[{"user_id":"20798","department":[{"_id":"15"}],"_id":"7640","extern":"1","language":[{"iso":"eng"}],"article_number":"193111","type":"journal_article","publication":"Applied Physics Letters","status":"public","date_created":"2019-02-13T11:30:23Z","author":[{"first_name":"W.","full_name":"Lei, W.","last_name":"Lei"},{"first_name":"M.","full_name":"Offer, M.","last_name":"Offer"},{"first_name":"A.","last_name":"Lorke","full_name":"Lorke, A."},{"full_name":"Notthoff, C.","last_name":"Notthoff","first_name":"C."},{"last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik"},{"full_name":"Wibbelhoff, O.","last_name":"Wibbelhoff","first_name":"O."},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"volume":92,"date_updated":"2022-01-06T07:03:43Z","publisher":"AIP Publishing","doi":"10.1063/1.2920439","title":"Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy","issue":"19","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"citation":{"chicago":"Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” <i>Applied Physics Letters</i> 92, no. 19 (2008). <a href=\"https://doi.org/10.1063/1.2920439\">https://doi.org/10.1063/1.2920439</a>.","ieee":"W. Lei <i>et al.</i>, “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” <i>Applied Physics Letters</i>, vol. 92, no. 19, 2008.","ama":"Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. <i>Applied Physics Letters</i>. 2008;92(19). doi:<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>","mla":"Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” <i>Applied Physics Letters</i>, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>.","short":"W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008).","bibtex":"@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={<a href=\"https://doi.org/10.1063/1.2920439\">10.1063/1.2920439</a>}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }","apa":"Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &#38; Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. <i>Applied Physics Letters</i>, <i>92</i>(19). <a href=\"https://doi.org/10.1063/1.2920439\">https://doi.org/10.1063/1.2920439</a>"},"intvolume":"        92","year":"2008"},{"title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","doi":"10.1063/1.2899968","date_updated":"2022-01-06T07:03:57Z","author":[{"full_name":"Lo, F.-Y.","last_name":"Lo","first_name":"F.-Y."},{"first_name":"A.","full_name":"Melnikov, A.","last_name":"Melnikov"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Cordier","full_name":"Cordier, Y.","first_name":"Y."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_created":"2019-03-26T09:26:36Z","year":"2008","citation":{"apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., &#38; Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>","bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }","mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 112111, 2008, doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008).","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>.","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” <i>Applied Physics Letters</i>, 2008."},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","article_number":"112111","language":[{"iso":"eng"}],"_id":"8603","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Applied Physics Letters","type":"journal_article"},{"year":"2008","citation":{"bibtex":"@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={<a href=\"https://doi.org/10.1063/1.2943279\">10.1063/1.2943279</a>}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }","mla":"Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” <i>Applied Physics Letters</i>, 241920, 2008, doi:<a href=\"https://doi.org/10.1063/1.2943279\">10.1063/1.2943279</a>.","short":"P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008).","apa":"Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2943279\">https://doi.org/10.1063/1.2943279</a>","ama":"Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2943279\">10.1063/1.2943279</a>","ieee":"P. E. Hohage <i>et al.</i>, “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” <i>Applied Physics Letters</i>, 2008.","chicago":"Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2943279\">https://doi.org/10.1063/1.2943279</a>."},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature","doi":"10.1063/1.2943279","date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T09:51:24Z","author":[{"last_name":"Hohage","full_name":"Hohage, P. E.","first_name":"P. E."},{"first_name":"J.","last_name":"Nannen","full_name":"Nannen, J."},{"last_name":"Halm","full_name":"Halm, S.","first_name":"S."},{"first_name":"G.","full_name":"Bacher, G.","last_name":"Bacher"},{"full_name":"Wahle, M.","last_name":"Wahle","first_name":"M."},{"full_name":"Fischer, S. F.","last_name":"Fischer","first_name":"S. F."},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"status":"public","publication":"Applied Physics Letters","type":"journal_article","article_number":"241920","language":[{"iso":"eng"}],"_id":"8607","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"status":"public","type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"article_number":"242102","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8608","citation":{"ieee":"S. Hövel <i>et al.</i>, “Electrical detection of photoinduced spins both at room temperature and in remanence,” <i>Applied Physics Letters</i>, 2008.","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2948856\">https://doi.org/10.1063/1.2948856</a>.","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2948856\">10.1063/1.2948856</a>","mla":"Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” <i>Applied Physics Letters</i>, 242102, 2008, doi:<a href=\"https://doi.org/10.1063/1.2948856\">10.1063/1.2948856</a>.","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={<a href=\"https://doi.org/10.1063/1.2948856\">10.1063/1.2948856</a>}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008).","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2948856\">https://doi.org/10.1063/1.2948856</a>"},"year":"2008","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2948856","title":"Electrical detection of photoinduced spins both at room temperature and in remanence","date_created":"2019-03-26T09:52:27Z","author":[{"last_name":"Hövel","full_name":"Hövel, S.","first_name":"S."},{"first_name":"N. C.","full_name":"Gerhardt, N. C.","last_name":"Gerhardt"},{"full_name":"Hofmann, M. R.","last_name":"Hofmann","first_name":"M. R."},{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Schuster","full_name":"Schuster, E.","first_name":"E."},{"full_name":"Keune, W.","last_name":"Keune","first_name":"W."},{"first_name":"H.","full_name":"Wende, H.","last_name":"Wende"},{"first_name":"O.","last_name":"Petracic","full_name":"Petracic, O."},{"first_name":"K.","full_name":"Westerholt, K.","last_name":"Westerholt"}],"date_updated":"2022-01-06T07:03:57Z"},{"type":"journal_article","publication":"Applied Physics Letters","status":"public","_id":"8609","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"article_number":"021117","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2008","citation":{"ieee":"S. Hövel <i>et al.</i>, “Room temperature electrical spin injection in remanence,” <i>Applied Physics Letters</i>, 2008.","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>.","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>","mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, 021117, 2008, doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008).","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>"},"date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T09:53:44Z","author":[{"last_name":"Hövel","full_name":"Hövel, S.","first_name":"S."},{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"full_name":"Hofmann, M. R.","last_name":"Hofmann","first_name":"M. R."},{"first_name":"F.-Y.","last_name":"Lo","full_name":"Lo, F.-Y."},{"full_name":"Ludwig, A.","last_name":"Ludwig","first_name":"A."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"first_name":"E.","last_name":"Schuster","full_name":"Schuster, E."},{"first_name":"H.","full_name":"Wende, H.","last_name":"Wende"},{"first_name":"W.","full_name":"Keune, W.","last_name":"Keune"},{"first_name":"O.","last_name":"Petracic","full_name":"Petracic, O."},{"full_name":"Westerholt, K.","last_name":"Westerholt","first_name":"K."}],"title":"Room temperature electrical spin injection in remanence","doi":"10.1063/1.2957469"},{"status":"public","type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"article_number":"131903","keyword":["Physics and Astronomy (miscellaneous)"],"user_id":"254","department":[{"_id":"313"},{"_id":"638"}],"_id":"39749","citation":{"chicago":"Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” <i>Applied Physics Letters</i> 93, no. 13 (2008). <a href=\"https://doi.org/10.1063/1.2990762\">https://doi.org/10.1063/1.2990762</a>.","ieee":"A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” <i>Applied Physics Letters</i>, vol. 93, no. 13, Art. no. 131903, 2008, doi: <a href=\"https://doi.org/10.1063/1.2990762\">10.1063/1.2990762</a>.","ama":"Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. <i>Applied Physics Letters</i>. 2008;93(13). doi:<a href=\"https://doi.org/10.1063/1.2990762\">10.1063/1.2990762</a>","apa":"Hoischen, A., Benning, S. A., &#38; Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. <i>Applied Physics Letters</i>, <i>93</i>(13), Article 131903. <a href=\"https://doi.org/10.1063/1.2990762\">https://doi.org/10.1063/1.2990762</a>","mla":"Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” <i>Applied Physics Letters</i>, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2990762\">10.1063/1.2990762</a>.","short":"A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008).","bibtex":"@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.2990762\">10.1063/1.2990762</a>}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }"},"intvolume":"        93","year":"2008","issue":"13","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2990762","title":"Submicrometer periodic patterns fixed by photopolymerization of dissipative structures","date_created":"2023-01-24T18:52:43Z","author":[{"full_name":"Hoischen, A.","last_name":"Hoischen","first_name":"A."},{"first_name":"S. A.","last_name":"Benning","full_name":"Benning, S. A."},{"first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","id":"254","last_name":"Kitzerow"}],"volume":93,"publisher":"AIP Publishing","date_updated":"2023-01-24T18:53:04Z"},{"issue":"18","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","intvolume":"        93","citation":{"apa":"Redler, A., &#38; Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. <i>Applied Physics Letters</i>, <i>93</i>(18), Article 183304. <a href=\"https://doi.org/10.1063/1.3021364\">https://doi.org/10.1063/1.3021364</a>","mla":"Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” <i>Applied Physics Letters</i>, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.3021364\">10.1063/1.3021364</a>.","short":"A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008).","bibtex":"@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.3021364\">10.1063/1.3021364</a>}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }","ieee":"A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” <i>Applied Physics Letters</i>, vol. 93, no. 18, Art. no. 183304, 2008, doi: <a href=\"https://doi.org/10.1063/1.3021364\">10.1063/1.3021364</a>.","chicago":"Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” <i>Applied Physics Letters</i> 93, no. 18 (2008). <a href=\"https://doi.org/10.1063/1.3021364\">https://doi.org/10.1063/1.3021364</a>.","ama":"Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. <i>Applied Physics Letters</i>. 2008;93(18). doi:<a href=\"https://doi.org/10.1063/1.3021364\">10.1063/1.3021364</a>"},"year":"2008","volume":93,"author":[{"first_name":"Andreas","last_name":"Redler","full_name":"Redler, Andreas"},{"first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","id":"254","last_name":"Kitzerow"}],"date_created":"2023-01-24T18:53:20Z","publisher":"AIP Publishing","date_updated":"2023-01-24T18:53:34Z","doi":"10.1063/1.3021364","title":"Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal","publication":"Applied Physics Letters","type":"journal_article","status":"public","department":[{"_id":"313"},{"_id":"638"}],"user_id":"254","_id":"39751","language":[{"iso":"eng"}],"keyword":["Physics and Astronomy (miscellaneous)"],"article_number":"183304"},{"year":"2008","citation":{"ama":"Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. <i>Applied Physics Letters</i>. Published online 2008. doi:<a href=\"https://doi.org/10.1063/1.2909540\">10.1063/1.2909540</a>","ieee":"X.-F. Han <i>et al.</i>, “Single-photon level ultrafast all-optical switching,” <i>Applied Physics Letters</i>, Art. no. 151109, 2008, doi: <a href=\"https://doi.org/10.1063/1.2909540\">10.1063/1.2909540</a>.","chicago":"Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2909540\">https://doi.org/10.1063/1.2909540</a>.","bibtex":"@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={<a href=\"https://doi.org/10.1063/1.2909540\">10.1063/1.2909540</a>}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }","mla":"Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” <i>Applied Physics Letters</i>, 151109, 2008, doi:<a href=\"https://doi.org/10.1063/1.2909540\">10.1063/1.2909540</a>.","short":"X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008).","apa":"Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., &#38; Zhao, J. (2008). Single-photon level ultrafast all-optical switching. <i>Applied Physics Letters</i>, Article 151109. <a href=\"https://doi.org/10.1063/1.2909540\">https://doi.org/10.1063/1.2909540</a>"},"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Single-photon level ultrafast all-optical switching","doi":"10.1063/1.2909540","date_updated":"2023-01-26T10:08:30Z","author":[{"first_name":"Xiao-Feng","last_name":"Han","full_name":"Han, Xiao-Feng"},{"first_name":"Yu-Xiang","full_name":"Weng, Yu-Xiang","last_name":"Weng"},{"last_name":"Wang","full_name":"Wang, Rui","first_name":"Rui"},{"first_name":"Xi-Hao","full_name":"Chen, Xi-Hao","last_name":"Chen"},{"full_name":"Luo, Kai Hong","id":"36389","orcid":"0000-0003-1008-4976","last_name":"Luo","first_name":"Kai Hong"},{"last_name":"Wu","full_name":"Wu, Ling-An","first_name":"Ling-An"},{"first_name":"Jimin","full_name":"Zhao, Jimin","last_name":"Zhao"}],"date_created":"2021-10-12T08:46:00Z","status":"public","type":"journal_article","publication":"Applied Physics Letters","article_number":"151109","language":[{"iso":"eng"}],"_id":"26076","user_id":"36389"},{"status":"public","abstract":[{"lang":"eng","text":"We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature."}],"type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"article_type":"original","user_id":"15911","_id":"59695","citation":{"apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., &#38; Westerholt, K. (2008). Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>, <i>93</i>(2). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. 2008;93(2). doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters 93 (2008).","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, vol. 93, no. 2, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i> 93, no. 2 (2008). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>.","ieee":"S. Hövel <i>et al.</i>, “Room temperature electrical spin injection in remanence,” <i>Applied Physics Letters</i>, vol. 93, no. 2, 2008, doi: <a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>."},"intvolume":"        93","year":"2008","issue":"2","publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2957469","title":"Room temperature electrical spin injection in remanence","author":[{"first_name":"S.","last_name":"Hövel","full_name":"Hövel, S."},{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"last_name":"Hofmann","full_name":"Hofmann, M. R.","first_name":"M. R."},{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"full_name":"Ludwig, A.","last_name":"Ludwig","first_name":"A."},{"first_name":"D.","full_name":"Reuter, D.","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Schuster, E.","last_name":"Schuster","first_name":"E."},{"first_name":"H.","full_name":"Wende, H.","last_name":"Wende"},{"full_name":"Keune, W.","last_name":"Keune","first_name":"W."},{"last_name":"Petracic","full_name":"Petracic, O.","first_name":"O."},{"last_name":"Westerholt","full_name":"Westerholt, K.","first_name":"K."}],"date_created":"2025-04-25T10:28:29Z","volume":93,"date_updated":"2026-02-25T09:38:49Z","publisher":"AIP Publishing"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"issue":"2","year":"2008","citation":{"ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. 2008;93(2). doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>","ieee":"S. Hövel <i>et al.</i>, “Room temperature electrical spin injection in remanence,” <i>Applied Physics Letters</i>, vol. 93, no. 2, 2008, doi: <a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i> 93, no. 2 (2008). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>.","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, vol. 93, no. 2, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters 93 (2008).","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., &#38; Westerholt, K. (2008). Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>, <i>93</i>(2). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>"},"intvolume":"        93","publisher":"AIP Publishing","date_updated":"2026-02-25T14:01:26Z","date_created":"2025-04-25T10:25:27Z","author":[{"first_name":"S.","full_name":"Hövel, S.","last_name":"Hövel"},{"first_name":"N. C.","last_name":"Gerhardt","full_name":"Gerhardt, N. C."},{"full_name":"Hofmann, M. R.","last_name":"Hofmann","first_name":"M. R."},{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"first_name":"A.","full_name":"Ludwig, A.","last_name":"Ludwig"},{"last_name":"Reuter","full_name":"Reuter, D.","first_name":"D."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"E.","full_name":"Schuster, E.","last_name":"Schuster"},{"first_name":"H.","last_name":"Wende","full_name":"Wende, H."},{"first_name":"W.","last_name":"Keune","full_name":"Keune, W."},{"first_name":"O.","full_name":"Petracic, O.","last_name":"Petracic"},{"first_name":"K.","full_name":"Westerholt, K.","last_name":"Westerholt"}],"volume":93,"title":"Room temperature electrical spin injection in remanence","doi":"10.1063/1.2957469","type":"journal_article","publication":"Applied Physics Letters","abstract":[{"text":"<jats:p>We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.</jats:p>","lang":"eng"}],"status":"public","_id":"59694","user_id":"15911","department":[{"_id":"977"}],"language":[{"iso":"eng"}]},{"year":"2007","intvolume":"        91","citation":{"short":"C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007).","bibtex":"@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={<a href=\"https://doi.org/10.1063/1.2799240\">10.1063/1.2799240</a>}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }","mla":"Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” <i>Applied Physics Letters</i>, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2799240\">10.1063/1.2799240</a>.","apa":"Rockstuhl, C., Lederer, F., Zentgraf, T., &#38; Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. <i>Applied Physics Letters</i>, <i>91</i>(15). <a href=\"https://doi.org/10.1063/1.2799240\">https://doi.org/10.1063/1.2799240</a>","ieee":"C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” <i>Applied Physics Letters</i>, vol. 91, no. 15, 2007.","chicago":"Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” <i>Applied Physics Letters</i> 91, no. 15 (2007). <a href=\"https://doi.org/10.1063/1.2799240\">https://doi.org/10.1063/1.2799240</a>.","ama":"Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. <i>Applied Physics Letters</i>. 2007;91(15). doi:<a href=\"https://doi.org/10.1063/1.2799240\">10.1063/1.2799240</a>"},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","issue":"15","title":"Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays","doi":"10.1063/1.2799240","publisher":"AIP Publishing","date_updated":"2022-01-06T06:53:16Z","volume":91,"author":[{"last_name":"Rockstuhl","full_name":"Rockstuhl, Carsten","first_name":"Carsten"},{"first_name":"Falk","last_name":"Lederer","full_name":"Lederer, Falk"},{"full_name":"Zentgraf, Thomas","id":"30525","last_name":"Zentgraf","orcid":"0000-0002-8662-1101","first_name":"Thomas"},{"first_name":"Harald","full_name":"Giessen, Harald","last_name":"Giessen"}],"date_created":"2018-03-23T13:07:38Z","status":"public","publication":"Applied Physics Letters","type":"journal_article","article_number":"151109","_id":"1761","department":[{"_id":"15"},{"_id":"230"}],"user_id":"30525"},{"doi":"10.1063/1.2719612","title":"Technique for tilting GaAs photonic crystal nanocavities out of plane","author":[{"id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik"},{"full_name":"Hennessy, Kevin","last_name":"Hennessy","first_name":"Kevin"}],"date_created":"2019-02-13T11:34:33Z","volume":90,"date_updated":"2022-01-06T07:03:43Z","publisher":"AIP Publishing","citation":{"mla":"Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” <i>Applied Physics Letters</i>, vol. 90, no. 14, 143113, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2719612\">10.1063/1.2719612</a>.","short":"C. Meier, K. Hennessy, Applied Physics Letters 90 (2007).","bibtex":"@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic crystal nanocavities out of plane}, volume={90}, DOI={<a href=\"https://doi.org/10.1063/1.2719612\">10.1063/1.2719612</a>}, number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }","apa":"Meier, C., &#38; Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. <i>Applied Physics Letters</i>, <i>90</i>(14). <a href=\"https://doi.org/10.1063/1.2719612\">https://doi.org/10.1063/1.2719612</a>","ama":"Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. <i>Applied Physics Letters</i>. 2007;90(14). doi:<a href=\"https://doi.org/10.1063/1.2719612\">10.1063/1.2719612</a>","ieee":"C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” <i>Applied Physics Letters</i>, vol. 90, no. 14, 2007.","chicago":"Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” <i>Applied Physics Letters</i> 90, no. 14 (2007). <a href=\"https://doi.org/10.1063/1.2719612\">https://doi.org/10.1063/1.2719612</a>."},"intvolume":"        90","year":"2007","issue":"14","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"extern":"1","language":[{"iso":"eng"}],"article_number":"143113","user_id":"20798","department":[{"_id":"15"}],"_id":"7644","status":"public","type":"journal_article","publication":"Applied Physics Letters"},{"article_number":"262505","language":[{"iso":"eng"}],"_id":"8630","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Applied Physics Letters","type":"journal_article","title":"Magnetic and structural properties of Gd-implanted zinc-blende GaN","doi":"10.1063/1.2753113","date_updated":"2022-01-06T07:03:57Z","author":[{"last_name":"Lo","full_name":"Lo, F.-Y.","first_name":"F.-Y."},{"last_name":"Melnikov","full_name":"Melnikov, A.","first_name":"A."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"V.","last_name":"Ney","full_name":"Ney, V."},{"last_name":"Kammermeier","full_name":"Kammermeier, T.","first_name":"T."},{"full_name":"Ney, A.","last_name":"Ney","first_name":"A."},{"full_name":"Schörmann, J.","last_name":"Schörmann","first_name":"J."},{"full_name":"Potthast, S.","last_name":"Potthast","first_name":"S."},{"last_name":"As","full_name":"As, D. J.","first_name":"D. J."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."}],"date_created":"2019-03-26T10:23:42Z","year":"2007","citation":{"apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2753113\">https://doi.org/10.1063/1.2753113</a>","short":"F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).","bibtex":"@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }","mla":"Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 262505, 2007, doi:<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>.","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2753113\">https://doi.org/10.1063/1.2753113</a>.","ieee":"F.-Y. Lo <i>et al.</i>, “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” <i>Applied Physics Letters</i>, 2007.","ama":"Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>"},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published"},{"language":[{"iso":"eng"}],"article_number":"123108","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8632","status":"public","type":"journal_article","publication":"Applied Physics Letters","doi":"10.1063/1.2786836","title":"Focused ion beam implantation induced site-selective growth of InAs quantum dots","author":[{"last_name":"Mehta","full_name":"Mehta, M.","first_name":"M."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A.","last_name":"Melnikov","full_name":"Melnikov, A."},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"A.","full_name":"Remhof, A.","last_name":"Remhof"}],"date_created":"2019-03-26T10:26:08Z","date_updated":"2022-01-06T07:03:57Z","citation":{"ama":"Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>","chicago":"Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>.","ieee":"M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” <i>Applied Physics Letters</i>, 2007.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., &#38; Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007).","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>."},"year":"2007","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]}},{"_id":"25986","user_id":"23547","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"article_type":"original","article_number":"123108","language":[{"iso":"eng"}],"extern":"1","type":"journal_article","publication":"Applied Physics Letters","abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"status":"public","date_updated":"2023-03-09T08:49:01Z","author":[{"first_name":"T.","last_name":"Waitz","full_name":"Waitz, T."},{"first_name":"Michael","orcid":"0000-0003-1711-2722","last_name":"Tiemann","id":"23547","full_name":"Tiemann, Michael"},{"first_name":"P. J.","last_name":"Klar","full_name":"Klar, P. J."},{"first_name":"J.","last_name":"Sann","full_name":"Sann, J."},{"last_name":"Stehr","full_name":"Stehr, J.","first_name":"J."},{"first_name":"B. K.","last_name":"Meyer","full_name":"Meyer, B. K."}],"date_created":"2021-10-09T09:40:39Z","title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","doi":"10.1063/1.2713872","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"quality_controlled":"1","year":"2007","citation":{"ama":"Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>. Published online 2007. doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>","ieee":"T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” <i>Applied Physics Letters</i>, Art. no. 123108, 2007, doi: <a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","chicago":"Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>.","bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }","short":"T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007).","mla":"Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","apa":"Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., &#38; Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>, Article 123108. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>"}},{"type":"journal_article","publication":"Applied Physics Letters","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39561","language":[{"iso":"eng"}],"article_number":"013501","keyword":["Physics and Astronomy (miscellaneous)"],"issue":"1","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"citation":{"ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>. 2007;90(1). doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>","chicago":"Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i> 90, no. 1 (2007). <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>.","ieee":"M. Scharnberg <i>et al.</i>, “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” <i>Applied Physics Letters</i>, vol. 90, no. 1, Art. no. 013501, 2007, doi: <a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>.","mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i>, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>.","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }","short":"M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).","apa":"Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., &#38; Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>, <i>90</i>(1), Article 013501. <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>"},"intvolume":"        90","year":"2007","author":[{"first_name":"M.","last_name":"Scharnberg","full_name":"Scharnberg, M."},{"full_name":"Zaporojtchenko, V.","last_name":"Zaporojtchenko","first_name":"V."},{"last_name":"Adelung","full_name":"Adelung, R.","first_name":"R."},{"first_name":"F.","last_name":"Faupel","full_name":"Faupel, F."},{"first_name":"C.","last_name":"Pannemann","full_name":"Pannemann, C."},{"last_name":"Diekmann","full_name":"Diekmann, T.","first_name":"T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"date_created":"2023-01-24T12:15:22Z","volume":90,"date_updated":"2023-03-21T10:15:06Z","publisher":"AIP Publishing","doi":"10.1063/1.2426926","title":"Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer"},{"status":"public","type":"journal_article","article_number":"031111","extern":"1","_id":"7651","department":[{"_id":"15"}],"user_id":"20798","intvolume":"        88","citation":{"chicago":"Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” <i>Applied Physics Letters</i> 88, no. 3 (2006). <a href=\"https://doi.org/10.1063/1.2166680\">https://doi.org/10.1063/1.2166680</a>.","ieee":"C. Meier <i>et al.</i>, “Visible resonant modes in GaN-based photonic crystal membrane cavities,” <i>Applied Physics Letters</i>, vol. 88, no. 3, 2006.","ama":"Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. <i>Applied Physics Letters</i>. 2006;88(3). doi:<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>","apa":"Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. <i>Applied Physics Letters</i>, <i>88</i>(3). <a href=\"https://doi.org/10.1063/1.2166680\">https://doi.org/10.1063/1.2166680</a>","bibtex":"@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }","mla":"Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” <i>Applied Physics Letters</i>, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>.","short":"C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006)."},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","doi":"10.1063/1.2166680","date_updated":"2022-01-06T07:03:43Z","volume":88,"author":[{"full_name":"Meier, Cedrik","id":"20798","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik"},{"first_name":"Kevin","last_name":"Hennessy","full_name":"Hennessy, Kevin"},{"full_name":"Haberer, Elaine D.","last_name":"Haberer","first_name":"Elaine D."},{"first_name":"Rajat","full_name":"Sharma, Rajat","last_name":"Sharma"},{"first_name":"Yong-Seok","full_name":"Choi, Yong-Seok","last_name":"Choi"},{"first_name":"Kelly","last_name":"McGroddy","full_name":"McGroddy, Kelly"},{"first_name":"Stacia","last_name":"Keller","full_name":"Keller, Stacia"},{"last_name":"DenBaars","full_name":"DenBaars, Steven P.","first_name":"Steven P."},{"full_name":"Nakamura, Shuji","last_name":"Nakamura","first_name":"Shuji"},{"last_name":"Hu","full_name":"Hu, Evelyn L.","first_name":"Evelyn L."}],"publication":"Applied Physics Letters","language":[{"iso":"eng"}],"year":"2006","issue":"3","title":"Visible resonant modes in GaN-based photonic crystal membrane cavities","publisher":"AIP Publishing","date_created":"2019-02-13T11:41:17Z"},{"year":"2006","citation":{"apa":"Knop, M., Wieser, U., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>","bibtex":"@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }","short":"M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).","mla":"Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 082110, 2006, doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>.","ieee":"M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” <i>Applied Physics Letters</i>, 2006.","chicago":"Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>.","ama":"Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>"},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Ballistic rectification in an asymmetric mesoscopic cross junction","doi":"10.1063/1.2179618","date_updated":"2022-01-06T07:03:58Z","date_created":"2019-03-27T07:54:36Z","author":[{"last_name":"Knop","full_name":"Knop, M.","first_name":"M."},{"first_name":"U.","last_name":"Wieser","full_name":"Wieser, U."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"status":"public","publication":"Applied Physics Letters","type":"journal_article","article_number":"082110","language":[{"iso":"eng"}],"_id":"8648","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"citation":{"mla":"Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 121115, 2006, doi:<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>.","bibtex":"@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }","short":"R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006).","apa":"Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>","chicago":"Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>.","ieee":"R. Schmidt <i>et al.</i>, “Fabrication of genuine single-quantum-dot light-emitting diodes,” <i>Applied Physics Letters</i>, 2006.","ama":"Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>"},"year":"2006","author":[{"full_name":"Schmidt, R.","last_name":"Schmidt","first_name":"R."},{"first_name":"U.","full_name":"Scholz, U.","last_name":"Scholz"},{"full_name":"Vitzethum, M.","last_name":"Vitzethum","first_name":"M."},{"last_name":"Fix","full_name":"Fix, R.","first_name":"R."},{"last_name":"Metzner","full_name":"Metzner, C.","first_name":"C."},{"last_name":"Kailuweit","full_name":"Kailuweit, P.","first_name":"P."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Wieck","full_name":"Wieck, A.","first_name":"A."},{"first_name":"M. C.","full_name":"Hübner, M. C.","last_name":"Hübner"},{"first_name":"S.","full_name":"Stufler, S.","last_name":"Stufler"},{"first_name":"A.","last_name":"Zrenner","full_name":"Zrenner, A."},{"full_name":"Malzer, S.","last_name":"Malzer","first_name":"S."},{"first_name":"G. H.","last_name":"Döhler","full_name":"Döhler, G. H."}],"date_created":"2019-03-27T08:21:39Z","date_updated":"2022-01-06T07:03:58Z","doi":"10.1063/1.2188057","title":"Fabrication of genuine single-quantum-dot light-emitting diodes","type":"journal_article","publication":"Applied Physics Letters","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8654","language":[{"iso":"eng"}],"article_number":"121115"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2006","citation":{"ieee":"V. Stavarache <i>et al.</i>, “Control of quantum dot excitons by lateral electric fields,” <i>Applied Physics Letters</i>, 2006.","chicago":"Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2345233\">https://doi.org/10.1063/1.2345233</a>.","ama":"Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>","mla":"Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric Fields.” <i>Applied Physics Letters</i>, 123105, 2006, doi:<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>.","bibtex":"@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control of quantum dot excitons by lateral electric fields}, DOI={<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>}, number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}, year={2006} }","short":"V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton, M. Bayer, Applied Physics Letters (2006).","apa":"Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton, R., &#38; Bayer, M. (2006). Control of quantum dot excitons by lateral electric fields. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2345233\">https://doi.org/10.1063/1.2345233</a>"},"date_updated":"2022-01-06T07:03:58Z","date_created":"2019-03-27T08:39:57Z","author":[{"first_name":"V.","full_name":"Stavarache, V.","last_name":"Stavarache"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Schwab","full_name":"Schwab, M.","first_name":"M."},{"first_name":"D. R.","last_name":"Yakovlev","full_name":"Yakovlev, D. R."},{"full_name":"Oulton, R.","last_name":"Oulton","first_name":"R."},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."}],"title":"Control of quantum dot excitons by lateral electric fields","doi":"10.1063/1.2345233","type":"journal_article","publication":"Applied Physics Letters","status":"public","_id":"8665","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"article_number":"123105","language":[{"iso":"eng"}]}]