume":93,"date_created":"2023-01-24T18:52:43Z","status":"public","_id":"39749","intvolume":" 93","article_number":"131903","issue":"13","type":"journal_article","year":"2008","citation":{"bibtex":"@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={10.1063/1.2990762}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }","mla":"Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:10.1063/1.2990762.","chicago":"Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762.","ama":"Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters. 2008;93(13). doi:10.1063/1.2990762","apa":"Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762","ieee":"A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” Applied Physics Letters, vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.","short":"A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008)."},"title":"Submicrometer periodic patterns fixed by photopolymerization of dissipative structures","department":[{"_id":"313"},{"_id":"638"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2023-01-24T18:53:04Z","doi":"10.1063/1.2990762","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"313"},{"_id":"638"}],"title":"Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal","language":[{"iso":"eng"}],"doi":"10.1063/1.3021364","date_updated":"2023-01-24T18:53:34Z","volume":93,"status":"public","date_created":"2023-01-24T18:53:20Z","author":[{"last_name":"Redler","full_name":"Redler, Andreas","first_name":"Andreas"},{"first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","id":"254"}],"publisher":"AIP Publishing","publication":"Applied Physics Letters","keyword":["Physics and Astronomy (miscellaneous)"],"user_id":"254","year":"2008","citation":{"mla":"Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364.","bibtex":"@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }","chicago":"Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364.","ama":"Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18). doi:10.1063/1.3021364","apa":"Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters, 93(18), Article 183304. https://doi.org/10.1063/1.3021364","ieee":"A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” Applied Physics Letters, vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.","short":"A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008)."},"type":"journal_article","article_number":"183304","issue":"18","intvolume":" 93","_id":"39751"}]