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Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>.","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>.","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }","ama":"Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>"}},{"publication_status":"published","date_updated":"2023-03-09T08:49:01Z","article_type":"original","year":"2007","title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","author":[{"last_name":"Waitz","first_name":"T.","full_name":"Waitz, T."},{"full_name":"Tiemann, Michael","first_name":"Michael","last_name":"Tiemann","orcid":"0000-0003-1711-2722","id":"23547"},{"full_name":"Klar, P. J.","last_name":"Klar","first_name":"P. J."},{"last_name":"Sann","first_name":"J.","full_name":"Sann, J."},{"full_name":"Stehr, J.","first_name":"J.","last_name":"Stehr"},{"first_name":"B. K.","last_name":"Meyer","full_name":"Meyer, B. K."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2713872","article_number":"123108","language":[{"iso":"eng"}],"extern":"1","abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"publication":"Applied Physics Letters","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T09:40:39Z","status":"public","user_id":"23547","_id":"25986","quality_controlled":"1","citation":{"bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }","ama":"Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>. Published online 2007. doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>","mla":"Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","chicago":"Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>.","short":"T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007).","ieee":"T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” <i>Applied Physics Letters</i>, Art. no. 123108, 2007, doi: <a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","apa":"Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., &#38; Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>, Article 123108. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>"}},{"citation":{"chicago":"Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i> 90, no. 1 (2007). <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>.","short":"M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).","ieee":"M. Scharnberg <i>et al.</i>, “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” <i>Applied Physics Letters</i>, vol. 90, no. 1, Art. no. 013501, 2007, doi: <a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>.","apa":"Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., &#38; Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>, <i>90</i>(1), Article 013501. <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>. 2007;90(1). doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>","mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i>, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>."},"volume":90,"user_id":"20179","_id":"39561","publisher":"AIP Publishing","status":"public","department":[{"_id":"59"}],"keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","date_created":"2023-01-24T12:15:22Z","publication":"Applied Physics Letters","issue":"1","doi":"10.1063/1.2426926","language":[{"iso":"eng"}],"article_number":"013501","intvolume":"        90","date_updated":"2023-03-21T10:15:06Z","publication_status":"published","author":[{"full_name":"Scharnberg, M.","last_name":"Scharnberg","first_name":"M."},{"full_name":"Zaporojtchenko, V.","last_name":"Zaporojtchenko","first_name":"V."},{"full_name":"Adelung, R.","last_name":"Adelung","first_name":"R."},{"full_name":"Faupel, F.","last_name":"Faupel","first_name":"F."},{"full_name":"Pannemann, C.","last_name":"Pannemann","first_name":"C."},{"full_name":"Diekmann, T.","last_name":"Diekmann","first_name":"T."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer","year":"2007"},{"status":"public","_id":"7651","publisher":"AIP Publishing","user_id":"20798","volume":88,"citation":{"bibtex":"@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }","short":"C. 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Visible resonant modes in GaN-based photonic crystal membrane cavities. <i>Applied Physics Letters</i>, <i>88</i>(3). <a href=\"https://doi.org/10.1063/1.2166680\">https://doi.org/10.1063/1.2166680</a>","mla":"Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” <i>Applied Physics Letters</i>, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>."},"title":"Visible resonant modes in GaN-based photonic crystal membrane cavities","year":"2006","author":[{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"},{"first_name":"Kevin","last_name":"Hennessy","full_name":"Hennessy, Kevin"},{"last_name":"Haberer","first_name":"Elaine D.","full_name":"Haberer, Elaine D."},{"last_name":"Sharma","first_name":"Rajat","full_name":"Sharma, Rajat"},{"full_name":"Choi, Yong-Seok","last_name":"Choi","first_name":"Yong-Seok"},{"last_name":"McGroddy","first_name":"Kelly","full_name":"McGroddy, Kelly"},{"full_name":"Keller, Stacia","last_name":"Keller","first_name":"Stacia"},{"full_name":"DenBaars, Steven P.","first_name":"Steven P.","last_name":"DenBaars"},{"full_name":"Nakamura, Shuji","last_name":"Nakamura","first_name":"Shuji"},{"first_name":"Evelyn L.","last_name":"Hu","full_name":"Hu, Evelyn L."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        88","article_number":"031111","language":[{"iso":"eng"}],"doi":"10.1063/1.2166680","publication":"Applied Physics Letters","issue":"3","extern":"1","date_created":"2019-02-13T11:41:17Z","type":"journal_article","department":[{"_id":"15"}]},{"date_created":"2019-03-27T07:54:36Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"ama":"Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>","bibtex":"@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }","mla":"Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 082110, 2006, doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>.","short":"M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).","chicago":"Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>.","apa":"Knop, M., Wieser, U., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>","ieee":"M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. 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C.","last_name":"Hübner","full_name":"Hübner, M. C."},{"first_name":"S.","last_name":"Stufler","full_name":"Stufler, S."},{"last_name":"Zrenner","first_name":"A.","full_name":"Zrenner, A."},{"last_name":"Malzer","first_name":"S.","full_name":"Malzer, S."},{"last_name":"Döhler","first_name":"G. H.","full_name":"Döhler, G. H."}],"user_id":"42514","doi":"10.1063/1.2188057","article_number":"121115","language":[{"iso":"eng"}],"_id":"8654","publication":"Applied Physics Letters","citation":{"ieee":"R. Schmidt <i>et al.</i>, “Fabrication of genuine single-quantum-dot light-emitting diodes,” <i>Applied Physics Letters</i>, 2006.","apa":"Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>","mla":"Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 121115, 2006, doi:<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>.","bibtex":"@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }","chicago":"Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>.","short":"R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006).","ama":"Schmidt R, Scholz U, Vitzethum M, et al. 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Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2345233\">https://doi.org/10.1063/1.2345233</a>."},"date_created":"2019-03-27T08:39:57Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"status":"public","year":"2006","title":"Control of quantum dot excitons by lateral electric fields","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Stavarache, V.","first_name":"V.","last_name":"Stavarache"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Schwab","first_name":"M.","full_name":"Schwab, M."},{"full_name":"Yakovlev, D. R.","first_name":"D. 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